Indium (In)
post-transition-metalSolid
표준 원자량
114.818 u전자 배치
[Kr] 5s2 4d10 5p1녹는점
156.6 °C끓는점
2071.85 °C밀도
7310 kg/m³산화 상태
−5, −2, −1, 0, +1, +2, +3전기 음성도(Pauling)
1.78제1 이온화 에너지
5.786356 eV발견 연도
1863원자 반지름
155 pm상세 정보
Indium is a soft, silvery post-transition metal in group 13. It is chemically related to gallium and thallium, but its stable chemistry is dominated by the +3 oxidation state, with +1 compounds also known. The element is rare in Earth's crust and is obtained chiefly as a by-product of zinc refining. Its technological importance is disproportionate to its abundance, especially because transparent conducting indium tin oxide is central to flat-panel displays, touch screens, and other optoelectronic devices.
Indium is available in ultra pure form. Indium is a very soft, silvery-white metal with a brilliant luster. The pure metal gives a high-pitched "cry" when bent. It wets glass, as does gallium.
The name derives from the term "indigo" for the indigo-blue line in the element's spark spectrum. It was discovered in 1863 by the German physicist Ferdinand Reich and the German metallurgist Hieronymus Theodor Richter, while examining zinc blende. They isolated indium in 1867.
Indium was discovered by the German chemists Ferdinand Reich and Hieronymus Theodor Richter in 1863. Reich and Richter had been looking for traces of the element thallium in samples of zinc ores. A brilliant indigo line in the sample's spectrum revealed the existence of indium. Indium is about as abundant as silver but is much easier to recover since it typically occurs along with zinc, iron, lead and copper ores.
From the brilliant indigo line in its spectrum. Discovered by Reich and Richter, who later isolated the metal. Until 1924, a gram or so constituted the world's supply of this element in isolated form. It is probably about as abundant as silver. About 4 million troy ounces of indium are now produced annually in the Free World. Canada is presently producing more than 1,000,000 troy ounces annually.
Pure indium is a very soft, lustrous, silvery-white metal at ordinary conditions. It can be cut with a knife, leaves a mark on paper, and emits a characteristic high-pitched “cry” when bent as its crystals deform. It melts at a relatively low temperature for a metal, about 157 °C.
The largest use of indium is in indium tin oxide, a transparent and electrically conducting oxide coating used on displays, touch panels, solar cells, and low-emissivity glass. Indium metal and indium-rich alloys are used in low-melting solders, fusible alloys, thermal interface materials, and seals that wet glass or ceramics. Indium is also used in compound semiconductors such as indium phosphide and indium gallium arsenide for high-speed electronics, lasers, photodetectors, and some photovoltaic cells.
Indium is used to coat the bearings of high speed motors since it allows for the even distribution of lubricating oil. Indium is used to dope germanium to make transistors. It is also used to make other electrical components such as rectifiers, thermistors and photoconductors. Indium can be used to make mirrors that are as reflective as silver mirrors but do not tarnish as quickly. Indium is also used to make low melting alloys. An alloy of 24% indium and 76% gallium is a liquid at room temperature.
It has found application in making low-melting allows; an allow of 24% indium - 76% gallium is liquid at room temperature. It is used in making bearing alloys, germanium transistors, rectifiers, thermistors, and photoconductors. It can be plated onto metal and evaporated onto glass, forming a mirror as good as that made with silver but with more resistance to atmospheric corrosion.
Isotopes in Medicine
111In (with a half-life of 2.8 days) is used in indium leukocyte imaging (Fig. IUPAC.49.1), in which white blood cells that are abundant at sites of infection are labeled with 111In to help locate the source of the infection [361] M. T. Syrjälä, V. Valtonen, K. Liewendahl, G. Myllylä. J. Nucl. Med.28, 155 (1987)., [362] M. D. Cerqueira, A. F. Jacobson. J. Nucl. Med.30, 703 (1989)., [363] C. Love, C. J. Palestro. J. Nucl. Med.Technol.32, 47 (2004)..
Isotopes Used as a Source of Radioactive Isotope(s)
113In is used to produce 113Sn (with a half-life of 115 days) via the reaction 113In (p, n) 113Sn, and 113In is used to produce the radioisotope 110In (with a half-life of 1.15 h) [364] F. E. Fakhari. Separation and Purification of 111In from Irradiated Cadmium Targets by Solid Phase Extraction (SPE) Method for Medical Applications, Deutsche National Bibliothek (2014), Feb. 26; http://archiv.ub.uni-marburg.de/diss/z2006/0132/view.html., [365] M. Mostafa, A. A. El Sadek, H. El Said, M. A. El Amir. J. Nucl. Radiochem. Sci.10, 1 (2009)..
Indium most often forms In³⁺ compounds, although In⁺ chemistry is significant and can be stabilized in some solids and salts. Indium(III) oxide, In₂O₃, is a wide-band-gap oxide and the main component of indium tin oxide. Indium(III) chloride, InCl₃, is a common Lewis-acidic reagent and precursor. Indium phosphide, InP, and indium arsenide, InAs, are important III-V semiconductors. Indium forms many alloys and intermetallic compounds, and its organometallic chemistry includes precursors used in vapor deposition.
See more information at the Indium compound page.
Bulk indium metal has low acute toxicity, but fine dusts, fumes, and soluble indium compounds require control in industrial settings. Inhalation exposure to indium tin oxide and some indium compounds has been associated with serious lung disease in workers. Many semiconductor compounds containing indium also contain toxic partners such as arsenic or phosphide-forming materials, so hazards are not due to indium alone. Natural indium has no significant radiological hazard.
There is evidence that indium has a low order of toxicity; however, care should be taken until further information is available.
Indium occurs mainly as a trace constituent in sulfide ores, especially zinc ores such as sphalerite, rather than as abundant indium minerals. During weathering and processing it tends to follow chalcophile pathways and can be retained in sulfide-rich residues or industrial wastes. Environmental concentrations are usually very low, and indium has no known biological role. Releases are most relevant near mining, smelting, refining, and electronic-material manufacturing sites.
Indium is not mined as a primary metal in most operations. It is recovered chiefly from residues and intermediate streams produced during zinc smelting and refining, with smaller contributions from other base-metal processing. Supply therefore depends strongly on ore composition, recovery technology, and the economics of host metals. Demand is led by transparent conducting oxides and specialized semiconductors, while solders and alloys account for smaller but useful markets. Recycling occurs from manufacturing scrap and some end-of-life products, but dispersed thin-film uses make complete recovery difficult. Substitution is possible in some applications, yet often involves trade-offs in conductivity, transparency, processing, or reliability.
Indium is most frequently associated with zinc materials, and it is from these that most commercial indium is now obtained; however, it is also found in iron, lead, and copper ores.
Indium is a relatively scarce element in the cosmos. Its stable isotopes are produced by neutron-capture processes in earlier generations of stars, with contributions from both slow and rapid neutron-capture nucleosynthesis. In planetary materials it is strongly chalcophile and is concentrated more readily in sulfide phases than in silicates, helping explain its association with zinc, lead, and tin ores on Earth.
- Natural indium is dominated by ¹¹⁵In, which is very weakly radioactive but has an extremely long half-life.
- Indium metal can form cold-welded seals because it remains soft and malleable at low temperatures.
- The element was named from the indigo-blue spectral line used in its discovery.
- Indium tin oxide is useful because it combines optical transparency with electrical conductivity.
- Indium wets glass better than many common metals, making it useful in special seals.
이미지
특성
물리적 특성
- 원자 반지름(경험값)
- 155 pm 모든 원소의 원자 반지름(경험값) 비교 →
- 공유 결합 반지름
- 142 pm 모든 원소의 공유 결합 반지름 비교 →
- 반데르발스 반지름
- 193 pm 모든 원소의 반데르발스 반지름 비교 →
- 금속 반지름
- 142 pm 모든 원소의 금속 반지름 비교 →
- 밀도
- 7310 kg/m³ 모든 원소의 밀도 비교 →
- 몰 부피
- 0.0157 L/mol
- STP에서의 상
- 고체 모든 원소의 STP에서의 상 비교 →
- 녹는점
- 156.6 °C 모든 원소의 녹는점 비교 →
- 끓는점
- 2071.85 °C 모든 원소의 끓는점 비교 →
- 열전도율
- 81.8 W/(m·K) 모든 원소의 열전도율 비교 →
- 비열
- 0.233 J/(g·K) 모든 원소의 비열 비교 →
- 몰 열용량
- 26.74 J/(mol·K) 모든 원소의 몰 열용량 비교 →
- 결정 구조
- 정방 모든 원소의 결정 구조 비교 →
화학적 특성
- 전기 음성도(Pauling)
- 1.78 모든 원소의 전기 음성도(Pauling) 비교 →
- 전기 음성도(Allen)
- 1.656
- 전자 친화도
- 0.3 eV
- 제1 이온화 에너지
- 5.786356 eV 모든 원소의 제1 이온화 에너지 비교 →
- 제2 이온화 에너지
- 18.870475 eV 모든 원소의 제2 이온화 에너지 비교 →
- 제3 이온화 에너지
- 28.044247 eV 모든 원소의 제3 이온화 에너지 비교 →
- 제4 이온화 에너지
- 55.450191 eV 모든 원소의 제4 이온화 에너지 비교 →
- 제5 이온화 에너지
- 69.300239 eV 모든 원소의 제5 이온화 에너지 비교 →
- 산화 상태
- −5, −2, −1, 0, +1, +2, +3 모든 원소의 산화 상태 비교 →
- 원자가 전자
- 3 모든 원소의 원자가 전자 비교 →
- 전자 배치
- [Kr] 5s2 4d10 5p1
열역학적 특성
- 삼중점(온도)
- 156.5936 °C
- 융해열
- 0.03378764 eV 모든 원소의 융해열 비교 →
- 기화열
- 2.402446 eV 모든 원소의 기화열 비교 →
- 승화열
- 2.518526 eV
- 원자화열
- 2.518526 eV
- 원자화 엔탈피
- 2.518526 eV
핵 특성
- 양성자 수
- 49 모든 원소의 양성자 수 비교 →
- 중성자 수
- 64 모든 원소의 중성자 수 비교 →
- 알려진 동위원소 수
- 42 모든 원소의 알려진 동위원소 수 비교 →
- 안정 동위원소 수
- 1 모든 원소의 안정 동위원소 수 비교 →
- 가장 안정한 동위원소
- In-113
- 발견 연도
- 1863
존재비
- 존재비(지각)
- 0.25 mg/kg 모든 원소의 존재비(지각) 비교 →
- 존재비(해양)
- 0.02 mg/L 모든 원소의 존재비(해양) 비교 →
결정 구조
- 격자 상수 a
- 459 pm
전자 구조
- 전자껍질별 전자 수
- 2, 8, 18, 18, 3 모든 원소의 전자껍질별 전자 수 비교 →
식별자
- CAS 등록 번호
- 7440-74-6 모든 원소의 CAS 등록 번호 비교 →
- 항 기호
- 2P°1/2
- InChI
- InChI=1S/In
- InChI 키
- APFVFJFRJDLVQX-UHFFFAOYSA-N
전자 배치 측정값
In: 4d¹⁰ 5s² 5p¹[Kr] 4d¹⁰ 5s² 5p¹1s² 2s² 2p⁶ 3s² 3p⁶ 3d¹⁰ 4s² 4p⁶ 4d¹⁰ 5s² 5p¹원자 모형
동위원소에 따라 중성자 수, 질량, 안정성은 달라지지만, 중성 원자의 전자 배치는 달라지지 않습니다.
개략적인 원자 모형이며 실제 비율과 다릅니다.
원자 지문
방출 / 흡수 스펙트럼
동위원소 분포
| 질량수 | 원자 질량(u) | 천연 존재비 | 반감기 |
|---|---|---|---|
| 113 안정 | 112.90406184 ± 0.00000091 | 4.2900% | 안정 |
상 / 상태
이유: 녹는점(156.6 °C)보다 131.6 °C 낮음
개략도이며 실제 비율과 다름
상전이점
전이 에너지
녹는점에서 1 mol을 녹이는 데 필요한 에너지
끓는점에서 1 mol을 기화시키는 데 필요한 에너지
승화점에서 1 mol을 승화시키는 데 필요한 에너지
밀도
표준 조건에서
표준 조건에서
심화
원자 스펙트럼
전체 49개 중 10개를 표시합니다. 이온 전하순으로 정렬되었습니다(오름차순).
보유 스펙트럼선 데이터 ?
| 이온 | 전하 | 총 스펙트럼선 수 | 전이 확률 | 준위 표기 |
|---|---|---|---|---|
| In I | 0 | 92 | 27 | 91 |
| In II | +1 | 899 | 528 | 899 |
| In III | +2 | 55 | 0 | 0 |
| In IV | +3 | 42 | 0 | 0 |
| In V | +4 | 38 | 0 | 0 |
보유 에너지 준위 데이터 ?
| 이온 | 전하 | 준위 |
|---|---|---|
| In I | 0 | 114 |
| In II | +1 | 195 |
| In III | +2 | 28 |
| In IV | +3 | 18 |
| In V | +4 | 42 |
| In VI | +5 | 2 |
| In VII | +6 | 2 |
| In VIII | +7 | 2 |
| In IX | +8 | 2 |
| In X | +9 | 2 |
결정 구조 데이터 없음
결정 구조: tetragonal
이온 반지름
| 전하 | 배위 | 스핀 | 반지름 |
|---|---|---|---|
| +3 | 4 | 해당 없음 | 62 pm |
| +3 | 6 | 해당 없음 | 80 pm |
| +3 | 8 | 해당 없음 | 92 pm |
화합물
동위원소 (1)
| 질량수 | 원자 질량(u) | 천연 존재비 | 반감기 | 붕괴 방식 | |
|---|---|---|---|---|---|
| 113 안정 | 112.90406184 ± 0.00000091 | 4.2900% ± 0.0500% | 안정 | stable |
스펙트럼선
전체 277개 중 50개를 표시합니다. 기본적으로 세기가 측정된 스펙트럼선만 표시됩니다.
| 파장(nm) | 세기 | 이온화 단계 | 유형 | 전이 | 정확도 | 출처 | |
|---|---|---|---|---|---|---|---|
| 383.46308 nm | 32000 | In II | emission | 5s.5d 1D → 5s.4f 1F* | 측정값 | NIST | |
| 451.12972 nm | 18000 | In I | emission | 5s2.5p 2P* → 5s2.6s 2S | 측정값 | NIST | |
| 410.17504 nm | 17000 | In I | emission | 5s2.5p 2P* → 5s2.6s 2S | 측정값 | NIST | |
| 468.1115 nm | 16000 | In II | emission | 5s.5d 3D → 5s.4f 3F* | 측정값 | NIST | |
| 590.33916 nm | 9000 | In II | emission | 5s.6p 3P* → 5s.6d 3D | 측정값 | NIST | |
| 463.8162 nm | 8800 | In II | emission | 5s.5d 3D → 5s.4f 3F* | 측정값 | NIST | |
| 465.562 nm | 7800 | In II | emission | 5s.5d 3D → 5s.4f 3F* | 측정값 | NIST | |
| 464.4572 nm | 5900 | In II | emission | 5s.5d 3D → 5s.4f 1F* | 측정값 | NIST | |
| 718.29048 nm | 5800 | In II | emission | 5s.6s 3S → 5s.6p 3P* | 측정값 | NIST | |
| 384.2918 nm | 5600 | In II | emission | 5s.5d 1D → 5s.4f 3F* | 측정값 | NIST | |
| 591.87693 nm | 5100 | In II | emission | 5s.6p 1P* → 5s.6d 1D | 측정값 | NIST | |
| 616.254 nm | 4100 | In II | emission | 5s.4f 1F* → 5s<1/2,F=4>.6g | 측정값 | NIST | |
| 689.15826 nm | 3900 | In II | emission | 5s.6s 3S → 5s.6p 3P* | 측정값 | NIST | |
| 585.31709 nm | 3400 | In II | emission | 5s.6p 3P* → 5s.6d 3D | 측정값 | NIST | |
| 609.59333 nm | 3300 | In II | emission | 5s.6p 3P* → 5s.6d 3D | 측정값 | NIST | |
| 468.4791 nm | 2500 | In II | emission | 5s.5d 3D → 5s.4f 3F* | 측정값 | NIST | |
| 727.66388 nm | 2400 | In II | emission | 5s.6s 3S → 5s.6p 3P* | 측정값 | NIST | |
| 614.953 nm | 2200 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.6g | 측정값 | NIST | |
| 613.986 nm | 2100 | In II | emission | 5s.4f 3F* → 5s<1/2,F=5>.6g | 측정값 | NIST | |
| 614.32 nm | 2100 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.6g | 측정값 | NIST | |
| 614.813 nm | 2100 | In II | emission | 5s.4f 3F* → 5s<1/2,F=5>.6g | 측정값 | NIST | |
| 616.113 nm | 2000 | In II | emission | 5s.4f 1F* → 5s<1/2,F=5>.6g | 측정값 | NIST | |
| 465.6736 nm | 1700 | In II | emission | 5s.5d 3D → 5s.4f 3F* | 측정값 | NIST | |
| 551.3006 nm | 1500 | In II | emission | 5p2 3P → 5s.4f 1F* | 측정값 | NIST | |
| 614.126 nm | 1500 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.6g | 측정값 | NIST | |
| 405.69377 nm | 1300 | In II | emission | 5s.6p 3P* → 5s.8s 3S | 측정값 | NIST | |
| 591.52626 nm | 1300 | In II | emission | 5s.6p 3P* → 5s.6d 3D | 측정값 | NIST | |
| 557.6866 nm | 1200 | In II | emission | 5s.7p 1P* → 5s.10d 1D | 측정값 | NIST | |
| 551.935 nm | 1100 | In II | emission | 5s.6d 3D → 5s.7f 3F* | 측정값 | NIST | |
| 549.7486 nm | 1000 | In II | emission | 5s.6d 3D → 5s.7f 3F* | 측정값 | NIST | |
| 550.7048 nm | 1000 | In II | emission | 5s.6d 3D → 5s.7f 3F* | 측정값 | NIST | |
| 551.0883 nm | 1000 | In II | emission | 5s.7p 3P* → 5s.10d 3D | 측정값 | NIST | |
| 512.0847 nm | 960 | In II | emission | 5s.4f 3F* → 5s<1/2,F=5>.7g | 측정값 | NIST | |
| 390.20794 nm | 910 | In II | emission | 5s.6p 1P* → 5s.7d 1D | 측정값 | NIST | |
| 384.2158 nm | 900 | In II | emission | 5s.5d 1D → 5s.4f 3F* | 측정값 | NIST | |
| 512.1781 nm | 880 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.7g | 측정값 | NIST | |
| 611.58707 nm | 830 | In II | emission | 5s.6p 3P* → 5s.6d 3D | 측정값 | NIST | |
| 511.7388 nm | 810 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.7g | 측정값 | NIST | |
| 511.5109 nm | 800 | In II | emission | 5s.4f 3F* → 5s<1/2,F=5>.7g | 측정값 | NIST | |
| 512.9865 nm | 710 | In II | emission | 5s.4f 1F* → 5s<1/2,F=5>.7g | 측정값 | NIST | |
| 463.7055 nm | 610 | In II | emission | 5s.5d 3D → 5s.4f 3F* | 측정값 | NIST | |
| 511.6041 nm | 590 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.7g | 측정값 | NIST | |
| 550.7779 nm | 570 | In II | emission | 5s.6d 3D → 5s.7f 3F* | 측정값 | NIST | |
| 414.9635 nm | 550 | In II | emission | 5s.4f 1F* → 5s<1/2,F=5>.10g | 측정값 | NIST | |
| 530.94926 nm | 550 | In II | emission | 5s.6p 3P* → 5s.6d 1D | 측정값 | NIST | |
| 454.8998 nm | 540 | In II | emission | 5p2 1D → 5s.8p 3P* | 측정값 | NIST | |
| 461.6069 nm | 540 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.8g | 측정값 | NIST | |
| 457.0881 nm | 520 | In II | emission | 5s.6d 3D → 5s.9f 3F* | 측정값 | NIST | |
| 458.701 nm | 520 | In II | emission | 5s.6d 3D → 5s.9f 3F* | 측정값 | NIST | |
| 457.1286 nm | 510 | In II | emission | 5s.6d 3D → 5s.9f 3F* | 측정값 | NIST |
확장 특성
공유 결합 반지름(확장)
- 공유 결합 반지름(Pyykkö)
- 142 pm
- 공유 결합 반지름(Pyykkö, 이중 결합)
- 136 pm
- 공유 결합 반지름(Pyykkö, 삼중 결합)
- 146 pm
반데르발스 반지름
- Bondi
- 193 pm
- Batsanov
- 220 pm
- Alvarez
- 243 pm
- UFF
- 446.3 pm
- MM3
- 264 pm
- Dreiding
- 459 pm
원자 및 금속 반지름
- 원자 반지름(Rahm)
- 246 pm
- 금속 반지름(C12)
- 158 pm
번호 척도
- Mendeleev
- 84
- Pettifor
- 79
- Glawe
- 80
전기 음성도 척도
- Ghosh
- 0
- Miedema
- 4
- Gunnarsson–Lundqvist
- 3
- Robles–Bartolotti
- 2
분극률 및 분산
- 쌍극자 분극률
- 65 a.u.
- 쌍극자 분극률(불확도)
- 4 a.u.
- C₆
- 779 Ha·Bohr6
- C₆ (Gould–Bučko)
- 643 Ha·Bohr6
미데마 매개변수
- 미데마 몰 부피
- 15.75 cm3/mol
- 미데마 전자 밀도
- 2
공급 위험 및 경제성
- 생산 집중도
- 53
- 상대적 공급 위험
- 8
- 정치적 안정성(최대 생산국)
- 24
상전이 및 동소체
| 녹는점 | 429.75 K |
| 끓는점 | 2300.15 K |
| 삼중점(온도) | 429.74 K |
산화 상태 분류
심화 참고 데이터
차폐 상수 (11)
| n | 오비탈 | σ |
|---|---|---|
| 1 | s | 0.9903 |
| 2 | p | 4.102 |
| 2 | s | 12.8764 |
| 3 | d | 14.3218 |
| 3 | p | 17.4793 |
| 3 | s | 17.3692 |
| 4 | d | 32.0584 |
| 4 | p | 28.6312 |
| 4 | s | 27.2388 |
| 5 | p | 40.53 |
결정 반지름 상세 정보 (3)
| 전하 | CN | 스핀 | rcrystal (pm) | 기원 |
|---|---|---|---|---|
| 3 | IV | 76 | ||
| 3 | VI | 94 | from r^3 vs V plots, | |
| 3 | VIII | 106 | from r^3 vs V plots, calculated, |
동위원소 붕괴 방식 (69)
| 동위원소 | 모드 | 세기 |
|---|---|---|
| 96 | B+ | — |
| 96 | p | — |
| 97 | B+ | 100% |
| 97 | B+p | 2.3% |
| 97 | p | — |
| 98 | B+ | 100% |
| 98 | B+p | 0.1% |
| 99 | B+ | 100% |
| 99 | B+p | 0.3% |
| 100 | B+ | 100% |
X선 산란 인자 (510)
| 에너지 (eV) | f₁ | f₂ |
|---|---|---|
| 10 | — | 2.16244 |
| 10.1617 | — | 2.07002 |
| 10.3261 | — | 1.98155 |
| 10.4931 | — | 1.89686 |
| 10.6628 | — | 1.81579 |
| 10.8353 | — | 1.72844 |
| 11.0106 | — | 1.54985 |
| 11.1886 | — | 1.35731 |
| 11.3696 | — | 0.99325 |
| 11.5535 | — | 0.74202 |
추가 데이터
Estimated Crustal Abundance
The estimated element abundance in the earth's crust.
2.5×10-1 milligrams per kilogram
참고 문헌 (1)
Estimated Oceanic Abundance
The estimated element abundance in the earth's oceans.
2×10-2 milligrams per liter
참고 문헌 (1)
Sources
Sources of this element.
Indium is most frequently associated with zinc materials, and it is from these that most commercial indium is now obtained; however, it is also found in iron, lead, and copper ores.
참고 문헌 (1)
- [6] Indium https://periodic.lanl.gov/49.shtml
참고 문헌
(9)
Data deposited in or computed by PubChem
The half-life and atomic mass data was provided by the Atomic Mass Data Center at the International Atomic Energy Agency.
Element data are cited from the Atomic weights of the elements (an IUPAC Technical Report). The IUPAC periodic table of elements can be found at https://iupac.org/what-we-do/periodic-table-of-elements/. Additional information can be found within IUPAC publication doi:10.1515/pac-2015-0703 Copyright © 2020 International Union of Pure and Applied Chemistry.
The information are cited from Pure Appl. Chem. 2018; 90(12): 1833-2092, https://doi.org/10.1515/pac-2015-0703.
Thomas Jefferson National Accelerator Facility (Jefferson Lab) is one of 17 national laboratories funded by the U.S. Department of Energy. The lab's primary mission is to conduct basic research of the atom's nucleus using the lab's unique particle accelerator, known as the Continuous Electron Beam Accelerator Facility (CEBAF). For more information visit https://www.jlab.org/
The periodic table at the LANL (Los Alamos National Laboratory) contains basic element information together with the history, source, properties, use, handling and more. The provenance data may be found from the link under the source name.
The periodic table contains NIST's critically-evaluated data on atomic properties of the elements. The provenance data that include data for atomic spectroscopy, X-ray and gamma ray, radiation dosimetry, nuclear physics, and condensed matter physics may be found from the link under the source name. Ref: https://www.nist.gov/pml/atomic-spectra-database
This section provides all form of data related to element Indium.
The element property data was retrieved from publications.