Gallium (Ga)
post-transition-metalSolid
표준 원자량
69.723 u전자 배치
[Ar] 4s2 3d10 4p1녹는점
29.76 °C끓는점
2203.85 °C밀도
5910 kg/m³산화 상태
−5, −4, −3, −2, −1, 0, +1, +2, +3전기 음성도(Pauling)
1.81제1 이온화 에너지
5.999302 eV발견 연도
1875원자 반지름
130 pm상세 정보
Gallium is a soft post-transition metal in group 13, chemically related to aluminium and indium. It is notable for melting just above room temperature, forming low-melting alloys, and supplying semiconductors through compounds such as gallium arsenide and gallium nitride. In nature it is dispersed rather than concentrated in its own ores, so it is recovered mainly as a by-product of aluminium and zinc processing.
It is one of four metals mercury, cesium, and rubidium which can be liquid near room temperature and, thus, can be used in high-temperature thermometers. It has one of the longest liquid ranges of any metal and has a low vapor pressure even at high temperatures.
There is a strong tendency for gallium to supercool below its freezing point. Therefore, seeding may be necessary to initiate solidification.
Ultra-pure gallium has a beautiful, silvery appearance, and the solid metal exhibits a conchoidal fracture similar to glass. The metal expands 3.1 percent on solidifying; therefore, it should not be stored in glass or metal containers, because they may break as the metal solidifies.
High-purity gallium is attacked only slowly by mineral acids.
The name derives from the Latin gallia for France. It was discovered in zinc blende by the French chemist Paul-Emile Lecoq de Boisbaudran in 1875. It was first isolated in 1878 by Lecoq de Boisbaudran and the French chemist Émile-Clément Jungflesch.
First proposed to exist by Dmitri Mendeleyev in 1871 based on gaps in his newly created Periodic Table of Elements, gallium was discovered spectroscopically by the French chemist Paul-Émile Lecoq de Boisbaudran in 1875. Later that same year, Lecoq was able to obtain pure gallium through the electrolysis of a solution of gallium hydroxide (Ga(OH)3) in potassium hydroxide (KOH). Trace amounts of gallium are found in diaspore, sphalerite, germanite and bauxite as well as in the byproducts of burning coal.
From the Latin word Gallia, France; also from Latin, gallus, a translation of "Lecoq," a cock. Predicted and described by Mendeleev as ekaaluminum, and discovered spectroscopically by Lecoq de Boisbaudran in 1875, who in the same year obtained the free metal by electrolysis of a solution of the hydroxide in KOH.
Pure gallium is a silvery, lustrous metal that is solid at ordinary room temperature but melts at about 30 °C. The solid is brittle enough to fracture, while the liquid readily wets many surfaces and can penetrate some metals, especially aluminium.
Gallium is used chiefly in compound semiconductors. Gallium arsenide (GaAs) is important in high-frequency electronics, optoelectronics, infrared light-emitting diodes, and some photovoltaic cells. Gallium nitride (GaN) is central to blue and ultraviolet light-emitting diodes, laser diodes, and efficient power electronics. Low-melting gallium alloys are used in thermometers, thermal interfaces, and specialized heat-transfer applications where mercury is undesirable. Radioisotopes such as ⁶⁷Ga and ⁶⁸Ga are used in diagnostic nuclear medicine.
Gallium melts near room temperature and has one of the largest liquid ranges of any metal, so it has found use in high temperature thermometers. Gallium easily forms alloys with most metals and has been used to create low melting alloys. Gallium is used as a doping material for semiconductors and has been used to produce solid-state items like transistors and light emitting diodes. Gallium arsenide (GaAs) can produce laser light directly from electricity. Large amounts of gallium trichloride (GaCl3) have been gathered to build the Gallium Neutrino Observatory, an observatory located in Italy built to study particles called neutrinos which are produced inside the sun during the process of nuclear fusion.
Gallium wets glass or porcelain and forms a brilliant mirror when it is painted on glass. It is widely used in doping semiconductors and producing solid-state devices such as transistors.
Magnesium gallate containing divalent impurities, such as Mn+2, is finding use in commercial ultraviolet-activated powder phosphors. Gallium arsenide is capable of converting electricity directly into coherent light. Gallium readily alloys with most metals, and has been used as a component in low-melting alloys.
Isotopes in Medicine
68Ga (with a half-life of 68 min) is a radioactive isotope that emits positrons, which are used to produce high-resolution imaging with positron emission tomography (PET). Unlike 18F, which is most commonly used, 68Ga is more easily produced using a cost-effective generator with the parent radionuclide 68Ge (with a half-life of 271 days) (Fig. IUPAC.31.1). Once produced, 68Ga easily couples to biomolecules (most commonly peptides) that target G-protein coupled receptors, which are over-expressed on human tumor cells. The labeled protein acts as a radioactive tracer for cancer diagnostics. PET images are often coupled with CT images to get a more complete picture of the body [256] I. Kayani, B. G. Conry, A. M. Groves, T. Win, J. Dickson, M. Caplin, J. B. Bomanji. J. Nucl. Med.50, 1927 (2009)., [257] M. Fani, J. P. André, H. R. Maecke. Contrast Media Mol. Imaging3, 67 (2008)., [258] G. J. Ehrhardt, M. J. Welch. J. Nucl. Med.19, 925 (1978)., [259] G. Ehrhardt, S. Wagner, M. J. Welch. J. Labelled Compd. Radiopharm.16, 111 (1979)., [260] M. V. Cantorias, S. D. Figueroa, T. P. Quinn, J. R. Lever, T. J. Hoffman, L. D. Watkinson, T. L. Carmack, C. S. Cutler. Nucl. Med. Biol.36, 505 (2009)., [261] J. C. Rold, T. L. Sieckman, G. L. Figueroa, S. D. Sublett, S. V. Engelbrecht, H. Cutler, C. S. Jurisson, S. S. Hoffman, T. J. Bottenus, B. N. Garrison. Trans. Am. Nucl. Soc.98, 802 (2008)., [262] J. Fitzsimmons, M. Fassbender, R. Atcher. J. Nucl. Med.48, 319 (2007).. Radiopharmaceutical 67Ga (with a half-life of 78 h) is a gamma-emitting isotope used in scintigraphy for medical imaging [263] S. M. Larson, P. B. Hoffer. “Normal patterns of localization”, in Gallium-67 Imaging, P. B. Hoffer, C. Bekerman, and R. E. Henkin (Eds.), John Wiley, New York (1978)., [264] A. Wirth, J. F. Seymour, R. J. Hicks, R. Ware, R. Fisher, M. Prince, M. P. MacManus, G. Ryan, H. Januszewicz, M. Wolf. Am. J. Med.112, 262 (2002)., [265] A. Vijayananthan, A. V. Arumugam, G. Kumar, D. Harichandra. Int. J. Biomed. Imaging4 (2), e23 (2008)..
Gallium most commonly adopts the +3 oxidation state, although lower-valent gallium chemistry is well established in specialized compounds. Gallium(III) oxide (Ga₂O₃) is a wide-band-gap oxide of growing interest for power and ultraviolet devices. Gallium arsenide (GaAs), gallium nitride (GaN), gallium phosphide (GaP), and gallium antimonide (GaSb) are important III-V semiconductors. Gallium(III) chloride (GaCl₃) is a Lewis acidic halide and forms many adducts. Gallium(III) salts often hydrolyze in water, reflecting the high charge density of Ga³⁺.
See more information at the Gallium compound page.
Compact gallium metal has low acute toxicity, but it can stain skin and damage aluminium parts by liquid-metal embrittlement. Dusts, fumes, and soluble gallium compounds require normal laboratory controls because toxicity depends strongly on compound form and exposure route. Gallium arsenide (GaAs) introduces additional concern from arsenic during machining, heating, or waste handling. Medical radioisotopes present isotope-specific radiation hazards.
Its toxicity appears to be of a low order, but should be handled with care until more data is available.
Gallium occurs at trace levels in many minerals, especially those associated with aluminium and zinc ores. It substitutes for chemically similar ions rather than forming abundant gallium minerals. Weathering and industrial processing can mobilize small amounts, but gallium is not a major nutrient and has no well-established biological role. Environmental concern is usually tied to mining residues, semiconductor waste, and associated elements such as arsenic rather than to metallic gallium alone.
Gallium supply is dominated by by-product recovery, especially from bauxite processing liquors and, to a lesser extent, zinc-processing streams. Because primary ores are not mined for gallium alone, output can be constrained by aluminium and zinc production, refinery technology, and purification capacity. Demand is driven mainly by semiconductor and optoelectronic materials, where high purity is essential. Recycling occurs from manufacturing scrap and some end-of-life material, but dispersed uses and complex devices limit complete recovery. Substitution is application-specific; silicon, silicon carbide, or other III-V compounds can replace gallium materials in some devices but not without design changes.
Gallium is often found as a trace element in diaspore, sphalerite, germanite, bauxite, and coal. Some flue dusts from burning coal have been shown to contain as much 1.5 percent gallium.
Gallium is a relatively rare element in the cosmos compared with lighter metals. Its stable isotopes, ⁶⁹Ga and ⁷¹Ga, are produced in stellar nucleosynthesis pathways involving neutron capture and related processes in evolved stars and supernova environments. In planetary materials it behaves as a moderately volatile, lithophile to chalcophile trace element and is used in geochemical studies of differentiation and volatility.
- Gallium expands on freezing, so solidification can break rigid containers.
- The liquid metal has an unusually wide liquid range before boiling.
- Gallium can diffuse into aluminium and make it crumble under stress.
- Natural gallium consists mainly of two stable isotopes, ⁶⁹Ga and ⁷¹Ga.
- Very high-purity gallium is needed for many semiconductor applications.
이미지
특성
물리적 특성
- 원자 반지름(경험값)
- 130 pm 모든 원소의 원자 반지름(경험값) 비교 →
- 공유 결합 반지름
- 122 pm 모든 원소의 공유 결합 반지름 비교 →
- 반데르발스 반지름
- 187 pm 모든 원소의 반데르발스 반지름 비교 →
- 금속 반지름
- 125 pm 모든 원소의 금속 반지름 비교 →
- 밀도
- 5910 kg/m³ 모든 원소의 밀도 비교 →
- 몰 부피
- 0.0118 L/mol
- STP에서의 상
- 고체 모든 원소의 STP에서의 상 비교 →
- 녹는점
- 29.76 °C 모든 원소의 녹는점 비교 →
- 끓는점
- 2203.85 °C 모든 원소의 끓는점 비교 →
- 열전도율
- 28.1 W/(m·K) 모든 원소의 열전도율 비교 →
- 비열
- 0.373 J/(g·K) 모든 원소의 비열 비교 →
- 몰 열용량
- 26.03 J/(mol·K) 모든 원소의 몰 열용량 비교 →
- 결정 구조
- 사방 모든 원소의 결정 구조 비교 →
화학적 특성
- 전기 음성도(Pauling)
- 1.81 모든 원소의 전기 음성도(Pauling) 비교 →
- 전기 음성도(Allen)
- 1.756
- 전자 친화도
- 0.3 eV
- 제1 이온화 에너지
- 5.999302 eV 모든 원소의 제1 이온화 에너지 비교 →
- 제2 이온화 에너지
- 20.515211 eV 모든 원소의 제2 이온화 에너지 비교 →
- 제3 이온화 에너지
- 30.725866 eV 모든 원소의 제3 이온화 에너지 비교 →
- 제4 이온화 에너지
- 63.241218 eV 모든 원소의 제4 이온화 에너지 비교 →
- 제5 이온화 에너지
- 86.010296 eV 모든 원소의 제5 이온화 에너지 비교 →
- 산화 상태
- −5, −4, −3, −2, −1, 0, +1, +2, +3 모든 원소의 산화 상태 비교 →
- 원자가 전자
- 3 모든 원소의 원자가 전자 비교 →
- 전자 배치
- [Ar] 4s2 3d10 4p1
열역학적 특성
- 삼중점(온도)
- 29.7666 °C
- 융해열
- 0.05793647 eV 모든 원소의 융해열 비교 →
- 기화열
- 2.653262 eV 모든 원소의 기화열 비교 →
- 승화열
- 2.808727 eV
- 원자화열
- 2.808727 eV
- 원자화 엔탈피
- 2.818676 eV
핵 특성
- 양성자 수
- 31 모든 원소의 양성자 수 비교 →
- 중성자 수
- 38 모든 원소의 중성자 수 비교 →
- 알려진 동위원소 수
- 33 모든 원소의 알려진 동위원소 수 비교 →
- 안정 동위원소 수
- 2 모든 원소의 안정 동위원소 수 비교 →
- 가장 안정한 동위원소
- Ga-69
- 발견 연도
- 1875
존재비
- 존재비(지각)
- 19 mg/kg 모든 원소의 존재비(지각) 비교 →
- 존재비(해양)
- 3 × 10−5 mg/L 모든 원소의 존재비(해양) 비교 →
결정 구조
- 격자 상수 a
- 451 pm
전자 구조
- 전자껍질별 전자 수
- 2, 8, 18, 3 모든 원소의 전자껍질별 전자 수 비교 →
식별자
- CAS 등록 번호
- 7440-55-3 모든 원소의 CAS 등록 번호 비교 →
- 항 기호
- 2P°1/2
- InChI
- InChI=1S/Ga
- InChI 키
- GYHNNYVSQQEPJS-UHFFFAOYSA-N
전자 배치 측정값
Ga: 3d¹⁰ 4s² 4p¹[Ar] 3d¹⁰ 4s² 4p¹1s² 2s² 2p⁶ 3s² 3p⁶ 3d¹⁰ 4s² 4p¹원자 모형
동위원소에 따라 중성자 수, 질량, 안정성은 달라지지만, 중성 원자의 전자 배치는 달라지지 않습니다.
개략적인 원자 모형이며 실제 비율과 다릅니다.
원자 지문
방출 / 흡수 스펙트럼
동위원소 분포
| 질량수 | 원자 질량(u) | 천연 존재비 | 반감기 |
|---|---|---|---|
| 69 안정 | 68.9255735 ± 0.0000013 | 60.1080% | 안정 |
| 71 안정 | 70.92470258 ± 0.00000087 | 39.8920% | 안정 |
상 / 상태
이유: 녹는점(29.76 °C)보다 4.8 °C 낮음
개략도이며 실제 비율과 다름
상전이점
전이 에너지
녹는점에서 1 mol을 녹이는 데 필요한 에너지
끓는점에서 1 mol을 기화시키는 데 필요한 에너지
승화점에서 1 mol을 승화시키는 데 필요한 에너지
밀도
표준 조건에서
표준 조건에서
심화
원자 스펙트럼
전체 31개 중 10개를 표시합니다. 이온 전하순으로 정렬되었습니다(오름차순).
보유 스펙트럼선 데이터 ?
| 이온 | 전하 | 총 스펙트럼선 수 | 전이 확률 | 준위 표기 |
|---|---|---|---|---|
| Ga I | 0 | 342 | 23 | 342 |
| Ga II | +1 | 176 | 10 | 176 |
| Ga III | +2 | 113 | 2 | 113 |
| Ga IV | +3 | 594 | 0 | 594 |
| Ga V | +4 | 185 | 0 | 185 |
| Ga VI | +5 | 501 | 0 | 501 |
| Ga VII | +6 | 451 | 0 | 451 |
보유 에너지 준위 데이터 ?
| 이온 | 전하 | 준위 |
|---|---|---|
| Ga I | 0 | 262 |
| Ga II | +1 | 96 |
| Ga III | +2 | 61 |
| Ga IV | +3 | 192 |
| Ga V | +4 | 92 |
| Ga VI | +5 | 158 |
| Ga VII | +6 | 181 |
| Ga VIII | +7 | 2 |
| Ga IX | +8 | 2 |
| Ga X | +9 | 2 |
이온 반지름
| 전하 | 배위 | 스핀 | 반지름 |
|---|---|---|---|
| +3 | 4 | 해당 없음 | 47 pm |
| +3 | 5 | 해당 없음 | 55.00000000000001 pm |
| +3 | 6 | 해당 없음 | 62 pm |
화합물
동위원소 (2)
| 질량수 | 원자 질량(u) | 천연 존재비 | 반감기 | 붕괴 방식 | |
|---|---|---|---|---|---|
| 69 안정 | 68.9255735 ± 0.0000013 | 60.1080% ± 0.0090% | 안정 | stable | |
| 71 안정 | 70.92470258 ± 0.00000087 | 39.8920% ± 0.0090% | 안정 | stable |
스펙트럼선
| 파장(nm) | 세기 | 이온화 단계 | 유형 | 전이 | 정확도 | 출처 | |
|---|---|---|---|---|---|---|---|
| 417.33 nm | 해당 없음 | ID 486 | emission | 3s2.3p3 2P* → 3s2.3p3 2P* | 측정값 | NIST | |
| 424.0525 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.70p 2P* | 측정값 | NIST | |
| 424.0525 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.70p 2P* | 측정값 | NIST | |
| 424.0651 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.69p 2P* | 측정값 | NIST | |
| 424.0651 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.69p 2P* | 측정값 | NIST | |
| 424.08 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.68p 2P* | 측정값 | NIST | |
| 424.08 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.68p 2P* | 측정값 | NIST | |
| 424.0924 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.67p 2P* | 측정값 | NIST | |
| 424.0924 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.67p 2P* | 측정값 | NIST | |
| 424.1098 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.66p 2P* | 측정값 | NIST | |
| 424.1098 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.66p 2P* | 측정값 | NIST | |
| 424.1257 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.65p 2P* | 측정값 | NIST | |
| 424.1257 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.65p 2P* | 측정값 | NIST | |
| 424.1406 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.64p 2P* | 측정값 | NIST | |
| 424.1406 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.64p 2P* | 측정값 | NIST | |
| 424.1588 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.63p 2P* | 측정값 | NIST | |
| 424.1588 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.63p 2P* | 측정값 | NIST | |
| 424.1761 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.62p 2P* | 측정값 | NIST | |
| 424.1761 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.62p 2P* | 측정값 | NIST | |
| 424.1948 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.61p 2P* | 측정값 | NIST | |
| 424.1948 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.61p 2P* | 측정값 | NIST | |
| 424.2157 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.60p 2P* | 측정값 | NIST | |
| 424.2157 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.60p 2P* | 측정값 | NIST | |
| 424.2367 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.59p 2P* | 측정값 | NIST | |
| 424.2367 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.59p 2P* | 측정값 | NIST | |
| 424.2582 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.58p 2P* | 측정값 | NIST | |
| 424.2582 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.58p 2P* | 측정값 | NIST | |
| 424.2826 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.57p 2P* | 측정값 | NIST | |
| 424.2826 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.57p 2P* | 측정값 | NIST | |
| 424.3887 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.53p 2P* | 측정값 | NIST | |
| 424.3887 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.53p 2P* | 측정값 | NIST | |
| 424.4204 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.52p 2P* | 측정값 | NIST | |
| 424.4204 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.52p 2P* | 측정값 | NIST | |
| 424.4531 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.51p 2P* | 측정값 | NIST | |
| 424.4531 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.51p 2P* | 측정값 | NIST | |
| 424.4886 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.50p 2P* | 측정값 | NIST | |
| 424.4886 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.50p 2P* | 측정값 | NIST | |
| 424.5261 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.49p 2P* | 측정값 | NIST | |
| 424.5261 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.49p 2P* | 측정값 | NIST | |
| 424.5675 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.48p 2P* | 측정값 | NIST | |
| 424.5675 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.48p 2P* | 측정값 | NIST | |
| 424.6112 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.47p 2P* | 측정값 | NIST | |
| 424.6112 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.47p 2P* | 측정값 | NIST | |
| 424.6563 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.46p 2P* | 측정값 | NIST | |
| 424.6563 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.46p 2P* | 측정값 | NIST | |
| 424.7046 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.45p 2P* | 측정값 | NIST | |
| 424.7046 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.45p 2P* | 측정값 | NIST | |
| 424.7569 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.44p 2P* | 측정값 | NIST | |
| 424.7569 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.44p 2P* | 측정값 | NIST | |
| 424.8143 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.43p 2P* | 측정값 | NIST | |
| 424.8143 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.43p 2P* | 측정값 | NIST | |
| 424.8743 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.42p 2P* | 측정값 | NIST | |
| 424.8743 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.42p 2P* | 측정값 | NIST | |
| 424.94 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.41p 2P* | 측정값 | NIST | |
| 424.94 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.41p 2P* | 측정값 | NIST | |
| 425.4789 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.34d 2D | 측정값 | NIST | |
| 425.4799 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.34d 2D | 측정값 | NIST | |
| 426.035 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.30d 2D | 측정값 | NIST | |
| 426.0365 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.30d 2D | 측정값 | NIST | |
| 426.6348 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.27d 2D | 측정값 | NIST | |
| 426.6367 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.27d 2D | 측정값 | NIST | |
| 427.1688 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.25d 2D | 측정값 | NIST | |
| 427.1712 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.25d 2D | 측정값 | NIST | |
| 427.8589 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.23d 2D | 측정값 | NIST | |
| 427.8621 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.23d 2D | 측정값 | NIST | |
| 428.7731 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.21d 2D | 측정값 | NIST | |
| 428.7774 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.21d 2D | 측정값 | NIST | |
| 429.3459 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.20d 2D | 측정값 | NIST | |
| 429.3507 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.20d 2D | 측정값 | NIST | |
| 430.0203 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.19d 2D | 측정값 | NIST | |
| 430.026 nm | 해당 없음 | Ga I | emission | 4s2.5s 2S → 4s2.19d 2D | 측정값 | NIST | |
| 448.84 nm | 해당 없음 | ID 505 | emission | 5p 2P* → 5d 2D | 측정값 | NIST | |
| 459.16 nm | 해당 없음 | ID 505 | emission | 5s 2S → 5p 2P* | 측정값 | NIST | |
| 557 nm | 해당 없음 | ID 482 | emission | 1s.5s 3S → 1s.5p 3P* | 측정값 | NIST | |
| 567.7 nm | 해당 없음 | ID 498 | emission | 3s2.3p2 3P → 3s2.3p2 3P | 측정값 | NIST | |
| 587 nm | 해당 없음 | ID 482 | emission | 1s.4p 3P* → 1s.4d 3D | 측정값 | NIST | |
| 675 nm | 해당 없음 | ID 486 | emission | 3s2.3p3 2D* → 3s2.3p3 2D* | 측정값 | NIST | |
| 706.7 nm | 해당 없음 | ID 505 | emission | 4p 2P* → 4d 2D | 측정값 | NIST |
확장 특성
공유 결합 반지름(확장)
- 공유 결합 반지름(Pyykkö)
- 124 pm
- 공유 결합 반지름(Pyykkö, 이중 결합)
- 117 pm
- 공유 결합 반지름(Pyykkö, 삼중 결합)
- 121 pm
반데르발스 반지름
- Bondi
- 187 pm
- Batsanov
- 210 pm
- Alvarez
- 232 pm
- UFF
- 438.3 pm
- MM3
- 246 pm
- Dreiding
- 439 pm
원자 및 금속 반지름
- 원자 반지름(Rahm)
- 233 pm
- 금속 반지름(C12)
- 140 pm
번호 척도
- Mendeleev
- 83
- Pettifor
- 81
- Glawe
- 79
전기 음성도 척도
- Ghosh
- 0
- Miedema
- 4
- Gunnarsson–Lundqvist
- 3
- Robles–Bartolotti
- 3
분극률 및 분산
- 쌍극자 분극률
- 50 a.u.
- 쌍극자 분극률(불확도)
- 3 a.u.
- C₆
- 498 Ha·Bohr6
- C₆ (Gould–Bučko)
- 456 Ha·Bohr6
미데마 매개변수
- 미데마 몰 부피
- 11.82 cm3/mol
- 미데마 전자 밀도
- 2
공급 위험 및 경제성
- 생산 집중도
- 54
- 상대적 공급 위험
- 8
- 정치적 안정성(최대 생산국)
- 24
상전이 및 동소체
| 녹는점 | 302.91 K |
| 끓는점 | 2502.15 K |
| 삼중점(온도) | 302.92 K |
산화 상태 분류
심화 참고 데이터
차폐 상수 (8)
| n | 오비탈 | σ |
|---|---|---|
| 1 | s | 0.6906 |
| 2 | p | 3.9092 |
| 2 | s | 8.401 |
| 3 | d | 15.9067 |
| 3 | p | 14.7964 |
| 3 | s | 14.0038 |
| 4 | p | 24.7784 |
| 4 | s | 23.9332 |
결정 반지름 상세 정보 (3)
| 전하 | CN | 스핀 | rcrystal (pm) | 기원 |
|---|---|---|---|---|
| 3 | IV | 61 | ||
| 3 | V | 69 | ||
| 3 | VI | 76 | from r^3 vs V plots, |
동위원소 붕괴 방식 (51)
| 동위원소 | 모드 | 세기 |
|---|---|---|
| 56 | p | — |
| 57 | p | — |
| 58 | p | — |
| 59 | p | — |
| 60 | B+ | 100% |
| 60 | B+p | 1.6% |
| 60 | B+A | 0% |
| 61 | B+ | 100% |
| 61 | B+p | 0.3% |
| 62 | B+ | 100% |
X선 산란 인자 (506)
| 에너지 (eV) | f₁ | f₂ |
|---|---|---|
| 10 | — | 2.98527 |
| 10.1617 | — | 2.98141 |
| 10.3261 | — | 2.97756 |
| 10.4931 | — | 2.9737 |
| 10.6628 | — | 2.96986 |
| 10.8353 | — | 2.96602 |
| 11.0106 | — | 2.95695 |
| 11.1886 | — | 2.90859 |
| 11.3696 | — | 2.86103 |
| 11.5535 | — | 2.81425 |
추가 데이터
Estimated Crustal Abundance
The estimated element abundance in the earth's crust.
1.9×101 milligrams per kilogram
참고 문헌 (1)
Estimated Oceanic Abundance
The estimated element abundance in the earth's oceans.
3×10-5 milligrams per liter
참고 문헌 (1)
Sources
Sources of this element.
Gallium is often found as a trace element in diaspore, sphalerite, germanite, bauxite, and coal. Some flue dusts from burning coal have been shown to contain as much 1.5 percent gallium.
참고 문헌 (1)
- [6] Gallium https://periodic.lanl.gov/31.shtml
참고 문헌
(9)
Data deposited in or computed by PubChem
The half-life and atomic mass data was provided by the Atomic Mass Data Center at the International Atomic Energy Agency.
Element data are cited from the Atomic weights of the elements (an IUPAC Technical Report). The IUPAC periodic table of elements can be found at https://iupac.org/what-we-do/periodic-table-of-elements/. Additional information can be found within IUPAC publication doi:10.1515/pac-2015-0703 Copyright © 2020 International Union of Pure and Applied Chemistry.
The information are cited from Pure Appl. Chem. 2018; 90(12): 1833-2092, https://doi.org/10.1515/pac-2015-0703.
Thomas Jefferson National Accelerator Facility (Jefferson Lab) is one of 17 national laboratories funded by the U.S. Department of Energy. The lab's primary mission is to conduct basic research of the atom's nucleus using the lab's unique particle accelerator, known as the Continuous Electron Beam Accelerator Facility (CEBAF). For more information visit https://www.jlab.org/
The periodic table at the LANL (Los Alamos National Laboratory) contains basic element information together with the history, source, properties, use, handling and more. The provenance data may be found from the link under the source name.
The periodic table contains NIST's critically-evaluated data on atomic properties of the elements. The provenance data that include data for atomic spectroscopy, X-ray and gamma ray, radiation dosimetry, nuclear physics, and condensed matter physics may be found from the link under the source name. Ref: https://www.nist.gov/pml/atomic-spectra-database
This section provides all form of data related to element Gallium.
The element property data was retrieved from publications.