Gallium (Ga)
post-transition-metalSolid
標準原子量
69.723 u電子配置
[Ar] 4s2 3d10 4p1融点
29.76 °C沸点
2203.85 °C密度
5910 kg/m³酸化数
−5, −4, −3, −2, −1, 0, +1, +2, +3電気陰性度（Pauling）
1.81第1イオン化エネルギー
5.999302 eV発見年
1875原子半径
130 pm詳細
Gallium is a soft post-transition metal in group 13, chemically related to aluminium and indium. It is notable for melting just above room temperature, forming low-melting alloys, and supplying semiconductors through compounds such as gallium arsenide and gallium nitride. In nature it is dispersed rather than concentrated in its own ores, so it is recovered mainly as a by-product of aluminium and zinc processing.
It is one of four metals mercury, cesium, and rubidium which can be liquid near room temperature and, thus, can be used in high-temperature thermometers. It has one of the longest liquid ranges of any metal and has a low vapor pressure even at high temperatures.
There is a strong tendency for gallium to supercool below its freezing point. Therefore, seeding may be necessary to initiate solidification.
Ultra-pure gallium has a beautiful, silvery appearance, and the solid metal exhibits a conchoidal fracture similar to glass. The metal expands 3.1 percent on solidifying; therefore, it should not be stored in glass or metal containers, because they may break as the metal solidifies.
High-purity gallium is attacked only slowly by mineral acids.
The name derives from the Latin gallia for France. It was discovered in zinc blende by the French chemist Paul-Emile Lecoq de Boisbaudran in 1875. It was first isolated in 1878 by Lecoq de Boisbaudran and the French chemist Émile-Clément Jungflesch.
First proposed to exist by Dmitri Mendeleyev in 1871 based on gaps in his newly created Periodic Table of Elements, gallium was discovered spectroscopically by the French chemist Paul-Émile Lecoq de Boisbaudran in 1875. Later that same year, Lecoq was able to obtain pure gallium through the electrolysis of a solution of gallium hydroxide (Ga(OH)3) in potassium hydroxide (KOH). Trace amounts of gallium are found in diaspore, sphalerite, germanite and bauxite as well as in the byproducts of burning coal.
From the Latin word Gallia, France; also from Latin, gallus, a translation of "Lecoq," a cock. Predicted and described by Mendeleev as ekaaluminum, and discovered spectroscopically by Lecoq de Boisbaudran in 1875, who in the same year obtained the free metal by electrolysis of a solution of the hydroxide in KOH.
Pure gallium is a silvery, lustrous metal that is solid at ordinary room temperature but melts at about 30 °C. The solid is brittle enough to fracture, while the liquid readily wets many surfaces and can penetrate some metals, especially aluminium.
Gallium is used chiefly in compound semiconductors. Gallium arsenide (GaAs) is important in high-frequency electronics, optoelectronics, infrared light-emitting diodes, and some photovoltaic cells. Gallium nitride (GaN) is central to blue and ultraviolet light-emitting diodes, laser diodes, and efficient power electronics. Low-melting gallium alloys are used in thermometers, thermal interfaces, and specialized heat-transfer applications where mercury is undesirable. Radioisotopes such as ⁶⁷Ga and ⁶⁸Ga are used in diagnostic nuclear medicine.
Gallium melts near room temperature and has one of the largest liquid ranges of any metal, so it has found use in high temperature thermometers. Gallium easily forms alloys with most metals and has been used to create low melting alloys. Gallium is used as a doping material for semiconductors and has been used to produce solid-state items like transistors and light emitting diodes. Gallium arsenide (GaAs) can produce laser light directly from electricity. Large amounts of gallium trichloride (GaCl3) have been gathered to build the Gallium Neutrino Observatory, an observatory located in Italy built to study particles called neutrinos which are produced inside the sun during the process of nuclear fusion.
Gallium wets glass or porcelain and forms a brilliant mirror when it is painted on glass. It is widely used in doping semiconductors and producing solid-state devices such as transistors.
Magnesium gallate containing divalent impurities, such as Mn+2, is finding use in commercial ultraviolet-activated powder phosphors. Gallium arsenide is capable of converting electricity directly into coherent light. Gallium readily alloys with most metals, and has been used as a component in low-melting alloys.
Isotopes in Medicine
68Ga (with a half-life of 68 min) is a radioactive isotope that emits positrons, which are used to produce high-resolution imaging with positron emission tomography (PET). Unlike 18F, which is most commonly used, 68Ga is more easily produced using a cost-effective generator with the parent radionuclide 68Ge (with a half-life of 271 days) (Fig. IUPAC.31.1). Once produced, 68Ga easily couples to biomolecules (most commonly peptides) that target G-protein coupled receptors, which are over-expressed on human tumor cells. The labeled protein acts as a radioactive tracer for cancer diagnostics. PET images are often coupled with CT images to get a more complete picture of the body [256] I. Kayani, B. G. Conry, A. M. Groves, T. Win, J. Dickson, M. Caplin, J. B. Bomanji. J. Nucl. Med.50, 1927 (2009)., [257] M. Fani, J. P. André, H. R. Maecke. Contrast Media Mol. Imaging3, 67 (2008)., [258] G. J. Ehrhardt, M. J. Welch. J. Nucl. Med.19, 925 (1978)., [259] G. Ehrhardt, S. Wagner, M. J. Welch. J. Labelled Compd. Radiopharm.16, 111 (1979)., [260] M. V. Cantorias, S. D. Figueroa, T. P. Quinn, J. R. Lever, T. J. Hoffman, L. D. Watkinson, T. L. Carmack, C. S. Cutler. Nucl. Med. Biol.36, 505 (2009)., [261] J. C. Rold, T. L. Sieckman, G. L. Figueroa, S. D. Sublett, S. V. Engelbrecht, H. Cutler, C. S. Jurisson, S. S. Hoffman, T. J. Bottenus, B. N. Garrison. Trans. Am. Nucl. Soc.98, 802 (2008)., [262] J. Fitzsimmons, M. Fassbender, R. Atcher. J. Nucl. Med.48, 319 (2007).. Radiopharmaceutical 67Ga (with a half-life of 78 h) is a gamma-emitting isotope used in scintigraphy for medical imaging [263] S. M. Larson, P. B. Hoffer. “Normal patterns of localization”, in Gallium-67 Imaging, P. B. Hoffer, C. Bekerman, and R. E. Henkin (Eds.), John Wiley, New York (1978)., [264] A. Wirth, J. F. Seymour, R. J. Hicks, R. Ware, R. Fisher, M. Prince, M. P. MacManus, G. Ryan, H. Januszewicz, M. Wolf. Am. J. Med.112, 262 (2002)., [265] A. Vijayananthan, A. V. Arumugam, G. Kumar, D. Harichandra. Int. J. Biomed. Imaging4 (2), e23 (2008)..
Gallium most commonly adopts the +3 oxidation state, although lower-valent gallium chemistry is well established in specialized compounds. Gallium(III) oxide (Ga₂O₃) is a wide-band-gap oxide of growing interest for power and ultraviolet devices. Gallium arsenide (GaAs), gallium nitride (GaN), gallium phosphide (GaP), and gallium antimonide (GaSb) are important III-V semiconductors. Gallium(III) chloride (GaCl₃) is a Lewis acidic halide and forms many adducts. Gallium(III) salts often hydrolyze in water, reflecting the high charge density of Ga³⁺.
See more information at the Gallium compound page.
Compact gallium metal has low acute toxicity, but it can stain skin and damage aluminium parts by liquid-metal embrittlement. Dusts, fumes, and soluble gallium compounds require normal laboratory controls because toxicity depends strongly on compound form and exposure route. Gallium arsenide (GaAs) introduces additional concern from arsenic during machining, heating, or waste handling. Medical radioisotopes present isotope-specific radiation hazards.
Its toxicity appears to be of a low order, but should be handled with care until more data is available.
Gallium occurs at trace levels in many minerals, especially those associated with aluminium and zinc ores. It substitutes for chemically similar ions rather than forming abundant gallium minerals. Weathering and industrial processing can mobilize small amounts, but gallium is not a major nutrient and has no well-established biological role. Environmental concern is usually tied to mining residues, semiconductor waste, and associated elements such as arsenic rather than to metallic gallium alone.
Gallium supply is dominated by by-product recovery, especially from bauxite processing liquors and, to a lesser extent, zinc-processing streams. Because primary ores are not mined for gallium alone, output can be constrained by aluminium and zinc production, refinery technology, and purification capacity. Demand is driven mainly by semiconductor and optoelectronic materials, where high purity is essential. Recycling occurs from manufacturing scrap and some end-of-life material, but dispersed uses and complex devices limit complete recovery. Substitution is application-specific; silicon, silicon carbide, or other III-V compounds can replace gallium materials in some devices but not without design changes.
Gallium is often found as a trace element in diaspore, sphalerite, germanite, bauxite, and coal. Some flue dusts from burning coal have been shown to contain as much 1.5 percent gallium.
Gallium is a relatively rare element in the cosmos compared with lighter metals. Its stable isotopes, ⁶⁹Ga and ⁷¹Ga, are produced in stellar nucleosynthesis pathways involving neutron capture and related processes in evolved stars and supernova environments. In planetary materials it behaves as a moderately volatile, lithophile to chalcophile trace element and is used in geochemical studies of differentiation and volatility.
- Gallium expands on freezing, so solidification can break rigid containers.
- The liquid metal has an unusually wide liquid range before boiling.
- Gallium can diffuse into aluminium and make it crumble under stress.
- Natural gallium consists mainly of two stable isotopes, ⁶⁹Ga and ⁷¹Ga.
- Very high-purity gallium is needed for many semiconductor applications.
画像
性質
物理的性質
- 原子半径（経験値）
- 130 pm 全元素の原子半径（経験値）を比較 →
- 共有結合半径
- 122 pm 全元素の共有結合半径を比較 →
- ファンデルワールス半径
- 187 pm 全元素のファンデルワールス半径を比較 →
- 金属半径
- 125 pm 全元素の金属半径を比較 →
- 密度
- 5910 kg/m³ 全元素の密度を比較 →
- モル体積
- 0.0118 L/mol
- 標準温度・圧力（STP）での相
- 固体 全元素の標準温度・圧力（STP）での相を比較 →
- 融点
- 29.76 °C 全元素の融点を比較 →
- 沸点
- 2203.85 °C 全元素の沸点を比較 →
- 熱伝導率
- 28.1 W/(m·K) 全元素の熱伝導率を比較 →
- 比熱容量
- 0.373 J/(g·K) 全元素の比熱容量を比較 →
- モル熱容量
- 26.03 J/(mol·K) 全元素のモル熱容量を比較 →
- 結晶構造
- 斜方晶系 全元素の結晶構造を比較 →
化学的性質
- 電気陰性度（Pauling）
- 1.81 全元素の電気陰性度（Pauling）を比較 →
- 電気陰性度（Allen）
- 1.756
- 電子親和力
- 0.3 eV
- 第1イオン化エネルギー
- 5.999302 eV 全元素の第1イオン化エネルギーを比較 →
- 第2イオン化エネルギー
- 20.515211 eV 全元素の第2イオン化エネルギーを比較 →
- 第3イオン化エネルギー
- 30.725866 eV 全元素の第3イオン化エネルギーを比較 →
- 第4イオン化エネルギー
- 63.241218 eV 全元素の第4イオン化エネルギーを比較 →
- 第5イオン化エネルギー
- 86.010296 eV 全元素の第5イオン化エネルギーを比較 →
- 酸化数
- −5, −4, −3, −2, −1, 0, +1, +2, +3 全元素の酸化数を比較 →
- 価電子
- 3 全元素の価電子を比較 →
- 電子配置
- [Ar] 4s2 3d10 4p1
熱力学的性質
- 三重点（温度）
- 29.7666 °C
- 融解熱
- 0.05793647 eV 全元素の融解熱を比較 →
- 蒸発熱
- 2.653262 eV 全元素の蒸発熱を比較 →
- 昇華熱
- 2.808727 eV
- 原子化熱
- 2.808727 eV
- 原子化エンタルピー
- 2.818676 eV
原子核
- 陽子数
- 31 全元素の陽子数を比較 →
- 中性子数
- 38 全元素の中性子数を比較 →
- 既知の同位体
- 33 全元素の既知の同位体を比較 →
- 安定同位体
- 2 全元素の安定同位体を比較 →
- 最も安定な同位体
- Ga-69
- 発見年
- 1875
存在度
- 存在度（地殻）
- 19 mg/kg 全元素の存在度（地殻）を比較 →
- 存在度（海洋）
- 3 × 10−5 mg/L 全元素の存在度（海洋）を比較 →
結晶構造
- 格子定数a
- 451 pm
電子構造
- 各電子殻の電子数
- 2, 8, 18, 3 全元素の各電子殻の電子数を比較 →
識別子
- CAS登録番号
- 7440-55-3 全元素のCAS登録番号を比較 →
- 項記号
- 2P°1/2
- InChI
- InChI=1S/Ga
- InChI Key
- GYHNNYVSQQEPJS-UHFFFAOYSA-N
電子配置 測定値
Ga: 3d¹⁰ 4s² 4p¹[Ar] 3d¹⁰ 4s² 4p¹1s² 2s² 2p⁶ 3s² 3p⁶ 3d¹⁰ 4s² 4p¹原子モデル
同位体によって中性子数、質量、安定性は変わりますが、中性原子の電子配置は変わりません。
模式的な原子モデルです。実際の縮尺とは異なります。
原子の指紋
発光／吸収スペクトル
同位体分布
| 質量数 | 原子質量（u） | 天然存在比 | 半減期 |
|---|---|---|---|
| 69 安定 | 68.9255735 ± 0.0000013 | 60.1080% | 安定 |
| 71 安定 | 70.92470258 ± 0.00000087 | 39.8920% | 安定 |
相／状態
理由: 融点（29.76 °C）より4.8 °C低い
模式図、実際の縮尺とは異なります
相転移点
相転移エネルギー
融点で1 molを融解させるのに必要なエネルギー
沸点で1 molを蒸発させるのに必要なエネルギー
昇華点で1 molを昇華させるのに必要なエネルギー
密度
標準条件下
標準条件下
詳細
原子スペクトル
全31件中10件を表示しています。 イオンの電荷の昇順で並べています。
スペクトル線データの収録状況 ?
| イオン | 電荷 | スペクトル線の総数 | 遷移確率 | 準位の表記 |
|---|---|---|---|---|
| Ga I | 0 | 342 | 23 | 342 |
| Ga II | +1 | 176 | 10 | 176 |
| Ga III | +2 | 113 | 2 | 113 |
| Ga IV | +3 | 594 | 0 | 594 |
| Ga V | +4 | 185 | 0 | 185 |
| Ga VI | +5 | 501 | 0 | 501 |
| Ga VII | +6 | 451 | 0 | 451 |
準位データの収録状況 ?
| イオン | 電荷 | 準位 |
|---|---|---|
| Ga I | 0 | 262 |
| Ga II | +1 | 96 |
| Ga III | +2 | 61 |
| Ga IV | +3 | 192 |
| Ga V | +4 | 92 |
| Ga VI | +5 | 158 |
| Ga VII | +6 | 181 |
| Ga VIII | +7 | 2 |
| Ga IX | +8 | 2 |
| Ga X | +9 | 2 |
イオン半径
| 電荷 | 配位 | スピン | 半径 |
|---|---|---|---|
| +3 | 4 | データなし | 47 pm |
| +3 | 5 | データなし | 55.00000000000001 pm |
| +3 | 6 | データなし | 62 pm |
化合物
同位体 (2)
| 質量数 | 原子質量（u） | 天然存在比 | 半減期 | 崩壊形式 | |
|---|---|---|---|---|---|
| 69 安定 | 68.9255735 ± 0.0000013 | 60.1080% ± 0.0090% | 安定 | stable | |
| 71 安定 | 70.92470258 ± 0.00000087 | 39.8920% ± 0.0090% | 安定 | stable |
スペクトル線
| 波長（nm） | 強度 | 電離段階 | 種類 | 遷移 | 精度 | 出典 | |
|---|---|---|---|---|---|---|---|
| 417.33 nm | データなし | ID 486 | emission | 3s2.3p3 2P* → 3s2.3p3 2P* | 測定値 | NIST | |
| 424.0525 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.70p 2P* | 測定値 | NIST | |
| 424.0525 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.70p 2P* | 測定値 | NIST | |
| 424.0651 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.69p 2P* | 測定値 | NIST | |
| 424.0651 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.69p 2P* | 測定値 | NIST | |
| 424.08 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.68p 2P* | 測定値 | NIST | |
| 424.08 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.68p 2P* | 測定値 | NIST | |
| 424.0924 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.67p 2P* | 測定値 | NIST | |
| 424.0924 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.67p 2P* | 測定値 | NIST | |
| 424.1098 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.66p 2P* | 測定値 | NIST | |
| 424.1098 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.66p 2P* | 測定値 | NIST | |
| 424.1257 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.65p 2P* | 測定値 | NIST | |
| 424.1257 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.65p 2P* | 測定値 | NIST | |
| 424.1406 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.64p 2P* | 測定値 | NIST | |
| 424.1406 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.64p 2P* | 測定値 | NIST | |
| 424.1588 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.63p 2P* | 測定値 | NIST | |
| 424.1588 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.63p 2P* | 測定値 | NIST | |
| 424.1761 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.62p 2P* | 測定値 | NIST | |
| 424.1761 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.62p 2P* | 測定値 | NIST | |
| 424.1948 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.61p 2P* | 測定値 | NIST | |
| 424.1948 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.61p 2P* | 測定値 | NIST | |
| 424.2157 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.60p 2P* | 測定値 | NIST | |
| 424.2157 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.60p 2P* | 測定値 | NIST | |
| 424.2367 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.59p 2P* | 測定値 | NIST | |
| 424.2367 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.59p 2P* | 測定値 | NIST | |
| 424.2582 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.58p 2P* | 測定値 | NIST | |
| 424.2582 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.58p 2P* | 測定値 | NIST | |
| 424.2826 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.57p 2P* | 測定値 | NIST | |
| 424.2826 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.57p 2P* | 測定値 | NIST | |
| 424.3887 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.53p 2P* | 測定値 | NIST | |
| 424.3887 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.53p 2P* | 測定値 | NIST | |
| 424.4204 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.52p 2P* | 測定値 | NIST | |
| 424.4204 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.52p 2P* | 測定値 | NIST | |
| 424.4531 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.51p 2P* | 測定値 | NIST | |
| 424.4531 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.51p 2P* | 測定値 | NIST | |
| 424.4886 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.50p 2P* | 測定値 | NIST | |
| 424.4886 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.50p 2P* | 測定値 | NIST | |
| 424.5261 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.49p 2P* | 測定値 | NIST | |
| 424.5261 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.49p 2P* | 測定値 | NIST | |
| 424.5675 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.48p 2P* | 測定値 | NIST | |
| 424.5675 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.48p 2P* | 測定値 | NIST | |
| 424.6112 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.47p 2P* | 測定値 | NIST | |
| 424.6112 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.47p 2P* | 測定値 | NIST | |
| 424.6563 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.46p 2P* | 測定値 | NIST | |
| 424.6563 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.46p 2P* | 測定値 | NIST | |
| 424.7046 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.45p 2P* | 測定値 | NIST | |
| 424.7046 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.45p 2P* | 測定値 | NIST | |
| 424.7569 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.44p 2P* | 測定値 | NIST | |
| 424.7569 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.44p 2P* | 測定値 | NIST | |
| 424.8143 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.43p 2P* | 測定値 | NIST | |
| 424.8143 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.43p 2P* | 測定値 | NIST | |
| 424.8743 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.42p 2P* | 測定値 | NIST | |
| 424.8743 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.42p 2P* | 測定値 | NIST | |
| 424.94 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.41p 2P* | 測定値 | NIST | |
| 424.94 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.41p 2P* | 測定値 | NIST | |
| 425.4789 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.34d 2D | 測定値 | NIST | |
| 425.4799 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.34d 2D | 測定値 | NIST | |
| 426.035 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.30d 2D | 測定値 | NIST | |
| 426.0365 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.30d 2D | 測定値 | NIST | |
| 426.6348 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.27d 2D | 測定値 | NIST | |
| 426.6367 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.27d 2D | 測定値 | NIST | |
| 427.1688 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.25d 2D | 測定値 | NIST | |
| 427.1712 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.25d 2D | 測定値 | NIST | |
| 427.8589 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.23d 2D | 測定値 | NIST | |
| 427.8621 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.23d 2D | 測定値 | NIST | |
| 428.7731 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.21d 2D | 測定値 | NIST | |
| 428.7774 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.21d 2D | 測定値 | NIST | |
| 429.3459 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.20d 2D | 測定値 | NIST | |
| 429.3507 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.20d 2D | 測定値 | NIST | |
| 430.0203 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.19d 2D | 測定値 | NIST | |
| 430.026 nm | データなし | Ga I | emission | 4s2.5s 2S → 4s2.19d 2D | 測定値 | NIST | |
| 448.84 nm | データなし | ID 505 | emission | 5p 2P* → 5d 2D | 測定値 | NIST | |
| 459.16 nm | データなし | ID 505 | emission | 5s 2S → 5p 2P* | 測定値 | NIST | |
| 557 nm | データなし | ID 482 | emission | 1s.5s 3S → 1s.5p 3P* | 測定値 | NIST | |
| 567.7 nm | データなし | ID 498 | emission | 3s2.3p2 3P → 3s2.3p2 3P | 測定値 | NIST | |
| 587 nm | データなし | ID 482 | emission | 1s.4p 3P* → 1s.4d 3D | 測定値 | NIST | |
| 675 nm | データなし | ID 486 | emission | 3s2.3p3 2D* → 3s2.3p3 2D* | 測定値 | NIST | |
| 706.7 nm | データなし | ID 505 | emission | 4p 2P* → 4d 2D | 測定値 | NIST |
詳細な性質
共有結合半径（詳細）
- 共有結合半径（Pyykkö）
- 124 pm
- 共有結合半径（Pyykkö、二重結合）
- 117 pm
- 共有結合半径（Pyykkö、三重結合）
- 121 pm
ファンデルワールス半径
- Bondi
- 187 pm
- Batsanov
- 210 pm
- Alvarez
- 232 pm
- UFF
- 438.3 pm
- MM3
- 246 pm
- Dreiding
- 439 pm
原子半径と金属半径
- 原子半径（Rahm）
- 233 pm
- 金属半径（C12）
- 140 pm
番号付けの尺度
- Mendeleev
- 83
- Pettifor
- 81
- Glawe
- 79
電気陰性度の尺度
- Ghosh
- 0
- Miedema
- 4
- Gunnarsson–Lundqvist
- 3
- Robles–Bartolotti
- 3
分極率と分散
- 双極子分極率
- 50 a.u.
- 双極子分極率（不確かさ）
- 3 a.u.
- C₆
- 498 Ha·Bohr6
- C₆ (Gould–Bučko)
- 456 Ha·Bohr6
ミーデマパラメータ
- ミーデマモル体積
- 11.82 cm3/mol
- ミーデマ電子密度
- 2
供給リスクと経済性
- 生産集中度
- 54
- 相対供給リスク
- 8
- 政治的安定性（最大生産国）
- 24
相転移と同素体
| 融点 | 302.91 K |
| 沸点 | 2502.15 K |
| 三重点（温度） | 302.92 K |
酸化数の分類
専門参考データ
遮蔽定数 (8)
| n | 軌道 | σ |
|---|---|---|
| 1 | s | 0.6906 |
| 2 | p | 3.9092 |
| 2 | s | 8.401 |
| 3 | d | 15.9067 |
| 3 | p | 14.7964 |
| 3 | s | 14.0038 |
| 4 | p | 24.7784 |
| 4 | s | 23.9332 |
結晶半径の詳細 (3)
| 電荷 | CN | スピン | rcrystal (pm) | 由来 |
|---|---|---|---|---|
| 3 | IV | 61 | ||
| 3 | V | 69 | ||
| 3 | VI | 76 | from r^3 vs V plots, |
同位体の崩壊形式 (51)
| 同位体 | モード | 強度 |
|---|---|---|
| 56 | p | — |
| 57 | p | — |
| 58 | p | — |
| 59 | p | — |
| 60 | B+ | 100% |
| 60 | B+p | 1.6% |
| 60 | B+A | 0% |
| 61 | B+ | 100% |
| 61 | B+p | 0.3% |
| 62 | B+ | 100% |
X線散乱因子 (506)
| エネルギー (eV) | f₁ | f₂ |
|---|---|---|
| 10 | — | 2.98527 |
| 10.1617 | — | 2.98141 |
| 10.3261 | — | 2.97756 |
| 10.4931 | — | 2.9737 |
| 10.6628 | — | 2.96986 |
| 10.8353 | — | 2.96602 |
| 11.0106 | — | 2.95695 |
| 11.1886 | — | 2.90859 |
| 11.3696 | — | 2.86103 |
| 11.5535 | — | 2.81425 |
追加データ
Estimated Crustal Abundance
The estimated element abundance in the earth's crust.
1.9×101 milligrams per kilogram
参考文献 (1)
Estimated Oceanic Abundance
The estimated element abundance in the earth's oceans.
3×10-5 milligrams per liter
参考文献 (1)
Sources
Sources of this element.
Gallium is often found as a trace element in diaspore, sphalerite, germanite, bauxite, and coal. Some flue dusts from burning coal have been shown to contain as much 1.5 percent gallium.
参考文献 (1)
- [6] Gallium https://periodic.lanl.gov/31.shtml
参考文献
(9)
Data deposited in or computed by PubChem
The half-life and atomic mass data was provided by the Atomic Mass Data Center at the International Atomic Energy Agency.
Element data are cited from the Atomic weights of the elements (an IUPAC Technical Report). The IUPAC periodic table of elements can be found at https://iupac.org/what-we-do/periodic-table-of-elements/. Additional information can be found within IUPAC publication doi:10.1515/pac-2015-0703 Copyright © 2020 International Union of Pure and Applied Chemistry.
The information are cited from Pure Appl. Chem. 2018; 90(12): 1833-2092, https://doi.org/10.1515/pac-2015-0703.
Thomas Jefferson National Accelerator Facility (Jefferson Lab) is one of 17 national laboratories funded by the U.S. Department of Energy. The lab's primary mission is to conduct basic research of the atom's nucleus using the lab's unique particle accelerator, known as the Continuous Electron Beam Accelerator Facility (CEBAF). For more information visit https://www.jlab.org/
The periodic table at the LANL (Los Alamos National Laboratory) contains basic element information together with the history, source, properties, use, handling and more. The provenance data may be found from the link under the source name.
The periodic table contains NIST's critically-evaluated data on atomic properties of the elements. The provenance data that include data for atomic spectroscopy, X-ray and gamma ray, radiation dosimetry, nuclear physics, and condensed matter physics may be found from the link under the source name. Ref: https://www.nist.gov/pml/atomic-spectra-database
This section provides all form of data related to element Gallium.
The element property data was retrieved from publications.