Gallium (Ga)
post-transition-metalSolid
मानक परमाणु भार
69.723 uइलेक्ट्रॉन विन्यास
[Ar] 4s2 3d10 4p1गलनांक
29.76 °Cक्वथनांक
2203.85 °Cघनत्व
5910 kg/m³ऑक्सीकरण अवस्थाएँ
−5, −4, −3, −2, −1, 0, +1, +2, +3विद्युतऋणात्मकता (पॉलिंग)
1.81आयनन ऊर्जा (प्रथम)
5.999302 eVखोज का वर्ष
1875परमाणु त्रिज्या
130 pmविवरण
Gallium is a soft post-transition metal in group 13, chemically related to aluminium and indium. It is notable for melting just above room temperature, forming low-melting alloys, and supplying semiconductors through compounds such as gallium arsenide and gallium nitride. In nature it is dispersed rather than concentrated in its own ores, so it is recovered mainly as a by-product of aluminium and zinc processing.
It is one of four metals mercury, cesium, and rubidium which can be liquid near room temperature and, thus, can be used in high-temperature thermometers. It has one of the longest liquid ranges of any metal and has a low vapor pressure even at high temperatures.
There is a strong tendency for gallium to supercool below its freezing point. Therefore, seeding may be necessary to initiate solidification.
Ultra-pure gallium has a beautiful, silvery appearance, and the solid metal exhibits a conchoidal fracture similar to glass. The metal expands 3.1 percent on solidifying; therefore, it should not be stored in glass or metal containers, because they may break as the metal solidifies.
High-purity gallium is attacked only slowly by mineral acids.
The name derives from the Latin gallia for France. It was discovered in zinc blende by the French chemist Paul-Emile Lecoq de Boisbaudran in 1875. It was first isolated in 1878 by Lecoq de Boisbaudran and the French chemist Émile-Clément Jungflesch.
First proposed to exist by Dmitri Mendeleyev in 1871 based on gaps in his newly created Periodic Table of Elements, gallium was discovered spectroscopically by the French chemist Paul-Émile Lecoq de Boisbaudran in 1875. Later that same year, Lecoq was able to obtain pure gallium through the electrolysis of a solution of gallium hydroxide (Ga(OH)3) in potassium hydroxide (KOH). Trace amounts of gallium are found in diaspore, sphalerite, germanite and bauxite as well as in the byproducts of burning coal.
From the Latin word Gallia, France; also from Latin, gallus, a translation of "Lecoq," a cock. Predicted and described by Mendeleev as ekaaluminum, and discovered spectroscopically by Lecoq de Boisbaudran in 1875, who in the same year obtained the free metal by electrolysis of a solution of the hydroxide in KOH.
Pure gallium is a silvery, lustrous metal that is solid at ordinary room temperature but melts at about 30 °C. The solid is brittle enough to fracture, while the liquid readily wets many surfaces and can penetrate some metals, especially aluminium.
Gallium is used chiefly in compound semiconductors. Gallium arsenide (GaAs) is important in high-frequency electronics, optoelectronics, infrared light-emitting diodes, and some photovoltaic cells. Gallium nitride (GaN) is central to blue and ultraviolet light-emitting diodes, laser diodes, and efficient power electronics. Low-melting gallium alloys are used in thermometers, thermal interfaces, and specialized heat-transfer applications where mercury is undesirable. Radioisotopes such as ⁶⁷Ga and ⁶⁸Ga are used in diagnostic nuclear medicine.
Gallium melts near room temperature and has one of the largest liquid ranges of any metal, so it has found use in high temperature thermometers. Gallium easily forms alloys with most metals and has been used to create low melting alloys. Gallium is used as a doping material for semiconductors and has been used to produce solid-state items like transistors and light emitting diodes. Gallium arsenide (GaAs) can produce laser light directly from electricity. Large amounts of gallium trichloride (GaCl3) have been gathered to build the Gallium Neutrino Observatory, an observatory located in Italy built to study particles called neutrinos which are produced inside the sun during the process of nuclear fusion.
Gallium wets glass or porcelain and forms a brilliant mirror when it is painted on glass. It is widely used in doping semiconductors and producing solid-state devices such as transistors.
Magnesium gallate containing divalent impurities, such as Mn+2, is finding use in commercial ultraviolet-activated powder phosphors. Gallium arsenide is capable of converting electricity directly into coherent light. Gallium readily alloys with most metals, and has been used as a component in low-melting alloys.
Isotopes in Medicine
68Ga (with a half-life of 68 min) is a radioactive isotope that emits positrons, which are used to produce high-resolution imaging with positron emission tomography (PET). Unlike 18F, which is most commonly used, 68Ga is more easily produced using a cost-effective generator with the parent radionuclide 68Ge (with a half-life of 271 days) (Fig. IUPAC.31.1). Once produced, 68Ga easily couples to biomolecules (most commonly peptides) that target G-protein coupled receptors, which are over-expressed on human tumor cells. The labeled protein acts as a radioactive tracer for cancer diagnostics. PET images are often coupled with CT images to get a more complete picture of the body [256] I. Kayani, B. G. Conry, A. M. Groves, T. Win, J. Dickson, M. Caplin, J. B. Bomanji. J. Nucl. Med.50, 1927 (2009)., [257] M. Fani, J. P. André, H. R. Maecke. Contrast Media Mol. Imaging3, 67 (2008)., [258] G. J. Ehrhardt, M. J. Welch. J. Nucl. Med.19, 925 (1978)., [259] G. Ehrhardt, S. Wagner, M. J. Welch. J. Labelled Compd. Radiopharm.16, 111 (1979)., [260] M. V. Cantorias, S. D. Figueroa, T. P. Quinn, J. R. Lever, T. J. Hoffman, L. D. Watkinson, T. L. Carmack, C. S. Cutler. Nucl. Med. Biol.36, 505 (2009)., [261] J. C. Rold, T. L. Sieckman, G. L. Figueroa, S. D. Sublett, S. V. Engelbrecht, H. Cutler, C. S. Jurisson, S. S. Hoffman, T. J. Bottenus, B. N. Garrison. Trans. Am. Nucl. Soc.98, 802 (2008)., [262] J. Fitzsimmons, M. Fassbender, R. Atcher. J. Nucl. Med.48, 319 (2007).. Radiopharmaceutical 67Ga (with a half-life of 78 h) is a gamma-emitting isotope used in scintigraphy for medical imaging [263] S. M. Larson, P. B. Hoffer. “Normal patterns of localization”, in Gallium-67 Imaging, P. B. Hoffer, C. Bekerman, and R. E. Henkin (Eds.), John Wiley, New York (1978)., [264] A. Wirth, J. F. Seymour, R. J. Hicks, R. Ware, R. Fisher, M. Prince, M. P. MacManus, G. Ryan, H. Januszewicz, M. Wolf. Am. J. Med.112, 262 (2002)., [265] A. Vijayananthan, A. V. Arumugam, G. Kumar, D. Harichandra. Int. J. Biomed. Imaging4 (2), e23 (2008)..
Gallium most commonly adopts the +3 oxidation state, although lower-valent gallium chemistry is well established in specialized compounds. Gallium(III) oxide (Ga₂O₃) is a wide-band-gap oxide of growing interest for power and ultraviolet devices. Gallium arsenide (GaAs), gallium nitride (GaN), gallium phosphide (GaP), and gallium antimonide (GaSb) are important III-V semiconductors. Gallium(III) chloride (GaCl₃) is a Lewis acidic halide and forms many adducts. Gallium(III) salts often hydrolyze in water, reflecting the high charge density of Ga³⁺.
See more information at the Gallium compound page.
Compact gallium metal has low acute toxicity, but it can stain skin and damage aluminium parts by liquid-metal embrittlement. Dusts, fumes, and soluble gallium compounds require normal laboratory controls because toxicity depends strongly on compound form and exposure route. Gallium arsenide (GaAs) introduces additional concern from arsenic during machining, heating, or waste handling. Medical radioisotopes present isotope-specific radiation hazards.
Its toxicity appears to be of a low order, but should be handled with care until more data is available.
Gallium occurs at trace levels in many minerals, especially those associated with aluminium and zinc ores. It substitutes for chemically similar ions rather than forming abundant gallium minerals. Weathering and industrial processing can mobilize small amounts, but gallium is not a major nutrient and has no well-established biological role. Environmental concern is usually tied to mining residues, semiconductor waste, and associated elements such as arsenic rather than to metallic gallium alone.
Gallium supply is dominated by by-product recovery, especially from bauxite processing liquors and, to a lesser extent, zinc-processing streams. Because primary ores are not mined for gallium alone, output can be constrained by aluminium and zinc production, refinery technology, and purification capacity. Demand is driven mainly by semiconductor and optoelectronic materials, where high purity is essential. Recycling occurs from manufacturing scrap and some end-of-life material, but dispersed uses and complex devices limit complete recovery. Substitution is application-specific; silicon, silicon carbide, or other III-V compounds can replace gallium materials in some devices but not without design changes.
Gallium is often found as a trace element in diaspore, sphalerite, germanite, bauxite, and coal. Some flue dusts from burning coal have been shown to contain as much 1.5 percent gallium.
Gallium is a relatively rare element in the cosmos compared with lighter metals. Its stable isotopes, ⁶⁹Ga and ⁷¹Ga, are produced in stellar nucleosynthesis pathways involving neutron capture and related processes in evolved stars and supernova environments. In planetary materials it behaves as a moderately volatile, lithophile to chalcophile trace element and is used in geochemical studies of differentiation and volatility.
- Gallium expands on freezing, so solidification can break rigid containers.
- The liquid metal has an unusually wide liquid range before boiling.
- Gallium can diffuse into aluminium and make it crumble under stress.
- Natural gallium consists mainly of two stable isotopes, ⁶⁹Ga and ⁷¹Ga.
- Very high-purity gallium is needed for many semiconductor applications.
चित्र
गुण
भौतिक
- परमाणु त्रिज्या (आनुभविक)
- 130 pm सभी तत्वों की परमाणु त्रिज्या (आनुभविक) की तुलना करें →
- सहसंयोजक त्रिज्या
- 122 pm सभी तत्वों की सहसंयोजक त्रिज्या की तुलना करें →
- वान डर वाल्स त्रिज्या
- 187 pm सभी तत्वों की वान डर वाल्स त्रिज्या की तुलना करें →
- धात्विक त्रिज्या
- 125 pm सभी तत्वों की धात्विक त्रिज्या की तुलना करें →
- घनत्व
- 5910 kg/m³ सभी तत्वों की घनत्व की तुलना करें →
- मोलर आयतन
- 0.0118 L/mol
- STP पर प्रावस्था
- ठोस सभी तत्वों की STP पर प्रावस्था की तुलना करें →
- गलनांक
- 29.76 °C सभी तत्वों की गलनांक की तुलना करें →
- क्वथनांक
- 2203.85 °C सभी तत्वों की क्वथनांक की तुलना करें →
- तापीय चालकता
- 28.1 W/(m·K) सभी तत्वों की तापीय चालकता की तुलना करें →
- विशिष्ट ऊष्मा धारिता
- 0.373 J/(g·K) सभी तत्वों की विशिष्ट ऊष्मा धारिता की तुलना करें →
- मोलर ऊष्मा धारिता
- 26.03 J/(mol·K) सभी तत्वों की मोलर ऊष्मा धारिता की तुलना करें →
- क्रिस्टल संरचना
- विषमलंबाक्ष सभी तत्वों की क्रिस्टल संरचना की तुलना करें →
रासायनिक
- विद्युतऋणात्मकता (पॉलिंग)
- 1.81 सभी तत्वों की विद्युतऋणात्मकता (पॉलिंग) की तुलना करें →
- विद्युतऋणात्मकता (ऐलन)
- 1.756
- इलेक्ट्रॉन बंधुता
- 0.3 eV
- आयनन ऊर्जा (प्रथम)
- 5.999302 eV सभी तत्वों की आयनन ऊर्जा (प्रथम) की तुलना करें →
- आयनन ऊर्जा (द्वितीय)
- 20.515211 eV सभी तत्वों की आयनन ऊर्जा (द्वितीय) की तुलना करें →
- आयनन ऊर्जा (तृतीय)
- 30.725866 eV सभी तत्वों की आयनन ऊर्जा (तृतीय) की तुलना करें →
- आयनन ऊर्जा (चतुर्थ)
- 63.241218 eV सभी तत्वों की आयनन ऊर्जा (चतुर्थ) की तुलना करें →
- आयनन ऊर्जा (पंचम)
- 86.010296 eV सभी तत्वों की आयनन ऊर्जा (पंचम) की तुलना करें →
- ऑक्सीकरण अवस्थाएँ
- −5, −4, −3, −2, −1, 0, +1, +2, +3 सभी तत्वों की ऑक्सीकरण अवस्थाएँ की तुलना करें →
- संयोजकता इलेक्ट्रॉन
- 3 सभी तत्वों की संयोजकता इलेक्ट्रॉन की तुलना करें →
- इलेक्ट्रॉन विन्यास
- [Ar] 4s2 3d10 4p1
ऊष्मागतिक
- त्रिक बिंदु (तापमान)
- 29.7666 °C
- गलन ऊष्मा
- 0.05793647 eV सभी तत्वों की गलन ऊष्मा की तुलना करें →
- वाष्पन ऊष्मा
- 2.653262 eV सभी तत्वों की वाष्पन ऊष्मा की तुलना करें →
- ऊर्ध्वपातन ऊष्मा
- 2.808727 eV
- परमाणुकरण ऊष्मा
- 2.808727 eV
- परमाणुकरण एन्थैल्पी
- 2.818676 eV
नाभिकीय
- प्रोटॉन
- 31 सभी तत्वों की प्रोटॉन की तुलना करें →
- न्यूट्रॉन
- 38 सभी तत्वों की न्यूट्रॉन की तुलना करें →
- ज्ञात समस्थानिक
- 33 सभी तत्वों की ज्ञात समस्थानिक की तुलना करें →
- स्थिर समस्थानिक
- 2 सभी तत्वों की स्थिर समस्थानिक की तुलना करें →
- सबसे स्थिर समस्थानिक
- Ga-69
- खोज का वर्ष
- 1875
प्रचुरता
- प्रचुरता (भूपर्पटी)
- 19 mg/kg सभी तत्वों की प्रचुरता (भूपर्पटी) की तुलना करें →
- प्रचुरता (महासागर)
- 3 × 10−5 mg/L सभी तत्वों की प्रचुरता (महासागर) की तुलना करें →
क्रिस्टल संरचना
- जालक स्थिरांक a
- 451 pm
इलेक्ट्रॉनिक संरचना
- प्रति कोश इलेक्ट्रॉन
- 2, 8, 18, 3 सभी तत्वों की प्रति कोश इलेक्ट्रॉन की तुलना करें →
पहचानकर्ता
- CAS संख्या
- 7440-55-3 सभी तत्वों की CAS संख्या की तुलना करें →
- टर्म प्रतीक
- 2P°1/2
- InChI
- InChI=1S/Ga
- InChI कुंजी
- GYHNNYVSQQEPJS-UHFFFAOYSA-N
इलेक्ट्रॉन विन्यास मापित
Ga: 3d¹⁰ 4s² 4p¹[Ar] 3d¹⁰ 4s² 4p¹1s² 2s² 2p⁶ 3s² 3p⁶ 3d¹⁰ 4s² 4p¹परमाणु मॉडल
समस्थानिक न्यूट्रॉन की संख्या, द्रव्यमान और स्थिरता बदलते हैं — उदासीन परमाणु का इलेक्ट्रॉन विन्यास नहीं।
सांकेतिक परमाणु मॉडल, वास्तविक अनुपात में नहीं।
परमाणु पहचान-चिह्न
उत्सर्जन / अवशोषण स्पेक्ट्रम
समस्थानिक वितरण
| द्रव्यमान संख्या | परमाणु द्रव्यमान (u) | प्राकृतिक प्रचुरता | अर्धायु |
|---|---|---|---|
| 69 स्थिर | 68.9255735 ± 0.0000013 | 60.1080% | स्थिर |
| 71 स्थिर | 70.92470258 ± 0.00000087 | 39.8920% | स्थिर |
प्रावस्था / अवस्था
कारण: गलनांक (29.76 °C) से 4.8 °C कम
सांकेतिक, वास्तविक अनुपात में नहीं
प्रावस्था संक्रमण बिंदु
संक्रमण ऊर्जाएँ
गलनांक पर 1 mol को पिघलाने के लिए आवश्यक ऊर्जा
क्वथनांक पर 1 mol को वाष्पित करने के लिए आवश्यक ऊर्जा
ऊर्ध्वपातनांक पर 1 mol के ऊर्ध्वपातन के लिए आवश्यक ऊर्जा
घनत्व
मानक परिस्थितियों में
मानक परिस्थितियों में
उन्नत
परमाणु स्पेक्ट्रम
31 में से 10 दिखाए जा रहे हैं। आयन के आवेश के अनुसार आरोही क्रम में व्यवस्थित।
उपलब्ध स्पेक्ट्रमी रेखा डेटा ?
| आयन | आवेश | कुल रेखाएँ | संक्रमण प्रायिकताएँ | स्तर पदनाम |
|---|---|---|---|---|
| Ga I | 0 | 342 | 23 | 342 |
| Ga II | +1 | 176 | 10 | 176 |
| Ga III | +2 | 113 | 2 | 113 |
| Ga IV | +3 | 594 | 0 | 594 |
| Ga V | +4 | 185 | 0 | 185 |
| Ga VI | +5 | 501 | 0 | 501 |
| Ga VII | +6 | 451 | 0 | 451 |
उपलब्ध ऊर्जा स्तर डेटा ?
| आयन | आवेश | स्तर |
|---|---|---|
| Ga I | 0 | 262 |
| Ga II | +1 | 96 |
| Ga III | +2 | 61 |
| Ga IV | +3 | 192 |
| Ga V | +4 | 92 |
| Ga VI | +5 | 158 |
| Ga VII | +6 | 181 |
| Ga VIII | +7 | 2 |
| Ga IX | +8 | 2 |
| Ga X | +9 | 2 |
आयनिक त्रिज्याएँ
| आवेश | उपसहसंयोजन | प्रचक्रण | त्रिज्या |
|---|---|---|---|
| +3 | 4 | उपलब्ध नहीं | 47 pm |
| +3 | 5 | उपलब्ध नहीं | 55.00000000000001 pm |
| +3 | 6 | उपलब्ध नहीं | 62 pm |
यौगिक
समस्थानिक (2)
| द्रव्यमान संख्या | परमाणु द्रव्यमान (u) | प्राकृतिक प्रचुरता | अर्धायु | क्षय का प्रकार | |
|---|---|---|---|---|---|
| 69 स्थिर | 68.9255735 ± 0.0000013 | 60.1080% ± 0.0090% | स्थिर | stable | |
| 71 स्थिर | 70.92470258 ± 0.00000087 | 39.8920% ± 0.0090% | स्थिर | stable |
स्पेक्ट्रमी रेखाएँ
| तरंगदैर्घ्य (nm) | तीव्रता | आयनन अवस्था | प्रकार | संक्रमण | सटीकता | स्रोत | |
|---|---|---|---|---|---|---|---|
| 417.33 nm | उपलब्ध नहीं | ID 486 | emission | 3s2.3p3 2P* → 3s2.3p3 2P* | मापित | NIST | |
| 424.0525 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.70p 2P* | मापित | NIST | |
| 424.0525 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.70p 2P* | मापित | NIST | |
| 424.0651 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.69p 2P* | मापित | NIST | |
| 424.0651 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.69p 2P* | मापित | NIST | |
| 424.08 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.68p 2P* | मापित | NIST | |
| 424.08 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.68p 2P* | मापित | NIST | |
| 424.0924 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.67p 2P* | मापित | NIST | |
| 424.0924 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.67p 2P* | मापित | NIST | |
| 424.1098 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.66p 2P* | मापित | NIST | |
| 424.1098 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.66p 2P* | मापित | NIST | |
| 424.1257 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.65p 2P* | मापित | NIST | |
| 424.1257 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.65p 2P* | मापित | NIST | |
| 424.1406 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.64p 2P* | मापित | NIST | |
| 424.1406 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.64p 2P* | मापित | NIST | |
| 424.1588 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.63p 2P* | मापित | NIST | |
| 424.1588 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.63p 2P* | मापित | NIST | |
| 424.1761 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.62p 2P* | मापित | NIST | |
| 424.1761 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.62p 2P* | मापित | NIST | |
| 424.1948 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.61p 2P* | मापित | NIST | |
| 424.1948 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.61p 2P* | मापित | NIST | |
| 424.2157 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.60p 2P* | मापित | NIST | |
| 424.2157 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.60p 2P* | मापित | NIST | |
| 424.2367 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.59p 2P* | मापित | NIST | |
| 424.2367 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.59p 2P* | मापित | NIST | |
| 424.2582 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.58p 2P* | मापित | NIST | |
| 424.2582 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.58p 2P* | मापित | NIST | |
| 424.2826 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.57p 2P* | मापित | NIST | |
| 424.2826 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.57p 2P* | मापित | NIST | |
| 424.3887 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.53p 2P* | मापित | NIST | |
| 424.3887 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.53p 2P* | मापित | NIST | |
| 424.4204 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.52p 2P* | मापित | NIST | |
| 424.4204 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.52p 2P* | मापित | NIST | |
| 424.4531 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.51p 2P* | मापित | NIST | |
| 424.4531 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.51p 2P* | मापित | NIST | |
| 424.4886 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.50p 2P* | मापित | NIST | |
| 424.4886 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.50p 2P* | मापित | NIST | |
| 424.5261 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.49p 2P* | मापित | NIST | |
| 424.5261 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.49p 2P* | मापित | NIST | |
| 424.5675 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.48p 2P* | मापित | NIST | |
| 424.5675 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.48p 2P* | मापित | NIST | |
| 424.6112 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.47p 2P* | मापित | NIST | |
| 424.6112 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.47p 2P* | मापित | NIST | |
| 424.6563 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.46p 2P* | मापित | NIST | |
| 424.6563 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.46p 2P* | मापित | NIST | |
| 424.7046 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.45p 2P* | मापित | NIST | |
| 424.7046 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.45p 2P* | मापित | NIST | |
| 424.7569 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.44p 2P* | मापित | NIST | |
| 424.7569 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.44p 2P* | मापित | NIST | |
| 424.8143 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.43p 2P* | मापित | NIST | |
| 424.8143 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.43p 2P* | मापित | NIST | |
| 424.8743 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.42p 2P* | मापित | NIST | |
| 424.8743 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.42p 2P* | मापित | NIST | |
| 424.94 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.41p 2P* | मापित | NIST | |
| 424.94 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.41p 2P* | मापित | NIST | |
| 425.4789 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.34d 2D | मापित | NIST | |
| 425.4799 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.34d 2D | मापित | NIST | |
| 426.035 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.30d 2D | मापित | NIST | |
| 426.0365 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.30d 2D | मापित | NIST | |
| 426.6348 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.27d 2D | मापित | NIST | |
| 426.6367 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.27d 2D | मापित | NIST | |
| 427.1688 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.25d 2D | मापित | NIST | |
| 427.1712 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.25d 2D | मापित | NIST | |
| 427.8589 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.23d 2D | मापित | NIST | |
| 427.8621 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.23d 2D | मापित | NIST | |
| 428.7731 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.21d 2D | मापित | NIST | |
| 428.7774 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.21d 2D | मापित | NIST | |
| 429.3459 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.20d 2D | मापित | NIST | |
| 429.3507 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.20d 2D | मापित | NIST | |
| 430.0203 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.19d 2D | मापित | NIST | |
| 430.026 nm | उपलब्ध नहीं | Ga I | emission | 4s2.5s 2S → 4s2.19d 2D | मापित | NIST | |
| 448.84 nm | उपलब्ध नहीं | ID 505 | emission | 5p 2P* → 5d 2D | मापित | NIST | |
| 459.16 nm | उपलब्ध नहीं | ID 505 | emission | 5s 2S → 5p 2P* | मापित | NIST | |
| 557 nm | उपलब्ध नहीं | ID 482 | emission | 1s.5s 3S → 1s.5p 3P* | मापित | NIST | |
| 567.7 nm | उपलब्ध नहीं | ID 498 | emission | 3s2.3p2 3P → 3s2.3p2 3P | मापित | NIST | |
| 587 nm | उपलब्ध नहीं | ID 482 | emission | 1s.4p 3P* → 1s.4d 3D | मापित | NIST | |
| 675 nm | उपलब्ध नहीं | ID 486 | emission | 3s2.3p3 2D* → 3s2.3p3 2D* | मापित | NIST | |
| 706.7 nm | उपलब्ध नहीं | ID 505 | emission | 4p 2P* → 4d 2D | मापित | NIST |
विस्तृत गुण
सहसंयोजक त्रिज्याएँ (विस्तृत)
- सहसंयोजक त्रिज्या (प्यूक्को)
- 124 pm
- सहसंयोजक त्रिज्या (प्यूक्को, द्विबंध)
- 117 pm
- सहसंयोजक त्रिज्या (प्यूक्को, त्रिबंध)
- 121 pm
वान डर वाल्स त्रिज्याएँ
- Bondi
- 187 pm
- Batsanov
- 210 pm
- Alvarez
- 232 pm
- UFF
- 438.3 pm
- MM3
- 246 pm
- Dreiding
- 439 pm
परमाणु और धात्विक त्रिज्याएँ
- परमाणु त्रिज्या (राह्म)
- 233 pm
- धात्विक त्रिज्या (C12)
- 140 pm
संख्यांकन मापक्रम
- Mendeleev
- 83
- Pettifor
- 81
- Glawe
- 79
विद्युतऋणात्मकता मापक्रम
- Ghosh
- 0
- Miedema
- 4
- Gunnarsson–Lundqvist
- 3
- Robles–Bartolotti
- 3
ध्रुवणीयता और परिक्षेपण
- द्विध्रुव ध्रुवणीयता
- 50 a.u.
- द्विध्रुव ध्रुवणीयता (अनिश्चितता)
- 3 a.u.
- C₆
- 498 Ha·Bohr6
- C₆ (Gould–Bučko)
- 456 Ha·Bohr6
मीडेमा प्राचल
- मीडेमा मोलर आयतन
- 11.82 cm3/mol
- मीडेमा इलेक्ट्रॉन घनत्व
- 2
आपूर्ति जोखिम और अर्थशास्त्र
- उत्पादन संकेंद्रण
- 54
- सापेक्ष आपूर्ति जोखिम
- 8
- राजनीतिक स्थिरता (प्रमुख उत्पादक)
- 24
प्रावस्था संक्रमण और अपररूप
| गलनांक | 302.91 K |
| क्वथनांक | 2502.15 K |
| त्रिक बिंदु (तापमान) | 302.92 K |
ऑक्सीकरण अवस्था की श्रेणियाँ
उन्नत संदर्भ डेटा
परिरक्षण स्थिरांक (8)
| n | कक्षक | σ |
|---|---|---|
| 1 | s | 0.6906 |
| 2 | p | 3.9092 |
| 2 | s | 8.401 |
| 3 | d | 15.9067 |
| 3 | p | 14.7964 |
| 3 | s | 14.0038 |
| 4 | p | 24.7784 |
| 4 | s | 23.9332 |
क्रिस्टल त्रिज्याओं का विवरण (3)
| आवेश | CN | प्रचक्रण | rcrystal (pm) | उत्पत्ति |
|---|---|---|---|---|
| 3 | IV | 61 | ||
| 3 | V | 69 | ||
| 3 | VI | 76 | from r^3 vs V plots, |
समस्थानिक क्षय के प्रकार (51)
| समस्थानिक | मोड | तीव्रता |
|---|---|---|
| 56 | p | — |
| 57 | p | — |
| 58 | p | — |
| 59 | p | — |
| 60 | B+ | 100% |
| 60 | B+p | 1.6% |
| 60 | B+A | 0% |
| 61 | B+ | 100% |
| 61 | B+p | 0.3% |
| 62 | B+ | 100% |
एक्स-रे प्रकीर्णन गुणक (506)
| ऊर्जा (eV) | f₁ | f₂ |
|---|---|---|
| 10 | — | 2.98527 |
| 10.1617 | — | 2.98141 |
| 10.3261 | — | 2.97756 |
| 10.4931 | — | 2.9737 |
| 10.6628 | — | 2.96986 |
| 10.8353 | — | 2.96602 |
| 11.0106 | — | 2.95695 |
| 11.1886 | — | 2.90859 |
| 11.3696 | — | 2.86103 |
| 11.5535 | — | 2.81425 |
अतिरिक्त डेटा
Estimated Crustal Abundance
The estimated element abundance in the earth's crust.
1.9×101 milligrams per kilogram
संदर्भ (1)
Estimated Oceanic Abundance
The estimated element abundance in the earth's oceans.
3×10-5 milligrams per liter
संदर्भ (1)
Sources
Sources of this element.
Gallium is often found as a trace element in diaspore, sphalerite, germanite, bauxite, and coal. Some flue dusts from burning coal have been shown to contain as much 1.5 percent gallium.
संदर्भ (1)
- [6] Gallium https://periodic.lanl.gov/31.shtml
संदर्भ
(9)
Data deposited in or computed by PubChem
The half-life and atomic mass data was provided by the Atomic Mass Data Center at the International Atomic Energy Agency.
Element data are cited from the Atomic weights of the elements (an IUPAC Technical Report). The IUPAC periodic table of elements can be found at https://iupac.org/what-we-do/periodic-table-of-elements/. Additional information can be found within IUPAC publication doi:10.1515/pac-2015-0703 Copyright © 2020 International Union of Pure and Applied Chemistry.
The information are cited from Pure Appl. Chem. 2018; 90(12): 1833-2092, https://doi.org/10.1515/pac-2015-0703.
Thomas Jefferson National Accelerator Facility (Jefferson Lab) is one of 17 national laboratories funded by the U.S. Department of Energy. The lab's primary mission is to conduct basic research of the atom's nucleus using the lab's unique particle accelerator, known as the Continuous Electron Beam Accelerator Facility (CEBAF). For more information visit https://www.jlab.org/
The periodic table at the LANL (Los Alamos National Laboratory) contains basic element information together with the history, source, properties, use, handling and more. The provenance data may be found from the link under the source name.
The periodic table contains NIST's critically-evaluated data on atomic properties of the elements. The provenance data that include data for atomic spectroscopy, X-ray and gamma ray, radiation dosimetry, nuclear physics, and condensed matter physics may be found from the link under the source name. Ref: https://www.nist.gov/pml/atomic-spectra-database
This section provides all form of data related to element Gallium.
The element property data was retrieved from publications.