Germanium (Ge)
metalloidSolid
मानक परमाणु भार
72.63 uइलेक्ट्रॉन विन्यास
[Ar] 4s2 3d10 4p2गलनांक
938.25 °Cक्वथनांक
2832.85 °Cघनत्व
5323.4 kg/m³ऑक्सीकरण अवस्थाएँ
−4, −3, −2, −1, 0, +1, +2, +3, +4विद्युतऋणात्मकता (पॉलिंग)
2.01आयनन ऊर्जा (प्रथम)
7.899435 eVखोज का वर्ष
1886परमाणु त्रिज्या
125 pmविवरण
Germanium is a hard, brittle metalloid in group 14, chemically intermediate between silicon and tin. It is a covalent semiconductor with a narrow band gap and forms stable compounds mainly in the +4 and +2 oxidation states. The element is not mined as a principal ore in most operations; it is commonly recovered as a by-product from zinc processing and from some coal-derived materials. Its technological importance rests on infrared optics, fiber-optic materials, semiconductor devices, and specialty catalysts.
The element is a gray-white metalloid. In pure state, the element is crystalline and brittle, retaining its luster in air at room temperature. It is a very important semiconductor. Zone-refining techniques have led to production of crystalline germanium for semiconductor use with an impurity of only one part in 1010.
The name derives from the Latin germania for Germany. It was discovered and isolated by the German chemist Clemens-Alexander Winkler in 1886 in the mineral argyrodite (GeS2×4Ag2S).
First proposed to exist by Dmitri Mendeleyev in 1871 based on gaps in his newly created Periodic Table of Elements, germanium was discovered by the German chemist Clemens Winkler in the mineral argyrodite (Ag8GeS6) in 1886. Today, germanium is primarily obtained from the smelting of zinc ores and from the byproducts of burning certain types of coal.
From the Latin word Germania, Germany. Mendeleev predicted the existence of Germanium in 1871 as ekasilicon, and the element was discovered by Winkler in 1886.
Pure germanium is a lustrous, grayish-white solid with a metallic sheen. It crystallizes in the diamond-cubic structure and is brittle rather than malleable. High-purity material is commonly encountered as polycrystalline pieces, single-crystal ingots, or wafers for electronic and optical use.
Germanium is used where its optical and electronic properties are valuable rather than as a structural metal. Germanium dioxide, GeO₂, is added to silica glass for optical fibers because it raises refractive index. Elemental germanium and germanium-containing glasses are used in infrared lenses, windows, and thermal imaging optics. Germanium substrates support some high-efficiency multijunction solar cells. Small amounts are used in semiconductor detectors, legacy transistors, and SiGe alloys for high-speed electronics. Certain organogermanium and oxide materials have specialized roles, but broad medical uses are not established.
The largest use of germanium is in the semiconductor industry. When doped with small amounts of arsenic, gallium, indium, antimony or phosphorus, germanium is used to make transistors for use in electronic devices. Germanium is also used to create alloys and as a phosphor in fluorescent lamps. Both germanium and germanium oxide (GeO) are transparent to infrared radiation and are used in infrared optical instruments and infrared detectors. Some germanium compounds seem to be effective in killing some types of bacteria and are currently being studied for use in chemotherapy.
When germanium is doped with arsenic, gallium, or other elements, it is used as a transistor element in thousands of electronic applications. The most common use of germanium is as a semiconductor. Germanium is also finding many other applications including use as an alloying agent, as a phosphor in fluorescent lamps, and as a catalyst.
Germanium and germanium oxide are transparent to the infrared and are used in infrared spectroscopes and other optical equipment, including extremely sensitive infrared detectors.
The high index of refraction and dispersion properties of its oxide's have made germanium useful as a component of wide-angle camera lenses and microscope objectives.
The field of organo-germanium chemistry is becoming increasingly important. Certain germanium compounds have a low mammalian toxicity, but a marked activity against certain bacteria, which makes them useful as chemotherapeutic agents.
Isotopes in Earth/Planetary Science
Because molecules, atoms, and ions of the stable isotopes of germanium possess slightly different physical and chemical properties, they commonly will be fractionated during physical, chemical, and biological processes, giving rise to variations in isotopic abundances and in atomic weights. There are measureable variations in the isotopic abundances of germanium in terrestrial materials (Fig. IUPAC.32.1).
Isotopes in Medicine
68Ge is used to calibrate positron emission tomography (PET) scanners, which have been used for medical diagnostic procedures [268] Office of Science, Los Alamos National Laboratory. Isotope Production and Applications, Los Alamos National Laboratory (2017), Feb. 26; http://www.lanl.gov/science-innovation/science-programs/office-of-science-programs/nuclear-physics/isotopes/_assets/docs/isotope-program-brochure.pdf..
Isotopes Used as a Source of Radioactive Isotope(s)
72Ge and 74Ge are used to produce the radioactive isotopes 72As and 74As, with half-lives of 26 h and 17.8 days, respectively. The arsenic nuclei can attach to tumors and the decay of these isotopes is used to image the location of cancerous tumors in vivovia the 72Ge (n, p) 72As reaction and the 74Ge (n, p) 74As reaction [269] M. Jennewein, M. A. Lewis, D. Zhao, E. Tsyganov, N. Slavine, J. He, L. Watkins, V. D. Kodibagkar, S. O’Kelly, P. Kulkarni, P. P. Antich, A. Hermanne, F. Rösch, R. P. Mason, P. E. Thorpe. Clin. Cancer Res.14, 1377 (2008).. 70Ge, 72Ge, and 74Ge have all been used to produce the medical radioisotope 73Se via the 70Ge (4He, n) 73Se reaction, via the 72Ge (4He, 3n) 73Se reaction and via the reaction 74Ge (4He, 5n) 73Se, respectively [269] M. Jennewein, M. A. Lewis, D. Zhao, E. Tsyganov, N. Slavine, J. He, L. Watkins, V. D. Kodibagkar, S. O’Kelly, P. Kulkarni, P. P. Antich, A. Hermanne, F. Rösch, R. P. Mason, P. E. Thorpe. Clin. Cancer Res.14, 1377 (2008)..
Germanium chemistry resembles a heavier analogue of silicon chemistry, with notable stability of both +4 and +2 compounds. Germanium dioxide, GeO₂, is the principal oxide and occurs in quartz-like and rutile-like forms. Germanium tetrachloride, GeCl₄, is a volatile liquid used as an intermediate in purification and glass manufacture. Germanium monosulfide, GeS, and germanium disulfide, GeS₂, illustrate lower and higher oxidation-state chalcogenides. Germanes such as germane, GeH₄, are reactive hydrides used in deposition chemistry. Organogermanium compounds contain Ge–C bonds, but their chemistry is less commercially extensive than organosilicon chemistry.
See more information at the Germanium compound page.
Massive germanium metal is of low acute toxicity and is not considered a nutritional requirement for humans. Dusts and finely divided material can irritate the respiratory tract and should be controlled in industrial handling. Germane, GeH₄, is highly flammable and toxic, posing a significant gas-handling hazard. Germanium tetrachloride, GeCl₄, fumes in moist air and can form corrosive hydrogen chloride, HCl. Some soluble germanium compounds have caused kidney and nerve toxicity when ingested in inappropriate supplement use.
Germanium is a dispersed trace element in the crust and is enriched in some zinc ores, lignites, and coal ashes. In natural waters it commonly follows silica behavior because dissolved germanium species can resemble silicic acid in geochemical cycling. Weathering releases only small concentrations, and the element has no known essential biological function. Industrial releases are usually associated with mining, smelting, coal combustion residues, and processing of germanium-bearing intermediates.
Germanium supply is tied to by-product recovery, so availability depends strongly on zinc refining, processing of certain coal ashes, and the economics of collecting dilute streams. Concentrates are converted through intermediates such as germanium tetrachloride, GeCl₄, then hydrolyzed and reduced to high-purity metal or oxide. Demand is concentrated in fiber optics, infrared optics, polymerization catalysts, electronics, and space solar cells. Recycling from optical scrap, semiconductor material, and some catalysts is important because primary sources are geographically and geologically limited. Substitution is possible in some optical and electronic uses, but often with performance or design penalties.
The metal is found in
▸ argyrodite, a sulfide of germanium and silver;
▸ germanite, which contains 8 percent of the element;
▸ zinc ores;
▸ coal; and
▸ other minerals
The element is commercially obtained from the dust from smelters that process zinc ores. It is also recovered from combustion by-products of certain coals.
Germanium can be separated from other metals by fractional distillation of its volatile tetrachloride. These techniques permit the production of germanium of ultra-high purity.
Germanium is a minor cosmic element produced mainly by neutron-capture processes in evolved stars and supernova-related environments, with contributions from charged-particle reactions. It is far less abundant than silicon because heavier nuclei beyond iron-region seed patterns require less common nucleosynthetic pathways. In meteorites and planetary rocks it behaves partly as a moderately siderophile and chalcophile trace element, partitioning into metal and sulfide phases under suitable conditions.
- Germanium was predicted by Mendeleev as eka-silicon before it was isolated.
- Zone refining of germanium helped establish ultra-high-purity semiconductor practice.
- Germanium expands on freezing, as silicon and water do.
- Natural germanium contains five stable isotopes.
- GeO₂ can be reduced to the element with hydrogen in industrial purification.
चित्र
गुण
भौतिक
- परमाणु त्रिज्या (आनुभविक)
- 125 pm सभी तत्वों की परमाणु त्रिज्या (आनुभविक) की तुलना करें →
- सहसंयोजक त्रिज्या
- 120 pm सभी तत्वों की सहसंयोजक त्रिज्या की तुलना करें →
- वान डर वाल्स त्रिज्या
- 211 pm सभी तत्वों की वान डर वाल्स त्रिज्या की तुलना करें →
- धात्विक त्रिज्या
- 124 pm सभी तत्वों की धात्विक त्रिज्या की तुलना करें →
- घनत्व
- 5323.4 kg/m³ सभी तत्वों की घनत्व की तुलना करें →
- मोलर आयतन
- 0.0136 L/mol
- STP पर प्रावस्था
- ठोस सभी तत्वों की STP पर प्रावस्था की तुलना करें →
- गलनांक
- 938.25 °C सभी तत्वों की गलनांक की तुलना करें →
- क्वथनांक
- 2832.85 °C सभी तत्वों की क्वथनांक की तुलना करें →
- तापीय चालकता
- 60.2 W/(m·K) सभी तत्वों की तापीय चालकता की तुलना करें →
- विशिष्ट ऊष्मा धारिता
- 0.32 J/(g·K) सभी तत्वों की विशिष्ट ऊष्मा धारिता की तुलना करें →
- मोलर ऊष्मा धारिता
- 23.222 J/(mol·K) सभी तत्वों की मोलर ऊष्मा धारिता की तुलना करें →
- क्रिस्टल संरचना
- हीरा घनीय सभी तत्वों की क्रिस्टल संरचना की तुलना करें →
रासायनिक
- विद्युतऋणात्मकता (पॉलिंग)
- 2.01 सभी तत्वों की विद्युतऋणात्मकता (पॉलिंग) की तुलना करें →
- विद्युतऋणात्मकता (ऐलन)
- 1.994
- इलेक्ट्रॉन बंधुता
- 1.232 eV
- आयनन ऊर्जा (प्रथम)
- 7.899435 eV सभी तत्वों की आयनन ऊर्जा (प्रथम) की तुलना करें →
- आयनन ऊर्जा (द्वितीय)
- 15.934665 eV सभी तत्वों की आयनन ऊर्जा (द्वितीय) की तुलना करें →
- आयनन ऊर्जा (तृतीय)
- 34.057717 eV सभी तत्वों की आयनन ऊर्जा (तृतीय) की तुलना करें →
- आयनन ऊर्जा (चतुर्थ)
- 45.715657 eV सभी तत्वों की आयनन ऊर्जा (चतुर्थ) की तुलना करें →
- आयनन ऊर्जा (पंचम)
- 90.500312 eV सभी तत्वों की आयनन ऊर्जा (पंचम) की तुलना करें →
- ऑक्सीकरण अवस्थाएँ
- −4, −3, −2, −1, 0, +1, +2, +3, +4 सभी तत्वों की ऑक्सीकरण अवस्थाएँ की तुलना करें →
- संयोजकता इलेक्ट्रॉन
- 4 सभी तत्वों की संयोजकता इलेक्ट्रॉन की तुलना करें →
- इलेक्ट्रॉन विन्यास
- [Ar] 4s2 3d10 4p2
ऊष्मागतिक
- क्रांतिक बिंदु (तापमान)
- 9529 °C
- गलन ऊष्मा
- 0.38285744 eV सभी तत्वों की गलन ऊष्मा की तुलना करें →
- वाष्पन ऊष्मा
- 3.420221 eV सभी तत्वों की वाष्पन ऊष्मा की तुलना करें →
- ऊर्ध्वपातन ऊष्मा
- 3.907343 eV
- परमाणुकरण ऊष्मा
- 3.907343 eV
- परमाणुकरण एन्थैल्पी
- 3.855522 eV
नाभिकीय
- प्रोटॉन
- 32 सभी तत्वों की प्रोटॉन की तुलना करें →
- न्यूट्रॉन
- 42 सभी तत्वों की न्यूट्रॉन की तुलना करें →
- ज्ञात समस्थानिक
- 33 सभी तत्वों की ज्ञात समस्थानिक की तुलना करें →
- स्थिर समस्थानिक
- 4 सभी तत्वों की स्थिर समस्थानिक की तुलना करें →
- सबसे स्थिर समस्थानिक
- Ge-74
- खोज का वर्ष
- 1886
प्रचुरता
- प्रचुरता (भूपर्पटी)
- 1.5 mg/kg सभी तत्वों की प्रचुरता (भूपर्पटी) की तुलना करें →
- प्रचुरता (महासागर)
- 5 × 10−5 mg/L सभी तत्वों की प्रचुरता (महासागर) की तुलना करें →
क्रिस्टल संरचना
- जालक स्थिरांक a
- 566 pm
इलेक्ट्रॉनिक संरचना
- प्रति कोश इलेक्ट्रॉन
- 2, 8, 18, 4 सभी तत्वों की प्रति कोश इलेक्ट्रॉन की तुलना करें →
पहचानकर्ता
- CAS संख्या
- 7440-56-4 सभी तत्वों की CAS संख्या की तुलना करें →
- टर्म प्रतीक
- 3P0
- InChI
- InChI=1S/Ge
- InChI कुंजी
- GNPVGFCGXDBREM-UHFFFAOYSA-N
इलेक्ट्रॉन विन्यास मापित
Ge: 3d¹⁰ 4s² 4p²[Ar] 3d¹⁰ 4s² 4p²1s² 2s² 2p⁶ 3s² 3p⁶ 3d¹⁰ 4s² 4p²परमाणु मॉडल
समस्थानिक न्यूट्रॉन की संख्या, द्रव्यमान और स्थिरता बदलते हैं — उदासीन परमाणु का इलेक्ट्रॉन विन्यास नहीं।
सांकेतिक परमाणु मॉडल, वास्तविक अनुपात में नहीं।
परमाणु पहचान-चिह्न
उत्सर्जन / अवशोषण स्पेक्ट्रम
समस्थानिक वितरण
| द्रव्यमान संख्या | परमाणु द्रव्यमान (u) | प्राकृतिक प्रचुरता | अर्धायु |
|---|---|---|---|
| 70 स्थिर | 69.92424875 ± 0.0000009 | 20.5700% | स्थिर |
| 72 स्थिर | 71.922075826 ± 0.000000081 | 27.4500% | स्थिर |
| 73 स्थिर | 72.923458956 ± 0.000000061 | 7.7500% | स्थिर |
| 74 स्थिर | 73.921177761 ± 0.000000013 | 36.5000% | स्थिर |
प्रावस्था / अवस्था
कारण: गलनांक (938.25 °C) से 913.3 °C कम
सांकेतिक, वास्तविक अनुपात में नहीं
प्रावस्था संक्रमण बिंदु
संक्रमण ऊर्जाएँ
गलनांक पर 1 mol को पिघलाने के लिए आवश्यक ऊर्जा
क्वथनांक पर 1 mol को वाष्पित करने के लिए आवश्यक ऊर्जा
ऊर्ध्वपातनांक पर 1 mol के ऊर्ध्वपातन के लिए आवश्यक ऊर्जा
घनत्व
मानक परिस्थितियों में
मानक परिस्थितियों में
उन्नत
परमाणु स्पेक्ट्रम
32 में से 10 दिखाए जा रहे हैं। आयन के आवेश के अनुसार आरोही क्रम में व्यवस्थित।
उपलब्ध स्पेक्ट्रमी रेखा डेटा ?
| आयन | आवेश | कुल रेखाएँ | संक्रमण प्रायिकताएँ | स्तर पदनाम |
|---|---|---|---|---|
| Ge I | 0 | 224 | 26 | 223 |
| Ge II | +1 | 149 | 20 | 149 |
| Ge III | +2 | 55 | 0 | 0 |
| Ge IV | +3 | 27 | 0 | 0 |
| Ge V | +4 | 37 | 0 | 0 |
उपलब्ध ऊर्जा स्तर डेटा ?
| आयन | आवेश | स्तर |
|---|---|---|
| Ge I | 0 | 621 |
| Ge II | +1 | 129 |
| Ge III | +2 | 48 |
| Ge IV | +3 | 55 |
| Ge V | +4 | 102 |
| Ge VI | +5 | 105 |
| Ge VII | +6 | 168 |
| Ge VIII | +7 | 2 |
| Ge IX | +8 | 2 |
| Ge X | +9 | 2 |
आयनिक त्रिज्याएँ
| आवेश | उपसहसंयोजन | प्रचक्रण | त्रिज्या |
|---|---|---|---|
| +2 | 6 | उपलब्ध नहीं | 73 pm |
| +4 | 4 | उपलब्ध नहीं | 39 pm |
| +4 | 6 | उपलब्ध नहीं | 53 pm |
यौगिक
समस्थानिक (4)
| द्रव्यमान संख्या | परमाणु द्रव्यमान (u) | प्राकृतिक प्रचुरता | अर्धायु | क्षय का प्रकार | |
|---|---|---|---|---|---|
| 70 स्थिर | 69.92424875 ± 0.0000009 | 20.5700% ± 0.2700% | स्थिर | stable | |
| 72 स्थिर | 71.922075826 ± 0.000000081 | 27.4500% ± 0.3200% | स्थिर | stable | |
| 73 स्थिर | 72.923458956 ± 0.000000061 | 7.7500% ± 0.1200% | स्थिर | stable | |
| 74 स्थिर | 73.921177761 ± 0.000000013 | 36.5000% ± 0.2000% | स्थिर | stable |
स्पेक्ट्रमी रेखाएँ
57 में से 50 दिखाए जा रहे हैं। डिफ़ॉल्ट रूप से केवल मापित तीव्रता वाली स्पेक्ट्रमी रेखाएँ दिखाई जाती हैं।
| तरंगदैर्घ्य (nm) | तीव्रता | आयनन अवस्था | प्रकार | संक्रमण | सटीकता | स्रोत | |
|---|---|---|---|---|---|---|---|
| 474.18054 nm | 1000 | Ge II | emission | 4s2.5p 2P* → 4s2.5d 2D | मापित | NIST | |
| 481.46084 nm | 1000 | Ge II | emission | 4s2.5p 2P* → 4s2.5d 2D | मापित | NIST | |
| 589.33885 nm | 1000 | Ge II | emission | 4s2.5s 2S → 4s2.5p 2P* | मापित | NIST | |
| 602.10412 nm | 500 | Ge II | emission | 4s2.5s 2S → 4s2.5p 2P* | मापित | NIST | |
| 517.86474 nm | 200 | Ge II | emission | 4s2.4d 2D → 4s2.4f 2F* | मापित | NIST | |
| 607.834 nm | 150 | Ge II | emission | 4s.4p.(3P*).5s 4P* → 4s.4p.(3P*).5p 4D | मापित | NIST | |
| 626.8068 nm | 150 | Ge II | emission | 4s2.4f 2F* → 4s2.6g 2G | मापित | NIST | |
| 513.17516 nm | 100 | Ge II | emission | 4s2.4d 2D → 4s2.4f 2F* | मापित | NIST | |
| 626.8341 nm | 100 | Ge II | emission | 4s2.4f 2F* → 4s2.6g 2G | मापित | NIST | |
| 633.63765 nm | 100 | Ge II | emission | 4s2.5p 2P* → 4s2.6s 2S | मापित | NIST | |
| 648.41813 nm | 100 | Ge II | emission | 4s2.5p 2P* → 4s2.6s 2S | मापित | NIST | |
| 628.34518 nm | 75 | Ge II | emission | 4s2.5d 2D → 4s2.6f 2F* | मापित | NIST | |
| 422.656259 nm | 70 | Ge I | emission | 4s2.4p2 1S → 4s2.4p.5s 1P* | मापित | NIST | |
| 482.40972 nm | 50 | Ge II | emission | 4s2.5p 2P* → 4s2.5d 2D | मापित | NIST | |
| 626.7136 nm | 50 | Ge II | emission | 4s2.5d 2D → 4s2.6f 2F* | मापित | NIST | |
| 678.0486 nm | 50 | Ge II | emission | 4s2.6p 2P* → 4s2.7d 2D | मापित | NIST | |
| 704.93692 nm | 50 | Ge II | emission | 4s.4p2 2D → 4s2.5p 2P* | मापित | NIST | |
| 384.50994 nm | 30 | Ge II | emission | 4s.4p2 4P → 4s2.5p 2P* | मापित | NIST | |
| 714.53898 nm | 30 | Ge II | emission | 4s.4p2 2D → 4s2.5p 2P* | मापित | NIST | |
| 494.12769 nm | 20 | Ge II | emission | 4s2.4d 2D → 4s2.6p 2P* | मापित | NIST | |
| 520.56488 nm | 20 | Ge II | emission | 4s2.4f 2F* → 4s2.7g 2G | मापित | NIST | |
| 696.63205 nm | 20 | Ge II | emission | 4s.4p2 2D → 4s2.5p 2P* | मापित | NIST | |
| 439.1656 nm | 15 | Ge II | emission | 4s2.4f 2F* → 4s2.9g 2G | मापित | NIST | |
| 520.58372 nm | 15 | Ge II | emission | 4s2.4f 2F* → 4s2.7g 2G | मापित | NIST | |
| 552.2987 nm | 15 | Ge II | emission | 4s2.6p 2P* → 4s2.8d 2D | मापित | NIST | |
| 439.179 nm | 10 | Ge II | emission | 4s2.4f 2F* → 4s2.9g 2G | मापित | NIST | |
| 466.2311 nm | 10 | Ge II | emission | 4s2.5d 2D → 4s2.8f 2F* | मापित | NIST | |
| 468.582849 nm | 10 | Ge I | emission | 4s2.4p2 1S → 4s2.4p.5s 3P* | मापित | NIST | |
| 493.40754 nm | 10 | Ge II | emission | 4s2.4d 2D → 4s2.6p 2P* | मापित | NIST | |
| 517.84615 nm | 10 | Ge II | emission | 4s2.4d 2D → 4s2.4f 2F* | मापित | NIST | |
| 569.19543 nm | 9 | Ge I | emission | 4s2.4p.5s 3P* → 4s2.4p.6p 3D | मापित | NIST | |
| 580.2093 nm | 9 | Ge I | emission | 4s2.4p.5s 1P* → 4s2.4p.6p 1D | मापित | NIST | |
| 556.47408 nm | 8 | Ge I | emission | 4s2.4p.5s 3P* → 4s2.4p.6p 3S | मापित | NIST | |
| 560.70101 nm | 8 | Ge I | emission | 4s2.4p.5s 3P* → 4s2.4p.6p 3P | मापित | NIST | |
| 565.596 nm | 8 | Ge I | emission | 4s2.4p.5s 3P* → 4s2.4p.6p 3D | मापित | NIST | |
| 562.14256 nm | 7 | Ge I | emission | 4s2.4p.5s 3P* → 4s2.4p.6p 1P | मापित | NIST | |
| 733.0383 nm | 7 | Ge I | emission | 4s2.4p.5p 1P → 4s2.4p.7d (1/2,3/2)* | मापित | NIST | |
| 738.4208 nm | 7 | Ge I | emission | 4s2.4p.5p 3D → 4s2.4p.8s (1/2,1/2)* | मापित | NIST | |
| 526.58915 nm | 6 | Ge I | emission | 4s2.4p.5s 3P* → 4s2.4p.6p 3P | मापित | NIST | |
| 551.32634 nm | 6 | Ge I | emission | 4s2.4p.5s 3P* → 4s2.4p.6p 1D | मापित | NIST | |
| 561.61353 nm | 6 | Ge I | emission | 4s2.4p.5s 3P* → 4s2.4p.6p 3P | मापित | NIST | |
| 566.4226 nm | 6 | Ge I | emission | 4s2.4p.5s 1P* → 4s2.4p.6p 1S | मापित | NIST | |
| 570.17765 nm | 6 | Ge I | emission | 4s2.4p.5s 3P* → 4s2.4p.6p 1P | मापित | NIST | |
| 580.1029 nm | 6 | Ge I | emission | 4s2.4p.5s 3P* → 4s2.4p.6p 3D | मापित | NIST | |
| 655.74883 nm | 6 | Ge I | emission | 4s2.4p.5s 1P* → 4s2.4p.6p 3D | मापित | NIST | |
| 713.0126 nm | 6 | Ge I | emission | 4s2.4p.5p 3D → 4s2.4p.7d (3/2,5/2)* | मापित | NIST | |
| 740.2648 nm | 6 | Ge I | emission | 4s2.4p.5p 1P → 4s2.4p.6d (3/2,3/2)* | मापित | NIST | |
| 518.4103 nm | 5 | Ge II | emission | 4s2.5d 2D → 4s2.7f 2F* | मापित | NIST | |
| 566.4842 nm | 5 | Ge I | emission | 4s2.4p.5s 3P* → 4s2.4p.(2P*<1/2>).4f 2[7/2] | मापित | NIST | |
| 571.78769 nm | 5 | Ge I | emission | 4s2.4p.5s 3P* → 4s2.4p.6p 3D | मापित | NIST |
विस्तृत गुण
सहसंयोजक त्रिज्याएँ (विस्तृत)
- सहसंयोजक त्रिज्या (प्यूक्को)
- 121 pm
- सहसंयोजक त्रिज्या (प्यूक्को, द्विबंध)
- 111 pm
- सहसंयोजक त्रिज्या (प्यूक्को, त्रिबंध)
- 114 pm
वान डर वाल्स त्रिज्याएँ
- Truhlar
- 211 pm
- Batsanov
- 210 pm
- Alvarez
- 229 pm
- UFF
- 428 pm
- MM3
- 244 pm
- Dreiding
- 427 pm
परमाणु और धात्विक त्रिज्याएँ
- परमाणु त्रिज्या (राह्म)
- 234 pm
- धात्विक त्रिज्या (C12)
- 144 pm
संख्यांकन मापक्रम
- Mendeleev
- 89
- Pettifor
- 84
- Glawe
- 84
विद्युतऋणात्मकता मापक्रम
- Ghosh
- 0
- Miedema
- 5
- Gunnarsson–Lundqvist
- 5
- Robles–Bartolotti
- 4
ध्रुवणीयता और परिक्षेपण
- द्विध्रुव ध्रुवणीयता
- 40 a.u.
- द्विध्रुव ध्रुवणीयता (अनिश्चितता)
- 1 a.u.
- C₆
- 354 Ha·Bohr6
- C₆ (Gould–Bučko)
- 365 Ha·Bohr6
मीडेमा प्राचल
- मीडेमा मोलर आयतन
- 9.87 cm3/mol
- मीडेमा इलेक्ट्रॉन घनत्व
- 3
आपूर्ति जोखिम और अर्थशास्त्र
- उत्पादन संकेंद्रण
- 67
- सापेक्ष आपूर्ति जोखिम
- 8
- राजनीतिक स्थिरता (प्रमुख उत्पादक)
- 24
प्रावस्था संक्रमण और अपररूप
| गलनांक | 1211.4 K |
| क्वथनांक | 3106.15 K |
| क्रांतिक बिंदु (तापमान) | 9802.15 K |
ऑक्सीकरण अवस्था की श्रेणियाँ
उन्नत संदर्भ डेटा
परिरक्षण स्थिरांक (8)
| n | कक्षक | σ |
|---|---|---|
| 1 | s | 0.7063 |
| 2 | p | 3.9178 |
| 2 | s | 8.6352 |
| 3 | d | 15.7487 |
| 3 | p | 14.9864 |
| 3 | s | 14.2103 |
| 4 | p | 25.2196 |
| 4 | s | 23.9564 |
क्रिस्टल त्रिज्याओं का विवरण (3)
| आवेश | CN | प्रचक्रण | rcrystal (pm) | उत्पत्ति |
|---|---|---|---|---|
| 2 | VI | 87 | Ahrens (1952) ionic radius, | |
| 4 | IV | 53 | ||
| 4 | VI | 67 | from r^3 vs V plots, |
समस्थानिक क्षय के प्रकार (50)
| समस्थानिक | मोड | तीव्रता |
|---|---|---|
| 58 | 2p | — |
| 59 | B+ | 100% |
| 59 | B+p | 93% |
| 59 | 2p | 0.2% |
| 60 | B+ | 100% |
| 60 | B+p | 100% |
| 60 | 2p | 14% |
| 61 | B+ | 100% |
| 61 | B+p | 87% |
| 62 | B+ | 100% |
एक्स-रे प्रकीर्णन गुणक (506)
| ऊर्जा (eV) | f₁ | f₂ |
|---|---|---|
| 10 | — | 3.01183 |
| 10.1617 | — | 3.05548 |
| 10.3261 | — | 3.09976 |
| 10.4931 | — | 3.14468 |
| 10.6628 | — | 3.19025 |
| 10.8353 | — | 3.21825 |
| 11.0106 | — | 3.20755 |
| 11.1886 | — | 3.19689 |
| 11.3696 | — | 3.18626 |
| 11.5535 | — | 3.17568 |
अतिरिक्त डेटा
Estimated Crustal Abundance
The estimated element abundance in the earth's crust.
1.5 milligrams per kilogram
संदर्भ (1)
- [5] Germanium https://education.jlab.org/itselemental/ele032.html
Estimated Oceanic Abundance
The estimated element abundance in the earth's oceans.
5×10-5 milligrams per liter
संदर्भ (1)
- [5] Germanium https://education.jlab.org/itselemental/ele032.html
Sources
Sources of this element.
The metal is found in
▸ argyrodite, a sulfide of germanium and silver;
▸ germanite, which contains 8 percent of the element;
▸ zinc ores;
▸ coal; and
▸ other minerals
The element is commercially obtained from the dust from smelters that process zinc ores. It is also recovered from combustion by-products of certain coals.
Germanium can be separated from other metals by fractional distillation of its volatile tetrachloride. These techniques permit the production of germanium of ultra-high purity.
संदर्भ (1)
- [6] Germanium https://periodic.lanl.gov/32.shtml
संदर्भ
(9)
Data deposited in or computed by PubChem
The half-life and atomic mass data was provided by the Atomic Mass Data Center at the International Atomic Energy Agency.
Element data are cited from the Atomic weights of the elements (an IUPAC Technical Report). The IUPAC periodic table of elements can be found at https://iupac.org/what-we-do/periodic-table-of-elements/. Additional information can be found within IUPAC publication doi:10.1515/pac-2015-0703 Copyright © 2020 International Union of Pure and Applied Chemistry.
The information are cited from Pure Appl. Chem. 2018; 90(12): 1833-2092, https://doi.org/10.1515/pac-2015-0703.
Thomas Jefferson National Accelerator Facility (Jefferson Lab) is one of 17 national laboratories funded by the U.S. Department of Energy. The lab's primary mission is to conduct basic research of the atom's nucleus using the lab's unique particle accelerator, known as the Continuous Electron Beam Accelerator Facility (CEBAF). For more information visit https://www.jlab.org/
The periodic table at the LANL (Los Alamos National Laboratory) contains basic element information together with the history, source, properties, use, handling and more. The provenance data may be found from the link under the source name.
The periodic table contains NIST's critically-evaluated data on atomic properties of the elements. The provenance data that include data for atomic spectroscopy, X-ray and gamma ray, radiation dosimetry, nuclear physics, and condensed matter physics may be found from the link under the source name. Ref: https://www.nist.gov/pml/atomic-spectra-database
This section provides all form of data related to element Germanium.
The element property data was retrieved from publications.