Indium (In)
post-transition-metalSolid
标准原子量
114.818 u电子排布
[Kr] 5s2 4d10 5p1熔点
156.6 °C沸点
2071.85 °C密度
7310 kg/m³氧化态
−5, −2, −1, 0, +1, +2, +3电负性（鲍林）
1.78第一电离能
5.786356 eV发现年份
1863原子半径
155 pm详细信息
Indium is a soft, silvery post-transition metal in group 13. It is chemically related to gallium and thallium, but its stable chemistry is dominated by the +3 oxidation state, with +1 compounds also known. The element is rare in Earth's crust and is obtained chiefly as a by-product of zinc refining. Its technological importance is disproportionate to its abundance, especially because transparent conducting indium tin oxide is central to flat-panel displays, touch screens, and other optoelectronic devices.
Indium is available in ultra pure form. Indium is a very soft, silvery-white metal with a brilliant luster. The pure metal gives a high-pitched "cry" when bent. It wets glass, as does gallium.
The name derives from the term "indigo" for the indigo-blue line in the element's spark spectrum. It was discovered in 1863 by the German physicist Ferdinand Reich and the German metallurgist Hieronymus Theodor Richter, while examining zinc blende. They isolated indium in 1867.
Indium was discovered by the German chemists Ferdinand Reich and Hieronymus Theodor Richter in 1863. Reich and Richter had been looking for traces of the element thallium in samples of zinc ores. A brilliant indigo line in the sample's spectrum revealed the existence of indium. Indium is about as abundant as silver but is much easier to recover since it typically occurs along with zinc, iron, lead and copper ores.
From the brilliant indigo line in its spectrum. Discovered by Reich and Richter, who later isolated the metal. Until 1924, a gram or so constituted the world's supply of this element in isolated form. It is probably about as abundant as silver. About 4 million troy ounces of indium are now produced annually in the Free World. Canada is presently producing more than 1,000,000 troy ounces annually.
Pure indium is a very soft, lustrous, silvery-white metal at ordinary conditions. It can be cut with a knife, leaves a mark on paper, and emits a characteristic high-pitched “cry” when bent as its crystals deform. It melts at a relatively low temperature for a metal, about 157 °C.
The largest use of indium is in indium tin oxide, a transparent and electrically conducting oxide coating used on displays, touch panels, solar cells, and low-emissivity glass. Indium metal and indium-rich alloys are used in low-melting solders, fusible alloys, thermal interface materials, and seals that wet glass or ceramics. Indium is also used in compound semiconductors such as indium phosphide and indium gallium arsenide for high-speed electronics, lasers, photodetectors, and some photovoltaic cells.
Indium is used to coat the bearings of high speed motors since it allows for the even distribution of lubricating oil. Indium is used to dope germanium to make transistors. It is also used to make other electrical components such as rectifiers, thermistors and photoconductors. Indium can be used to make mirrors that are as reflective as silver mirrors but do not tarnish as quickly. Indium is also used to make low melting alloys. An alloy of 24% indium and 76% gallium is a liquid at room temperature.
It has found application in making low-melting allows; an allow of 24% indium - 76% gallium is liquid at room temperature. It is used in making bearing alloys, germanium transistors, rectifiers, thermistors, and photoconductors. It can be plated onto metal and evaporated onto glass, forming a mirror as good as that made with silver but with more resistance to atmospheric corrosion.
Isotopes in Medicine
111In (with a half-life of 2.8 days) is used in indium leukocyte imaging (Fig. IUPAC.49.1), in which white blood cells that are abundant at sites of infection are labeled with 111In to help locate the source of the infection [361] M. T. Syrjälä, V. Valtonen, K. Liewendahl, G. Myllylä. J. Nucl. Med.28, 155 (1987)., [362] M. D. Cerqueira, A. F. Jacobson. J. Nucl. Med.30, 703 (1989)., [363] C. Love, C. J. Palestro. J. Nucl. Med.Technol.32, 47 (2004)..
Isotopes Used as a Source of Radioactive Isotope(s)
113In is used to produce 113Sn (with a half-life of 115 days) via the reaction 113In (p, n) 113Sn, and 113In is used to produce the radioisotope 110In (with a half-life of 1.15 h) [364] F. E. Fakhari. Separation and Purification of 111In from Irradiated Cadmium Targets by Solid Phase Extraction (SPE) Method for Medical Applications, Deutsche National Bibliothek (2014), Feb. 26; http://archiv.ub.uni-marburg.de/diss/z2006/0132/view.html., [365] M. Mostafa, A. A. El Sadek, H. El Said, M. A. El Amir. J. Nucl. Radiochem. Sci.10, 1 (2009)..
Indium most often forms In³⁺ compounds, although In⁺ chemistry is significant and can be stabilized in some solids and salts. Indium(III) oxide, In₂O₃, is a wide-band-gap oxide and the main component of indium tin oxide. Indium(III) chloride, InCl₃, is a common Lewis-acidic reagent and precursor. Indium phosphide, InP, and indium arsenide, InAs, are important III-V semiconductors. Indium forms many alloys and intermetallic compounds, and its organometallic chemistry includes precursors used in vapor deposition.
See more information at the Indium compound page.
Bulk indium metal has low acute toxicity, but fine dusts, fumes, and soluble indium compounds require control in industrial settings. Inhalation exposure to indium tin oxide and some indium compounds has been associated with serious lung disease in workers. Many semiconductor compounds containing indium also contain toxic partners such as arsenic or phosphide-forming materials, so hazards are not due to indium alone. Natural indium has no significant radiological hazard.
There is evidence that indium has a low order of toxicity; however, care should be taken until further information is available.
Indium occurs mainly as a trace constituent in sulfide ores, especially zinc ores such as sphalerite, rather than as abundant indium minerals. During weathering and processing it tends to follow chalcophile pathways and can be retained in sulfide-rich residues or industrial wastes. Environmental concentrations are usually very low, and indium has no known biological role. Releases are most relevant near mining, smelting, refining, and electronic-material manufacturing sites.
Indium is not mined as a primary metal in most operations. It is recovered chiefly from residues and intermediate streams produced during zinc smelting and refining, with smaller contributions from other base-metal processing. Supply therefore depends strongly on ore composition, recovery technology, and the economics of host metals. Demand is led by transparent conducting oxides and specialized semiconductors, while solders and alloys account for smaller but useful markets. Recycling occurs from manufacturing scrap and some end-of-life products, but dispersed thin-film uses make complete recovery difficult. Substitution is possible in some applications, yet often involves trade-offs in conductivity, transparency, processing, or reliability.
Indium is most frequently associated with zinc materials, and it is from these that most commercial indium is now obtained; however, it is also found in iron, lead, and copper ores.
Indium is a relatively scarce element in the cosmos. Its stable isotopes are produced by neutron-capture processes in earlier generations of stars, with contributions from both slow and rapid neutron-capture nucleosynthesis. In planetary materials it is strongly chalcophile and is concentrated more readily in sulfide phases than in silicates, helping explain its association with zinc, lead, and tin ores on Earth.
- Natural indium is dominated by ¹¹⁵In, which is very weakly radioactive but has an extremely long half-life.
- Indium metal can form cold-welded seals because it remains soft and malleable at low temperatures.
- The element was named from the indigo-blue spectral line used in its discovery.
- Indium tin oxide is useful because it combines optical transparency with electrical conductivity.
- Indium wets glass better than many common metals, making it useful in special seals.
图片
性质
物理性质
- 原子半径（经验值）
- 155 pm 比较所有元素的原子半径（经验值） →
- 共价半径
- 142 pm 比较所有元素的共价半径 →
- 范德华半径
- 193 pm 比较所有元素的范德华半径 →
- 金属半径
- 142 pm 比较所有元素的金属半径 →
- 密度
- 7310 kg/m³ 比较所有元素的密度 →
- 摩尔体积
- 0.0157 L/mol
- 标准温度和压力下的物相
- 固态 比较所有元素的标准温度和压力下的物相 →
- 熔点
- 156.6 °C 比较所有元素的熔点 →
- 沸点
- 2071.85 °C 比较所有元素的沸点 →
- 热导率
- 81.8 W/(m·K) 比较所有元素的热导率 →
- 比热容
- 0.233 J/(g·K) 比较所有元素的比热容 →
- 摩尔热容
- 26.74 J/(mol·K) 比较所有元素的摩尔热容 →
- 晶体结构
- 四方 比较所有元素的晶体结构 →
化学性质
- 电负性（鲍林）
- 1.78 比较所有元素的电负性（鲍林） →
- 电负性（Allen）
- 1.656
- 电子亲和能
- 0.3 eV
- 第一电离能
- 5.786356 eV 比较所有元素的第一电离能 →
- 第二电离能
- 18.870475 eV 比较所有元素的第二电离能 →
- 第三电离能
- 28.044247 eV 比较所有元素的第三电离能 →
- 第四电离能
- 55.450191 eV 比较所有元素的第四电离能 →
- 第五电离能
- 69.300239 eV 比较所有元素的第五电离能 →
- 氧化态
- −5, −2, −1, 0, +1, +2, +3 比较所有元素的氧化态 →
- 价电子
- 3 比较所有元素的价电子 →
- 电子排布
- [Kr] 5s2 4d10 5p1
热力学性质
- 三相点（温度）
- 156.5936 °C
- 熔化热
- 0.03378764 eV 比较所有元素的熔化热 →
- 汽化热
- 2.402446 eV 比较所有元素的汽化热 →
- 升华热
- 2.518526 eV
- 原子化热
- 2.518526 eV
- 原子化焓
- 2.518526 eV
核性质
- 质子
- 49 比较所有元素的质子 →
- 中子
- 64 比较所有元素的中子 →
- 已知同位素
- 42 比较所有元素的已知同位素 →
- 稳定同位素
- 1 比较所有元素的稳定同位素 →
- 最稳定同位素
- In-113
- 发现年份
- 1863
丰度
- 丰度（地壳）
- 0.25 mg/kg 比较所有元素的丰度（地壳） →
- 丰度（海洋）
- 0.02 mg/L 比较所有元素的丰度（海洋） →
晶体结构
- 晶格常数a
- 459 pm
电子结构
- 各电子层电子数
- 2, 8, 18, 18, 3 比较所有元素的各电子层电子数 →
标识符
- CAS登记号
- 7440-74-6 比较所有元素的CAS登记号 →
- 谱项符号
- 2P°1/2
- InChI
- InChI=1S/In
- InChI Key
- APFVFJFRJDLVQX-UHFFFAOYSA-N
电子排布 实测值
In: 4d¹⁰ 5s² 5p¹[Kr] 4d¹⁰ 5s² 5p¹1s² 2s² 2p⁶ 3s² 3p⁶ 3d¹⁰ 4s² 4p⁶ 4d¹⁰ 5s² 5p¹原子模型
不同同位素的中子数、质量和稳定性不同，但中性原子的电子排布不变。
原子模型示意图，未按比例绘制。
原子指纹
发射 / 吸收光谱
同位素分布
| 质量数 | 原子质量（u） | 天然丰度 | 半衰期 |
|---|---|---|---|
| 113 稳定 | 112.90406184 ± 0.00000091 | 4.2900% | 稳定 |
物相 / 状态
原因: 低于熔点（156.6 °C）131.6 °C
示意图，未按比例绘制
相变点
相变能
在熔点熔化1 mol物质所需的能量
在沸点汽化1 mol物质所需的能量
在升华点升华1 mol物质所需的能量
密度
标准条件下
标准条件下
高级
原子光谱
已显示10项，共49项。 按离子电荷升序排列。
收录能级 ?
| 离子 | 电荷 | 能级 |
|---|---|---|
| In I | 0 | 114 |
| In II | +1 | 195 |
| In III | +2 | 28 |
| In IV | +3 | 18 |
| In V | +4 | 42 |
| In VI | +5 | 2 |
| In VII | +6 | 2 |
| In VIII | +7 | 2 |
| In IX | +8 | 2 |
| In X | +9 | 2 |
暂无晶体结构数据
晶体结构: tetragonal
离子半径
| 电荷 | 配位 | 自旋 | 半径 |
|---|---|---|---|
| +3 | 4 | 暂无 | 62 pm |
| +3 | 6 | 暂无 | 80 pm |
| +3 | 8 | 暂无 | 92 pm |
化合物
同位素 (1)
| 质量数 | 原子质量（u） | 天然丰度 | 半衰期 | 衰变方式 | |
|---|---|---|---|---|---|
| 113 稳定 | 112.90406184 ± 0.00000091 | 4.2900% ± 0.0500% | 稳定 | stable |
谱线
已显示50项，共277项。 默认仅显示具有实测强度的谱线。
| 波长（nm） | 强度 | 电离级 | 类型 | 跃迁 | 准确度 | 来源 | |
|---|---|---|---|---|---|---|---|
| 383.46308 nm | 32000 | In II | emission | 5s.5d 1D → 5s.4f 1F* | 实测值 | NIST | |
| 451.12972 nm | 18000 | In I | emission | 5s2.5p 2P* → 5s2.6s 2S | 实测值 | NIST | |
| 410.17504 nm | 17000 | In I | emission | 5s2.5p 2P* → 5s2.6s 2S | 实测值 | NIST | |
| 468.1115 nm | 16000 | In II | emission | 5s.5d 3D → 5s.4f 3F* | 实测值 | NIST | |
| 590.33916 nm | 9000 | In II | emission | 5s.6p 3P* → 5s.6d 3D | 实测值 | NIST | |
| 463.8162 nm | 8800 | In II | emission | 5s.5d 3D → 5s.4f 3F* | 实测值 | NIST | |
| 465.562 nm | 7800 | In II | emission | 5s.5d 3D → 5s.4f 3F* | 实测值 | NIST | |
| 464.4572 nm | 5900 | In II | emission | 5s.5d 3D → 5s.4f 1F* | 实测值 | NIST | |
| 718.29048 nm | 5800 | In II | emission | 5s.6s 3S → 5s.6p 3P* | 实测值 | NIST | |
| 384.2918 nm | 5600 | In II | emission | 5s.5d 1D → 5s.4f 3F* | 实测值 | NIST | |
| 591.87693 nm | 5100 | In II | emission | 5s.6p 1P* → 5s.6d 1D | 实测值 | NIST | |
| 616.254 nm | 4100 | In II | emission | 5s.4f 1F* → 5s<1/2,F=4>.6g | 实测值 | NIST | |
| 689.15826 nm | 3900 | In II | emission | 5s.6s 3S → 5s.6p 3P* | 实测值 | NIST | |
| 585.31709 nm | 3400 | In II | emission | 5s.6p 3P* → 5s.6d 3D | 实测值 | NIST | |
| 609.59333 nm | 3300 | In II | emission | 5s.6p 3P* → 5s.6d 3D | 实测值 | NIST | |
| 468.4791 nm | 2500 | In II | emission | 5s.5d 3D → 5s.4f 3F* | 实测值 | NIST | |
| 727.66388 nm | 2400 | In II | emission | 5s.6s 3S → 5s.6p 3P* | 实测值 | NIST | |
| 614.953 nm | 2200 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.6g | 实测值 | NIST | |
| 613.986 nm | 2100 | In II | emission | 5s.4f 3F* → 5s<1/2,F=5>.6g | 实测值 | NIST | |
| 614.32 nm | 2100 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.6g | 实测值 | NIST | |
| 614.813 nm | 2100 | In II | emission | 5s.4f 3F* → 5s<1/2,F=5>.6g | 实测值 | NIST | |
| 616.113 nm | 2000 | In II | emission | 5s.4f 1F* → 5s<1/2,F=5>.6g | 实测值 | NIST | |
| 465.6736 nm | 1700 | In II | emission | 5s.5d 3D → 5s.4f 3F* | 实测值 | NIST | |
| 551.3006 nm | 1500 | In II | emission | 5p2 3P → 5s.4f 1F* | 实测值 | NIST | |
| 614.126 nm | 1500 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.6g | 实测值 | NIST | |
| 405.69377 nm | 1300 | In II | emission | 5s.6p 3P* → 5s.8s 3S | 实测值 | NIST | |
| 591.52626 nm | 1300 | In II | emission | 5s.6p 3P* → 5s.6d 3D | 实测值 | NIST | |
| 557.6866 nm | 1200 | In II | emission | 5s.7p 1P* → 5s.10d 1D | 实测值 | NIST | |
| 551.935 nm | 1100 | In II | emission | 5s.6d 3D → 5s.7f 3F* | 实测值 | NIST | |
| 549.7486 nm | 1000 | In II | emission | 5s.6d 3D → 5s.7f 3F* | 实测值 | NIST | |
| 550.7048 nm | 1000 | In II | emission | 5s.6d 3D → 5s.7f 3F* | 实测值 | NIST | |
| 551.0883 nm | 1000 | In II | emission | 5s.7p 3P* → 5s.10d 3D | 实测值 | NIST | |
| 512.0847 nm | 960 | In II | emission | 5s.4f 3F* → 5s<1/2,F=5>.7g | 实测值 | NIST | |
| 390.20794 nm | 910 | In II | emission | 5s.6p 1P* → 5s.7d 1D | 实测值 | NIST | |
| 384.2158 nm | 900 | In II | emission | 5s.5d 1D → 5s.4f 3F* | 实测值 | NIST | |
| 512.1781 nm | 880 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.7g | 实测值 | NIST | |
| 611.58707 nm | 830 | In II | emission | 5s.6p 3P* → 5s.6d 3D | 实测值 | NIST | |
| 511.7388 nm | 810 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.7g | 实测值 | NIST | |
| 511.5109 nm | 800 | In II | emission | 5s.4f 3F* → 5s<1/2,F=5>.7g | 实测值 | NIST | |
| 512.9865 nm | 710 | In II | emission | 5s.4f 1F* → 5s<1/2,F=5>.7g | 实测值 | NIST | |
| 463.7055 nm | 610 | In II | emission | 5s.5d 3D → 5s.4f 3F* | 实测值 | NIST | |
| 511.6041 nm | 590 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.7g | 实测值 | NIST | |
| 550.7779 nm | 570 | In II | emission | 5s.6d 3D → 5s.7f 3F* | 实测值 | NIST | |
| 414.9635 nm | 550 | In II | emission | 5s.4f 1F* → 5s<1/2,F=5>.10g | 实测值 | NIST | |
| 530.94926 nm | 550 | In II | emission | 5s.6p 3P* → 5s.6d 1D | 实测值 | NIST | |
| 454.8998 nm | 540 | In II | emission | 5p2 1D → 5s.8p 3P* | 实测值 | NIST | |
| 461.6069 nm | 540 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.8g | 实测值 | NIST | |
| 457.0881 nm | 520 | In II | emission | 5s.6d 3D → 5s.9f 3F* | 实测值 | NIST | |
| 458.701 nm | 520 | In II | emission | 5s.6d 3D → 5s.9f 3F* | 实测值 | NIST | |
| 457.1286 nm | 510 | In II | emission | 5s.6d 3D → 5s.9f 3F* | 实测值 | NIST |
扩展性质
共价半径（扩展）
- 共价半径（Pyykkö）
- 142 pm
- 共价半径（Pyykkö，双键）
- 136 pm
- 共价半径（Pyykkö，三键）
- 146 pm
范德华半径
- Bondi
- 193 pm
- Batsanov
- 220 pm
- Alvarez
- 243 pm
- UFF
- 446.3 pm
- MM3
- 264 pm
- Dreiding
- 459 pm
原子半径与金属半径
- 原子半径（Rahm）
- 246 pm
- 金属半径（C12）
- 158 pm
编号标度
- Mendeleev
- 84
- Pettifor
- 79
- Glawe
- 80
电负性标度
- Ghosh
- 0
- Miedema
- 4
- Gunnarsson–Lundqvist
- 3
- Robles–Bartolotti
- 2
极化率与色散
- 偶极极化率
- 65 a.u.
- 偶极极化率（不确定度）
- 4 a.u.
- C₆
- 779 Ha·Bohr6
- C₆ (Gould–Bučko)
- 643 Ha·Bohr6
Miedema参数
- Miedema摩尔体积
- 15.75 cm3/mol
- Miedema电子密度
- 2
供应风险与经济性
- 生产集中度
- 53
- 相对供应风险
- 8
- 政治稳定性（最大生产国）
- 24
相变与同素异形体
| 熔点 | 429.75 K |
| 沸点 | 2300.15 K |
| 三相点（温度） | 429.74 K |
氧化态分类
高级参考数据
屏蔽常数 (11)
| n | 轨道 | σ |
|---|---|---|
| 1 | s | 0.9903 |
| 2 | p | 4.102 |
| 2 | s | 12.8764 |
| 3 | d | 14.3218 |
| 3 | p | 17.4793 |
| 3 | s | 17.3692 |
| 4 | d | 32.0584 |
| 4 | p | 28.6312 |
| 4 | s | 27.2388 |
| 5 | p | 40.53 |
晶体半径详情 (3)
| 电荷 | CN | 自旋 | rcrystal (pm) | 来源 |
|---|---|---|---|---|
| 3 | IV | 76 | ||
| 3 | VI | 94 | from r^3 vs V plots, | |
| 3 | VIII | 106 | from r^3 vs V plots, calculated, |
同位素衰变方式 (69)
| 同位素 | 模式 | 强度 |
|---|---|---|
| 96 | B+ | — |
| 96 | p | — |
| 97 | B+ | 100% |
| 97 | B+p | 2.3% |
| 97 | p | — |
| 98 | B+ | 100% |
| 98 | B+p | 0.1% |
| 99 | B+ | 100% |
| 99 | B+p | 0.3% |
| 100 | B+ | 100% |
X射线散射因子 (510)
| 能量 (eV) | f₁ | f₂ |
|---|---|---|
| 10 | — | 2.16244 |
| 10.1617 | — | 2.07002 |
| 10.3261 | — | 1.98155 |
| 10.4931 | — | 1.89686 |
| 10.6628 | — | 1.81579 |
| 10.8353 | — | 1.72844 |
| 11.0106 | — | 1.54985 |
| 11.1886 | — | 1.35731 |
| 11.3696 | — | 0.99325 |
| 11.5535 | — | 0.74202 |
补充数据
Estimated Crustal Abundance
The estimated element abundance in the earth's crust.
2.5×10-1 milligrams per kilogram
参考文献 (1)
Estimated Oceanic Abundance
The estimated element abundance in the earth's oceans.
2×10-2 milligrams per liter
参考文献 (1)
Sources
Sources of this element.
Indium is most frequently associated with zinc materials, and it is from these that most commercial indium is now obtained; however, it is also found in iron, lead, and copper ores.
参考文献 (1)
- [6] Indium https://periodic.lanl.gov/49.shtml
参考文献
(9)
Data deposited in or computed by PubChem
The half-life and atomic mass data was provided by the Atomic Mass Data Center at the International Atomic Energy Agency.
Element data are cited from the Atomic weights of the elements (an IUPAC Technical Report). The IUPAC periodic table of elements can be found at https://iupac.org/what-we-do/periodic-table-of-elements/. Additional information can be found within IUPAC publication doi:10.1515/pac-2015-0703 Copyright © 2020 International Union of Pure and Applied Chemistry.
The information are cited from Pure Appl. Chem. 2018; 90(12): 1833-2092, https://doi.org/10.1515/pac-2015-0703.
Thomas Jefferson National Accelerator Facility (Jefferson Lab) is one of 17 national laboratories funded by the U.S. Department of Energy. The lab's primary mission is to conduct basic research of the atom's nucleus using the lab's unique particle accelerator, known as the Continuous Electron Beam Accelerator Facility (CEBAF). For more information visit https://www.jlab.org/
The periodic table at the LANL (Los Alamos National Laboratory) contains basic element information together with the history, source, properties, use, handling and more. The provenance data may be found from the link under the source name.
The periodic table contains NIST's critically-evaluated data on atomic properties of the elements. The provenance data that include data for atomic spectroscopy, X-ray and gamma ray, radiation dosimetry, nuclear physics, and condensed matter physics may be found from the link under the source name. Ref: https://www.nist.gov/pml/atomic-spectra-database
This section provides all form of data related to element Indium.
The element property data was retrieved from publications.