Gallium (Ga)
post-transition-metalSolid
标准原子量
69.723 u电子排布
[Ar] 4s2 3d10 4p1熔点
29.76 °C沸点
2203.85 °C密度
5910 kg/m³氧化态
−5, −4, −3, −2, −1, 0, +1, +2, +3电负性（鲍林）
1.81第一电离能
5.999302 eV发现年份
1875原子半径
130 pm详细信息
Gallium is a soft post-transition metal in group 13, chemically related to aluminium and indium. It is notable for melting just above room temperature, forming low-melting alloys, and supplying semiconductors through compounds such as gallium arsenide and gallium nitride. In nature it is dispersed rather than concentrated in its own ores, so it is recovered mainly as a by-product of aluminium and zinc processing.
It is one of four metals mercury, cesium, and rubidium which can be liquid near room temperature and, thus, can be used in high-temperature thermometers. It has one of the longest liquid ranges of any metal and has a low vapor pressure even at high temperatures.
There is a strong tendency for gallium to supercool below its freezing point. Therefore, seeding may be necessary to initiate solidification.
Ultra-pure gallium has a beautiful, silvery appearance, and the solid metal exhibits a conchoidal fracture similar to glass. The metal expands 3.1 percent on solidifying; therefore, it should not be stored in glass or metal containers, because they may break as the metal solidifies.
High-purity gallium is attacked only slowly by mineral acids.
The name derives from the Latin gallia for France. It was discovered in zinc blende by the French chemist Paul-Emile Lecoq de Boisbaudran in 1875. It was first isolated in 1878 by Lecoq de Boisbaudran and the French chemist Émile-Clément Jungflesch.
First proposed to exist by Dmitri Mendeleyev in 1871 based on gaps in his newly created Periodic Table of Elements, gallium was discovered spectroscopically by the French chemist Paul-Émile Lecoq de Boisbaudran in 1875. Later that same year, Lecoq was able to obtain pure gallium through the electrolysis of a solution of gallium hydroxide (Ga(OH)3) in potassium hydroxide (KOH). Trace amounts of gallium are found in diaspore, sphalerite, germanite and bauxite as well as in the byproducts of burning coal.
From the Latin word Gallia, France; also from Latin, gallus, a translation of "Lecoq," a cock. Predicted and described by Mendeleev as ekaaluminum, and discovered spectroscopically by Lecoq de Boisbaudran in 1875, who in the same year obtained the free metal by electrolysis of a solution of the hydroxide in KOH.
Pure gallium is a silvery, lustrous metal that is solid at ordinary room temperature but melts at about 30 °C. The solid is brittle enough to fracture, while the liquid readily wets many surfaces and can penetrate some metals, especially aluminium.
Gallium is used chiefly in compound semiconductors. Gallium arsenide (GaAs) is important in high-frequency electronics, optoelectronics, infrared light-emitting diodes, and some photovoltaic cells. Gallium nitride (GaN) is central to blue and ultraviolet light-emitting diodes, laser diodes, and efficient power electronics. Low-melting gallium alloys are used in thermometers, thermal interfaces, and specialized heat-transfer applications where mercury is undesirable. Radioisotopes such as ⁶⁷Ga and ⁶⁸Ga are used in diagnostic nuclear medicine.
Gallium melts near room temperature and has one of the largest liquid ranges of any metal, so it has found use in high temperature thermometers. Gallium easily forms alloys with most metals and has been used to create low melting alloys. Gallium is used as a doping material for semiconductors and has been used to produce solid-state items like transistors and light emitting diodes. Gallium arsenide (GaAs) can produce laser light directly from electricity. Large amounts of gallium trichloride (GaCl3) have been gathered to build the Gallium Neutrino Observatory, an observatory located in Italy built to study particles called neutrinos which are produced inside the sun during the process of nuclear fusion.
Gallium wets glass or porcelain and forms a brilliant mirror when it is painted on glass. It is widely used in doping semiconductors and producing solid-state devices such as transistors.
Magnesium gallate containing divalent impurities, such as Mn+2, is finding use in commercial ultraviolet-activated powder phosphors. Gallium arsenide is capable of converting electricity directly into coherent light. Gallium readily alloys with most metals, and has been used as a component in low-melting alloys.
Isotopes in Medicine
68Ga (with a half-life of 68 min) is a radioactive isotope that emits positrons, which are used to produce high-resolution imaging with positron emission tomography (PET). Unlike 18F, which is most commonly used, 68Ga is more easily produced using a cost-effective generator with the parent radionuclide 68Ge (with a half-life of 271 days) (Fig. IUPAC.31.1). Once produced, 68Ga easily couples to biomolecules (most commonly peptides) that target G-protein coupled receptors, which are over-expressed on human tumor cells. The labeled protein acts as a radioactive tracer for cancer diagnostics. PET images are often coupled with CT images to get a more complete picture of the body [256] I. Kayani, B. G. Conry, A. M. Groves, T. Win, J. Dickson, M. Caplin, J. B. Bomanji. J. Nucl. Med.50, 1927 (2009)., [257] M. Fani, J. P. André, H. R. Maecke. Contrast Media Mol. Imaging3, 67 (2008)., [258] G. J. Ehrhardt, M. J. Welch. J. Nucl. Med.19, 925 (1978)., [259] G. Ehrhardt, S. Wagner, M. J. Welch. J. Labelled Compd. Radiopharm.16, 111 (1979)., [260] M. V. Cantorias, S. D. Figueroa, T. P. Quinn, J. R. Lever, T. J. Hoffman, L. D. Watkinson, T. L. Carmack, C. S. Cutler. Nucl. Med. Biol.36, 505 (2009)., [261] J. C. Rold, T. L. Sieckman, G. L. Figueroa, S. D. Sublett, S. V. Engelbrecht, H. Cutler, C. S. Jurisson, S. S. Hoffman, T. J. Bottenus, B. N. Garrison. Trans. Am. Nucl. Soc.98, 802 (2008)., [262] J. Fitzsimmons, M. Fassbender, R. Atcher. J. Nucl. Med.48, 319 (2007).. Radiopharmaceutical 67Ga (with a half-life of 78 h) is a gamma-emitting isotope used in scintigraphy for medical imaging [263] S. M. Larson, P. B. Hoffer. “Normal patterns of localization”, in Gallium-67 Imaging, P. B. Hoffer, C. Bekerman, and R. E. Henkin (Eds.), John Wiley, New York (1978)., [264] A. Wirth, J. F. Seymour, R. J. Hicks, R. Ware, R. Fisher, M. Prince, M. P. MacManus, G. Ryan, H. Januszewicz, M. Wolf. Am. J. Med.112, 262 (2002)., [265] A. Vijayananthan, A. V. Arumugam, G. Kumar, D. Harichandra. Int. J. Biomed. Imaging4 (2), e23 (2008)..
Gallium most commonly adopts the +3 oxidation state, although lower-valent gallium chemistry is well established in specialized compounds. Gallium(III) oxide (Ga₂O₃) is a wide-band-gap oxide of growing interest for power and ultraviolet devices. Gallium arsenide (GaAs), gallium nitride (GaN), gallium phosphide (GaP), and gallium antimonide (GaSb) are important III-V semiconductors. Gallium(III) chloride (GaCl₃) is a Lewis acidic halide and forms many adducts. Gallium(III) salts often hydrolyze in water, reflecting the high charge density of Ga³⁺.
See more information at the Gallium compound page.
Compact gallium metal has low acute toxicity, but it can stain skin and damage aluminium parts by liquid-metal embrittlement. Dusts, fumes, and soluble gallium compounds require normal laboratory controls because toxicity depends strongly on compound form and exposure route. Gallium arsenide (GaAs) introduces additional concern from arsenic during machining, heating, or waste handling. Medical radioisotopes present isotope-specific radiation hazards.
Its toxicity appears to be of a low order, but should be handled with care until more data is available.
Gallium occurs at trace levels in many minerals, especially those associated with aluminium and zinc ores. It substitutes for chemically similar ions rather than forming abundant gallium minerals. Weathering and industrial processing can mobilize small amounts, but gallium is not a major nutrient and has no well-established biological role. Environmental concern is usually tied to mining residues, semiconductor waste, and associated elements such as arsenic rather than to metallic gallium alone.
Gallium supply is dominated by by-product recovery, especially from bauxite processing liquors and, to a lesser extent, zinc-processing streams. Because primary ores are not mined for gallium alone, output can be constrained by aluminium and zinc production, refinery technology, and purification capacity. Demand is driven mainly by semiconductor and optoelectronic materials, where high purity is essential. Recycling occurs from manufacturing scrap and some end-of-life material, but dispersed uses and complex devices limit complete recovery. Substitution is application-specific; silicon, silicon carbide, or other III-V compounds can replace gallium materials in some devices but not without design changes.
Gallium is often found as a trace element in diaspore, sphalerite, germanite, bauxite, and coal. Some flue dusts from burning coal have been shown to contain as much 1.5 percent gallium.
Gallium is a relatively rare element in the cosmos compared with lighter metals. Its stable isotopes, ⁶⁹Ga and ⁷¹Ga, are produced in stellar nucleosynthesis pathways involving neutron capture and related processes in evolved stars and supernova environments. In planetary materials it behaves as a moderately volatile, lithophile to chalcophile trace element and is used in geochemical studies of differentiation and volatility.
- Gallium expands on freezing, so solidification can break rigid containers.
- The liquid metal has an unusually wide liquid range before boiling.
- Gallium can diffuse into aluminium and make it crumble under stress.
- Natural gallium consists mainly of two stable isotopes, ⁶⁹Ga and ⁷¹Ga.
- Very high-purity gallium is needed for many semiconductor applications.
图片
性质
物理性质
- 原子半径（经验值）
- 130 pm 比较所有元素的原子半径（经验值） →
- 共价半径
- 122 pm 比较所有元素的共价半径 →
- 范德华半径
- 187 pm 比较所有元素的范德华半径 →
- 金属半径
- 125 pm 比较所有元素的金属半径 →
- 密度
- 5910 kg/m³ 比较所有元素的密度 →
- 摩尔体积
- 0.0118 L/mol
- 标准温度和压力下的物相
- 固态 比较所有元素的标准温度和压力下的物相 →
- 熔点
- 29.76 °C 比较所有元素的熔点 →
- 沸点
- 2203.85 °C 比较所有元素的沸点 →
- 热导率
- 28.1 W/(m·K) 比较所有元素的热导率 →
- 比热容
- 0.373 J/(g·K) 比较所有元素的比热容 →
- 摩尔热容
- 26.03 J/(mol·K) 比较所有元素的摩尔热容 →
- 晶体结构
- 正交 比较所有元素的晶体结构 →
化学性质
- 电负性（鲍林）
- 1.81 比较所有元素的电负性（鲍林） →
- 电负性（Allen）
- 1.756
- 电子亲和能
- 0.3 eV
- 第一电离能
- 5.999302 eV 比较所有元素的第一电离能 →
- 第二电离能
- 20.515211 eV 比较所有元素的第二电离能 →
- 第三电离能
- 30.725866 eV 比较所有元素的第三电离能 →
- 第四电离能
- 63.241218 eV 比较所有元素的第四电离能 →
- 第五电离能
- 86.010296 eV 比较所有元素的第五电离能 →
- 氧化态
- −5, −4, −3, −2, −1, 0, +1, +2, +3 比较所有元素的氧化态 →
- 价电子
- 3 比较所有元素的价电子 →
- 电子排布
- [Ar] 4s2 3d10 4p1
热力学性质
- 三相点（温度）
- 29.7666 °C
- 熔化热
- 0.05793647 eV 比较所有元素的熔化热 →
- 汽化热
- 2.653262 eV 比较所有元素的汽化热 →
- 升华热
- 2.808727 eV
- 原子化热
- 2.808727 eV
- 原子化焓
- 2.818676 eV
核性质
- 质子
- 31 比较所有元素的质子 →
- 中子
- 38 比较所有元素的中子 →
- 已知同位素
- 33 比较所有元素的已知同位素 →
- 稳定同位素
- 2 比较所有元素的稳定同位素 →
- 最稳定同位素
- Ga-69
- 发现年份
- 1875
丰度
- 丰度（地壳）
- 19 mg/kg 比较所有元素的丰度（地壳） →
- 丰度（海洋）
- 3 × 10−5 mg/L 比较所有元素的丰度（海洋） →
晶体结构
- 晶格常数a
- 451 pm
电子结构
- 各电子层电子数
- 2, 8, 18, 3 比较所有元素的各电子层电子数 →
标识符
- CAS登记号
- 7440-55-3 比较所有元素的CAS登记号 →
- 谱项符号
- 2P°1/2
- InChI
- InChI=1S/Ga
- InChI Key
- GYHNNYVSQQEPJS-UHFFFAOYSA-N
电子排布 实测值
Ga: 3d¹⁰ 4s² 4p¹[Ar] 3d¹⁰ 4s² 4p¹1s² 2s² 2p⁶ 3s² 3p⁶ 3d¹⁰ 4s² 4p¹原子模型
不同同位素的中子数、质量和稳定性不同，但中性原子的电子排布不变。
原子模型示意图，未按比例绘制。
原子指纹
发射 / 吸收光谱
同位素分布
| 质量数 | 原子质量（u） | 天然丰度 | 半衰期 |
|---|---|---|---|
| 69 稳定 | 68.9255735 ± 0.0000013 | 60.1080% | 稳定 |
| 71 稳定 | 70.92470258 ± 0.00000087 | 39.8920% | 稳定 |
物相 / 状态
原因: 低于熔点（29.76 °C）4.8 °C
示意图，未按比例绘制
相变点
相变能
在熔点熔化1 mol物质所需的能量
在沸点汽化1 mol物质所需的能量
在升华点升华1 mol物质所需的能量
密度
标准条件下
标准条件下
高级
原子光谱
已显示10项，共31项。 按离子电荷升序排列。
收录谱线 ?
| 离子 | 电荷 | 谱线总数 | 跃迁概率 | 能级标记 |
|---|---|---|---|---|
| Ga I | 0 | 342 | 23 | 342 |
| Ga II | +1 | 176 | 10 | 176 |
| Ga III | +2 | 113 | 2 | 113 |
| Ga IV | +3 | 594 | 0 | 594 |
| Ga V | +4 | 185 | 0 | 185 |
| Ga VI | +5 | 501 | 0 | 501 |
| Ga VII | +6 | 451 | 0 | 451 |
收录能级 ?
| 离子 | 电荷 | 能级 |
|---|---|---|
| Ga I | 0 | 262 |
| Ga II | +1 | 96 |
| Ga III | +2 | 61 |
| Ga IV | +3 | 192 |
| Ga V | +4 | 92 |
| Ga VI | +5 | 158 |
| Ga VII | +6 | 181 |
| Ga VIII | +7 | 2 |
| Ga IX | +8 | 2 |
| Ga X | +9 | 2 |
离子半径
| 电荷 | 配位 | 自旋 | 半径 |
|---|---|---|---|
| +3 | 4 | 暂无 | 47 pm |
| +3 | 5 | 暂无 | 55.00000000000001 pm |
| +3 | 6 | 暂无 | 62 pm |
化合物
同位素 (2)
| 质量数 | 原子质量（u） | 天然丰度 | 半衰期 | 衰变方式 | |
|---|---|---|---|---|---|
| 69 稳定 | 68.9255735 ± 0.0000013 | 60.1080% ± 0.0090% | 稳定 | stable | |
| 71 稳定 | 70.92470258 ± 0.00000087 | 39.8920% ± 0.0090% | 稳定 | stable |
谱线
| 波长（nm） | 强度 | 电离级 | 类型 | 跃迁 | 准确度 | 来源 | |
|---|---|---|---|---|---|---|---|
| 417.33 nm | 暂无 | ID 486 | emission | 3s2.3p3 2P* → 3s2.3p3 2P* | 实测值 | NIST | |
| 424.0525 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.70p 2P* | 实测值 | NIST | |
| 424.0525 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.70p 2P* | 实测值 | NIST | |
| 424.0651 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.69p 2P* | 实测值 | NIST | |
| 424.0651 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.69p 2P* | 实测值 | NIST | |
| 424.08 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.68p 2P* | 实测值 | NIST | |
| 424.08 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.68p 2P* | 实测值 | NIST | |
| 424.0924 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.67p 2P* | 实测值 | NIST | |
| 424.0924 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.67p 2P* | 实测值 | NIST | |
| 424.1098 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.66p 2P* | 实测值 | NIST | |
| 424.1098 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.66p 2P* | 实测值 | NIST | |
| 424.1257 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.65p 2P* | 实测值 | NIST | |
| 424.1257 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.65p 2P* | 实测值 | NIST | |
| 424.1406 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.64p 2P* | 实测值 | NIST | |
| 424.1406 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.64p 2P* | 实测值 | NIST | |
| 424.1588 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.63p 2P* | 实测值 | NIST | |
| 424.1588 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.63p 2P* | 实测值 | NIST | |
| 424.1761 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.62p 2P* | 实测值 | NIST | |
| 424.1761 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.62p 2P* | 实测值 | NIST | |
| 424.1948 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.61p 2P* | 实测值 | NIST | |
| 424.1948 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.61p 2P* | 实测值 | NIST | |
| 424.2157 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.60p 2P* | 实测值 | NIST | |
| 424.2157 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.60p 2P* | 实测值 | NIST | |
| 424.2367 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.59p 2P* | 实测值 | NIST | |
| 424.2367 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.59p 2P* | 实测值 | NIST | |
| 424.2582 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.58p 2P* | 实测值 | NIST | |
| 424.2582 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.58p 2P* | 实测值 | NIST | |
| 424.2826 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.57p 2P* | 实测值 | NIST | |
| 424.2826 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.57p 2P* | 实测值 | NIST | |
| 424.3887 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.53p 2P* | 实测值 | NIST | |
| 424.3887 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.53p 2P* | 实测值 | NIST | |
| 424.4204 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.52p 2P* | 实测值 | NIST | |
| 424.4204 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.52p 2P* | 实测值 | NIST | |
| 424.4531 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.51p 2P* | 实测值 | NIST | |
| 424.4531 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.51p 2P* | 实测值 | NIST | |
| 424.4886 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.50p 2P* | 实测值 | NIST | |
| 424.4886 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.50p 2P* | 实测值 | NIST | |
| 424.5261 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.49p 2P* | 实测值 | NIST | |
| 424.5261 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.49p 2P* | 实测值 | NIST | |
| 424.5675 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.48p 2P* | 实测值 | NIST | |
| 424.5675 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.48p 2P* | 实测值 | NIST | |
| 424.6112 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.47p 2P* | 实测值 | NIST | |
| 424.6112 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.47p 2P* | 实测值 | NIST | |
| 424.6563 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.46p 2P* | 实测值 | NIST | |
| 424.6563 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.46p 2P* | 实测值 | NIST | |
| 424.7046 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.45p 2P* | 实测值 | NIST | |
| 424.7046 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.45p 2P* | 实测值 | NIST | |
| 424.7569 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.44p 2P* | 实测值 | NIST | |
| 424.7569 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.44p 2P* | 实测值 | NIST | |
| 424.8143 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.43p 2P* | 实测值 | NIST | |
| 424.8143 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.43p 2P* | 实测值 | NIST | |
| 424.8743 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.42p 2P* | 实测值 | NIST | |
| 424.8743 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.42p 2P* | 实测值 | NIST | |
| 424.94 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.41p 2P* | 实测值 | NIST | |
| 424.94 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.41p 2P* | 实测值 | NIST | |
| 425.4789 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.34d 2D | 实测值 | NIST | |
| 425.4799 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.34d 2D | 实测值 | NIST | |
| 426.035 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.30d 2D | 实测值 | NIST | |
| 426.0365 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.30d 2D | 实测值 | NIST | |
| 426.6348 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.27d 2D | 实测值 | NIST | |
| 426.6367 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.27d 2D | 实测值 | NIST | |
| 427.1688 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.25d 2D | 实测值 | NIST | |
| 427.1712 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.25d 2D | 实测值 | NIST | |
| 427.8589 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.23d 2D | 实测值 | NIST | |
| 427.8621 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.23d 2D | 实测值 | NIST | |
| 428.7731 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.21d 2D | 实测值 | NIST | |
| 428.7774 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.21d 2D | 实测值 | NIST | |
| 429.3459 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.20d 2D | 实测值 | NIST | |
| 429.3507 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.20d 2D | 实测值 | NIST | |
| 430.0203 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.19d 2D | 实测值 | NIST | |
| 430.026 nm | 暂无 | Ga I | emission | 4s2.5s 2S → 4s2.19d 2D | 实测值 | NIST | |
| 448.84 nm | 暂无 | ID 505 | emission | 5p 2P* → 5d 2D | 实测值 | NIST | |
| 459.16 nm | 暂无 | ID 505 | emission | 5s 2S → 5p 2P* | 实测值 | NIST | |
| 557 nm | 暂无 | ID 482 | emission | 1s.5s 3S → 1s.5p 3P* | 实测值 | NIST | |
| 567.7 nm | 暂无 | ID 498 | emission | 3s2.3p2 3P → 3s2.3p2 3P | 实测值 | NIST | |
| 587 nm | 暂无 | ID 482 | emission | 1s.4p 3P* → 1s.4d 3D | 实测值 | NIST | |
| 675 nm | 暂无 | ID 486 | emission | 3s2.3p3 2D* → 3s2.3p3 2D* | 实测值 | NIST | |
| 706.7 nm | 暂无 | ID 505 | emission | 4p 2P* → 4d 2D | 实测值 | NIST |
扩展性质
共价半径（扩展）
- 共价半径（Pyykkö）
- 124 pm
- 共价半径（Pyykkö，双键）
- 117 pm
- 共价半径（Pyykkö，三键）
- 121 pm
范德华半径
- Bondi
- 187 pm
- Batsanov
- 210 pm
- Alvarez
- 232 pm
- UFF
- 438.3 pm
- MM3
- 246 pm
- Dreiding
- 439 pm
原子半径与金属半径
- 原子半径（Rahm）
- 233 pm
- 金属半径（C12）
- 140 pm
编号标度
- Mendeleev
- 83
- Pettifor
- 81
- Glawe
- 79
电负性标度
- Ghosh
- 0
- Miedema
- 4
- Gunnarsson–Lundqvist
- 3
- Robles–Bartolotti
- 3
极化率与色散
- 偶极极化率
- 50 a.u.
- 偶极极化率（不确定度）
- 3 a.u.
- C₆
- 498 Ha·Bohr6
- C₆ (Gould–Bučko)
- 456 Ha·Bohr6
Miedema参数
- Miedema摩尔体积
- 11.82 cm3/mol
- Miedema电子密度
- 2
供应风险与经济性
- 生产集中度
- 54
- 相对供应风险
- 8
- 政治稳定性（最大生产国）
- 24
相变与同素异形体
| 熔点 | 302.91 K |
| 沸点 | 2502.15 K |
| 三相点（温度） | 302.92 K |
氧化态分类
高级参考数据
屏蔽常数 (8)
| n | 轨道 | σ |
|---|---|---|
| 1 | s | 0.6906 |
| 2 | p | 3.9092 |
| 2 | s | 8.401 |
| 3 | d | 15.9067 |
| 3 | p | 14.7964 |
| 3 | s | 14.0038 |
| 4 | p | 24.7784 |
| 4 | s | 23.9332 |
晶体半径详情 (3)
| 电荷 | CN | 自旋 | rcrystal (pm) | 来源 |
|---|---|---|---|---|
| 3 | IV | 61 | ||
| 3 | V | 69 | ||
| 3 | VI | 76 | from r^3 vs V plots, |
同位素衰变方式 (51)
| 同位素 | 模式 | 强度 |
|---|---|---|
| 56 | p | — |
| 57 | p | — |
| 58 | p | — |
| 59 | p | — |
| 60 | B+ | 100% |
| 60 | B+p | 1.6% |
| 60 | B+A | 0% |
| 61 | B+ | 100% |
| 61 | B+p | 0.3% |
| 62 | B+ | 100% |
X射线散射因子 (506)
| 能量 (eV) | f₁ | f₂ |
|---|---|---|
| 10 | — | 2.98527 |
| 10.1617 | — | 2.98141 |
| 10.3261 | — | 2.97756 |
| 10.4931 | — | 2.9737 |
| 10.6628 | — | 2.96986 |
| 10.8353 | — | 2.96602 |
| 11.0106 | — | 2.95695 |
| 11.1886 | — | 2.90859 |
| 11.3696 | — | 2.86103 |
| 11.5535 | — | 2.81425 |
补充数据
Estimated Crustal Abundance
The estimated element abundance in the earth's crust.
1.9×101 milligrams per kilogram
参考文献 (1)
Estimated Oceanic Abundance
The estimated element abundance in the earth's oceans.
3×10-5 milligrams per liter
参考文献 (1)
Sources
Sources of this element.
Gallium is often found as a trace element in diaspore, sphalerite, germanite, bauxite, and coal. Some flue dusts from burning coal have been shown to contain as much 1.5 percent gallium.
参考文献 (1)
- [6] Gallium https://periodic.lanl.gov/31.shtml
参考文献
(9)
Data deposited in or computed by PubChem
The half-life and atomic mass data was provided by the Atomic Mass Data Center at the International Atomic Energy Agency.
Element data are cited from the Atomic weights of the elements (an IUPAC Technical Report). The IUPAC periodic table of elements can be found at https://iupac.org/what-we-do/periodic-table-of-elements/. Additional information can be found within IUPAC publication doi:10.1515/pac-2015-0703 Copyright © 2020 International Union of Pure and Applied Chemistry.
The information are cited from Pure Appl. Chem. 2018; 90(12): 1833-2092, https://doi.org/10.1515/pac-2015-0703.
Thomas Jefferson National Accelerator Facility (Jefferson Lab) is one of 17 national laboratories funded by the U.S. Department of Energy. The lab's primary mission is to conduct basic research of the atom's nucleus using the lab's unique particle accelerator, known as the Continuous Electron Beam Accelerator Facility (CEBAF). For more information visit https://www.jlab.org/
The periodic table at the LANL (Los Alamos National Laboratory) contains basic element information together with the history, source, properties, use, handling and more. The provenance data may be found from the link under the source name.
The periodic table contains NIST's critically-evaluated data on atomic properties of the elements. The provenance data that include data for atomic spectroscopy, X-ray and gamma ray, radiation dosimetry, nuclear physics, and condensed matter physics may be found from the link under the source name. Ref: https://www.nist.gov/pml/atomic-spectra-database
This section provides all form of data related to element Gallium.
The element property data was retrieved from publications.