Gallium (Ga)
post-transition-metalSolid
Peso atômico padrão
69,723 uConfiguração eletrônica
[Ar] 4s2 3d10 4p1Ponto de fusão
29,76 °CPonto de ebulição
2203,85 °CDensidade
5910 kg/m³Estados de oxidação
−5, −4, −3, −2, −1, 0, +1, +2, +3Eletronegatividade (Pauling)
1,81Energia de ionização (1ª)
5,999302 eVAno da descoberta
1875Raio atômico
130 pmDetalhes
Gallium is a soft post-transition metal in group 13, chemically related to aluminium and indium. It is notable for melting just above room temperature, forming low-melting alloys, and supplying semiconductors through compounds such as gallium arsenide and gallium nitride. In nature it is dispersed rather than concentrated in its own ores, so it is recovered mainly as a by-product of aluminium and zinc processing.
It is one of four metals mercury, cesium, and rubidium which can be liquid near room temperature and, thus, can be used in high-temperature thermometers. It has one of the longest liquid ranges of any metal and has a low vapor pressure even at high temperatures.
There is a strong tendency for gallium to supercool below its freezing point. Therefore, seeding may be necessary to initiate solidification.
Ultra-pure gallium has a beautiful, silvery appearance, and the solid metal exhibits a conchoidal fracture similar to glass. The metal expands 3.1 percent on solidifying; therefore, it should not be stored in glass or metal containers, because they may break as the metal solidifies.
High-purity gallium is attacked only slowly by mineral acids.
The name derives from the Latin gallia for France. It was discovered in zinc blende by the French chemist Paul-Emile Lecoq de Boisbaudran in 1875. It was first isolated in 1878 by Lecoq de Boisbaudran and the French chemist Émile-Clément Jungflesch.
First proposed to exist by Dmitri Mendeleyev in 1871 based on gaps in his newly created Periodic Table of Elements, gallium was discovered spectroscopically by the French chemist Paul-Émile Lecoq de Boisbaudran in 1875. Later that same year, Lecoq was able to obtain pure gallium through the electrolysis of a solution of gallium hydroxide (Ga(OH)3) in potassium hydroxide (KOH). Trace amounts of gallium are found in diaspore, sphalerite, germanite and bauxite as well as in the byproducts of burning coal.
From the Latin word Gallia, France; also from Latin, gallus, a translation of "Lecoq," a cock. Predicted and described by Mendeleev as ekaaluminum, and discovered spectroscopically by Lecoq de Boisbaudran in 1875, who in the same year obtained the free metal by electrolysis of a solution of the hydroxide in KOH.
Pure gallium is a silvery, lustrous metal that is solid at ordinary room temperature but melts at about 30 °C. The solid is brittle enough to fracture, while the liquid readily wets many surfaces and can penetrate some metals, especially aluminium.
Gallium is used chiefly in compound semiconductors. Gallium arsenide (GaAs) is important in high-frequency electronics, optoelectronics, infrared light-emitting diodes, and some photovoltaic cells. Gallium nitride (GaN) is central to blue and ultraviolet light-emitting diodes, laser diodes, and efficient power electronics. Low-melting gallium alloys are used in thermometers, thermal interfaces, and specialized heat-transfer applications where mercury is undesirable. Radioisotopes such as ⁶⁷Ga and ⁶⁸Ga are used in diagnostic nuclear medicine.
Gallium melts near room temperature and has one of the largest liquid ranges of any metal, so it has found use in high temperature thermometers. Gallium easily forms alloys with most metals and has been used to create low melting alloys. Gallium is used as a doping material for semiconductors and has been used to produce solid-state items like transistors and light emitting diodes. Gallium arsenide (GaAs) can produce laser light directly from electricity. Large amounts of gallium trichloride (GaCl3) have been gathered to build the Gallium Neutrino Observatory, an observatory located in Italy built to study particles called neutrinos which are produced inside the sun during the process of nuclear fusion.
Gallium wets glass or porcelain and forms a brilliant mirror when it is painted on glass. It is widely used in doping semiconductors and producing solid-state devices such as transistors.
Magnesium gallate containing divalent impurities, such as Mn+2, is finding use in commercial ultraviolet-activated powder phosphors. Gallium arsenide is capable of converting electricity directly into coherent light. Gallium readily alloys with most metals, and has been used as a component in low-melting alloys.
Isotopes in Medicine
68Ga (with a half-life of 68 min) is a radioactive isotope that emits positrons, which are used to produce high-resolution imaging with positron emission tomography (PET). Unlike 18F, which is most commonly used, 68Ga is more easily produced using a cost-effective generator with the parent radionuclide 68Ge (with a half-life of 271 days) (Fig. IUPAC.31.1). Once produced, 68Ga easily couples to biomolecules (most commonly peptides) that target G-protein coupled receptors, which are over-expressed on human tumor cells. The labeled protein acts as a radioactive tracer for cancer diagnostics. PET images are often coupled with CT images to get a more complete picture of the body [256] I. Kayani, B. G. Conry, A. M. Groves, T. Win, J. Dickson, M. Caplin, J. B. Bomanji. J. Nucl. Med.50, 1927 (2009)., [257] M. Fani, J. P. André, H. R. Maecke. Contrast Media Mol. Imaging3, 67 (2008)., [258] G. J. Ehrhardt, M. J. Welch. J. Nucl. Med.19, 925 (1978)., [259] G. Ehrhardt, S. Wagner, M. J. Welch. J. Labelled Compd. Radiopharm.16, 111 (1979)., [260] M. V. Cantorias, S. D. Figueroa, T. P. Quinn, J. R. Lever, T. J. Hoffman, L. D. Watkinson, T. L. Carmack, C. S. Cutler. Nucl. Med. Biol.36, 505 (2009)., [261] J. C. Rold, T. L. Sieckman, G. L. Figueroa, S. D. Sublett, S. V. Engelbrecht, H. Cutler, C. S. Jurisson, S. S. Hoffman, T. J. Bottenus, B. N. Garrison. Trans. Am. Nucl. Soc.98, 802 (2008)., [262] J. Fitzsimmons, M. Fassbender, R. Atcher. J. Nucl. Med.48, 319 (2007).. Radiopharmaceutical 67Ga (with a half-life of 78 h) is a gamma-emitting isotope used in scintigraphy for medical imaging [263] S. M. Larson, P. B. Hoffer. “Normal patterns of localization”, in Gallium-67 Imaging, P. B. Hoffer, C. Bekerman, and R. E. Henkin (Eds.), John Wiley, New York (1978)., [264] A. Wirth, J. F. Seymour, R. J. Hicks, R. Ware, R. Fisher, M. Prince, M. P. MacManus, G. Ryan, H. Januszewicz, M. Wolf. Am. J. Med.112, 262 (2002)., [265] A. Vijayananthan, A. V. Arumugam, G. Kumar, D. Harichandra. Int. J. Biomed. Imaging4 (2), e23 (2008)..
Gallium most commonly adopts the +3 oxidation state, although lower-valent gallium chemistry is well established in specialized compounds. Gallium(III) oxide (Ga₂O₃) is a wide-band-gap oxide of growing interest for power and ultraviolet devices. Gallium arsenide (GaAs), gallium nitride (GaN), gallium phosphide (GaP), and gallium antimonide (GaSb) are important III-V semiconductors. Gallium(III) chloride (GaCl₃) is a Lewis acidic halide and forms many adducts. Gallium(III) salts often hydrolyze in water, reflecting the high charge density of Ga³⁺.
See more information at the Gallium compound page.
Compact gallium metal has low acute toxicity, but it can stain skin and damage aluminium parts by liquid-metal embrittlement. Dusts, fumes, and soluble gallium compounds require normal laboratory controls because toxicity depends strongly on compound form and exposure route. Gallium arsenide (GaAs) introduces additional concern from arsenic during machining, heating, or waste handling. Medical radioisotopes present isotope-specific radiation hazards.
Its toxicity appears to be of a low order, but should be handled with care until more data is available.
Gallium occurs at trace levels in many minerals, especially those associated with aluminium and zinc ores. It substitutes for chemically similar ions rather than forming abundant gallium minerals. Weathering and industrial processing can mobilize small amounts, but gallium is not a major nutrient and has no well-established biological role. Environmental concern is usually tied to mining residues, semiconductor waste, and associated elements such as arsenic rather than to metallic gallium alone.
Gallium supply is dominated by by-product recovery, especially from bauxite processing liquors and, to a lesser extent, zinc-processing streams. Because primary ores are not mined for gallium alone, output can be constrained by aluminium and zinc production, refinery technology, and purification capacity. Demand is driven mainly by semiconductor and optoelectronic materials, where high purity is essential. Recycling occurs from manufacturing scrap and some end-of-life material, but dispersed uses and complex devices limit complete recovery. Substitution is application-specific; silicon, silicon carbide, or other III-V compounds can replace gallium materials in some devices but not without design changes.
Gallium is often found as a trace element in diaspore, sphalerite, germanite, bauxite, and coal. Some flue dusts from burning coal have been shown to contain as much 1.5 percent gallium.
Gallium is a relatively rare element in the cosmos compared with lighter metals. Its stable isotopes, ⁶⁹Ga and ⁷¹Ga, are produced in stellar nucleosynthesis pathways involving neutron capture and related processes in evolved stars and supernova environments. In planetary materials it behaves as a moderately volatile, lithophile to chalcophile trace element and is used in geochemical studies of differentiation and volatility.
- Gallium expands on freezing, so solidification can break rigid containers.
- The liquid metal has an unusually wide liquid range before boiling.
- Gallium can diffuse into aluminium and make it crumble under stress.
- Natural gallium consists mainly of two stable isotopes, ⁶⁹Ga and ⁷¹Ga.
- Very high-purity gallium is needed for many semiconductor applications.
Imagens
Propriedades
Física
- Raio atômico (empírico)
- 130 pm Comparar Raio atômico (empírico) de todos os elementos →
- Raio covalente
- 122 pm Comparar Raio covalente de todos os elementos →
- Raio de van der Waals
- 187 pm Comparar Raio de van der Waals de todos os elementos →
- Raio metálico
- 125 pm Comparar Raio metálico de todos os elementos →
- Densidade
- 5910 kg/m³ Comparar Densidade de todos os elementos →
- Volume molar
- 0,0118 L/mol
- Fase nas CNTP
- Sólido Comparar Fase nas CNTP de todos os elementos →
- Ponto de fusão
- 29,76 °C Comparar Ponto de fusão de todos os elementos →
- Ponto de ebulição
- 2203,85 °C Comparar Ponto de ebulição de todos os elementos →
- Condutividade térmica
- 28,1 W/(m·K) Comparar Condutividade térmica de todos os elementos →
- Capacidade calorífica específica
- 0,373 J/(g·K) Comparar Capacidade calorífica específica de todos os elementos →
- Capacidade calorífica molar
- 26,03 J/(mol·K) Comparar Capacidade calorífica molar de todos os elementos →
- Estrutura cristalina
- Ortorrômbica Comparar Estrutura cristalina de todos os elementos →
Química
- Eletronegatividade (Pauling)
- 1,81 Comparar Eletronegatividade (Pauling) de todos os elementos →
- Eletronegatividade (Allen)
- 1,756
- Afinidade eletrônica
- 0,3 eV
- Energia de ionização (1ª)
- 5,999302 eV Comparar Energia de ionização (1ª) de todos os elementos →
- Energia de ionização (2ª)
- 20,515211 eV Comparar Energia de ionização (2ª) de todos os elementos →
- Energia de ionização (3ª)
- 30,725866 eV Comparar Energia de ionização (3ª) de todos os elementos →
- Energia de ionização (4ª)
- 63,241218 eV Comparar Energia de ionização (4ª) de todos os elementos →
- Energia de ionização (5ª)
- 86,010296 eV Comparar Energia de ionização (5ª) de todos os elementos →
- Estados de oxidação
- −5, −4, −3, −2, −1, 0, +1, +2, +3 Comparar Estados de oxidação de todos os elementos →
- Elétrons de valência
- 3 Comparar Elétrons de valência de todos os elementos →
- Configuração eletrônica
- [Ar] 4s2 3d10 4p1
Termodinâmica
- Ponto triplo (temperatura)
- 29,7666 °C
- Calor de fusão
- 0,05793647 eV Comparar Calor de fusão de todos os elementos →
- Calor de vaporização
- 2,653262 eV Comparar Calor de vaporização de todos os elementos →
- Calor de sublimação
- 2,808727 eV
- Calor de atomização
- 2,808727 eV
- Entalpia de atomização
- 2,818676 eV
Nuclear
- Prótons
- 31 Comparar Prótons de todos os elementos →
- Nêutrons
- 38 Comparar Nêutrons de todos os elementos →
- Isótopos conhecidos
- 33 Comparar Isótopos conhecidos de todos os elementos →
- Isótopos estáveis
- 2 Comparar Isótopos estáveis de todos os elementos →
- Isótopo mais estável
- Ga-69
- Ano da descoberta
- 1875
Abundância
- Abundância (crosta terrestre)
- 19 mg/kg Comparar Abundância (crosta terrestre) de todos os elementos →
- Abundância (oceano)
- 3 × 10−5 mg/L Comparar Abundância (oceano) de todos os elementos →
Estrutura cristalina
- Constante de rede a
- 451 pm
Estrutura eletrônica
- Elétrons por camada
- 2, 8, 18, 3 Comparar Elétrons por camada de todos os elementos →
Identificadores
- Número CAS
- 7440-55-3 Comparar Número CAS de todos os elementos →
- Símbolo de termo
- 2P°1/2
- InChI
- InChI=1S/Ga
- Chave InChI
- GYHNNYVSQQEPJS-UHFFFAOYSA-N
Configuração eletrônica Medido
Ga: 3d¹⁰ 4s² 4p¹[Ar] 3d¹⁰ 4s² 4p¹1s² 2s² 2p⁶ 3s² 3p⁶ 3d¹⁰ 4s² 4p¹Modelo atômico
Os isótopos alteram o número de nêutrons, a massa e a estabilidade — não a configuração eletrônica de um átomo neutro.
Modelo atômico esquemático, sem escala.
Assinatura atômica
Espectro de emissão / absorção
Distribuição isotópica
| Número de massa | Massa atômica (u) | Abundância natural | Meia-vida |
|---|---|---|---|
| 69 Estável | 68,9255735 ± 0,0000013 | 60,1080% | Estável |
| 71 Estável | 70,92470258 ± 0,00000087 | 39,8920% | Estável |
Fase / Estado
Motivo: 4,8 °C abaixo do ponto de fusão (29,76 °C)
Esquemático, sem escala
Pontos de transição de fase
Energias de transição
Energia necessária para fundir 1 mol no ponto de fusão
Energia necessária para vaporizar 1 mol no ponto de ebulição
Energia necessária para sublimar 1 mol no ponto de sublimação
Densidade
Em condições padrão
Em condições padrão
Avançado
Espectros atômicos
Mostrando 10 de 31. Ordenado por carga do íon (ordem crescente).
Dados de linhas disponíveis ?
| Íon | Carga | Total de linhas | Probabilidades de transição | Designações dos níveis |
|---|---|---|---|---|
| Ga I | 0 | 342 | 23 | 342 |
| Ga II | +1 | 176 | 10 | 176 |
| Ga III | +2 | 113 | 2 | 113 |
| Ga IV | +3 | 594 | 0 | 594 |
| Ga V | +4 | 185 | 0 | 185 |
| Ga VI | +5 | 501 | 0 | 501 |
| Ga VII | +6 | 451 | 0 | 451 |
Dados de níveis disponíveis ?
| Íon | Carga | Níveis |
|---|---|---|
| Ga I | 0 | 262 |
| Ga II | +1 | 96 |
| Ga III | +2 | 61 |
| Ga IV | +3 | 192 |
| Ga V | +4 | 92 |
| Ga VI | +5 | 158 |
| Ga VII | +6 | 181 |
| Ga VIII | +7 | 2 |
| Ga IX | +8 | 2 |
| Ga X | +9 | 2 |
Raios iônicos
| Carga | Coordenação | Spin | Raio |
|---|---|---|---|
| +3 | 4 | N/D | 47 pm |
| +3 | 5 | N/D | 55.00000000000001 pm |
| +3 | 6 | N/D | 62 pm |
Compostos
Isótopos (2)
| Número de massa | Massa atômica (u) | Abundância natural | Meia-vida | Modo de decaimento | |
|---|---|---|---|---|---|
| 69 Estável | 68,9255735 ± 0,0000013 | 60,1080% ± 0,0090% | Estável | stable | |
| 71 Estável | 70,92470258 ± 0,00000087 | 39,8920% ± 0,0090% | Estável | stable |
Linhas espectrais
| Comprimento de onda (nm) | Intensidade | Estágio de ionização | Tipo | Transição | Exatidão | Fonte | |
|---|---|---|---|---|---|---|---|
| 417.33 nm | N/D | ID 486 | emission | 3s2.3p3 2P* → 3s2.3p3 2P* | Medida | NIST | |
| 424.0525 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.70p 2P* | Medida | NIST | |
| 424.0525 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.70p 2P* | Medida | NIST | |
| 424.0651 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.69p 2P* | Medida | NIST | |
| 424.0651 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.69p 2P* | Medida | NIST | |
| 424.08 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.68p 2P* | Medida | NIST | |
| 424.08 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.68p 2P* | Medida | NIST | |
| 424.0924 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.67p 2P* | Medida | NIST | |
| 424.0924 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.67p 2P* | Medida | NIST | |
| 424.1098 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.66p 2P* | Medida | NIST | |
| 424.1098 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.66p 2P* | Medida | NIST | |
| 424.1257 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.65p 2P* | Medida | NIST | |
| 424.1257 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.65p 2P* | Medida | NIST | |
| 424.1406 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.64p 2P* | Medida | NIST | |
| 424.1406 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.64p 2P* | Medida | NIST | |
| 424.1588 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.63p 2P* | Medida | NIST | |
| 424.1588 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.63p 2P* | Medida | NIST | |
| 424.1761 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.62p 2P* | Medida | NIST | |
| 424.1761 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.62p 2P* | Medida | NIST | |
| 424.1948 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.61p 2P* | Medida | NIST | |
| 424.1948 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.61p 2P* | Medida | NIST | |
| 424.2157 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.60p 2P* | Medida | NIST | |
| 424.2157 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.60p 2P* | Medida | NIST | |
| 424.2367 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.59p 2P* | Medida | NIST | |
| 424.2367 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.59p 2P* | Medida | NIST | |
| 424.2582 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.58p 2P* | Medida | NIST | |
| 424.2582 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.58p 2P* | Medida | NIST | |
| 424.2826 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.57p 2P* | Medida | NIST | |
| 424.2826 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.57p 2P* | Medida | NIST | |
| 424.3887 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.53p 2P* | Medida | NIST | |
| 424.3887 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.53p 2P* | Medida | NIST | |
| 424.4204 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.52p 2P* | Medida | NIST | |
| 424.4204 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.52p 2P* | Medida | NIST | |
| 424.4531 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.51p 2P* | Medida | NIST | |
| 424.4531 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.51p 2P* | Medida | NIST | |
| 424.4886 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.50p 2P* | Medida | NIST | |
| 424.4886 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.50p 2P* | Medida | NIST | |
| 424.5261 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.49p 2P* | Medida | NIST | |
| 424.5261 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.49p 2P* | Medida | NIST | |
| 424.5675 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.48p 2P* | Medida | NIST | |
| 424.5675 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.48p 2P* | Medida | NIST | |
| 424.6112 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.47p 2P* | Medida | NIST | |
| 424.6112 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.47p 2P* | Medida | NIST | |
| 424.6563 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.46p 2P* | Medida | NIST | |
| 424.6563 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.46p 2P* | Medida | NIST | |
| 424.7046 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.45p 2P* | Medida | NIST | |
| 424.7046 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.45p 2P* | Medida | NIST | |
| 424.7569 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.44p 2P* | Medida | NIST | |
| 424.7569 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.44p 2P* | Medida | NIST | |
| 424.8143 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.43p 2P* | Medida | NIST | |
| 424.8143 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.43p 2P* | Medida | NIST | |
| 424.8743 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.42p 2P* | Medida | NIST | |
| 424.8743 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.42p 2P* | Medida | NIST | |
| 424.94 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.41p 2P* | Medida | NIST | |
| 424.94 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.41p 2P* | Medida | NIST | |
| 425.4789 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.34d 2D | Medida | NIST | |
| 425.4799 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.34d 2D | Medida | NIST | |
| 426.035 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.30d 2D | Medida | NIST | |
| 426.0365 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.30d 2D | Medida | NIST | |
| 426.6348 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.27d 2D | Medida | NIST | |
| 426.6367 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.27d 2D | Medida | NIST | |
| 427.1688 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.25d 2D | Medida | NIST | |
| 427.1712 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.25d 2D | Medida | NIST | |
| 427.8589 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.23d 2D | Medida | NIST | |
| 427.8621 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.23d 2D | Medida | NIST | |
| 428.7731 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.21d 2D | Medida | NIST | |
| 428.7774 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.21d 2D | Medida | NIST | |
| 429.3459 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.20d 2D | Medida | NIST | |
| 429.3507 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.20d 2D | Medida | NIST | |
| 430.0203 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.19d 2D | Medida | NIST | |
| 430.026 nm | N/D | Ga I | emission | 4s2.5s 2S → 4s2.19d 2D | Medida | NIST | |
| 448.84 nm | N/D | ID 505 | emission | 5p 2P* → 5d 2D | Medida | NIST | |
| 459.16 nm | N/D | ID 505 | emission | 5s 2S → 5p 2P* | Medida | NIST | |
| 557 nm | N/D | ID 482 | emission | 1s.5s 3S → 1s.5p 3P* | Medida | NIST | |
| 567.7 nm | N/D | ID 498 | emission | 3s2.3p2 3P → 3s2.3p2 3P | Medida | NIST | |
| 587 nm | N/D | ID 482 | emission | 1s.4p 3P* → 1s.4d 3D | Medida | NIST | |
| 675 nm | N/D | ID 486 | emission | 3s2.3p3 2D* → 3s2.3p3 2D* | Medida | NIST | |
| 706.7 nm | N/D | ID 505 | emission | 4p 2P* → 4d 2D | Medida | NIST |
Propriedades ampliadas
Raios covalentes (dados ampliados)
- Raio covalente (Pyykkö)
- 124 pm
- Raio covalente (Pyykkö, ligação dupla)
- 117 pm
- Raio covalente (Pyykkö, ligação tripla)
- 121 pm
Raios de van der Waals
- Bondi
- 187 pm
- Batsanov
- 210 pm
- Alvarez
- 232 pm
- UFF
- 438,3 pm
- MM3
- 246 pm
- Dreiding
- 439 pm
Raios atômicos e metálicos
- Raio atômico (Rahm)
- 233 pm
- Raio metálico (C12)
- 140 pm
Escalas de numeração
- Mendeleev
- 83
- Pettifor
- 81
- Glawe
- 79
Escalas de eletronegatividade
- Ghosh
- 0
- Miedema
- 4
- Gunnarsson–Lundqvist
- 3
- Robles–Bartolotti
- 3
Polarizabilidade e dispersão
- Polarizabilidade dipolar
- 50 a.u.
- Polarizabilidade dipolar (incerteza)
- 3 a.u.
- C₆
- 498 Ha·Bohr6
- C₆ (Gould–Bučko)
- 456 Ha·Bohr6
Parâmetros de Miedema
- Volume molar de Miedema
- 11,82 cm3/mol
- Densidade eletrônica de Miedema
- 2
Risco de abastecimento e economia
- Concentração da produção
- 54
- Risco relativo de abastecimento
- 8
- Estabilidade política (maior produtor)
- 24
Transições de fase e alótropos
| Ponto de fusão | 302,91 K |
| Ponto de ebulição | 2502,15 K |
| Ponto triplo (temperatura) | 302,92 K |
Categorias de estados de oxidação
Dados de referência avançados
Constantes de blindagem (8)
| n | Orbital | σ |
|---|---|---|
| 1 | s | 0,6906 |
| 2 | p | 3,9092 |
| 2 | s | 8,401 |
| 3 | d | 15,9067 |
| 3 | p | 14,7964 |
| 3 | s | 14,0038 |
| 4 | p | 24,7784 |
| 4 | s | 23,9332 |
Detalhes dos raios cristalinos (3)
| Carga | CN | Spin | rcrystal (pm) | Origem |
|---|---|---|---|---|
| 3 | IV | 61 | ||
| 3 | V | 69 | ||
| 3 | VI | 76 | from r^3 vs V plots, |
Modos de decaimento dos isótopos (51)
| Isótopo | Modo | Intensidade |
|---|---|---|
| 56 | p | — |
| 57 | p | — |
| 58 | p | — |
| 59 | p | — |
| 60 | B+ | 100% |
| 60 | B+p | 1,6% |
| 60 | B+A | 0% |
| 61 | B+ | 100% |
| 61 | B+p | 0,3% |
| 62 | B+ | 100% |
Fatores de espalhamento de raios X (506)
| Energia (eV) | f₁ | f₂ |
|---|---|---|
| 10 | — | 2,98527 |
| 10,1617 | — | 2,98141 |
| 10,3261 | — | 2,97756 |
| 10,4931 | — | 2,9737 |
| 10,6628 | — | 2,96986 |
| 10,8353 | — | 2,96602 |
| 11,0106 | — | 2,95695 |
| 11,1886 | — | 2,90859 |
| 11,3696 | — | 2,86103 |
| 11,5535 | — | 2,81425 |
Dados adicionais
Estimated Crustal Abundance
The estimated element abundance in the earth's crust.
1.9×101 milligrams per kilogram
Referências (1)
Estimated Oceanic Abundance
The estimated element abundance in the earth's oceans.
3×10-5 milligrams per liter
Referências (1)
Sources
Sources of this element.
Gallium is often found as a trace element in diaspore, sphalerite, germanite, bauxite, and coal. Some flue dusts from burning coal have been shown to contain as much 1.5 percent gallium.
Referências (1)
- [6] Gallium https://periodic.lanl.gov/31.shtml
Referências
(9)
Data deposited in or computed by PubChem
The half-life and atomic mass data was provided by the Atomic Mass Data Center at the International Atomic Energy Agency.
Element data are cited from the Atomic weights of the elements (an IUPAC Technical Report). The IUPAC periodic table of elements can be found at https://iupac.org/what-we-do/periodic-table-of-elements/. Additional information can be found within IUPAC publication doi:10.1515/pac-2015-0703 Copyright © 2020 International Union of Pure and Applied Chemistry.
The information are cited from Pure Appl. Chem. 2018; 90(12): 1833-2092, https://doi.org/10.1515/pac-2015-0703.
Thomas Jefferson National Accelerator Facility (Jefferson Lab) is one of 17 national laboratories funded by the U.S. Department of Energy. The lab's primary mission is to conduct basic research of the atom's nucleus using the lab's unique particle accelerator, known as the Continuous Electron Beam Accelerator Facility (CEBAF). For more information visit https://www.jlab.org/
The periodic table at the LANL (Los Alamos National Laboratory) contains basic element information together with the history, source, properties, use, handling and more. The provenance data may be found from the link under the source name.
The periodic table contains NIST's critically-evaluated data on atomic properties of the elements. The provenance data that include data for atomic spectroscopy, X-ray and gamma ray, radiation dosimetry, nuclear physics, and condensed matter physics may be found from the link under the source name. Ref: https://www.nist.gov/pml/atomic-spectra-database
This section provides all form of data related to element Gallium.
The element property data was retrieved from publications.