Boron (B)
metalloidSolid
ਮਿਆਰੀ ਪਰਮਾਣੂ ਭਾਰ
10.81 u [10.806, 10.821]ਇਲੈਕਟ੍ਰਾਨ ਵਿਨਿਆਸ
[He] 2s2 2p1ਪਿਘਲਣ ਦਰਜਾ
2074.85 °Cਉਬਾਲ ਦਰਜਾ
3999.85 °Cਘਣਤਾ
2370 kg/m³ਆਕਸੀਕਰਨ ਅਵਸਥਾਵਾਂ
−5, −1, 0, +1, +2, +3ਬਿਜਲਈ ਰਿਣਾਤਮਕਤਾ (ਪਾਲਿੰਗ)
2.04ਆਇਨੀਕਰਨ ਊਰਜਾ (ਪਹਿਲੀ)
8.298019 eVਖੋਜ ਦਾ ਸਾਲ
1808ਪਰਮਾਣੂ ਅਰਧ-ਵਿਆਸ
85 pmਵੇਰਵੇ
Boron is a light metalloid in group 13, notable for electron-deficient bonding and a rich cluster chemistry. It occurs naturally only in compounds, mainly as borates in evaporite minerals and brines. Elemental boron is difficult to prepare in high purity and has several allotropes built from B₁₂ icosahedra. Technologically, boron is most important through borate minerals, borosilicate glass, detergents, ceramics, fertilizers, and neutron-absorbing materials.
An element of group 13 of the periodic table. There are two allotropes, amorphous boron is a brown power, but metallic boron is black. The metallic form is hard (9.3 on Mohs' scale) and a bad conductor in room temperatures. It is never found free in nature. Boron-10 is used in nuclear reactor control rods and shields. It was discovered in 1808 by Sir Humphry Davy and by J.L. Gay-Lussac and L.J. Thenard.
The name derives from the Arabic buraq for "white". Although its compounds were known for thousands of years, it was not isolated until 1808 by the French chemists Louis-Joseph Gay-Lussac and Louis-Jacques Thenard.
Boron was discovered by Joseph-Louis Gay-Lussac and Louis-Jaques Thénard, French chemists, and independently by Sir Humphry Davy, an English chemist, in 1808. They all isolated boron by combining boric acid (H3BO3) with potassium. Today, boron is obtained by heating borax (Na2B4O7·10H2O) with carbon, although other methods are used if high-purity boron is required.
From the Arabic word Buraq, Persian Burah. Boron compounds have been known for thousands of years, but the element was not discovered until 1808 by Sir Humphry Davy and by Gay-Lussac and Thenard.
Pure boron is usually encountered as a dark brown to black, hard, brittle solid with a semiconducting character. Amorphous boron is a powder, while crystalline allotropes have a dark, lustrous appearance; their properties depend strongly on purity and structure.
Most boron use is in compounds rather than the free element. Borates are used in glass fiber insulation, borosilicate glass, enamels, ceramics, detergents, flame retardants, and micronutrient fertilizers. Boron carbide, B₄C, is used in armor, abrasives, and control rods because it is very hard and absorbs neutrons. Elemental boron is used in small amounts in specialty alloys, pyrotechnic compositions, and semiconductor work. The isotope ¹⁰B is important in neutron detection, reactor control, and boron neutron capture therapy research and applications.
Boron is used in pyrotechnics and flares to produce a green color. Boron has also been used in some rockets as an ignition source. Boron-10, one of the naturally occurring isotopes of boron, is a good absorber of neutrons and is used in the control rods of nuclear reactors, as a radiation shield and as a neutron detector. Boron filaments are used in the aerospace industry because of their high-strength and lightweight.
Boron forms several commercially important compounds. The most important boron compound is sodium borate pentahydrate (Na2B4O7·5H2O). Large amounts of this compound are used in the manufacture of fiberglass insulation and sodium perborate bleach. The second most important compound is boric acid (H3BO3), which is used to manufacture textile fiberglass and is used in cellulose insulation as a flame retardant. Sodium borate decahydrate (Na2B4O7·10H2O), better known as borax, is the third most important boron compound. Borax is used in laundry products and as a mild antiseptic. Borax is also a key ingredient in a substance known as Oobleck, a strange material 6th grade students experiment with while participating in Jefferson Lab's BEAMS program. Other boron compounds are used to make borosilicate glasses, enamels for covering steel and as a potential medicine for treating arthritis.
Amorphous boron is used in pyrotechnic flares to provide a distinctive green color, and in rockets as an igniter.
By far the most commercially important boron compound in terms of dollar sales is Na2B4O7 • 5H2O. This pentahydrate is used in very large quantities in the manufacture of insulation fiberglass and sodium perborate bleach.
Boric acid is also an important boron compound with major markets in textile products. Use of borax as a mild antiseptic is minor in economical terms. Boron compounds are also extensively used in the manufacture of borosilicate glasses. Other boron compounds show promise in treating arthritis.
The isotope boron-10 is used as a control for nuclear reactors, as a shield for nuclear radiation, and in instruments used for detecting neutrons. Boron nitride has remarkable properties and can be used to make a material as hard as diamond. The nitride also behaves like an electrical insulator but conducts heat like a metal.
Boron also has lubricating properties similar to graphite. The hydrides are easily oxidized with considerable energy liberation, and have been studied for use as rocket fuels. Demand is increasing for boron filaments, a high-strength, lightweight material chiefly employed for advanced aerospace structures.
Boron is similar to carbon in that it has a capacity to form stable covalently bonded molecular networks. Carbonates, metalloboranes, phosphacarboranes, and other families comprise thousands of compounds.
Isotopes in Earth/Planetary Science
Molecules, atoms, and ions of the stable isotopes of boron possess slightly different physical and chemical properties, and they commonly will be fractionated during physical, chemical, and biological processes, giving rise to variations in isotopic abundances and in atomic weights. Natural terrestrial materials show a substantial variation in boron isotopic abundance (Fig. IUPAC.5.1). The relative abundances of 10B and 11B have been used in a variety of environmental tracer applications [51] A. Vengosh, K. G. Heumann, S. Jaraske, R. Kasher. Environ. Sci. Technol.28, 1968 (1994)., [52] A. Vengosh. Biol. Trace Elem. Res.66, 145 (1998).. The isotope-amount ratio n(11B)/n(10B) of boron in a water sample depends on the source of the water and region through which the water flows, and it may also be affected by some types of contamination, such as dissolved borate in domestic wastewater. Different water sources may have their own distinct boron isotopic composition, e.g. seawater versus water from continental sources (Fig. IUPAC.5.1).
Isotopes in Industry
The large value of the absorption cross section of 10B for thermal neutrons makes this isotope useful for counting neutrons. 10B is being studied as a potential replacement for 3He in radiation detectors [32] G. V. Jean. Advancing Hidden Nuclear Material Detection, National Defense Industrial Association (2014), Feb. 28; http://www.nationaldefensemagazine.org/archive/2010/December/Pages/AdvancingHiddenNuclearMaterialDetection.aspx., [53] L. Foulke. Director of Nuclear Education Outreach, University of Pittsburgh. Introduction to Reactivity and Reactor Control, IAEA Workshop on Desktop Simulation (2014), Feb. 22; http://www.iaea.org/NuclearPower/Downloadable/Meetings/2011/2011-10-03-10-14-WS-NPTD/Foulke.1-Introduction.Reactivity.pdf., [54] P. Frame. Boron Trifluoride (BF3) Neutron Detectors, Oak Ridge Associated Universities (2014), Feb. 22; http://www.orau.org/PTP/collection/proportional%20counters/bf3info.htm.. The large thermal absorption cross section of 10B makes the isotope useful in control rods (Fig. IUPAC.5.2) [55] United States Nuclear Regulatory Commission. Pressurized Water Reactors, U.S. Nuclear Regulatory Commission (2014), Feb. 22; http://www.nrc.gov/reactors/pwrs.html..
Isotopes in Medicine
10B has a high thermal neutron absorption cross section and can readily absorb neutrons via the reaction 10B+n→ 7Li+α. The alpha particles resulting from this reaction carry away a relatively large kinetic energy and are useful for the treatment of malignant tumors in cancer patients [56] D. Gabel. Radiother Oncol.30, 199 (1994)., [57] D. N. Slatkin. Neutron News1, 25 (1990)., [58] R. F. Barth, J. A. Coderre, M. C. G. Vicente, T. E. Blue. Clin. Cancer Res.11, 3987 (2005)..
Boron commonly shows the +3 oxidation state, but its bonding is often better described by electron-deficient multicenter structures. Boric acid, H₃BO₃, is a weak Lewis acid in water and a precursor to many borates. Borax, Na₂B₄O₇·10H₂O, is a major industrial borate. Boron trioxide, B₂O₃, is a glass-forming oxide. Boron trifluoride, BF₃, is a strong Lewis acid used in synthesis, while diborane, B₂H₆, illustrates boron hydride cluster chemistry. Boron nitride, BN, occurs in graphite-like and diamond-like forms with useful thermal and mechanical properties.
See more information at the Boron compound page.
Elemental boron is not highly toxic in compact form, but fine powders can irritate eyes, skin, and the respiratory tract and may be combustible under some conditions. Soluble borates and boric acid, H₃BO₃, can be harmful at sufficient dose, especially with repeated or high exposure. Boron trifluoride, BF₃, and diborane, B₂H₆, are far more hazardous: the former is corrosive and toxic, and the latter is toxic and flammable. Neutron-absorbing ¹⁰B is stable and is not itself radioactive.
Elemental boron and the borates are not considered to be toxic, and they do not require special care in handling. However, some of the more exotic boron hydrogen compounds are definitely toxic and do require care.
Boron is a natural trace element in rocks, soils, seawater, geothermal waters, and evaporite deposits. Weathering releases borate species that are mobile in water, especially under neutral to alkaline conditions. It is an essential micronutrient for higher plants, but the margin between deficiency and toxicity can be narrow in sensitive crops. Natural and industrial sources include volcanic emissions, seawater aerosols, mining, glass manufacture, detergents, and irrigation return flows.
Boron is supplied almost entirely from borate minerals and boron-rich brines, not from mining elemental boron. Major commercial materials include borax, kernite, ulexite, and colemanite, which are refined into boric acid, H₃BO₃, borax, Na₂B₄O₇·10H₂O, and other borates. Demand is led by glass, fiberglass, ceramics, detergents, agriculture, and specialty chemical uses. High-purity elemental boron and isotopically enriched ¹⁰B are much smaller specialty markets, with enrichment adding significant cost. Recycling is limited because boron is often dispersed in glass, ceramics, or formulations.
The element is not found free in nature, but occurs as orthoboric acid usually found in certain volcanic spring waters and as borates in boron and colemantie.
Important sources of boron are ore rasorite (kernite) and tincal (borax ore). Both of these ores are found in the Mojave Desert. Tincal is the most important source of boron from the Mojave. Extensive borax deposits are also found in Turkey.
Boron exists naturally as 19.78% 10B isotope and 80.22% 11B isotope. High-purity crystalline boron may be prepared by the vapor phase reduction of boron trichloride or tribromide with hydrogen on electrically heated filaments. The impure or amorphous, boron, a brownish-black powder, can be obtained by heating the trioxide with magnesium powder.
Boron of 99.9999% purity has been produced and is available commercially. Elemental boron has an energy band gap of 1.50 to 1.56 eV, which is higher than that of either silicon or germanium.
Boron is rare in the universe compared with neighboring light elements. It is not made efficiently by ordinary stellar fusion and is readily destroyed at stellar interior temperatures. Most cosmic boron is attributed to spallation reactions in which cosmic rays fragment heavier nuclei such as carbon, nitrogen, and oxygen. In the Solar System it is concentrated mainly in crustal and evaporitic materials rather than metallic or volatile reservoirs.
- Natural boron is mainly a mixture of ¹⁰B and ¹¹B.
- The large neutron-capture cross section of ¹⁰B gives boron unusual nuclear importance for a light element.
- Many crystalline boron structures are based on B₁₂ icosahedra rather than simple close packing.
- Boron deficiency and boron toxicity can both occur in agriculture.
- Borosilicate glass resists thermal shock partly because boron lowers thermal expansion.
- Boron carbide, B₄C, is one of the hardest widely used ceramic materials.
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- [He] 2s2 2p1
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- 5.855833 eV
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- 5.855833 eV
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- 5.855833 eV
ਨਾਭਿਕੀ
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- B-11
- ਖੋਜ ਦਾ ਸਾਲ
- 1808
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- ਟਰਮ ਪ੍ਰਤੀਕ
- 2P°1/2
- InChI
- InChI=1S/B
- InChI ਕੁੰਜੀ
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N
ਇਲੈਕਟ੍ਰਾਨ ਵਿਨਿਆਸ ਮਾਪਿਆ
B: 2s² 2p¹[He] 2s² 2p¹1s² 2s² 2p¹ਪਰਮਾਣੂ ਮਾਡਲ
ਸਮਸਥਾਨਿਕ ਨਿਊਟ੍ਰਾਨਾਂ ਦੀ ਗਿਣਤੀ, ਪੁੰਜ ਅਤੇ ਸਥਿਰਤਾ ਬਦਲਦੇ ਹਨ — ਉਦਾਸੀਨ ਪਰਮਾਣੂ ਦਾ ਇਲੈਕਟ੍ਰਾਨ ਵਿਨਿਆਸ ਨਹੀਂ।
ਸੰਕੇਤਕ ਪਰਮਾਣੂ ਮਾਡਲ, ਪੈਮਾਨੇ ਅਨੁਸਾਰ ਨਹੀਂ।
ਪਰਮਾਣੂ ਪਛਾਣ-ਚਿੰਨ੍ਹ
ਨਿਕਾਸ / ਅਵਸ਼ੋਸ਼ਣ ਸਪੈਕਟ੍ਰਮ
ਸਮਸਥਾਨਿਕ ਵੰਡ
| ਪੁੰਜ ਸੰਖਿਆ | ਪਰਮਾਣੂ ਪੁੰਜ (u) | ਕੁਦਰਤੀ ਪ੍ਰਚੁਰਤਾ | ਅਰਧ-ਆਯੂ |
|---|---|---|---|
| 10 ਸਥਿਰ | 10.01293695 ± 0.00000041 | 19.9000% | ਸਥਿਰ |
| 11 ਸਥਿਰ | 11.00930536 ± 0.00000045 | 80.1000% | ਸਥਿਰ |
ਫੇਜ਼ / ਅਵਸਥਾ
ਕਾਰਨ: ਪਿਘਲਣ ਦਰਜੇ (2074.85 °C) ਤੋਂ 2049.8 °C ਘੱਟ
ਸੰਕੇਤਕ, ਪੈਮਾਨੇ ਅਨੁਸਾਰ ਨਹੀਂ
ਅਵਸਥਾ ਪਰਿਵਰਤਨ ਬਿੰਦੂ
ਸੰਕ੍ਰਮਣ ਊਰਜਾਵਾਂ
ਪਿਘਲਣ ਦਰਜੇ 'ਤੇ 1 mol ਨੂੰ ਪਿਘਲਾਉਣ ਲਈ ਲੋੜੀਂਦੀ ਊਰਜਾ
ਉਬਾਲ ਦਰਜੇ 'ਤੇ 1 mol ਦੇ ਵਾਸ਼ਪੀਕਰਨ ਲਈ ਲੋੜੀਂਦੀ ਊਰਜਾ
ਉਰਧਪਾਤਨ ਦਰਜੇ 'ਤੇ 1 mol ਦੇ ਉਰਧਪਾਤਨ ਲਈ ਲੋੜੀਂਦੀ ਊਰਜਾ
ਘਣਤਾ
ਮਿਆਰੀ ਹਾਲਤਾਂ 'ਤੇ
ਮਿਆਰੀ ਹਾਲਤਾਂ 'ਤੇ
ਪਰਮਾਣੂ ਸਪੈਕਟ੍ਰਮ
ਉਪਲਬਧ ਸਪੈਕਟ੍ਰਮੀ ਰੇਖਾਵਾਂ ?
| ਆਇਨ | ਆਵੇਸ਼ | ਕੁੱਲ ਰੇਖਾਵਾਂ | ਸੰਕ੍ਰਮਣ ਸੰਭਾਵਨਾਵਾਂ | ਪੱਧਰਾਂ ਦੇ ਨਾਮਾਂਕਨ |
|---|---|---|---|---|
| B I | 0 | 371 | 269 | 371 |
| 11B I ਸਮਸਥਾਨਿਕ | 0 | 53 | 0 | 53 |
| 10B I ਸਮਸਥਾਨਿਕ | 0 | 11 | 0 | 11 |
| B II | +1 | 592 | 435 | 592 |
| 10B II ਸਮਸਥਾਨਿਕ | +1 | 9 | 0 | 9 |
| 11B II ਸਮਸਥਾਨਿਕ | +1 | 9 | 0 | 9 |
| B III | +2 | 390 | 106 | 390 |
| B IV | +3 | 478 | 234 | 478 |
| B V | +4 | 258 | 240 | 258 |
ਉਪਲਬਧ ਊਰਜਾ ਪੱਧਰ ?
| ਆਇਨ | ਆਵੇਸ਼ | ਪੱਧਰ |
|---|---|---|
| B I | 0 | 125 |
| 11B I ਸਮਸਥਾਨਿਕ | 0 | 69 |
| 10B I ਸਮਸਥਾਨਿਕ | 0 | 29 |
| B II | +1 | 157 |
| 10B II ਸਮਸਥਾਨਿਕ | +1 | 10 |
| 11B II ਸਮਸਥਾਨਿਕ | +1 | 10 |
| B III | +2 | 150 |
| B IV | +3 | 174 |
| B V | +4 | 101 |
ਆਇਨਿਕ ਅਰਧ-ਵਿਆਸ
| ਆਵੇਸ਼ | ਉਪਸਹਿ-ਸੰਯੋਜਨ | ਸਪਿਨ | ਅਰਧ-ਵਿਆਸ |
|---|---|---|---|
| +3 | 3 | ਉਪਲਬਧ ਨਹੀਂ | 1 pm |
| +3 | 4 | ਉਪਲਬਧ ਨਹੀਂ | 11 pm |
| +3 | 6 | ਉਪਲਬਧ ਨਹੀਂ | 27 pm |
ਯੋਗਿਕ
ਸਮਸਥਾਨਿਕ (2)
| ਪੁੰਜ ਸੰਖਿਆ | ਪਰਮਾਣੂ ਪੁੰਜ (u) | ਕੁਦਰਤੀ ਪ੍ਰਚੁਰਤਾ | ਅਰਧ-ਆਯੂ | ਖ਼ੈ ਦੀ ਵਿਧੀ | |
|---|---|---|---|---|---|
| 10 ਸਥਿਰ | 10.01293695 ± 0.00000041 | 19.9000% ± 0.7000% | ਸਥਿਰ | stable | |
| 11 ਸਥਿਰ | 11.00930536 ± 0.00000045 | 80.1000% ± 0.7000% | ਸਥਿਰ | stable |
ਸਪੈਕਟ੍ਰਮੀ ਰੇਖਾਵਾਂ
| ਤਰੰਗ-ਲੰਬਾਈ (nm) | ਤੀਬਰਤਾ | ਆਇਨੀਕਰਨ ਪੜਾਅ | ਕਿਸਮ | ਸੰਕ੍ਰਮਣ | ਸ਼ੁੱਧਤਾ | ਸਰੋਤ | |
|---|---|---|---|---|---|---|---|
| 391.482 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.2p 1P* → 1s2.2p2 3P | ਮਾਪਿਆ | NIST | |
| 391.687 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.2p 1P* → 1s2.2p2 3P | ਮਾਪਿਆ | NIST | |
| 391.817 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.2p 1P* → 1s2.2p2 3P | ਮਾਪਿਆ | NIST | |
| 394.447 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2p.3d 3F* → 1s2.2p.4f 3F | ਮਾਪਿਆ | NIST | |
| 394.587 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2p.3d 3F* → 1s2.2p.4f 3F | ਮਾਪਿਆ | NIST | |
| 394.82 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2p.3d 3F* → 1s2.2p.4f 3F | ਮਾਪਿਆ | NIST | |
| 395.038 nm | 18 | B II | emission | 1s2.2p.3d 1D* → 1s2.2p.4f 1F | ਮਾਪਿਆ | NIST | |
| 395.1698 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2p2 1D → 1s2.2p2 1S | ਮਾਪਿਆ | NIST | |
| 399.024 nm | 70 | B II | emission | 1s2.2s.4p 1P* → 1s2.2s.8d 1D | ਮਾਪਿਆ | NIST | |
| 400.017 nm | 136 | B III | emission | 1s.2s.(3S).4d 4D → 1s.2s.(3S).5f 4F* | ਮਾਪਿਆ | NIST | |
| 412.1928 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.3d 3D → 1s2.2s.4f 3F* | ਮਾਪਿਆ | NIST | |
| 412.1928 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.3d 3D → 1s2.2s.4f 3F* | ਮਾਪਿਆ | NIST | |
| 412.1928 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.3d 3D → 1s2.2s.4f 3F* | ਮਾਪਿਆ | NIST | |
| 412.1928 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.3d 3D → 1s2.2s.4f 3F* | ਮਾਪਿਆ | NIST | |
| 412.1928 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.3d 3D → 1s2.2s.4f 3F* | ਮਾਪਿਆ | NIST | |
| 412.1928 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.3d 3D → 1s2.2s.4f 3F* | ਮਾਪਿਆ | NIST | |
| 414.697 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.5d 2D → 1s2.8f 2F* | ਮਾਪਿਆ | NIST | |
| 414.708 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.5d 2D → 1s2.8f 2F* | ਮਾਪਿਆ | NIST | |
| 414.708 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.5d 2D → 1s2.8f 2F* | ਮਾਪਿਆ | NIST | |
| 415.284 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4p 3P* → 1s2.2p.3p 3P | ਮਾਪਿਆ | NIST | |
| 415.284 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4p 3P* → 1s2.2p.3p 3P | ਮਾਪਿਆ | NIST | |
| 415.471 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4p 3P* → 1s2.2p.3p 3P | ਮਾਪਿਆ | NIST | |
| 415.471 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4p 3P* → 1s2.2p.3p 3P | ਮਾਪਿਆ | NIST | |
| 415.471 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4p 3P* → 1s2.2p.3p 3P | ਮਾਪਿਆ | NIST | |
| 415.584 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4p 3P* → 1s2.2p.3p 3P | ਮਾਪਿਆ | NIST | |
| 417.896 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3p 2P* → 2s.2p2 2P | ਮਾਪਿਆ | NIST | |
| 417.927 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3p 2P* → 2s.2p2 2P | ਮਾਪਿਆ | NIST | |
| 418.099 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3p 2P* → 2s.2p2 2P | ਮਾਪਿਆ | NIST | |
| 418.13 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3p 2P* → 2s.2p2 2P | ਮਾਪਿਆ | NIST | |
| 419.4792 nm | 180 | B II | emission | 1s2.2s.3p 1P* → 1s2.2s.4s 1S | ਮਾਪਿਆ | NIST | |
| 419.773 nm | 30 | B IV | emission | 1s.5s 3S → 1s.6p 3P* | ਮਾਪਿਆ | NIST | |
| 424.3 nm | 300 | B III | emission | 1s2.4p 2P* → 1s2.5d 2D | ਮਾਪਿਆ | NIST | |
| 424.359 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.4p 2P* → 1s2.5d 2D | ਮਾਪਿਆ | NIST | |
| 424.37 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.4p 2P* → 1s2.5d 2D | ਮਾਪਿਆ | NIST | |
| 427.274 nm | 50 | B II | emission | 1s2.2s.4s 3S → 1s2.2s.6p 3P* | ਮਾਪਿਆ | NIST | |
| 429.571 nm | 50 | B II | emission | 1s2.2s.4p 1P* → 1s2.2s.7d 1D | ਮਾਪਿਆ | NIST | |
| 436.147 nm | 60 | B III | emission | 1s.2p.(3P*).4f 2F → 1s.2p.(3P*).5g 2G* | ਮਾਪਿਆ | NIST | |
| 436.61 nm | 100 | B III | emission | 1s.2p.(3P*).4f 4F → 1s.2p.(3P*).5g 4G* | ਮਾਪਿਆ | NIST | |
| 443.11 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2p.3d 3D* → 1s2.2p.4f 3F | ਮਾਪਿਆ | NIST | |
| 443.185 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2p.3d 3D* → 1s2.2p.4f 3F | ਮਾਪਿਆ | NIST | |
| 443.291 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2p.3d 3D* → 1s2.2p.4f 3F | ਮਾਪਿਆ | NIST | |
| 445.943 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5p 3P* → 1s.6d 3D | ਮਾਪਿਆ | NIST | |
| 445.943 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5p 3P* → 1s.6d 3D | ਮਾਪਿਆ | NIST | |
| 445.943 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5p 3P* → 1s.6d 3D | ਮਾਪਿਆ | NIST | |
| 447.112 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.5s 2S → 1s2.7p 2P* | ਮਾਪਿਆ | NIST | |
| 447.112 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.5s 2S → 1s2.7p 2P* | ਮਾਪਿਆ | NIST | |
| 447.2029 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.3p 3P* → 1s2.2s.4s 3S | ਮਾਪਿਆ | NIST | |
| 447.2151 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.3p 3P* → 1s2.2s.4s 3S | ਮਾਪਿਆ | NIST | |
| 447.2862 nm | 470 | B II | emission | 1s2.2s.3p 3P* → 1s2.2s.4s 3S | ਮਾਪਿਆ | NIST | |
| 448.692 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.4d 2D → 1s2.5f 2F* | ਮਾਪਿਆ | NIST | |
| 448.71 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.4d 2D → 1s2.5f 2F* | ਮਾਪਿਆ | NIST | |
| 449.09 nm | 20 | B IV | emission | 1s.2s 1S → 1s.2p 1P* | ਮਾਪਿਆ | NIST | |
| 449.773 nm | 1700 | B III | emission | 1s2.4f 2F* → 1s2.5g 2G | ਮਾਪਿਆ | NIST | |
| 449.853 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.4f 2F* → 1s2.5f 2F* | ਮਾਪਿਆ | NIST | |
| 449.859 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.4f 2F* → 1s2.5f 2F* | ਮਾਪਿਆ | NIST | |
| 450.481 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.4f 2F* → 1s2.5d 2D | ਮਾਪਿਆ | NIST | |
| 450.482 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.4f 2F* → 1s2.5d 2D | ਮਾਪਿਆ | NIST | |
| 451.9912773 nm | ਉਪਲਬਧ ਨਹੀਂ | B V | emission | 7i 2I → 9k 2K* | ਮਾਪਿਆ | NIST | |
| 451.9946377 nm | ਉਪਲਬਧ ਨਹੀਂ | B V | emission | 7i 2I → 9k 2K* | ਮਾਪਿਆ | NIST | |
| 453.229 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4f 1F* → 1s2.2p.3p 1D | ਮਾਪਿਆ | NIST | |
| 459.72 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s.2s.(3S).4d 4D → 1s.2s.(3S).5p 4P* | ਮਾਪਿਆ | NIST | |
| 459.73 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s.2p.(3P*).4p 4P → 1s.2p.(3P*).5s 4P* | ਮਾਪਿਆ | NIST | |
| 461.114 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4p 3P* → 1s2.2p.3p 3S | ਮਾਪਿਆ | NIST | |
| 461.114 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4p 3P* → 1s2.2p.3p 3S | ਮਾਪਿਆ | NIST | |
| 461.114 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4p 3P* → 1s2.2p.3p 3S | ਮਾਪਿਆ | NIST | |
| 461.32 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5d 3D → 1s.6p 1P* | ਮਾਪਿਆ | NIST | |
| 463.217 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.4d 2D → 1s2.5p 2P* | ਮਾਪਿਆ | NIST | |
| 463.243 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.4d 2D → 1s2.5p 2P* | ਮਾਪਿਆ | NIST | |
| 463.263 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.4d 2D → 1s2.5p 2P* | ਮਾਪਿਆ | NIST | |
| 464.69 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5d 3D → 1s.6f 1F* | ਮਾਪਿਆ | NIST | |
| 464.69 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5d 3D → 1s.6f 1F* | ਮਾਪਿਆ | NIST | |
| 464.701 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5d 3D → 1s.6f 3F* | ਮਾਪਿਆ | NIST | |
| 464.701 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5d 3D → 1s.6f 3F* | ਮਾਪਿਆ | NIST | |
| 464.701 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5d 3D → 1s.6f 3F* | ਮਾਪਿਆ | NIST | |
| 464.701 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5d 3D → 1s.6f 3F* | ਮਾਪਿਆ | NIST | |
| 464.701 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5d 3D → 1s.6f 3F* | ਮਾਪਿਆ | NIST | |
| 464.701 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5d 3D → 1s.6f 3F* | ਮਾਪਿਆ | NIST | |
| 465.58 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5d 1D → 1s.6f 1F* | ਮਾਪਿਆ | NIST | |
| 465.786 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5f 3F* → 1s.6g 3G | ਮਾਪਿਆ | NIST | |
| 465.786 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5f 3F* → 1s.6g 3G | ਮਾਪਿਆ | NIST | |
| 465.786 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5f 3F* → 1s.6g 3G | ਮਾਪਿਆ | NIST | |
| 465.8 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5f 1F* → 1s.6g 3G | ਮਾਪਿਆ | NIST | |
| 465.815 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5g 3G → 1s.6h 3H* | ਮਾਪਿਆ | NIST | |
| 465.815 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5g 3G → 1s.6h 3H* | ਮਾਪਿਆ | NIST | |
| 465.815 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5g 3G → 1s.6h 3H* | ਮਾਪਿਆ | NIST | |
| 465.815 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5g 1G → 1s.6h 3H* | ਮਾਪਿਆ | NIST | |
| 465.92 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5g 1G → 1s.6f 1F* | ਮਾਪਿਆ | NIST | |
| 465.92 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5g 3G → 1s.6f 1F* | ਮਾਪਿਆ | NIST | |
| 465.92 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5g 3G → 1s.6f 1F* | ਮਾਪਿਆ | NIST | |
| 465.927 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5g 3G → 1s.6f 3F* | ਮਾਪਿਆ | NIST | |
| 465.927 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5g 3G → 1s.6f 3F* | ਮਾਪਿਆ | NIST | |
| 465.927 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5g 3G → 1s.6f 3F* | ਮਾਪਿਆ | NIST | |
| 465.927 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5g 1G → 1s.6f 3F* | ਮਾਪਿਆ | NIST | |
| 468.31 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5p 1P* → 1s.6p 1P* | ਮਾਪਿਆ | NIST | |
| 468.481 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.6g 3G → 1s.8h 3H* | ਮਾਪਿਆ | NIST | |
| 468.489 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.6f 3F* → 1s.8g 3G | ਮਾਪਿਆ | NIST | |
| 468.489 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.6f 3F* → 1s.8g 3G | ਮਾਪਿਆ | NIST | |
| 468.489 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.6f 3F* → 1s.8g 3G | ਮਾਪਿਆ | NIST | |
| 468.5 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.6h 3H* → 1s.8i 3I | ਮਾਪਿਆ | NIST | |
| 471.612 nm | 15 | B II | emission | 1s2.2p.3d 1D* → 1s2.2p.4p 1P | ਮਾਪਿਆ | NIST | |
| 471.99 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5p 1P* → 1s.6d 1D | ਮਾਪਿਆ | NIST | |
| 477.384 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5d 3D → 1s.6p 3P* | ਮਾਪਿਆ | NIST | |
| 477.384 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5d 3D → 1s.6p 3P* | ਮਾਪਿਆ | NIST | |
| 477.384 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5d 3D → 1s.6p 3P* | ਮਾਪਿਆ | NIST | |
| 478.42 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.3d 3D → 1s2.2s.4p 3P* | ਮਾਪਿਆ | NIST | |
| 478.42 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.3d 3D → 1s2.2s.4p 3P* | ਮਾਪਿਆ | NIST | |
| 478.4203 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.3d 3D → 1s2.2s.4p 3P* | ਮਾਪਿਆ | NIST | |
| 478.4203 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.3d 3D → 1s2.2s.4p 3P* | ਮਾਪਿਆ | NIST | |
| 478.4203 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.3d 3D → 1s2.2s.4p 3P* | ਮਾਪਿਆ | NIST | |
| 478.4203 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.3d 3D → 1s2.2s.4p 3P* | ਮਾਪਿਆ | NIST | |
| 481.276 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5p 3P* → 1s.6s 3S | ਮਾਪਿਆ | NIST | |
| 481.276 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5p 3P* → 1s.6s 3S | ਮਾਪਿਆ | NIST | |
| 481.276 nm | ਉਪਲਬਧ ਨਹੀਂ | B IV | emission | 1s.5p 3P* → 1s.6s 3S | ਮਾਪਿਆ | NIST | |
| 491.746 nm | 500 | B III | emission | 1s2.4p 2P* → 1s2.5s 2S | ਮਾਪਿਆ | NIST | |
| 491.84 nm | 500 | B III | emission | 1s2.4p 2P* → 1s2.5s 2S | ਮਾਪਿਆ | NIST | |
| 494.0365 nm | 440 | B II | emission | 1s2.2s.3d 1D → 1s2.2s.4f 1F* | ਮਾਪਿਆ | NIST | |
| 494.4788284 nm | ਉਪਲਬਧ ਨਹੀਂ | B V | emission | 6h 2H* → 7i 2I | ਮਾਪਿਆ | NIST | |
| 494.4864305 nm | ਉਪਲਬਧ ਨਹੀਂ | B V | emission | 6h 2H* → 7i 2I | ਮਾਪਿਆ | NIST | |
| 498.848 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.5p 2P* → 1s2.7d 2D | ਮਾਪਿਆ | NIST | |
| 498.901 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.5p 2P* → 1s2.7d 2D | ਮਾਪਿਆ | NIST | |
| 512.579 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4d 3D → 1s2.2s.7f 3F* | ਮਾਪਿਆ | NIST | |
| 512.579 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4d 3D → 1s2.2s.7f 3F* | ਮਾਪਿਆ | NIST | |
| 512.579 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4d 3D → 1s2.2s.7f 3F* | ਮਾਪਿਆ | NIST | |
| 515.776 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.5d 2D → 1s2.7f 2F* | ਮਾਪਿਆ | NIST | |
| 515.793 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.5d 2D → 1s2.7f 2F* | ਮਾਪਿਆ | NIST | |
| 516.57 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.5f 2F* → 1s2.7g 2G | ਮਾਪਿਆ | NIST | |
| 516.579 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.5f 2F* → 1s2.7g 2G | ਮਾਪਿਆ | NIST | |
| 522.65 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.5d 2D → 1s2.7p 2P* | ਮਾਪਿਆ | NIST | |
| 522.65 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.5d 2D → 1s2.7p 2P* | ਮਾਪਿਆ | NIST | |
| 522.667 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.5d 2D → 1s2.7p 2P* | ਮਾਪਿਆ | NIST | |
| 526.311 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4f 3F* → 1s2.2s.7g 3G | ਮਾਪਿਆ | NIST | |
| 526.311 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4f 3F* → 1s2.2s.7g 3G | ਮਾਪਿਆ | NIST | |
| 526.311 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4f 3F* → 1s2.2s.7g 3G | ਮਾਪਿਆ | NIST | |
| 529.28 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.5p 2P* → 1s2.7s 2S | ਮਾਪਿਆ | NIST | |
| 529.34 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s2.5p 2P* → 1s2.7s 2S | ਮਾਪਿਆ | NIST | |
| 534.765 nm | 15 | B II | emission | 1s2.2s.4s 1S → 1s2.2p.3s 1P* | ਮਾਪਿਆ | NIST | |
| 539.322 nm | 30 | B II | emission | 1s2.2s.4p 1P* → 1s2.2p.3p 1P | ਮਾਪਿਆ | NIST | |
| 550.4527 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s.2p2 2D → 2s2.11f 2F* | ਮਾਪਿਆ | NIST | |
| 550.4622 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s.2p2 2D → 2s2.11f 2F* | ਮਾਪਿਆ | NIST | |
| 556.3146 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s.2p2 2D → 2s2.10f 2F* | ਮਾਪਿਆ | NIST | |
| 556.3244 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s.2p2 2D → 2s2.10f 2F* | ਮਾਪਿਆ | NIST | |
| 563.30717 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3s 2S → 2s2.4p 2P* | ਮਾਪਿਆ | NIST | |
| 563.32732 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3s 2S → 2s2.4p 2P* | ਮਾਪਿਆ | NIST | |
| 564.4278 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s.2p2 2D → 2s2.9f 2F* | ਮਾਪਿਆ | NIST | |
| 564.4379 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s.2p2 2D → 2s2.9f 2F* | ਮਾਪਿਆ | NIST | |
| 576.1901 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s.2p2 2D → 2s2.8f 2F* | ਮਾਪਿਆ | NIST | |
| 576.1901 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s.2p2 2D → 2s2.8f 2F* | ਮਾਪਿਆ | NIST | |
| 576.2006 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s.2p2 2D → 2s2.8f 2F* | ਮਾਪਿਆ | NIST | |
| 578.747 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4s 3S → 1s2.2s.5p 3P* | ਮਾਪਿਆ | NIST | |
| 578.747 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4s 3S → 1s2.2s.5p 3P* | ਮਾਪਿਆ | NIST | |
| 578.747 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4s 3S → 1s2.2s.5p 3P* | ਮਾਪਿਆ | NIST | |
| 581.833 nm | 60 | B I | emission | 2s.2p2 2P → 2s.2p.(3P*).3d 2D* | ਮਾਪਿਆ | NIST | |
| 582.116 nm | 100 | B I | emission | 2s.2p2 2P → 2s.2p.(3P*).3d 2D* | ਮਾਪਿਆ | NIST | |
| 582.228 nm | 10 | B I | emission | 2s.2p2 2P → 2s.2p.(3P*).3d 2D* | ਮਾਪਿਆ | NIST | |
| 594.2619 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s.2p2 2D → 2s2.7f 2F* | ਮਾਪਿਆ | NIST | |
| 594.2619 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s.2p2 2D → 2s2.7f 2F* | ਮਾਪਿਆ | NIST | |
| 594.2731 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s.2p2 2D → 2s2.7f 2F* | ਮਾਪਿਆ | NIST | |
| 601.35 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4p 3P* → 1s2.2s.6s 3S | ਮਾਪਿਆ | NIST | |
| 601.35 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4p 3P* → 1s2.2s.6s 3S | ਮਾਪਿਆ | NIST | |
| 601.35 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4p 3P* → 1s2.2s.6s 3S | ਮਾਪਿਆ | NIST | |
| 602.772 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3p 2P* → 2s2.8d 2D | ਮਾਪਿਆ | NIST | |
| 602.837 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3p 2P* → 2s2.8d 2D | ਮਾਪਿਆ | NIST | |
| 602.837 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3p 2P* → 2s2.8d 2D | ਮਾਪਿਆ | NIST | |
| 608.039 nm | 85 | B II | emission | 1s2.2p2 1S → 1s2.2s.3p 1P* | ਮਾਪਿਆ | NIST | |
| 612.224 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2p2 1S → 1s2.2s.3p 3P* | ਮਾਪਿਆ | NIST | |
| 612.508 nm | 93 | B III | emission | 1s.2s.(3S).3s 4S → 1s.2s.(3S).3p 4P* | ਮਾਪਿਆ | NIST | |
| 612.752 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s.2s.(3S).3s 4S → 1s.2s.(3S).3p 4P* | ਮਾਪਿਆ | NIST | |
| 612.797 nm | ਉਪਲਬਧ ਨਹੀਂ | B III | emission | 1s.2s.(3S).3s 4S → 1s.2s.(3S).3p 4P* | ਮਾਪਿਆ | NIST | |
| 614.891 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4d 3D → 1s2.2s.6f 3F* | ਮਾਪਿਆ | NIST | |
| 614.891 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4d 3D → 1s2.2s.6f 3F* | ਮਾਪਿਆ | NIST | |
| 614.891 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4d 3D → 1s2.2s.6f 3F* | ਮਾਪਿਆ | NIST | |
| 614.891 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4d 3D → 1s2.2s.6f 3F* | ਮਾਪਿਆ | NIST | |
| 614.891 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4d 3D → 1s2.2s.6f 3F* | ਮਾਪਿਆ | NIST | |
| 614.891 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4d 3D → 1s2.2s.6f 3F* | ਮਾਪਿਆ | NIST | |
| 617.867 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3p 2P* → 2s2.8s 2S | ਮਾਪਿਆ | NIST | |
| 617.936 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3p 2P* → 2s2.8s 2S | ਮਾਪਿਆ | NIST | |
| 618.638 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4f 3F* → 1s2.2p.3p 3D | ਮਾਪਿਆ | NIST | |
| 618.638 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4f 3F* → 1s2.2p.3p 3D | ਮਾਪਿਆ | NIST | |
| 618.638 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4f 3F* → 1s2.2p.3p 3D | ਮਾਪਿਆ | NIST | |
| 619.359 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4f 3F* → 1s2.2p.3p 3D | ਮਾਪਿਆ | NIST | |
| 619.359 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4f 3F* → 1s2.2p.3p 3D | ਮਾਪਿਆ | NIST | |
| 619.735 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4f 3F* → 1s2.2p.3p 3D | ਮਾਪਿਆ | NIST | |
| 622.745 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3p 2P* → 2s2.7d 2D | ਮਾਪਿਆ | NIST | |
| 622.815 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3p 2P* → 2s2.7d 2D | ਮਾਪਿਆ | NIST | |
| 622.815 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3p 2P* → 2s2.7d 2D | ਮਾਪਿਆ | NIST | |
| 624.4557 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s.2p2 2D → 2s2.6f 2F* | ਮਾਪਿਆ | NIST | |
| 624.4557 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s.2p2 2D → 2s2.6f 2F* | ਮਾਪਿਆ | NIST | |
| 624.4681 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s.2p2 2D → 2s2.6f 2F* | ਮਾਪਿਆ | NIST | |
| 628.551 nm | 30 | B II | emission | 1s2.2s.3d 1D → 1s2.2s.4p 1P* | ਮਾਪਿਆ | NIST | |
| 634.927 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4f 3F* → 1s2.2s.6g 3G | ਮਾਪਿਆ | NIST | |
| 634.927 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4f 3F* → 1s2.2s.6g 3G | ਮਾਪਿਆ | NIST | |
| 634.927 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4f 3F* → 1s2.2s.6g 3G | ਮਾਪਿਆ | NIST | |
| 635.676 nm | 1 | B II | emission | 1s2.2s.4f 1F* → 1s2.2s.6g 1G | ਮਾਪਿਆ | NIST | |
| 643.151 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3p 2P* → 2s2.7s 2S | ਮਾਪਿਆ | NIST | |
| 643.225 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3p 2P* → 2s2.7s 2S | ਮਾਪਿਆ | NIST | |
| 652.056 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4s 3S → 1s2.2p.3s 3P* | ਮਾਪਿਆ | NIST | |
| 652.959 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4s 3S → 1s2.2p.3s 3P* | ਮਾਪਿਆ | NIST | |
| 653.371 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4s 3S → 1s2.2p.3s 3P* | ਮਾਪਿਆ | NIST | |
| 656.269 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3p 2P* → 2s2.6d 2D | ਮਾਪਿਆ | NIST | |
| 656.345 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3p 2P* → 2s2.6d 2D | ਮਾਪਿਆ | NIST | |
| 656.345 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3p 2P* → 2s2.6d 2D | ਮਾਪਿਆ | NIST | |
| 657.112 nm | 0.5 | B II | emission | 1s2.2s.5p 1P* → 1s2.2p.3p 1D | ਮਾਪਿਆ | NIST | |
| 671.765 nm | 0.5 | B II | emission | 1s2.2s.4d 1D → 1s2.2s.6f 1F* | ਮਾਪਿਆ | NIST | |
| 677.866 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.4p 2P* → 2s.2p2 2P | ਮਾਪਿਆ | NIST | |
| 677.895 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.4p 2P* → 2s.2p2 2P | ਮਾਪਿਆ | NIST | |
| 678.401 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.4p 2P* → 2s.2p2 2P | ਮਾਪਿਆ | NIST | |
| 678.431 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.4p 2P* → 2s.2p2 2P | ਮਾਪਿਆ | NIST | |
| 678.614 nm | 0.5 | B II | emission | 1s2.2s.4p 1P* → 1s2.2s.5d 1D | ਮਾਪਿਆ | NIST | |
| 681.95167 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s.2p2 2D → 2s2.5f 2F* | ਮਾਪਿਆ | NIST | |
| 681.95167 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s.2p2 2D → 2s2.5f 2F* | ਮਾਪਿਆ | NIST | |
| 681.96637 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s.2p2 2D → 2s2.5f 2F* | ਮਾਪਿਆ | NIST | |
| 697.688 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.3s 3S → 1s2.2s.3p 1P* | ਮਾਪਿਆ | NIST | |
| 703.027 nm | 4 | B II | emission | 1s2.2s.3s 3S → 1s2.2s.3p 3P* | ਮਾਪਿਆ | NIST | |
| 703.203 nm | 3 | B II | emission | 1s2.2s.3s 3S → 1s2.2s.3p 3P* | ਮਾਪਿਆ | NIST | |
| 703.233 nm | 2 | B II | emission | 1s2.2s.3s 3S → 1s2.2s.3p 3P* | ਮਾਪਿਆ | NIST | |
| 715.955 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2p.3s 3P* → 1s2.2p.3p 3P | ਮਾਪਿਆ | NIST | |
| 716.016 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2p.3s 3P* → 1s2.2p.3p 3P | ਮਾਪਿਆ | NIST | |
| 716.511 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2p.3s 3P* → 1s2.2p.3p 3P | ਮਾਪਿਆ | NIST | |
| 716.846 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2p.3s 3P* → 1s2.2p.3p 3P | ਮਾਪਿਆ | NIST | |
| 717.045 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2p.3s 3P* → 1s2.2p.3p 3P | ਮਾਪਿਆ | NIST | |
| 717.602 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2p.3s 3P* → 1s2.2p.3p 3P | ਮਾਪਿਆ | NIST | |
| 720.593 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3p 2P* → 2s2.5d 2D | ਮਾਪਿਆ | NIST | |
| 720.685 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3p 2P* → 2s2.5d 2D | ਮਾਪਿਆ | NIST | |
| 720.685 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3p 2P* → 2s2.5d 2D | ਮਾਪਿਆ | NIST | |
| 720.766 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3p 2P* → 2s2.6s 2S | ਮਾਪਿਆ | NIST | |
| 720.859 nm | ਉਪਲਬਧ ਨਹੀਂ | B I | emission | 2s2.3p 2P* → 2s2.6s 2S | ਮਾਪਿਆ | NIST | |
| 722.85 nm | ਉਪਲਬਧ ਨਹੀਂ | B II | emission | 1s2.2s.4s 1S → 1s2.2s.5p 1P* | ਮਾਪਿਆ | NIST |
ਵਿਸਤ੍ਰਿਤ ਗੁਣ
ਸਹਿ-ਸੰਯੋਜਕ ਅਰਧ-ਵਿਆਸ (ਵਿਸਤ੍ਰਿਤ)
- ਸਹਿ-ਸੰਯੋਜਕ ਅਰਧ-ਵਿਆਸ (ਪਿਊਕੋ)
- 85 pm
- ਸਹਿ-ਸੰਯੋਜਕ ਅਰਧ-ਵਿਆਸ (ਪਿਊਕੋ, ਦੋਹਰਾ ਬੰਧਨ)
- 78 pm
- ਸਹਿ-ਸੰਯੋਜਕ ਅਰਧ-ਵਿਆਸ (ਪਿਊਕੋ, ਤਿਹਰਾ ਬੰਧਨ)
- 73 pm
ਵਾਨ ਡਰ ਵਾਲਜ਼ ਅਰਧ-ਵਿਆਸ
- Truhlar
- 192 pm
- Batsanov
- 180 pm
- Alvarez
- 191 pm
- UFF
- 408.3 pm
- MM3
- 215 pm
- Dreiding
- 402 pm
ਪਰਮਾਣੂ ਅਤੇ ਧਾਤਵੀ ਅਰਧ-ਵਿਆਸ
- ਪਰਮਾਣੂ ਅਰਧ-ਵਿਆਸ (ਰਾਮ)
- 205 pm
- ਧਾਤਵੀ ਅਰਧ-ਵਿਆਸ (C12)
- 98 pm
ਅੰਕਨ ਪੈਮਾਨੇ
- Mendeleev
- 81
- Pettifor
- 86
- Glawe
- 86
ਬਿਜਲਈ ਰਿਣਾਤਮਕਤਾ ਦੇ ਪੈਮਾਨੇ
- Ghosh
- 0
- Miedema
- 5
- Gunnarsson–Lundqvist
- 4
- Robles–Bartolotti
- 4
ਧਰੁਵੀਕਰਨਯੋਗਤਾ ਅਤੇ ਪ੍ਰਕੀਰਣ
- ਦੋਧਰੁਵੀ ਧਰੁਵੀਕਰਨਯੋਗਤਾ
- 20.5 a.u.
- ਦੋਧਰੁਵੀ ਧਰੁਵੀਕਰਨਯੋਗਤਾ (ਅਨਿਸ਼ਚਿਤਤਾ)
- 0.1 a.u.
- C₆
- 99.5 Ha·Bohr6
- C₆ (Gould–Bučko)
- 99.2 Ha·Bohr6
ਮੀਡੇਮਾ ਪਰਾਮੀਟਰ
- ਮੀਡੇਮਾ ਮੋਲਰ ਆਇਤਨ
- 4.7 cm3/mol
- ਮੀਡੇਮਾ ਇਲੈਕਟ੍ਰਾਨ ਘਣਤਾ
- 5
ਸਪਲਾਈ ਦਾ ਜੋਖਮ ਅਤੇ ਅਰਥਸ਼ਾਸਤਰ
- ਉਤਪਾਦਨ ਦੀ ਕੇਂਦਰਿਤਤਾ
- 34
- ਸਾਪੇਖ ਸਪਲਾਈ ਜੋਖਮ
- 5
- ਰਾਜਨੀਤਿਕ ਸਥਿਰਤਾ (ਸਭ ਤੋਂ ਵੱਡਾ ਉਤਪਾਦਕ)
- 12
- ਰਾਜਨੀਤਿਕ ਸਥਿਰਤਾ (ਸਭ ਤੋਂ ਵੱਧ ਭੰਡਾਰ ਵਾਲਾ ਦੇਸ਼)
- 12
ਅਵਸਥਾ ਪਰਿਵਰਤਨ ਅਤੇ ਅਪਰਰੂਪ
| ਪਿਘਲਣ ਦਰਜਾ | 2350.15 K |
| ਉਬਾਲ ਦਰਜਾ | 4273.15 K |
ਆਕਸੀਕਰਨ ਅਵਸਥਾ ਦੀਆਂ ਸ਼੍ਰੇਣੀਆਂ
ਉੱਨਤ ਸੰਦਰਭ ਡਾਟਾ
ਪਰਿਰੱਖਣ ਸਥਿਰਾਂਕ (3)
| n | ਔਰਬਿਟਲ | σ |
|---|---|---|
| 1 | s | 0.3205 |
| 2 | p | 2.5786 |
| 2 | s | 2.4238 |
ਕ੍ਰਿਸਟਲ ਅਰਧ-ਵਿਆਸਾਂ ਦਾ ਵੇਰਵਾ (3)
| ਆਵੇਸ਼ | CN | ਸਪਿਨ | rcrystal (pm) | ਉਤਪੱਤੀ |
|---|---|---|---|---|
| 3 | III | 15 | ||
| 3 | IV | 25 | ||
| 3 | VI | 41 | calculated, |
ਸਮਸਥਾਨਿਕ ਖ਼ੈ ਦੀਆਂ ਵਿਧੀਆਂ (30)
| ਸਮਸਥਾਨਿਕ | ਮੋਡ | ਤੀਬਰਤਾ |
|---|---|---|
| 6 | 2p | — |
| 7 | p | 100% |
| 8 | B+ | 100% |
| 8 | B+A | 100% |
| 9 | p | 100% |
| 12 | B- | 100% |
| 12 | B-A | 0.6% |
| 13 | B- | 100% |
| 13 | B-n | 0.3% |
| 14 | B- | 100% |
ਐਕਸ-ਰੇ ਖਿੰਡਾਅ ਗੁਣਾਂਕ (502)
| ਊਰਜਾ (eV) | f₁ | f₂ |
|---|---|---|
| 10 | — | 1.48933 |
| 10.1617 | — | 1.48084 |
| 10.3261 | — | 1.4724 |
| 10.4931 | — | 1.46401 |
| 10.6628 | — | 1.45567 |
| 10.8353 | — | 1.44738 |
| 11.0106 | — | 1.43913 |
| 11.1886 | — | 1.43093 |
| 11.3696 | — | 1.42278 |
| 11.5535 | — | 1.41467 |
ਵਾਧੂ ਡਾਟਾ
Estimated Crustal Abundance
The estimated element abundance in the earth's crust.
1.0×101 milligrams per kilogram
ਸੰਦਰਭ (1)
Estimated Oceanic Abundance
The estimated element abundance in the earth's oceans.
4.44 milligrams per liter
ਸੰਦਰਭ (1)
Sources
Sources of this element.
The element is not found free in nature, but occurs as orthoboric acid usually found in certain volcanic spring waters and as borates in boron and colemantie.
Important sources of boron are ore rasorite (kernite) and tincal (borax ore). Both of these ores are found in the Mojave Desert. Tincal is the most important source of boron from the Mojave. Extensive borax deposits are also found in Turkey.
Boron exists naturally as 19.78% 10B isotope and 80.22% 11B isotope. High-purity crystalline boron may be prepared by the vapor phase reduction of boron trichloride or tribromide with hydrogen on electrically heated filaments. The impure or amorphous, boron, a brownish-black powder, can be obtained by heating the trioxide with magnesium powder.
Boron of 99.9999% purity has been produced and is available commercially. Elemental boron has an energy band gap of 1.50 to 1.56 eV, which is higher than that of either silicon or germanium.
ਸੰਦਰਭ (1)
- [6] Boron https://periodic.lanl.gov/5.shtml
ਸੰਦਰਭ
(9)
Data deposited in or computed by PubChem
The half-life and atomic mass data was provided by the Atomic Mass Data Center at the International Atomic Energy Agency.
Element data are cited from the Atomic weights of the elements (an IUPAC Technical Report). The IUPAC periodic table of elements can be found at https://iupac.org/what-we-do/periodic-table-of-elements/. Additional information can be found within IUPAC publication doi:10.1515/pac-2015-0703 Copyright © 2020 International Union of Pure and Applied Chemistry.
The information are cited from Pure Appl. Chem. 2018; 90(12): 1833-2092, https://doi.org/10.1515/pac-2015-0703.
Thomas Jefferson National Accelerator Facility (Jefferson Lab) is one of 17 national laboratories funded by the U.S. Department of Energy. The lab's primary mission is to conduct basic research of the atom's nucleus using the lab's unique particle accelerator, known as the Continuous Electron Beam Accelerator Facility (CEBAF). For more information visit https://www.jlab.org/
The periodic table at the LANL (Los Alamos National Laboratory) contains basic element information together with the history, source, properties, use, handling and more. The provenance data may be found from the link under the source name.
The periodic table contains NIST's critically-evaluated data on atomic properties of the elements. The provenance data that include data for atomic spectroscopy, X-ray and gamma ray, radiation dosimetry, nuclear physics, and condensed matter physics may be found from the link under the source name. Ref: https://www.nist.gov/pml/atomic-spectra-database
This section provides all form of data related to element Boron.
The element property data was retrieved from publications.