Gallium (Ga)
post-transition-metalSolid
प्रमाणित अणुभार
69.723 uइलेक्ट्रॉन संरूपण
[Ar] 4s2 3d10 4p1द्रवणांक
29.76 °Cउत्कलनांक
2203.85 °Cघनता
5910 kg/m³ऑक्सिडीकरण अवस्था
−5, −4, −3, −2, −1, 0, +1, +2, +3विद्युतऋणता (पॉलिंग)
1.81आयनीकरण ऊर्जा (पहिली)
5.999302 eVशोधाचे वर्ष
1875अणुत्रिज्या
130 pmतपशील
Gallium is a soft post-transition metal in group 13, chemically related to aluminium and indium. It is notable for melting just above room temperature, forming low-melting alloys, and supplying semiconductors through compounds such as gallium arsenide and gallium nitride. In nature it is dispersed rather than concentrated in its own ores, so it is recovered mainly as a by-product of aluminium and zinc processing.
It is one of four metals mercury, cesium, and rubidium which can be liquid near room temperature and, thus, can be used in high-temperature thermometers. It has one of the longest liquid ranges of any metal and has a low vapor pressure even at high temperatures.
There is a strong tendency for gallium to supercool below its freezing point. Therefore, seeding may be necessary to initiate solidification.
Ultra-pure gallium has a beautiful, silvery appearance, and the solid metal exhibits a conchoidal fracture similar to glass. The metal expands 3.1 percent on solidifying; therefore, it should not be stored in glass or metal containers, because they may break as the metal solidifies.
High-purity gallium is attacked only slowly by mineral acids.
The name derives from the Latin gallia for France. It was discovered in zinc blende by the French chemist Paul-Emile Lecoq de Boisbaudran in 1875. It was first isolated in 1878 by Lecoq de Boisbaudran and the French chemist Émile-Clément Jungflesch.
First proposed to exist by Dmitri Mendeleyev in 1871 based on gaps in his newly created Periodic Table of Elements, gallium was discovered spectroscopically by the French chemist Paul-Émile Lecoq de Boisbaudran in 1875. Later that same year, Lecoq was able to obtain pure gallium through the electrolysis of a solution of gallium hydroxide (Ga(OH)3) in potassium hydroxide (KOH). Trace amounts of gallium are found in diaspore, sphalerite, germanite and bauxite as well as in the byproducts of burning coal.
From the Latin word Gallia, France; also from Latin, gallus, a translation of "Lecoq," a cock. Predicted and described by Mendeleev as ekaaluminum, and discovered spectroscopically by Lecoq de Boisbaudran in 1875, who in the same year obtained the free metal by electrolysis of a solution of the hydroxide in KOH.
Pure gallium is a silvery, lustrous metal that is solid at ordinary room temperature but melts at about 30 °C. The solid is brittle enough to fracture, while the liquid readily wets many surfaces and can penetrate some metals, especially aluminium.
Gallium is used chiefly in compound semiconductors. Gallium arsenide (GaAs) is important in high-frequency electronics, optoelectronics, infrared light-emitting diodes, and some photovoltaic cells. Gallium nitride (GaN) is central to blue and ultraviolet light-emitting diodes, laser diodes, and efficient power electronics. Low-melting gallium alloys are used in thermometers, thermal interfaces, and specialized heat-transfer applications where mercury is undesirable. Radioisotopes such as ⁶⁷Ga and ⁶⁸Ga are used in diagnostic nuclear medicine.
Gallium melts near room temperature and has one of the largest liquid ranges of any metal, so it has found use in high temperature thermometers. Gallium easily forms alloys with most metals and has been used to create low melting alloys. Gallium is used as a doping material for semiconductors and has been used to produce solid-state items like transistors and light emitting diodes. Gallium arsenide (GaAs) can produce laser light directly from electricity. Large amounts of gallium trichloride (GaCl3) have been gathered to build the Gallium Neutrino Observatory, an observatory located in Italy built to study particles called neutrinos which are produced inside the sun during the process of nuclear fusion.
Gallium wets glass or porcelain and forms a brilliant mirror when it is painted on glass. It is widely used in doping semiconductors and producing solid-state devices such as transistors.
Magnesium gallate containing divalent impurities, such as Mn+2, is finding use in commercial ultraviolet-activated powder phosphors. Gallium arsenide is capable of converting electricity directly into coherent light. Gallium readily alloys with most metals, and has been used as a component in low-melting alloys.
Isotopes in Medicine
68Ga (with a half-life of 68 min) is a radioactive isotope that emits positrons, which are used to produce high-resolution imaging with positron emission tomography (PET). Unlike 18F, which is most commonly used, 68Ga is more easily produced using a cost-effective generator with the parent radionuclide 68Ge (with a half-life of 271 days) (Fig. IUPAC.31.1). Once produced, 68Ga easily couples to biomolecules (most commonly peptides) that target G-protein coupled receptors, which are over-expressed on human tumor cells. The labeled protein acts as a radioactive tracer for cancer diagnostics. PET images are often coupled with CT images to get a more complete picture of the body [256] I. Kayani, B. G. Conry, A. M. Groves, T. Win, J. Dickson, M. Caplin, J. B. Bomanji. J. Nucl. Med.50, 1927 (2009)., [257] M. Fani, J. P. André, H. R. Maecke. Contrast Media Mol. Imaging3, 67 (2008)., [258] G. J. Ehrhardt, M. J. Welch. J. Nucl. Med.19, 925 (1978)., [259] G. Ehrhardt, S. Wagner, M. J. Welch. J. Labelled Compd. Radiopharm.16, 111 (1979)., [260] M. V. Cantorias, S. D. Figueroa, T. P. Quinn, J. R. Lever, T. J. Hoffman, L. D. Watkinson, T. L. Carmack, C. S. Cutler. Nucl. Med. Biol.36, 505 (2009)., [261] J. C. Rold, T. L. Sieckman, G. L. Figueroa, S. D. Sublett, S. V. Engelbrecht, H. Cutler, C. S. Jurisson, S. S. Hoffman, T. J. Bottenus, B. N. Garrison. Trans. Am. Nucl. Soc.98, 802 (2008)., [262] J. Fitzsimmons, M. Fassbender, R. Atcher. J. Nucl. Med.48, 319 (2007).. Radiopharmaceutical 67Ga (with a half-life of 78 h) is a gamma-emitting isotope used in scintigraphy for medical imaging [263] S. M. Larson, P. B. Hoffer. “Normal patterns of localization”, in Gallium-67 Imaging, P. B. Hoffer, C. Bekerman, and R. E. Henkin (Eds.), John Wiley, New York (1978)., [264] A. Wirth, J. F. Seymour, R. J. Hicks, R. Ware, R. Fisher, M. Prince, M. P. MacManus, G. Ryan, H. Januszewicz, M. Wolf. Am. J. Med.112, 262 (2002)., [265] A. Vijayananthan, A. V. Arumugam, G. Kumar, D. Harichandra. Int. J. Biomed. Imaging4 (2), e23 (2008)..
Gallium most commonly adopts the +3 oxidation state, although lower-valent gallium chemistry is well established in specialized compounds. Gallium(III) oxide (Ga₂O₃) is a wide-band-gap oxide of growing interest for power and ultraviolet devices. Gallium arsenide (GaAs), gallium nitride (GaN), gallium phosphide (GaP), and gallium antimonide (GaSb) are important III-V semiconductors. Gallium(III) chloride (GaCl₃) is a Lewis acidic halide and forms many adducts. Gallium(III) salts often hydrolyze in water, reflecting the high charge density of Ga³⁺.
See more information at the Gallium compound page.
Compact gallium metal has low acute toxicity, but it can stain skin and damage aluminium parts by liquid-metal embrittlement. Dusts, fumes, and soluble gallium compounds require normal laboratory controls because toxicity depends strongly on compound form and exposure route. Gallium arsenide (GaAs) introduces additional concern from arsenic during machining, heating, or waste handling. Medical radioisotopes present isotope-specific radiation hazards.
Its toxicity appears to be of a low order, but should be handled with care until more data is available.
Gallium occurs at trace levels in many minerals, especially those associated with aluminium and zinc ores. It substitutes for chemically similar ions rather than forming abundant gallium minerals. Weathering and industrial processing can mobilize small amounts, but gallium is not a major nutrient and has no well-established biological role. Environmental concern is usually tied to mining residues, semiconductor waste, and associated elements such as arsenic rather than to metallic gallium alone.
Gallium supply is dominated by by-product recovery, especially from bauxite processing liquors and, to a lesser extent, zinc-processing streams. Because primary ores are not mined for gallium alone, output can be constrained by aluminium and zinc production, refinery technology, and purification capacity. Demand is driven mainly by semiconductor and optoelectronic materials, where high purity is essential. Recycling occurs from manufacturing scrap and some end-of-life material, but dispersed uses and complex devices limit complete recovery. Substitution is application-specific; silicon, silicon carbide, or other III-V compounds can replace gallium materials in some devices but not without design changes.
Gallium is often found as a trace element in diaspore, sphalerite, germanite, bauxite, and coal. Some flue dusts from burning coal have been shown to contain as much 1.5 percent gallium.
Gallium is a relatively rare element in the cosmos compared with lighter metals. Its stable isotopes, ⁶⁹Ga and ⁷¹Ga, are produced in stellar nucleosynthesis pathways involving neutron capture and related processes in evolved stars and supernova environments. In planetary materials it behaves as a moderately volatile, lithophile to chalcophile trace element and is used in geochemical studies of differentiation and volatility.
- Gallium expands on freezing, so solidification can break rigid containers.
- The liquid metal has an unusually wide liquid range before boiling.
- Gallium can diffuse into aluminium and make it crumble under stress.
- Natural gallium consists mainly of two stable isotopes, ⁶⁹Ga and ⁷¹Ga.
- Very high-purity gallium is needed for many semiconductor applications.
प्रतिमा
गुणधर्म
भौतिक
- अणुत्रिज्या (अनुभवाधारित)
- 130 pm सर्व घटकांच्या अणुत्रिज्या (अनुभवाधारित) ची तुलना करा →
- सहसंयुजी त्रिज्या
- 122 pm सर्व घटकांच्या सहसंयुजी त्रिज्या ची तुलना करा →
- व्हॅन डर वाल्स त्रिज्या
- 187 pm सर्व घटकांच्या व्हॅन डर वाल्स त्रिज्या ची तुलना करा →
- धात्विक त्रिज्या
- 125 pm सर्व घटकांच्या धात्विक त्रिज्या ची तुलना करा →
- घनता
- 5910 kg/m³ सर्व घटकांच्या घनता ची तुलना करा →
- मोलर आयतन
- 0.0118 L/mol
- STP येथे अवस्था
- घन सर्व घटकांच्या STP येथे अवस्था ची तुलना करा →
- द्रवणांक
- 29.76 °C सर्व घटकांच्या द्रवणांक ची तुलना करा →
- उत्कलनांक
- 2203.85 °C सर्व घटकांच्या उत्कलनांक ची तुलना करा →
- उष्णता चालकता
- 28.1 W/(m·K) सर्व घटकांच्या उष्णता चालकता ची तुलना करा →
- विशिष्ट उष्माधारकता
- 0.373 J/(g·K) सर्व घटकांच्या विशिष्ट उष्माधारकता ची तुलना करा →
- मोलर उष्माधारकता
- 26.03 J/(mol·K) सर्व घटकांच्या मोलर उष्माधारकता ची तुलना करा →
- स्फटिक संरचना
- लंबसमचतुर्भुजी सर्व घटकांच्या स्फटिक संरचना ची तुलना करा →
रासायनिक
- विद्युतऋणता (पॉलिंग)
- 1.81 सर्व घटकांच्या विद्युतऋणता (पॉलिंग) ची तुलना करा →
- विद्युतऋणता (ॲलन)
- 1.756
- इलेक्ट्रॉन आसक्ती
- 0.3 eV
- आयनीकरण ऊर्जा (पहिली)
- 5.999302 eV सर्व घटकांच्या आयनीकरण ऊर्जा (पहिली) ची तुलना करा →
- आयनीकरण ऊर्जा (दुसरी)
- 20.515211 eV सर्व घटकांच्या आयनीकरण ऊर्जा (दुसरी) ची तुलना करा →
- आयनीकरण ऊर्जा (तिसरी)
- 30.725866 eV सर्व घटकांच्या आयनीकरण ऊर्जा (तिसरी) ची तुलना करा →
- आयनीकरण ऊर्जा (चौथी)
- 63.241218 eV सर्व घटकांच्या आयनीकरण ऊर्जा (चौथी) ची तुलना करा →
- आयनीकरण ऊर्जा (पाचवी)
- 86.010296 eV सर्व घटकांच्या आयनीकरण ऊर्जा (पाचवी) ची तुलना करा →
- ऑक्सिडीकरण अवस्था
- −5, −4, −3, −2, −1, 0, +1, +2, +3 सर्व घटकांच्या ऑक्सिडीकरण अवस्था ची तुलना करा →
- संयुजा इलेक्ट्रॉन
- 3 सर्व घटकांच्या संयुजा इलेक्ट्रॉन ची तुलना करा →
- इलेक्ट्रॉन संरूपण
- [Ar] 4s2 3d10 4p1
उष्मागतिक
- त्रिक बिंदू (तापमान)
- 29.7666 °C
- द्रवण उष्मा
- 0.05793647 eV सर्व घटकांच्या द्रवण उष्मा ची तुलना करा →
- बाष्पीभवन उष्मा
- 2.653262 eV सर्व घटकांच्या बाष्पीभवन उष्मा ची तुलना करा →
- संप्लवन उष्मा
- 2.808727 eV
- अणूकरण उष्मा
- 2.808727 eV
- अणूकरण एन्थाल्पी
- 2.818676 eV
केंद्रकीय
- प्रोटॉन
- 31 सर्व घटकांच्या प्रोटॉन ची तुलना करा →
- न्यूट्रॉन
- 38 सर्व घटकांच्या न्यूट्रॉन ची तुलना करा →
- ज्ञात समस्थानिके
- 33 सर्व घटकांच्या ज्ञात समस्थानिके ची तुलना करा →
- स्थिर समस्थानिके
- 2 सर्व घटकांच्या स्थिर समस्थानिके ची तुलना करा →
- सर्वाधिक स्थिर समस्थानिक
- Ga-69
- शोधाचे वर्ष
- 1875
विपुलता
- विपुलता (पृथ्वीचे कवच)
- 19 mg/kg सर्व घटकांच्या विपुलता (पृथ्वीचे कवच) ची तुलना करा →
- विपुलता (महासागर)
- 3 × 10−5 mg/L सर्व घटकांच्या विपुलता (महासागर) ची तुलना करा →
स्फटिक संरचना
- जालक स्थिरांक a
- 451 pm
इलेक्ट्रॉन संरचना
- प्रत्येक कवचातील इलेक्ट्रॉन
- 2, 8, 18, 3 सर्व घटकांच्या प्रत्येक कवचातील इलेक्ट्रॉन ची तुलना करा →
ओळखचिन्हे
- CAS क्रमांक
- 7440-55-3 सर्व घटकांच्या CAS क्रमांक ची तुलना करा →
- टर्म चिन्ह
- 2P°1/2
- InChI
- InChI=1S/Ga
- InChI की
- GYHNNYVSQQEPJS-UHFFFAOYSA-N
इलेक्ट्रॉन संरूपण मोजलेले
Ga: 3d¹⁰ 4s² 4p¹[Ar] 3d¹⁰ 4s² 4p¹1s² 2s² 2p⁶ 3s² 3p⁶ 3d¹⁰ 4s² 4p¹अणुप्रतिमान
समस्थानिकांमुळे न्यूट्रॉन संख्या, वस्तुमान आणि स्थैर्य बदलते — विद्युतदृष्ट्या उदासीन अणूचे इलेक्ट्रॉन संरूपण बदलत नाही.
योजनात्मक अणुप्रतिमान, प्रमाणानुसार नाही.
अणूची विशिष्ट ओळख
उत्सर्जन / शोषण वर्णपट
समस्थानिक वितरण
| वस्तुमानांक | अणुवस्तुमान (u) | नैसर्गिक विपुलता | अर्धायुष्य |
|---|---|---|---|
| 69 स्थिर | ६८.९२५५७३५ ± ०.०००००१३ | 60.1080% | स्थिर |
| 71 स्थिर | ७०.९२४७०२५८ ± ०.००००००८७ | 39.8920% | स्थिर |
अवस्था / स्थिती
कारण: द्रवणांकापेक्षा (29.76 °C) 4.8 °C कमी
योजनात्मक, प्रमाणानुसार नाही
अवस्थांतर बिंदू
अवस्थांतर ऊर्जा
द्रवणांकावर 1 mol वितळवण्यासाठी आवश्यक ऊर्जा
उत्कलनांकावर 1 mol चे बाष्पीभवन करण्यासाठी आवश्यक ऊर्जा
संप्लवनांकावर 1 mol चे संप्लवन करण्यासाठी आवश्यक ऊर्जा
घनता
प्रमाणित परिस्थितीत
प्रमाणित परिस्थितीत
प्रगत
अणुवर्णपट
31 पैकी 10 दाखवले आहेत. आयनाच्या विद्युतभारानुसार चढत्या क्रमाने मांडलेले.
वर्णरेषांचा संग्रह ?
| आयन | विद्युतभार | एकूण वर्णरेषा | संक्रमण संभाव्यता | पातळ्यांची नामांकने |
|---|---|---|---|---|
| Ga I | 0 | 342 | 23 | 342 |
| Ga II | +1 | 176 | 10 | 176 |
| Ga III | +2 | 113 | 2 | 113 |
| Ga IV | +3 | 594 | 0 | 594 |
| Ga V | +4 | 185 | 0 | 185 |
| Ga VI | +5 | 501 | 0 | 501 |
| Ga VII | +6 | 451 | 0 | 451 |
ऊर्जा पातळ्यांचा संग्रह ?
| आयन | विद्युतभार | पातळ्या |
|---|---|---|
| Ga I | 0 | 262 |
| Ga II | +1 | 96 |
| Ga III | +2 | 61 |
| Ga IV | +3 | 192 |
| Ga V | +4 | 92 |
| Ga VI | +5 | 158 |
| Ga VII | +6 | 181 |
| Ga VIII | +7 | 2 |
| Ga IX | +8 | 2 |
| Ga X | +9 | 2 |
आयनिक त्रिज्या
| विद्युतभार | समन्वय | प्रचक्रण | त्रिज्या |
|---|---|---|---|
| +3 | 4 | उपलब्ध नाही | 47 pm |
| +3 | 5 | उपलब्ध नाही | 55.00000000000001 pm |
| +3 | 6 | उपलब्ध नाही | 62 pm |
संयुगे
समस्थानिके (2)
| वस्तुमानांक | अणुवस्तुमान (u) | नैसर्गिक विपुलता | अर्धायुष्य | क्षय प्रकार | |
|---|---|---|---|---|---|
| 69 स्थिर | ६८.९२५५७३५ ± ०.०००००१३ | 60.1080% ± 0.0090% | स्थिर | stable | |
| 71 स्थिर | ७०.९२४७०२५८ ± ०.००००००८७ | 39.8920% ± 0.0090% | स्थिर | stable |
वर्णरेषा
| तरंगलांबी (nm) | तीव्रता | आयनीकरण टप्पा | प्रकार | संक्रमण | अचूकता | स्रोत | |
|---|---|---|---|---|---|---|---|
| 417.33 nm | उपलब्ध नाही | ID 486 | emission | 3s2.3p3 2P* → 3s2.3p3 2P* | मोजलेले | NIST | |
| 424.0525 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.70p 2P* | मोजलेले | NIST | |
| 424.0525 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.70p 2P* | मोजलेले | NIST | |
| 424.0651 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.69p 2P* | मोजलेले | NIST | |
| 424.0651 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.69p 2P* | मोजलेले | NIST | |
| 424.08 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.68p 2P* | मोजलेले | NIST | |
| 424.08 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.68p 2P* | मोजलेले | NIST | |
| 424.0924 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.67p 2P* | मोजलेले | NIST | |
| 424.0924 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.67p 2P* | मोजलेले | NIST | |
| 424.1098 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.66p 2P* | मोजलेले | NIST | |
| 424.1098 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.66p 2P* | मोजलेले | NIST | |
| 424.1257 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.65p 2P* | मोजलेले | NIST | |
| 424.1257 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.65p 2P* | मोजलेले | NIST | |
| 424.1406 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.64p 2P* | मोजलेले | NIST | |
| 424.1406 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.64p 2P* | मोजलेले | NIST | |
| 424.1588 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.63p 2P* | मोजलेले | NIST | |
| 424.1588 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.63p 2P* | मोजलेले | NIST | |
| 424.1761 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.62p 2P* | मोजलेले | NIST | |
| 424.1761 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.62p 2P* | मोजलेले | NIST | |
| 424.1948 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.61p 2P* | मोजलेले | NIST | |
| 424.1948 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.61p 2P* | मोजलेले | NIST | |
| 424.2157 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.60p 2P* | मोजलेले | NIST | |
| 424.2157 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.60p 2P* | मोजलेले | NIST | |
| 424.2367 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.59p 2P* | मोजलेले | NIST | |
| 424.2367 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.59p 2P* | मोजलेले | NIST | |
| 424.2582 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.58p 2P* | मोजलेले | NIST | |
| 424.2582 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.58p 2P* | मोजलेले | NIST | |
| 424.2826 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.57p 2P* | मोजलेले | NIST | |
| 424.2826 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.57p 2P* | मोजलेले | NIST | |
| 424.3887 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.53p 2P* | मोजलेले | NIST | |
| 424.3887 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.53p 2P* | मोजलेले | NIST | |
| 424.4204 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.52p 2P* | मोजलेले | NIST | |
| 424.4204 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.52p 2P* | मोजलेले | NIST | |
| 424.4531 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.51p 2P* | मोजलेले | NIST | |
| 424.4531 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.51p 2P* | मोजलेले | NIST | |
| 424.4886 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.50p 2P* | मोजलेले | NIST | |
| 424.4886 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.50p 2P* | मोजलेले | NIST | |
| 424.5261 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.49p 2P* | मोजलेले | NIST | |
| 424.5261 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.49p 2P* | मोजलेले | NIST | |
| 424.5675 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.48p 2P* | मोजलेले | NIST | |
| 424.5675 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.48p 2P* | मोजलेले | NIST | |
| 424.6112 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.47p 2P* | मोजलेले | NIST | |
| 424.6112 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.47p 2P* | मोजलेले | NIST | |
| 424.6563 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.46p 2P* | मोजलेले | NIST | |
| 424.6563 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.46p 2P* | मोजलेले | NIST | |
| 424.7046 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.45p 2P* | मोजलेले | NIST | |
| 424.7046 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.45p 2P* | मोजलेले | NIST | |
| 424.7569 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.44p 2P* | मोजलेले | NIST | |
| 424.7569 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.44p 2P* | मोजलेले | NIST | |
| 424.8143 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.43p 2P* | मोजलेले | NIST | |
| 424.8143 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.43p 2P* | मोजलेले | NIST | |
| 424.8743 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.42p 2P* | मोजलेले | NIST | |
| 424.8743 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.42p 2P* | मोजलेले | NIST | |
| 424.94 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.41p 2P* | मोजलेले | NIST | |
| 424.94 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.41p 2P* | मोजलेले | NIST | |
| 425.4789 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.34d 2D | मोजलेले | NIST | |
| 425.4799 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.34d 2D | मोजलेले | NIST | |
| 426.035 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.30d 2D | मोजलेले | NIST | |
| 426.0365 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.30d 2D | मोजलेले | NIST | |
| 426.6348 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.27d 2D | मोजलेले | NIST | |
| 426.6367 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.27d 2D | मोजलेले | NIST | |
| 427.1688 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.25d 2D | मोजलेले | NIST | |
| 427.1712 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.25d 2D | मोजलेले | NIST | |
| 427.8589 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.23d 2D | मोजलेले | NIST | |
| 427.8621 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.23d 2D | मोजलेले | NIST | |
| 428.7731 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.21d 2D | मोजलेले | NIST | |
| 428.7774 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.21d 2D | मोजलेले | NIST | |
| 429.3459 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.20d 2D | मोजलेले | NIST | |
| 429.3507 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.20d 2D | मोजलेले | NIST | |
| 430.0203 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.19d 2D | मोजलेले | NIST | |
| 430.026 nm | उपलब्ध नाही | Ga I | emission | 4s2.5s 2S → 4s2.19d 2D | मोजलेले | NIST | |
| 448.84 nm | उपलब्ध नाही | ID 505 | emission | 5p 2P* → 5d 2D | मोजलेले | NIST | |
| 459.16 nm | उपलब्ध नाही | ID 505 | emission | 5s 2S → 5p 2P* | मोजलेले | NIST | |
| 557 nm | उपलब्ध नाही | ID 482 | emission | 1s.5s 3S → 1s.5p 3P* | मोजलेले | NIST | |
| 567.7 nm | उपलब्ध नाही | ID 498 | emission | 3s2.3p2 3P → 3s2.3p2 3P | मोजलेले | NIST | |
| 587 nm | उपलब्ध नाही | ID 482 | emission | 1s.4p 3P* → 1s.4d 3D | मोजलेले | NIST | |
| 675 nm | उपलब्ध नाही | ID 486 | emission | 3s2.3p3 2D* → 3s2.3p3 2D* | मोजलेले | NIST | |
| 706.7 nm | उपलब्ध नाही | ID 505 | emission | 4p 2P* → 4d 2D | मोजलेले | NIST |
विस्तारित गुणधर्म
सहसंयुजी त्रिज्या (विस्तारित)
- सहसंयुजी त्रिज्या (प्युक्को)
- 124 pm
- सहसंयुजी त्रिज्या (प्युक्को, दुहेरी बंध)
- 117 pm
- सहसंयुजी त्रिज्या (प्युक्को, तिहेरी बंध)
- 121 pm
व्हॅन डर वाल्स त्रिज्या
- Bondi
- 187 pm
- Batsanov
- 210 pm
- Alvarez
- 232 pm
- UFF
- 438.3 pm
- MM3
- 246 pm
- Dreiding
- 439 pm
अणुत्रिज्या आणि धात्विक त्रिज्या
- अणुत्रिज्या (राह्म)
- 233 pm
- धात्विक त्रिज्या (C12)
- 140 pm
क्रमांकन मापनपट्ट्या
- Mendeleev
- 83
- Pettifor
- 81
- Glawe
- 79
विद्युतऋणता मापनपट्ट्या
- Ghosh
- 0
- Miedema
- 4
- Gunnarsson–Lundqvist
- 3
- Robles–Bartolotti
- 3
ध्रुवणक्षमता आणि अपस्करण
- द्विध्रुव ध्रुवणक्षमता
- 50 a.u.
- द्विध्रुव ध्रुवणक्षमता (अनिश्चितता)
- 3 a.u.
- C₆
- 498 Ha·Bohr6
- C₆ (Gould–Bučko)
- 456 Ha·Bohr6
मिडेमा प्राचल
- मिडेमा मोलर आयतन
- 11.82 cm3/mol
- मिडेमा इलेक्ट्रॉन घनता
- 2
पुरवठा जोखीम आणि अर्थकारण
- उत्पादनाचे केंद्रीकरण
- 54
- सापेक्ष पुरवठा जोखीम
- 8
- राजकीय स्थैर्य (प्रमुख उत्पादक)
- 24
अवस्थांतरे आणि अपरूपे
| द्रवणांक | 302.91 K |
| उत्कलनांक | 2502.15 K |
| त्रिक बिंदू (तापमान) | 302.92 K |
ऑक्सिडीकरण अवस्थांचे वर्ग
प्रगत संदर्भ माहिती
परिरक्षण स्थिरांक (8)
| n | कक्षिका | σ |
|---|---|---|
| 1 | s | 0.6906 |
| 2 | p | 3.9092 |
| 2 | s | 8.401 |
| 3 | d | 15.9067 |
| 3 | p | 14.7964 |
| 3 | s | 14.0038 |
| 4 | p | 24.7784 |
| 4 | s | 23.9332 |
स्फटिक त्रिज्यांचा तपशील (3)
| विद्युतभार | CN | प्रचक्रण | rcrystal (pm) | उत्पत्ती |
|---|---|---|---|---|
| 3 | IV | 61 | ||
| 3 | V | 69 | ||
| 3 | VI | 76 | from r^3 vs V plots, |
समस्थानिक क्षय प्रकार (51)
| समस्थानिक | मोड | तीव्रता |
|---|---|---|
| 56 | p | — |
| 57 | p | — |
| 58 | p | — |
| 59 | p | — |
| 60 | B+ | 100% |
| 60 | B+p | 1.6% |
| 60 | B+A | 0% |
| 61 | B+ | 100% |
| 61 | B+p | 0.3% |
| 62 | B+ | 100% |
क्ष-किरण प्रकीर्णन गुणक (506)
| ऊर्जा (eV) | f₁ | f₂ |
|---|---|---|
| 10 | — | 2.98527 |
| 10.1617 | — | 2.98141 |
| 10.3261 | — | 2.97756 |
| 10.4931 | — | 2.9737 |
| 10.6628 | — | 2.96986 |
| 10.8353 | — | 2.96602 |
| 11.0106 | — | 2.95695 |
| 11.1886 | — | 2.90859 |
| 11.3696 | — | 2.86103 |
| 11.5535 | — | 2.81425 |
अतिरिक्त माहिती
Estimated Crustal Abundance
The estimated element abundance in the earth's crust.
1.9×101 milligrams per kilogram
संदर्भ (1)
Estimated Oceanic Abundance
The estimated element abundance in the earth's oceans.
3×10-5 milligrams per liter
संदर्भ (1)
Sources
Sources of this element.
Gallium is often found as a trace element in diaspore, sphalerite, germanite, bauxite, and coal. Some flue dusts from burning coal have been shown to contain as much 1.5 percent gallium.
संदर्भ (1)
- [6] Gallium https://periodic.lanl.gov/31.shtml
संदर्भ
(9)
Data deposited in or computed by PubChem
The half-life and atomic mass data was provided by the Atomic Mass Data Center at the International Atomic Energy Agency.
Element data are cited from the Atomic weights of the elements (an IUPAC Technical Report). The IUPAC periodic table of elements can be found at https://iupac.org/what-we-do/periodic-table-of-elements/. Additional information can be found within IUPAC publication doi:10.1515/pac-2015-0703 Copyright © 2020 International Union of Pure and Applied Chemistry.
The information are cited from Pure Appl. Chem. 2018; 90(12): 1833-2092, https://doi.org/10.1515/pac-2015-0703.
Thomas Jefferson National Accelerator Facility (Jefferson Lab) is one of 17 national laboratories funded by the U.S. Department of Energy. The lab's primary mission is to conduct basic research of the atom's nucleus using the lab's unique particle accelerator, known as the Continuous Electron Beam Accelerator Facility (CEBAF). For more information visit https://www.jlab.org/
The periodic table at the LANL (Los Alamos National Laboratory) contains basic element information together with the history, source, properties, use, handling and more. The provenance data may be found from the link under the source name.
The periodic table contains NIST's critically-evaluated data on atomic properties of the elements. The provenance data that include data for atomic spectroscopy, X-ray and gamma ray, radiation dosimetry, nuclear physics, and condensed matter physics may be found from the link under the source name. Ref: https://www.nist.gov/pml/atomic-spectra-database
This section provides all form of data related to element Gallium.
The element property data was retrieved from publications.