Silicon (Si)
metalloidSolid
प्रमाणित अणुभार
28.085 u [२८.०८४, २८.०८६]इलेक्ट्रॉन संरूपण
[Ne] 3s2 3p2द्रवणांक
1413.85 °Cउत्कलनांक
3264.85 °Cघनता
2329.6 kg/m³ऑक्सिडीकरण अवस्था
−4, −3, −2, −1, 0, +1, +2, +3, +4विद्युतऋणता (पॉलिंग)
1.9आयनीकरण ऊर्जा (पहिली)
8.15168 eVशोधाचे वर्ष
1824अणुत्रिज्या
110 pmतपशील
Silicon is a hard, brittle metalloid in group 14. It is tetravalent in most compounds and forms strong bonds to oxygen, making silicates the dominant minerals of Earth’s crust. Elemental silicon is central to modern electronics because its oxide, silicon dioxide, can be grown as a stable insulating layer. In bulk chemistry it is less reactive than carbon at ordinary temperatures, but it dissolves or reacts under strongly alkaline, oxidizing, or high-temperature conditions.
Crystalline silicon has a metallic luster and grayish color. Silicon is a relatively inert element, but it is attacked by halogens and dilute alkali. Most acids, except hydrofluoric, do not affect it. Elemental silicon transmits more than 95% of all wavelengths of infrared, from 1.3 to 6.y micro-m.
The name derives from the Latin silex and silicis for "flint". Amorphous silicon was discovered by the Swedish chemist Jöns Jacob Berzelius in 1824. Crystalline silicon was first prepared by the French chemist Henri Sainte-Claire Deville in 1854.
Silicon was discovered by Jöns Jacob Berzelius, a Swedish chemist, in 1824 by heating chips of potassium in a silica container and then carefully washing away the residual by-products. Silicon is the seventh most abundant element in the universe and the second most abundant element in the earth's crust. Today, silicon is produced by heating sand (SiO2) with carbon to temperatures approaching 2200°C.
From the Latin. word silex, silicis, flint. In 1800, Davy thought silica to be a compound and not an element; but in 1811, Gay Lussac and Thenard probably prepared impure amorphous silicon by heating potassium with silicon tetrafluoride.
In 1824 Berzelius, generally credited with the discovery, prepared amorphous silicon by the same general method and purified the product by removing the fluosilicates by repeated washings. Deville in 1854 first prepared crystalline silicon, the second allotropic form of the element.
Pure crystalline silicon is a dark gray solid with a metallic luster and a diamond-cubic structure. It is brittle rather than malleable. Amorphous silicon is usually a brown to dark gray powder or thin film, with properties that depend strongly on preparation.
High-purity silicon is used for integrated circuits, power electronics, sensors, and photovoltaic cells. Lower-purity metallurgical silicon is used to make aluminum-silicon casting alloys, silicones, silanes, and silica-derived materials. Ferrosilicon is an important deoxidizer and alloying additive in steelmaking. Silicon carbide abrasives and refractories are often produced from silica and carbon, but their use depends on the compound rather than the free element.
Two allotropes of silicon exist at room temperature: amorphous and crystalline. Amorphous appears as a brown powder while crystalline silicon has a metallic luster and a grayish color. Single crystals of crystalline silicon can be grown with a process known as the Czochralski process. These crystals, when doped with elements such as boron, gallium, germanium, phosphorus or arsenic, are used in the manufacture of solid-state electronic devices, such as transistors, solar cells, rectifiers and microchips.
Silicon dioxide (SiO2), silicon's most common compound, is the most abundant compound in the earth's crust. It commonly takes the form of ordinary sand, but also exists as quartz, rock crystal, amethyst, agate, flint, jasper and opal. Silicon dioxide is extensively used in the manufacture of glass and bricks. Silica gel, a colloidal form of silicon dioxide, easily absorbs moisture and is used as a desiccant.
Silicon forms other useful compounds. Silicon carbide (SiC) is nearly as hard as diamond and is used as an abrasive. Sodium silicate (Na2SiO3), also known as water glass, is used in the production of soaps, adhesives and as an egg preservative. Silicon tetrachloride (SiCl4) is used to create smoke screens. Silicon is also an important ingredient in silicone, a class of material that is used for such things as lubricants, polishing agents, electrical insulators and medical implants.
Silicon is one of man's most useful elements. In the form of sand and clay it is used to make concrete and brick; it is a useful refractory material for high-temperature work, and in the form of silicates it is used in making enamels, pottery, etc. Silica, as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Glass can be made in a very great variety of shapes, and is used as containers, window glass, insulators, and thousands of other uses. Silicon tetrachloride can be used as iridize glass.
Hyperpure silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics and space-age industries.
Hydrogenated amorphous silicon has shown promise in producing economical cells for converting solar energy into electricity.
Silicon is important to plant and animal life. Diatoms in both fresh and salt water extract Silica from the water to build their cell walls. Silica is present in the ashes of plants and in the human skeleton. Silicon is an important ingredient in steel; silicon carbide is one of the most important abrasives and has been used in lasers to produce coherent light of 4560 A.
Silcones are important products of silicon. They may be prepared by hydrolyzing a silicon organic chloride, such as dimethyl silicon chloride. Hydrolysis and condensation of various substituted chlorosilanes can be used to produce a very great number of polymeric products, or silicones, ranging from liquids to hard, glasslike solids with many useful properties.
Isotopes in Earth/Planetary Science
Because molecules, atoms, and ions of the stable isotopes of silicon possess slightly different physical and chemical properties, they commonly will be fractionated during physical, chemical, and biological processes, giving rise to variations in isotopic abundances and in atomic weights. There are substantial variations in the isotopic abundances of silicon in natural terrestrial materials (Fig. IUPAC.14.1). These variations are useful in investigating the origin of substances and studying environmental, hydrological, and geological processes [13] M. W. Wieser, T. B. Coplen. Pure Appl Chem.83, 359 (2011)., [17] T. B. Coplen, J. A. Hopple, J. K. Böhlke, H. S. Peiser, S. E. Rieder, H. R. Krouse, K. J. R. Rosman, T. Ding, R. D. Vocke, K. Revesz, A. Lamberty, P. D. P. Taylor, P. D. Bièvre. United States Geological Survey Water-Resources Investigations Report, 01-4222, (2002).. Diatoms, a major group of algae, need silicon to build up their opaline shells and prefer 28Si while taking up Si(OH)4, which is the biologically available form of silicon in the marine environment. This progressively enriches surface waters with 29Si and 30Si [123] S. Kristiansen, T. Farbrot, L. J. Naustvoll. Limnol. Oceanogr.45, 472 (2000).. 32Si-labeled silicic acid of high specific radioactivity is used to measure uptake rates of Si and estimate marine sedimentation of biogenic (created by living organisms) silica (by diatoms and sea shells). By performing uptake kinetic experiments, the 32Si activity can be measured as 32P using counting of Cherenkov radiation (radiation produced by charged particles passing through a medium at a speed greater than that of light through the same medium — after Soviet physicist Pavel A. Cherenkov) with a liquid scintillation analyzer (measuring ionizing radiation using the interaction of radiation on a material and counting the resulting photon emissions).
Isotopes in Geochronology
Cosmogenic 32Si has a half-life of about 150 years and is produced by cosmic-ray spallation of argon in the stratosphere and troposphere [124] C. Schnabel, J. Beer, H. B. Clausen. Geophys. Res. Abstr.11, (2009).. 32Si in dust is precipitated in snow, making it possible to date dust in snow and glacial ice (Fig. IUPAC.14.2). Glaciers are archives for global climate history because they contain a variety of proxies (imprints of past environmental conditions used to interpret paleoclimate) for climate forcing and climate response. Cosmogenic 32Si that is stored in glaciers and ice-core samples can be analyzed using accelerator mass spectrometry to date when sections of glaciers formed [125] SAHRA – Sustainability of Semi-Arid Hydrology and Riparian Areas. Silicon, SAHRA – Sustainability of Semi-Arid Hydrology and Riparian Areas (2014), Feb. 24; http://web.sahra.arizona.edu/programs/isotopes/silicon.html., [126] GNS Science. Climate Change Studies & Ice Core Research, GNS Science (2014), Feb. 24; http://www.gns.cri.nz/Home/Services/Laboratories-Facilities/Tritium-and-Water-Dating-Laboratory/Research-Programmes/Climate-change-studies-ice-core-research..
Isotopes in Industry
At Keio University in Japan, the Itoh Research Group has developed a method that utilizes 29Si to store and process information. The Itoh Research Group focused on manipulating the nanostructure of materials at an atomic level, especially with semiconductors such as silicon. Their manipulations and observations demonstrate that differences in the nuclear spin and mass of an isotope affects the ease of further manipulation of the isotope [128] Kohei ITOH research group at Keio University, Japan. Itoh Group at Keio University, Japan, Kohei ITOH research group at Keio University, Japan (2014), Feb. 24; http://www.appi.keio.ac.jp/Itoh_group/research/., [129] T. Itahashi, H. Hayashi, M. R. Rahman, K. M. Itoh, L. S. Vlasenko, M. P. Vlasenko, D. S. Poloskin. Phys. Rev. B87, 075201-1 (2013)..
Silicon crystals enriched to higher than 99.99 percent purity of 28Si are being used in the Avogadro Project. This project is intended to remeasure the Avogadro constant (NA), which is the proportionality factor between the amount of substance and number of elementary entities [130] R. Marquardt, J. Meija, Z. Mester, M. Towns, R. Weir, R. Davis, J. Stohner. Pure Appl. Chem.90, 175 (2018)..
Silicon chemistry is dominated by the +4 oxidation state, although lower formal states occur in some silicides and specialized molecular compounds. Silicon dioxide, SiO₂, occurs as quartz and many other forms and is the basis of glass, ceramics, and semiconductor gate oxides. Silicates contain SiO₄ tetrahedra in isolated, chain, sheet, or framework arrangements. Silicon tetrachloride, SiCl₄, and trichlorosilane, HSiCl₃, are important intermediates for purified silicon and organosilicon chemistry. Silicones contain Si–O backbones with organic substituents.
See more information at the Silicon compound page.
Bulk crystalline silicon has low chemical toxicity, but fine silicon dust can irritate the eyes and respiratory tract and may pose dust-explosion risks in air. Inhalation hazards are more serious for respirable crystalline silica, SiO₂, which can cause silicosis; that risk belongs to the oxide, not elemental silicon. Silanes such as silane, SiH₄, can be pyrophoric or highly flammable. Semiconductor processing also involves corrosive and toxic reagents not inherent to silicon itself.
Miners, stonecutters, and others engaged in work where siliceous dust is breathed into large quantities often develop a serious lung disease known as silicosis.
Silicon is a major component of soils, rocks, clays, and natural waters, mostly as silicates and dissolved silicic acid, H₄SiO₄. Weathering releases soluble silicon, which rivers carry to lakes and oceans. Diatoms, radiolarians, and some plants use silica biomineralization, linking silicon to biological and sedimentary cycles. Elemental silicon is not persistent as a native environmental material under surface conditions.
Silicon is produced industrially by reducing quartz or other high-silica feedstocks with carbon in electric arc furnaces, yielding metallurgical-grade material. Semiconductor and solar uses require further purification and crystal growth or deposition, which are energy- and capital-intensive steps. Demand is split between large-volume alloy and chemical markets and smaller but very high-purity electronic markets. Recycling occurs in aluminum alloys and semiconductor manufacturing scrap, but end-of-life recovery from complex electronics is limited by dilution and contamination.
Silicon is present in the sun and stars and is a principal component of a class of meteorites known as aerolites. It is also a component of tektites, a natural glass of uncertain origin.
Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, being exceeded only by oxygen. Silicon is not found free in nature, but occurs chiefly as the oxide and as silicates. Sand, quartz, rock crystal, amethyst, agate, flint, jasper, and opal are some of the forms in which the oxide appears. Granite, hornblende, asbestos, feldspar, clay, mica, etc. are but a few of the numerous silicate minerals.
Silicon is prepared commercially by heating silica and carbon in an electric furnace, using carbon electrodes. Several other methods can be used for preparing the element. Amorphous silicon can be prepared as a brown powder, which can be easily melted or vaporized. The Czochralski process is commonly used to produce single crystals of silicon used for solid-state or semiconductor devices. Hyperpure silicon can be prepared by the thermal decomposition of ultra-pure trichlorosilane in a hydrogen atmosphere, and by a vacuum float zone process.
Silicon is among the more abundant heavy elements in the cosmos. It is formed in massive stars during advanced burning stages and is further redistributed by supernovae. In rocky planets and meteorites it is chiefly bound with oxygen and metals as silicate minerals. Spectral features of silicate dust are common in interstellar and circumstellar environments.
- The natural oxide on silicon is only a few nanometers thick but is chemically important.
- Ultra-pure silicon crystals can be grown with impurity levels far below one part per billion.
- Dopants such as boron or phosphorus control whether silicon behaves as p-type or n-type semiconductor material.
- Many common gemstones, including quartz varieties, are forms or mixtures dominated by SiO₂.
- Silicon expands on freezing, like water and a few other substances.
प्रतिमा
गुणधर्म
भौतिक
- अणुत्रिज्या (अनुभवाधारित)
- 110 pm सर्व घटकांच्या अणुत्रिज्या (अनुभवाधारित) ची तुलना करा →
- सहसंयुजी त्रिज्या
- 111 pm सर्व घटकांच्या सहसंयुजी त्रिज्या ची तुलना करा →
- व्हॅन डर वाल्स त्रिज्या
- 210 pm सर्व घटकांच्या व्हॅन डर वाल्स त्रिज्या ची तुलना करा →
- धात्विक त्रिज्या
- 117 pm सर्व घटकांच्या धात्विक त्रिज्या ची तुलना करा →
- घनता
- 2329.6 kg/m³ सर्व घटकांच्या घनता ची तुलना करा →
- मोलर आयतन
- 0.0121 L/mol
- STP येथे अवस्था
- घन सर्व घटकांच्या STP येथे अवस्था ची तुलना करा →
- द्रवणांक
- 1413.85 °C सर्व घटकांच्या द्रवणांक ची तुलना करा →
- उत्कलनांक
- 3264.85 °C सर्व घटकांच्या उत्कलनांक ची तुलना करा →
- उष्णता चालकता
- 149 W/(m·K) सर्व घटकांच्या उष्णता चालकता ची तुलना करा →
- विशिष्ट उष्माधारकता
- 0.712 J/(g·K) सर्व घटकांच्या विशिष्ट उष्माधारकता ची तुलना करा →
- मोलर उष्माधारकता
- 19.99 J/(mol·K) सर्व घटकांच्या मोलर उष्माधारकता ची तुलना करा →
- स्फटिक संरचना
- हिऱ्यासारखी घनीय सर्व घटकांच्या स्फटिक संरचना ची तुलना करा →
रासायनिक
- विद्युतऋणता (पॉलिंग)
- 1.9 सर्व घटकांच्या विद्युतऋणता (पॉलिंग) ची तुलना करा →
- विद्युतऋणता (ॲलन)
- 1.916
- इलेक्ट्रॉन आसक्ती
- 1.385 eV
- आयनीकरण ऊर्जा (पहिली)
- 8.15168 eV सर्व घटकांच्या आयनीकरण ऊर्जा (पहिली) ची तुलना करा →
- आयनीकरण ऊर्जा (दुसरी)
- 16.345906 eV सर्व घटकांच्या आयनीकरण ऊर्जा (दुसरी) ची तुलना करा →
- आयनीकरण ऊर्जा (तिसरी)
- 33.493115 eV सर्व घटकांच्या आयनीकरण ऊर्जा (तिसरी) ची तुलना करा →
- आयनीकरण ऊर्जा (चौथी)
- 45.141945 eV सर्व घटकांच्या आयनीकरण ऊर्जा (चौथी) ची तुलना करा →
- आयनीकरण ऊर्जा (पाचवी)
- 166.767574 eV सर्व घटकांच्या आयनीकरण ऊर्जा (पाचवी) ची तुलना करा →
- ऑक्सिडीकरण अवस्था
- −4, −3, −2, −1, 0, +1, +2, +3, +4 सर्व घटकांच्या ऑक्सिडीकरण अवस्था ची तुलना करा →
- संयुजा इलेक्ट्रॉन
- 4 सर्व घटकांच्या संयुजा इलेक्ट्रॉन ची तुलना करा →
- इलेक्ट्रॉन संरूपण
- [Ne] 3s2 3p2
उष्मागतिक
- द्रवण उष्मा
- 0.52039177 eV सर्व घटकांच्या द्रवण उष्मा ची तुलना करा →
- बाष्पीभवन उष्मा
- 3.720786 eV सर्व घटकांच्या बाष्पीभवन उष्मा ची तुलना करा →
- संप्लवन उष्मा
- 4.670778 eV
- अणूकरण उष्मा
- 4.670778 eV
- अणूकरण एन्थाल्पी
- 4.663937 eV
केंद्रकीय
- प्रोटॉन
- 14 सर्व घटकांच्या प्रोटॉन ची तुलना करा →
- न्यूट्रॉन
- 14 सर्व घटकांच्या न्यूट्रॉन ची तुलना करा →
- ज्ञात समस्थानिके
- 24 सर्व घटकांच्या ज्ञात समस्थानिके ची तुलना करा →
- स्थिर समस्थानिके
- 3 सर्व घटकांच्या स्थिर समस्थानिके ची तुलना करा →
- सर्वाधिक स्थिर समस्थानिक
- Si-28
- शोधाचे वर्ष
- 1824
विपुलता
- विपुलता (पृथ्वीचे कवच)
- 2.82e+5 mg/kg सर्व घटकांच्या विपुलता (पृथ्वीचे कवच) ची तुलना करा →
- विपुलता (महासागर)
- 2.2 mg/L सर्व घटकांच्या विपुलता (महासागर) ची तुलना करा →
स्फटिक संरचना
- जालक स्थिरांक a
- 543 pm
इलेक्ट्रॉन संरचना
- प्रत्येक कवचातील इलेक्ट्रॉन
- 2, 8, 4 सर्व घटकांच्या प्रत्येक कवचातील इलेक्ट्रॉन ची तुलना करा →
ओळखचिन्हे
- CAS क्रमांक
- 7440-21-3 सर्व घटकांच्या CAS क्रमांक ची तुलना करा →
- टर्म चिन्ह
- 3P0
- InChI
- InChI=1S/Si
- InChI की
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N
इलेक्ट्रॉन संरूपण मोजलेले
Si: 3s² 3p²[Ne] 3s² 3p²1s² 2s² 2p⁶ 3s² 3p²अणुप्रतिमान
समस्थानिकांमुळे न्यूट्रॉन संख्या, वस्तुमान आणि स्थैर्य बदलते — विद्युतदृष्ट्या उदासीन अणूचे इलेक्ट्रॉन संरूपण बदलत नाही.
योजनात्मक अणुप्रतिमान, प्रमाणानुसार नाही.
अणूची विशिष्ट ओळख
उत्सर्जन / शोषण वर्णपट
समस्थानिक वितरण
| वस्तुमानांक | अणुवस्तुमान (u) | नैसर्गिक विपुलता | अर्धायुष्य |
|---|---|---|---|
| 28 स्थिर | २७.९७६९२६५३४६५ ± ०.०००००००००४४ | 92.2230% | स्थिर |
| 29 स्थिर | २८.९७६४९४६६४९ ± ०.०००००००००५२ | 4.6850% | स्थिर |
| 30 स्थिर | २९.९७३७७०१३६ ± ०.०००००००२३ | 3.0920% | स्थिर |
अवस्था / स्थिती
कारण: द्रवणांकापेक्षा (1413.85 °C) 1388.8 °C कमी
योजनात्मक, प्रमाणानुसार नाही
अवस्थांतर बिंदू
अवस्थांतर ऊर्जा
द्रवणांकावर 1 mol वितळवण्यासाठी आवश्यक ऊर्जा
उत्कलनांकावर 1 mol चे बाष्पीभवन करण्यासाठी आवश्यक ऊर्जा
संप्लवनांकावर 1 mol चे संप्लवन करण्यासाठी आवश्यक ऊर्जा
घनता
प्रमाणित परिस्थितीत
प्रमाणित परिस्थितीत
अणुवर्णपट
14 पैकी 10 दाखवले आहेत. आयनाच्या विद्युतभारानुसार चढत्या क्रमाने मांडलेले.
वर्णरेषांचा संग्रह ?
| आयन | विद्युतभार | एकूण वर्णरेषा | संक्रमण संभाव्यता | पातळ्यांची नामांकने |
|---|---|---|---|---|
| Si I | 0 | 754 | 639 | 640 |
| Si II | +1 | 590 | 474 | 474 |
| Si III | +2 | 1298 | 1288 | 1288 |
| Si IV | +3 | 332 | 314 | 314 |
| Si V | +4 | 151 | 143 | 143 |
| Si VI | +5 | 346 | 346 | 346 |
| Si VII | +6 | 233 | 233 | 233 |
| Si VIII | +7 | 269 | 269 | 269 |
| Si IX | +8 | 366 | 366 | 366 |
| Si X | +9 | 315 | 315 | 315 |
ऊर्जा पातळ्यांचा संग्रह ?
| आयन | विद्युतभार | पातळ्या |
|---|---|---|
| Si I | 0 | 542 |
| Si II | +1 | 151 |
| Si III | +2 | 189 |
| Si IV | +3 | 55 |
| Si V | +4 | 99 |
| Si VI | +5 | 72 |
| Si VII | +6 | 65 |
| Si VIII | +7 | 60 |
| Si IX | +8 | 67 |
| Si X | +9 | 55 |
आयनिक त्रिज्या
| विद्युतभार | समन्वय | प्रचक्रण | त्रिज्या |
|---|---|---|---|
| +4 | 4 | उपलब्ध नाही | 26 pm |
| +4 | 6 | उपलब्ध नाही | 40 pm |
संयुगे
समस्थानिके (3)
| वस्तुमानांक | अणुवस्तुमान (u) | नैसर्गिक विपुलता | अर्धायुष्य | क्षय प्रकार | |
|---|---|---|---|---|---|
| 28 स्थिर | २७.९७६९२६५३४६५ ± ०.०००००००००४४ | 92.2230% ± 0.0190% | स्थिर | stable | |
| 29 स्थिर | २८.९७६४९४६६४९ ± ०.०००००००००५२ | 4.6850% ± 0.0080% | स्थिर | stable | |
| 30 स्थिर | २९.९७३७७०१३६ ± ०.०००००००२३ | 3.0920% ± 0.0110% | स्थिर | stable |
वर्णरेषा
474 पैकी 50 दाखवले आहेत. मूलभूत सेटिंगनुसार केवळ मोजलेली तीव्रता असलेल्या वर्णरेषा दाखवल्या जातात.
| तरंगलांबी (nm) | तीव्रता | आयनीकरण टप्पा | प्रकार | संक्रमण | अचूकता | स्रोत | |
|---|---|---|---|---|---|---|---|
| 504.1024 nm | 1000 | Si II | emission | 3s2.4p 2P* → 3s2.4d 2D | मोजलेले | NIST | |
| 505.5984 nm | 1000 | Si II | emission | 3s2.4p 2P* → 3s2.4d 2D | मोजलेले | NIST | |
| 634.711 nm | 1000 | Si II | emission | 3s2.4s 2S → 3s2.4p 2P* | मोजलेले | NIST | |
| 637.137 nm | 1000 | Si II | emission | 3s2.4s 2S → 3s2.4p 2P* | मोजलेले | NIST | |
| 595.756 nm | 500 | Si II | emission | 3s2.4p 2P* → 3s2.5s 2S | मोजलेले | NIST | |
| 597.893 nm | 500 | Si II | emission | 3s2.4p 2P* → 3s2.5s 2S | मोजलेले | NIST | |
| 390.55231 nm | 300 | Si I | emission | 3s2.3p2 1S → 3s2.3p.4s 1P* | मोजलेले | NIST | |
| 594.8541 nm | 200 | Si I | emission | 3s2.3p.4s 1P* → 3s2.3p.5p 1D | मोजलेले | NIST | |
| 700.3569 nm | 180 | Si I | emission | 3s2.3p.4p 3D → 3s2.3p.6d 3F* | मोजलेले | NIST | |
| 700.588 nm | 180 | Si I | emission | 3s2.3p.4p 3D → 3s2.3p.6d 3F* | मोजलेले | NIST | |
| 570.84 nm | 160 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | मोजलेले | NIST | |
| 462.1722 nm | 150 | Si II | emission | 3s2.4d 2D → 3s2.7f 2F* | मोजलेले | NIST | |
| 568.4484 nm | 120 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3S | मोजलेले | NIST | |
| 462.1418 nm | 100 | Si II | emission | 3s2.4d 2D → 3s2.7f 2F* | मोजलेले | NIST | |
| 569.0425 nm | 100 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | मोजलेले | NIST | |
| 579.7856 nm | 100 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3D | मोजलेले | NIST | |
| 667.184 nm | 100 | Si II | emission | 3s.3p.(3P*).4s 4P* → 3s.3p.(3P*).4p 4D | मोजलेले | NIST | |
| 672.1848 nm | 100 | Si I | emission | 3s2.3p.4p 1P → 3s2.3p.6d 1D* | मोजलेले | NIST | |
| 564.5613 nm | 90 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | मोजलेले | NIST | |
| 570.1104 nm | 90 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | मोजलेले | NIST | |
| 579.3073 nm | 90 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3D | मोजलेले | NIST | |
| 479.2324 nm | 80 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.(2P*<3/2>).6p<1/2> (3/2,1/2) | मोजलेले | NIST | |
| 566.5555 nm | 80 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | मोजलेले | NIST | |
| 697.651 nm | 80 | Si I | emission | 3s2.3p.4p 3D → 3s2.3p.6d 3F* | मोजलेले | NIST | |
| 410.29359 nm | 70 | Si I | emission | 3s2.3p2 1S → 3s2.3p.4s 3P* | मोजलेले | NIST | |
| 577.2146 nm | 70 | Si I | emission | 3s2.3p.4s 1P* → 3s2.3p.5p 1S | मोजलेले | NIST | |
| 578.0384 nm | 70 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3D | मोजलेले | NIST | |
| 719.355 nm | 65 | Si I | emission | 3s2.3p.4p 3P → 3s2.3p.6d 3D* | मोजलेले | NIST | |
| 478.2991 nm | 50 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.(2P*<3/2>).6p<1/2> (3/2,1/2) | मोजलेले | NIST | |
| 682.983 nm | 50 | Si II | emission | 3s2.5p 2P* → 3s2.6d 2D | मोजलेले | NIST | |
| 575.4218 nm | 45 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | मोजलेले | NIST | |
| 633.1956 nm | 45 | Si I | emission | 3s2.3p.4s 1P* → 3s2.3p.5p 1P | मोजलेले | NIST | |
| 655.5463 nm | 45 | Si I | emission | 3s2.3p.4p 3D → 3s2.3p.7d 3F* | मोजलेले | NIST | |
| 500.6059 nm | 40 | Si I | emission | 3s2.3p.4s 1P* → 3s2.3p.(2P*<3/2>).6p<3/2> (3/2,3/2) | मोजलेले | NIST | |
| 479.2213 nm | 35 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.(2P*<1/2>).6p<1/2> (1/2,1/2) | मोजलेले | NIST | |
| 380.6526 nm | 30 | Si III | emission | 3s.4p 3P* → 3s.4d 3D | मोजलेले | NIST | |
| 455.2622 nm | 30 | Si III | emission | 3s.4s 3S → 3s.4p 3P* | मोजलेले | NIST | |
| 494.7607 nm | 30 | Si I | emission | 3s2.3p.4s 1P* → 3s2.3p.(2P*<3/2>).6p<3/2> (3/2,3/2) | मोजलेले | NIST | |
| 562.222 nm | 30 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3S | मोजलेले | NIST | |
| 681.841 nm | 30 | Si II | emission | 3s2.5p 2P* → 3s2.6d 2D | मोजलेले | NIST | |
| 456.784 nm | 25 | Si III | emission | 3s.4s 3S → 3s.4p 3P* | मोजलेले | NIST | |
| 392.4468 nm | 20 | Si III | emission | 3s.4f 1F* → 3s.5g 1G | मोजलेले | NIST | |
| 457.4757 nm | 20 | Si III | emission | 3s.4s 3S → 3s.4p 3P* | मोजलेले | NIST | |
| 573.973 nm | 20 | Si III | emission | 3s.4s 1S → 3s.4p 1P* | मोजलेले | NIST | |
| 669.94 nm | 20 | Si II | emission | 3s.3p.(3P*).4s 4P* → 3s.3p.(3P*).4p 4D | मोजलेले | NIST | |
| 482.895 nm | 18 | Si III | emission | 3s.4f 3F* → 3s.5g 3G | मोजलेले | NIST | |
| 471.6654 nm | 16 | Si III | emission | 3s.4d 1D → 3s.5f 1F* | मोजलेले | NIST | |
| 481.9712 nm | 16 | Si III | emission | 3s.4f 3F* → 3s.5g 3G | मोजलेले | NIST | |
| 481.3333 nm | 15 | Si III | emission | 3s.4f 3F* → 3s.5g 3G | मोजलेले | NIST | |
| 666.503 nm | 15 | Si II | emission | 3s.3p.(3P*).4s 4P* → 3s.3p.(3P*).4p 4D | मोजलेले | NIST |
विस्तारित गुणधर्म
सहसंयुजी त्रिज्या (विस्तारित)
- सहसंयुजी त्रिज्या (प्युक्को)
- 116 pm
- सहसंयुजी त्रिज्या (प्युक्को, दुहेरी बंध)
- 107 pm
- सहसंयुजी त्रिज्या (प्युक्को, तिहेरी बंध)
- 102 pm
- सहसंयुजी त्रिज्या (ब्रॅग)
- 117 pm
व्हॅन डर वाल्स त्रिज्या
- Bondi
- 210 pm
- Batsanov
- 210 pm
- Alvarez
- 219 pm
- UFF
- 429.5 pm
- MM3
- 229 pm
- Dreiding
- 427 pm
अणुत्रिज्या आणि धात्विक त्रिज्या
- अणुत्रिज्या (राह्म)
- 232 pm
- धात्विक त्रिज्या (C12)
- 138 pm
क्रमांकन मापनपट्ट्या
- Mendeleev
- 88
- Pettifor
- 85
- Glawe
- 85
विद्युतऋणता मापनपट्ट्या
- Ghosh
- 0
- Miedema
- 5
- Gunnarsson–Lundqvist
- 5
- Robles–Bartolotti
- 4
ध्रुवणक्षमता आणि अपस्करण
- द्विध्रुव ध्रुवणक्षमता
- 37.3 a.u.
- द्विध्रुव ध्रुवणक्षमता (अनिश्चितता)
- 0.7 a.u.
- C₆
- 305 Ha·Bohr6
- C₆ (Gould–Bučko)
- 308 Ha·Bohr6
रासायनिक आसक्ती
- प्रोटॉन आसक्ती
- 837 kJ/mol
- वायूची क्षारकता
- 814.1 kJ/mol
मिडेमा प्राचल
- मिडेमा मोलर आयतन
- 8.6 cm3/mol
- मिडेमा इलेक्ट्रॉन घनता
- 3
अवस्थांतरे आणि अपरूपे
| द्रवणांक | 1687.15 K |
| उत्कलनांक | 3538.15 K |
ऑक्सिडीकरण अवस्थांचे वर्ग
प्रगत संदर्भ माहिती
परिरक्षण स्थिरांक (5)
| n | कक्षिका | σ |
|---|---|---|
| 1 | s | 0.4255 |
| 2 | p | 4.055 |
| 2 | s | 4.98 |
| 3 | p | 9.7148 |
| 3 | s | 9.0968 |
स्फटिक त्रिज्यांचा तपशील (2)
| विद्युतभार | CN | प्रचक्रण | rcrystal (pm) | उत्पत्ती |
|---|---|---|---|---|
| 4 | IV | 40 | ||
| 4 | VI | 54 | from r^3 vs V plots, |
समस्थानिक क्षय प्रकार (46)
| समस्थानिक | मोड | तीव्रता |
|---|---|---|
| 22 | B+ | 100% |
| 22 | B+p | 62% |
| 22 | 2p | 0.7% |
| 23 | B+ | 100% |
| 23 | B+p | 88% |
| 23 | 2p | 3.6% |
| 24 | B+ | 100% |
| 24 | B+p | 34.5% |
| 25 | B+ | 100% |
| 25 | B+p | 35% |
क्ष-किरण प्रकीर्णन गुणक (756)
| ऊर्जा (eV) | f₁ | f₂ |
|---|---|---|
| 10 | — | 3.94851 |
| 10.1617 | — | 3.95531 |
| 10.3261 | — | 3.96212 |
| 10.4931 | — | 3.96894 |
| 10.6628 | — | 3.97577 |
| 10.8353 | — | 3.98262 |
| 11.0105 | — | 3.98948 |
| 11.1886 | — | 3.99635 |
| 11.3696 | — | 4.00322 |
| 11.5535 | — | 4.01012 |
अतिरिक्त माहिती
Estimated Crustal Abundance
The estimated element abundance in the earth's crust.
2.82×105 milligrams per kilogram
संदर्भ (1)
Estimated Oceanic Abundance
The estimated element abundance in the earth's oceans.
2.2 milligrams per liter
संदर्भ (1)
Sources
Sources of this element.
Silicon is present in the sun and stars and is a principal component of a class of meteorites known as aerolites. It is also a component of tektites, a natural glass of uncertain origin.
Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, being exceeded only by oxygen. Silicon is not found free in nature, but occurs chiefly as the oxide and as silicates. Sand, quartz, rock crystal, amethyst, agate, flint, jasper, and opal are some of the forms in which the oxide appears. Granite, hornblende, asbestos, feldspar, clay, mica, etc. are but a few of the numerous silicate minerals.
Silicon is prepared commercially by heating silica and carbon in an electric furnace, using carbon electrodes. Several other methods can be used for preparing the element. Amorphous silicon can be prepared as a brown powder, which can be easily melted or vaporized. The Czochralski process is commonly used to produce single crystals of silicon used for solid-state or semiconductor devices. Hyperpure silicon can be prepared by the thermal decomposition of ultra-pure trichlorosilane in a hydrogen atmosphere, and by a vacuum float zone process.
संदर्भ (1)
- [6] Silicon https://periodic.lanl.gov/14.shtml
संदर्भ
(9)
Data deposited in or computed by PubChem
The half-life and atomic mass data was provided by the Atomic Mass Data Center at the International Atomic Energy Agency.
Element data are cited from the Atomic weights of the elements (an IUPAC Technical Report). The IUPAC periodic table of elements can be found at https://iupac.org/what-we-do/periodic-table-of-elements/. Additional information can be found within IUPAC publication doi:10.1515/pac-2015-0703 Copyright © 2020 International Union of Pure and Applied Chemistry.
The information are cited from Pure Appl. Chem. 2018; 90(12): 1833-2092, https://doi.org/10.1515/pac-2015-0703.
Thomas Jefferson National Accelerator Facility (Jefferson Lab) is one of 17 national laboratories funded by the U.S. Department of Energy. The lab's primary mission is to conduct basic research of the atom's nucleus using the lab's unique particle accelerator, known as the Continuous Electron Beam Accelerator Facility (CEBAF). For more information visit https://www.jlab.org/
The periodic table at the LANL (Los Alamos National Laboratory) contains basic element information together with the history, source, properties, use, handling and more. The provenance data may be found from the link under the source name.
The periodic table contains NIST's critically-evaluated data on atomic properties of the elements. The provenance data that include data for atomic spectroscopy, X-ray and gamma ray, radiation dosimetry, nuclear physics, and condensed matter physics may be found from the link under the source name. Ref: https://www.nist.gov/pml/atomic-spectra-database
This section provides all form of data related to element Silicon.
The element property data was retrieved from publications.