B 5

Boron (B)

metalloid
주기: 2 족: 13 블록: p

Solid

표준 원자량

10.81 u [10.806, 10.821]

전자 배치

[He] 2s2 2p1

녹는점

2074.85 °C

끓는점

3999.85 °C

밀도

2370 kg/m³

산화 상태

−5, −1, 0, +1, +2, +3

전기 음성도(Pauling)

2.04

제1 이온화 에너지

8.298019 eV

발견 연도

1808

원자 반지름

85 pm

상세 정보

이름의 유래 From Arabic and Persian words for borax.
발견 국가 England/France
발견자 Sir H. Davy, J.L. Gay-Lussac, L.J. Thénard

Boron is a light metalloid in group 13, notable for electron-deficient bonding and a rich cluster chemistry. It occurs naturally only in compounds, mainly as borates in evaporite minerals and brines. Elemental boron is difficult to prepare in high purity and has several allotropes built from B₁₂ icosahedra. Technologically, boron is most important through borate minerals, borosilicate glass, detergents, ceramics, fertilizers, and neutron-absorbing materials.

An element of group 13 of the periodic table. There are two allotropes, amorphous boron is a brown power, but metallic boron is black. The metallic form is hard (9.3 on Mohs' scale) and a bad conductor in room temperatures. It is never found free in nature. Boron-10 is used in nuclear reactor control rods and shields. It was discovered in 1808 by Sir Humphry Davy and by J.L. Gay-Lussac and L.J. Thenard.

The name derives from the Arabic buraq for "white". Although its compounds were known for thousands of years, it was not isolated until 1808 by the French chemists Louis-Joseph Gay-Lussac and Louis-Jacques Thenard.

Boron was discovered by Joseph-Louis Gay-Lussac and Louis-Jaques Thénard, French chemists, and independently by Sir Humphry Davy, an English chemist, in 1808. They all isolated boron by combining boric acid (H3BO3) with potassium. Today, boron is obtained by heating borax (Na2B4O7·10H2O) with carbon, although other methods are used if high-purity boron is required.

From the Arabic word Buraq, Persian Burah. Boron compounds have been known for thousands of years, but the element was not discovered until 1808 by Sir Humphry Davy and by Gay-Lussac and Thenard.

이미지

특성

물리적 특성

원자 반지름(경험값)
85 pm 모든 원소의 원자 반지름(경험값) 비교 →
공유 결합 반지름
84 pm 모든 원소의 공유 결합 반지름 비교 →
반데르발스 반지름
192 pm 모든 원소의 반데르발스 반지름 비교 →
금속 반지름
80 pm 모든 원소의 금속 반지름 비교 →
밀도
2370 kg/m³ 모든 원소의 밀도 비교 →
몰 부피
0.0046 L/mol
STP에서의 상
고체 모든 원소의 STP에서의 상 비교 →
녹는점
2074.85 °C 모든 원소의 녹는점 비교 →
끓는점
3999.85 °C 모든 원소의 끓는점 비교 →
열전도율
27.4 W/(m·K) 모든 원소의 열전도율 비교 →
비열
1.026 J/(g·K) 모든 원소의 비열 비교 →
몰 열용량
11.087 J/(mol·K) 모든 원소의 몰 열용량 비교 →
결정 구조
정방 모든 원소의 결정 구조 비교 →

화학적 특성

전기 음성도(Pauling)
2.04 모든 원소의 전기 음성도(Pauling) 비교 →
전기 음성도(Allen)
2.051
전자 친화도
0.27972 eV
제1 이온화 에너지
8.298019 eV 모든 원소의 제1 이온화 에너지 비교 →
제2 이온화 에너지
25.154917 eV 모든 원소의 제2 이온화 에너지 비교 →
제3 이온화 에너지
37.930721 eV 모든 원소의 제3 이온화 에너지 비교 →
제4 이온화 에너지
259.375272 eV 모든 원소의 제4 이온화 에너지 비교 →
제5 이온화 에너지
340.227194 eV 모든 원소의 제5 이온화 에너지 비교 →
산화 상태
−5, −1, 0, +1, +2, +3 모든 원소의 산화 상태 비교 →
원자가 전자
3 모든 원소의 원자가 전자 비교 →
전자 배치
[He] 2s2 2p1

열역학적 특성

융해열
0.52028813 eV 모든 원소의 융해열 비교 →
기화열
4.974867 eV 모든 원소의 기화열 비교 →
승화열
5.855833 eV
원자화열
5.855833 eV
원자화 엔탈피
5.855833 eV

핵 특성

양성자 수
5 모든 원소의 양성자 수 비교 →
중성자 수
6 모든 원소의 중성자 수 비교 →
알려진 동위원소 수
16 모든 원소의 알려진 동위원소 수 비교 →
안정 동위원소 수
2 모든 원소의 안정 동위원소 수 비교 →
가장 안정한 동위원소
B-11
발견 연도
1808

존재비

존재비(지각)
10 mg/kg 모든 원소의 존재비(지각) 비교 →
존재비(해양)
4.44 mg/L 모든 원소의 존재비(해양) 비교 →

결정 구조

격자 상수 a
873 pm

전자 구조

전자껍질별 전자 수
2, 3 모든 원소의 전자껍질별 전자 수 비교 →

식별자

CAS 등록 번호
7440-42-8 모든 원소의 CAS 등록 번호 비교 →
항 기호
2P°1/2
InChI
InChI=1S/B
InChI 키
ZOXJGFHDIHLPTG-UHFFFAOYSA-N

전자 배치 측정값

이온 전하
양성자 5
전자 5
전하 중성
배치 B: 2s² 2p¹
전자 배치
측정값
[He] 2s² 2p¹
1s² 2s² 2p¹
오비탈 도표
1s
2/2
2s
2/2
2p
1/6 1↑
총 전자 수: 5 홀전자: 1 ?

원자 모형

양성자 5
중성자 6
전자 5
질량수 11
안정성 안정

동위원소에 따라 중성자 수, 질량, 안정성은 달라지지만, 중성 원자의 전자 배치는 달라지지 않습니다.

개략적인 원자 모형이며 실제 비율과 다릅니다.

원자 지문

방출 / 흡수 스펙트럼

25 / 227 (32 세기 정보가 있는 선 32개)
측정값
방출 가시광선: 380–750 nm

동위원소 분포

1180.1000%1019.9000%질량수천연 존재비(%)
질량수원자 질량(u)천연 존재비반감기
10 안정10.01293695 ± 0.0000004119.9000%안정
11 안정11.00930536 ± 0.0000004580.1000%안정
측정값

상 / 상태

1 atm / 101.325 kPa
고체 25 °C (298.15 K)

이유: 녹는점(2074.85 °C)보다 2049.8 °C 낮음

녹는점 2074.85 °C
끓는점 3999.85 °C
녹는점 미달 온도 2049.8 °C
0 K 현재 온도: 25 °C 6000 K
상 변화 도표

개략도이며 실제 비율과 다름

고체
액체
기체
녹는점
끓는점
25°C
고체
액체
기체
현재

상전이점

녹는점 문헌값
2074.85 °C
끓는점 문헌값
3999.85 °C
현재 상 계산값
고체

전이 에너지

융해열 문헌값
0.52028813 eV

녹는점에서 1 mol을 녹이는 데 필요한 에너지

기화열 문헌값
4.974867 eV

끓는점에서 1 mol을 기화시키는 데 필요한 에너지

승화열 문헌값
5.855833 eV

승화점에서 1 mol을 승화시키는 데 필요한 에너지

밀도

기준 밀도 문헌값
2370 kg/m³

표준 조건에서

현재 밀도 계산값
2370 kg/m³

표준 조건에서

원자 스펙트럼

보유 스펙트럼선 데이터 ?

이온전하총 스펙트럼선 수전이 확률준위 표기
B I 0371269371
11B I 동위원소053053
10B I 동위원소011011
B II +1592435592
10B II 동위원소+1909
11B II 동위원소+1909
B III +2390106390
B IV +3478234478
B V +4258240258
NIST 보유 스펙트럼선 데이터 →

보유 에너지 준위 데이터 ?

이온전하준위
B I 0125
11B I 동위원소069
10B I 동위원소029
B II +1157
10B II 동위원소+110
11B II 동위원소+110
B III +2150
B IV +3174
B V +4101
NIST 보유 에너지 준위 데이터 →
5 B 10.8135

Boron — 원자 오비탈 시각화 도구

[He]2s22p1
에너지 준위 2 3
산화 상태 -5, -1, 0, +1, +2, +3
HOMO 2p n=2 · l=1 · m=-1
Boron — 원자 오비탈 시각화 도구 미리보기
Three.js는 요청할 때만 불러옵니다
5 B 10.8135

Boron — 결정 구조 시각화 도구

Trigonal · 피어슨 기호 N/A
실험 기반
피어슨 기호 N/A
Boron — 결정 구조 시각화 도구 미리보기
Three.js는 요청할 때만 불러옵니다

이온 반지름

전하배위스핀반지름
+33해당 없음1 pm
+34해당 없음11 pm
+36해당 없음27 pm

화합물

B
10.810 u
B
10.013 u
B
11.009 u
B-
10.810 u
B
17.047 u
B
12.014 u
B-
10.013 u
B
13.018 u
B-
11.009 u

동위원소 (2)

질량수원자 질량(u)천연 존재비반감기붕괴 방식
10 안정10.01293695 ± 0.0000004119.9000% ± 0.7000%안정
stable
11 안정11.00930536 ± 0.0000004580.1000% ± 0.7000%안정
stable
10 안정
원자 질량(u) 10.01293695 ± 0.00000041
천연 존재비 19.9000% ± 0.7000%
반감기 안정
붕괴 방식
stable
11 안정
원자 질량(u) 11.00930536 ± 0.00000045
천연 존재비 80.1000% ± 0.7000%
반감기 안정
붕괴 방식
stable

스펙트럼선

파장(nm)세기이온화 단계유형전이정확도출처
391.482 nm해당 없음B IIemission1s2.2s.2p 1P* → 1s2.2p2 3P측정값NIST
391.687 nm해당 없음B IIemission1s2.2s.2p 1P* → 1s2.2p2 3P측정값NIST
391.817 nm해당 없음B IIemission1s2.2s.2p 1P* → 1s2.2p2 3P측정값NIST
394.447 nm해당 없음B IIemission1s2.2p.3d 3F* → 1s2.2p.4f 3F측정값NIST
394.587 nm해당 없음B IIemission1s2.2p.3d 3F* → 1s2.2p.4f 3F측정값NIST
394.82 nm해당 없음B IIemission1s2.2p.3d 3F* → 1s2.2p.4f 3F측정값NIST
395.038 nm18B IIemission1s2.2p.3d 1D* → 1s2.2p.4f 1F측정값NIST
395.1698 nm해당 없음B IIemission1s2.2p2 1D → 1s2.2p2 1S측정값NIST
399.024 nm70B IIemission1s2.2s.4p 1P* → 1s2.2s.8d 1D측정값NIST
400.017 nm136B IIIemission1s.2s.(3S).4d 4D → 1s.2s.(3S).5f 4F*측정값NIST
412.1928 nm해당 없음B IIemission1s2.2s.3d 3D → 1s2.2s.4f 3F*측정값NIST
412.1928 nm해당 없음B IIemission1s2.2s.3d 3D → 1s2.2s.4f 3F*측정값NIST
412.1928 nm해당 없음B IIemission1s2.2s.3d 3D → 1s2.2s.4f 3F*측정값NIST
412.1928 nm해당 없음B IIemission1s2.2s.3d 3D → 1s2.2s.4f 3F*측정값NIST
412.1928 nm해당 없음B IIemission1s2.2s.3d 3D → 1s2.2s.4f 3F*측정값NIST
412.1928 nm해당 없음B IIemission1s2.2s.3d 3D → 1s2.2s.4f 3F*측정값NIST
414.697 nm해당 없음B IIIemission1s2.5d 2D → 1s2.8f 2F*측정값NIST
414.708 nm해당 없음B IIIemission1s2.5d 2D → 1s2.8f 2F*측정값NIST
414.708 nm해당 없음B IIIemission1s2.5d 2D → 1s2.8f 2F*측정값NIST
415.284 nm해당 없음B IIemission1s2.2s.4p 3P* → 1s2.2p.3p 3P측정값NIST
415.284 nm해당 없음B IIemission1s2.2s.4p 3P* → 1s2.2p.3p 3P측정값NIST
415.471 nm해당 없음B IIemission1s2.2s.4p 3P* → 1s2.2p.3p 3P측정값NIST
415.471 nm해당 없음B IIemission1s2.2s.4p 3P* → 1s2.2p.3p 3P측정값NIST
415.471 nm해당 없음B IIemission1s2.2s.4p 3P* → 1s2.2p.3p 3P측정값NIST
415.584 nm해당 없음B IIemission1s2.2s.4p 3P* → 1s2.2p.3p 3P측정값NIST
417.896 nm해당 없음B Iemission2s2.3p 2P* → 2s.2p2 2P측정값NIST
417.927 nm해당 없음B Iemission2s2.3p 2P* → 2s.2p2 2P측정값NIST
418.099 nm해당 없음B Iemission2s2.3p 2P* → 2s.2p2 2P측정값NIST
418.13 nm해당 없음B Iemission2s2.3p 2P* → 2s.2p2 2P측정값NIST
419.4792 nm180B IIemission1s2.2s.3p 1P* → 1s2.2s.4s 1S측정값NIST
419.773 nm30B IVemission1s.5s 3S → 1s.6p 3P*측정값NIST
424.3 nm300B IIIemission1s2.4p 2P* → 1s2.5d 2D측정값NIST
424.359 nm해당 없음B IIIemission1s2.4p 2P* → 1s2.5d 2D측정값NIST
424.37 nm해당 없음B IIIemission1s2.4p 2P* → 1s2.5d 2D측정값NIST
427.274 nm50B IIemission1s2.2s.4s 3S → 1s2.2s.6p 3P*측정값NIST
429.571 nm50B IIemission1s2.2s.4p 1P* → 1s2.2s.7d 1D측정값NIST
436.147 nm60B IIIemission1s.2p.(3P*).4f 2F → 1s.2p.(3P*).5g 2G*측정값NIST
436.61 nm100B IIIemission1s.2p.(3P*).4f 4F → 1s.2p.(3P*).5g 4G*측정값NIST
443.11 nm해당 없음B IIemission1s2.2p.3d 3D* → 1s2.2p.4f 3F측정값NIST
443.185 nm해당 없음B IIemission1s2.2p.3d 3D* → 1s2.2p.4f 3F측정값NIST
443.291 nm해당 없음B IIemission1s2.2p.3d 3D* → 1s2.2p.4f 3F측정값NIST
445.943 nm해당 없음B IVemission1s.5p 3P* → 1s.6d 3D측정값NIST
445.943 nm해당 없음B IVemission1s.5p 3P* → 1s.6d 3D측정값NIST
445.943 nm해당 없음B IVemission1s.5p 3P* → 1s.6d 3D측정값NIST
447.112 nm해당 없음B IIIemission1s2.5s 2S → 1s2.7p 2P*측정값NIST
447.112 nm해당 없음B IIIemission1s2.5s 2S → 1s2.7p 2P*측정값NIST
447.2029 nm해당 없음B IIemission1s2.2s.3p 3P* → 1s2.2s.4s 3S측정값NIST
447.2151 nm해당 없음B IIemission1s2.2s.3p 3P* → 1s2.2s.4s 3S측정값NIST
447.2862 nm470B IIemission1s2.2s.3p 3P* → 1s2.2s.4s 3S측정값NIST
448.692 nm해당 없음B IIIemission1s2.4d 2D → 1s2.5f 2F*측정값NIST
448.71 nm해당 없음B IIIemission1s2.4d 2D → 1s2.5f 2F*측정값NIST
449.09 nm20B IVemission1s.2s 1S → 1s.2p 1P*측정값NIST
449.773 nm1700B IIIemission1s2.4f 2F* → 1s2.5g 2G측정값NIST
449.853 nm해당 없음B IIIemission1s2.4f 2F* → 1s2.5f 2F*측정값NIST
449.859 nm해당 없음B IIIemission1s2.4f 2F* → 1s2.5f 2F*측정값NIST
450.481 nm해당 없음B IIIemission1s2.4f 2F* → 1s2.5d 2D측정값NIST
450.482 nm해당 없음B IIIemission1s2.4f 2F* → 1s2.5d 2D측정값NIST
451.9912773 nm해당 없음B Vemission7i 2I → 9k 2K*측정값NIST
451.9946377 nm해당 없음B Vemission7i 2I → 9k 2K*측정값NIST
453.229 nm해당 없음B IIemission1s2.2s.4f 1F* → 1s2.2p.3p 1D측정값NIST
459.72 nm해당 없음B IIIemission1s.2s.(3S).4d 4D → 1s.2s.(3S).5p 4P*측정값NIST
459.73 nm해당 없음B IIIemission1s.2p.(3P*).4p 4P → 1s.2p.(3P*).5s 4P*측정값NIST
461.114 nm해당 없음B IIemission1s2.2s.4p 3P* → 1s2.2p.3p 3S측정값NIST
461.114 nm해당 없음B IIemission1s2.2s.4p 3P* → 1s2.2p.3p 3S측정값NIST
461.114 nm해당 없음B IIemission1s2.2s.4p 3P* → 1s2.2p.3p 3S측정값NIST
461.32 nm해당 없음B IVemission1s.5d 3D → 1s.6p 1P*측정값NIST
463.217 nm해당 없음B IIIemission1s2.4d 2D → 1s2.5p 2P*측정값NIST
463.243 nm해당 없음B IIIemission1s2.4d 2D → 1s2.5p 2P*측정값NIST
463.263 nm해당 없음B IIIemission1s2.4d 2D → 1s2.5p 2P*측정값NIST
464.69 nm해당 없음B IVemission1s.5d 3D → 1s.6f 1F*측정값NIST
464.69 nm해당 없음B IVemission1s.5d 3D → 1s.6f 1F*측정값NIST
464.701 nm해당 없음B IVemission1s.5d 3D → 1s.6f 3F*측정값NIST
464.701 nm해당 없음B IVemission1s.5d 3D → 1s.6f 3F*측정값NIST
464.701 nm해당 없음B IVemission1s.5d 3D → 1s.6f 3F*측정값NIST
464.701 nm해당 없음B IVemission1s.5d 3D → 1s.6f 3F*측정값NIST
464.701 nm해당 없음B IVemission1s.5d 3D → 1s.6f 3F*측정값NIST
464.701 nm해당 없음B IVemission1s.5d 3D → 1s.6f 3F*측정값NIST
465.58 nm해당 없음B IVemission1s.5d 1D → 1s.6f 1F*측정값NIST
465.786 nm해당 없음B IVemission1s.5f 3F* → 1s.6g 3G측정값NIST
465.786 nm해당 없음B IVemission1s.5f 3F* → 1s.6g 3G측정값NIST
465.786 nm해당 없음B IVemission1s.5f 3F* → 1s.6g 3G측정값NIST
465.8 nm해당 없음B IVemission1s.5f 1F* → 1s.6g 3G측정값NIST
465.815 nm해당 없음B IVemission1s.5g 3G → 1s.6h 3H*측정값NIST
465.815 nm해당 없음B IVemission1s.5g 3G → 1s.6h 3H*측정값NIST
465.815 nm해당 없음B IVemission1s.5g 3G → 1s.6h 3H*측정값NIST
465.815 nm해당 없음B IVemission1s.5g 1G → 1s.6h 3H*측정값NIST
465.92 nm해당 없음B IVemission1s.5g 1G → 1s.6f 1F*측정값NIST
465.92 nm해당 없음B IVemission1s.5g 3G → 1s.6f 1F*측정값NIST
465.92 nm해당 없음B IVemission1s.5g 3G → 1s.6f 1F*측정값NIST
465.927 nm해당 없음B IVemission1s.5g 3G → 1s.6f 3F*측정값NIST
465.927 nm해당 없음B IVemission1s.5g 3G → 1s.6f 3F*측정값NIST
465.927 nm해당 없음B IVemission1s.5g 3G → 1s.6f 3F*측정값NIST
465.927 nm해당 없음B IVemission1s.5g 1G → 1s.6f 3F*측정값NIST
468.31 nm해당 없음B IVemission1s.5p 1P* → 1s.6p 1P*측정값NIST
468.481 nm해당 없음B IVemission1s.6g 3G → 1s.8h 3H*측정값NIST
468.489 nm해당 없음B IVemission1s.6f 3F* → 1s.8g 3G측정값NIST
468.489 nm해당 없음B IVemission1s.6f 3F* → 1s.8g 3G측정값NIST
468.489 nm해당 없음B IVemission1s.6f 3F* → 1s.8g 3G측정값NIST
468.5 nm해당 없음B IVemission1s.6h 3H* → 1s.8i 3I측정값NIST
471.612 nm15B IIemission1s2.2p.3d 1D* → 1s2.2p.4p 1P측정값NIST
471.99 nm해당 없음B IVemission1s.5p 1P* → 1s.6d 1D측정값NIST
477.384 nm해당 없음B IVemission1s.5d 3D → 1s.6p 3P*측정값NIST
477.384 nm해당 없음B IVemission1s.5d 3D → 1s.6p 3P*측정값NIST
477.384 nm해당 없음B IVemission1s.5d 3D → 1s.6p 3P*측정값NIST
478.42 nm해당 없음B IIemission1s2.2s.3d 3D → 1s2.2s.4p 3P*측정값NIST
478.42 nm해당 없음B IIemission1s2.2s.3d 3D → 1s2.2s.4p 3P*측정값NIST
478.4203 nm해당 없음B IIemission1s2.2s.3d 3D → 1s2.2s.4p 3P*측정값NIST
478.4203 nm해당 없음B IIemission1s2.2s.3d 3D → 1s2.2s.4p 3P*측정값NIST
478.4203 nm해당 없음B IIemission1s2.2s.3d 3D → 1s2.2s.4p 3P*측정값NIST
478.4203 nm해당 없음B IIemission1s2.2s.3d 3D → 1s2.2s.4p 3P*측정값NIST
481.276 nm해당 없음B IVemission1s.5p 3P* → 1s.6s 3S측정값NIST
481.276 nm해당 없음B IVemission1s.5p 3P* → 1s.6s 3S측정값NIST
481.276 nm해당 없음B IVemission1s.5p 3P* → 1s.6s 3S측정값NIST
491.746 nm500B IIIemission1s2.4p 2P* → 1s2.5s 2S측정값NIST
491.84 nm500B IIIemission1s2.4p 2P* → 1s2.5s 2S측정값NIST
494.0365 nm440B IIemission1s2.2s.3d 1D → 1s2.2s.4f 1F*측정값NIST
494.4788284 nm해당 없음B Vemission6h 2H* → 7i 2I측정값NIST
494.4864305 nm해당 없음B Vemission6h 2H* → 7i 2I측정값NIST
498.848 nm해당 없음B IIIemission1s2.5p 2P* → 1s2.7d 2D측정값NIST
498.901 nm해당 없음B IIIemission1s2.5p 2P* → 1s2.7d 2D측정값NIST
512.579 nm해당 없음B IIemission1s2.2s.4d 3D → 1s2.2s.7f 3F*측정값NIST
512.579 nm해당 없음B IIemission1s2.2s.4d 3D → 1s2.2s.7f 3F*측정값NIST
512.579 nm해당 없음B IIemission1s2.2s.4d 3D → 1s2.2s.7f 3F*측정값NIST
515.776 nm해당 없음B IIIemission1s2.5d 2D → 1s2.7f 2F*측정값NIST
515.793 nm해당 없음B IIIemission1s2.5d 2D → 1s2.7f 2F*측정값NIST
516.57 nm해당 없음B IIIemission1s2.5f 2F* → 1s2.7g 2G측정값NIST
516.579 nm해당 없음B IIIemission1s2.5f 2F* → 1s2.7g 2G측정값NIST
522.65 nm해당 없음B IIIemission1s2.5d 2D → 1s2.7p 2P*측정값NIST
522.65 nm해당 없음B IIIemission1s2.5d 2D → 1s2.7p 2P*측정값NIST
522.667 nm해당 없음B IIIemission1s2.5d 2D → 1s2.7p 2P*측정값NIST
526.311 nm해당 없음B IIemission1s2.2s.4f 3F* → 1s2.2s.7g 3G측정값NIST
526.311 nm해당 없음B IIemission1s2.2s.4f 3F* → 1s2.2s.7g 3G측정값NIST
526.311 nm해당 없음B IIemission1s2.2s.4f 3F* → 1s2.2s.7g 3G측정값NIST
529.28 nm해당 없음B IIIemission1s2.5p 2P* → 1s2.7s 2S측정값NIST
529.34 nm해당 없음B IIIemission1s2.5p 2P* → 1s2.7s 2S측정값NIST
534.765 nm15B IIemission1s2.2s.4s 1S → 1s2.2p.3s 1P*측정값NIST
539.322 nm30B IIemission1s2.2s.4p 1P* → 1s2.2p.3p 1P측정값NIST
550.4527 nm해당 없음B Iemission2s.2p2 2D → 2s2.11f 2F*측정값NIST
550.4622 nm해당 없음B Iemission2s.2p2 2D → 2s2.11f 2F*측정값NIST
556.3146 nm해당 없음B Iemission2s.2p2 2D → 2s2.10f 2F*측정값NIST
556.3244 nm해당 없음B Iemission2s.2p2 2D → 2s2.10f 2F*측정값NIST
563.30717 nm해당 없음B Iemission2s2.3s 2S → 2s2.4p 2P*측정값NIST
563.32732 nm해당 없음B Iemission2s2.3s 2S → 2s2.4p 2P*측정값NIST
564.4278 nm해당 없음B Iemission2s.2p2 2D → 2s2.9f 2F*측정값NIST
564.4379 nm해당 없음B Iemission2s.2p2 2D → 2s2.9f 2F*측정값NIST
576.1901 nm해당 없음B Iemission2s.2p2 2D → 2s2.8f 2F*측정값NIST
576.1901 nm해당 없음B Iemission2s.2p2 2D → 2s2.8f 2F*측정값NIST
576.2006 nm해당 없음B Iemission2s.2p2 2D → 2s2.8f 2F*측정값NIST
578.747 nm해당 없음B IIemission1s2.2s.4s 3S → 1s2.2s.5p 3P*측정값NIST
578.747 nm해당 없음B IIemission1s2.2s.4s 3S → 1s2.2s.5p 3P*측정값NIST
578.747 nm해당 없음B IIemission1s2.2s.4s 3S → 1s2.2s.5p 3P*측정값NIST
581.833 nm60B Iemission2s.2p2 2P → 2s.2p.(3P*).3d 2D*측정값NIST
582.116 nm100B Iemission2s.2p2 2P → 2s.2p.(3P*).3d 2D*측정값NIST
582.228 nm10B Iemission2s.2p2 2P → 2s.2p.(3P*).3d 2D*측정값NIST
594.2619 nm해당 없음B Iemission2s.2p2 2D → 2s2.7f 2F*측정값NIST
594.2619 nm해당 없음B Iemission2s.2p2 2D → 2s2.7f 2F*측정값NIST
594.2731 nm해당 없음B Iemission2s.2p2 2D → 2s2.7f 2F*측정값NIST
601.35 nm해당 없음B IIemission1s2.2s.4p 3P* → 1s2.2s.6s 3S측정값NIST
601.35 nm해당 없음B IIemission1s2.2s.4p 3P* → 1s2.2s.6s 3S측정값NIST
601.35 nm해당 없음B IIemission1s2.2s.4p 3P* → 1s2.2s.6s 3S측정값NIST
602.772 nm해당 없음B Iemission2s2.3p 2P* → 2s2.8d 2D측정값NIST
602.837 nm해당 없음B Iemission2s2.3p 2P* → 2s2.8d 2D측정값NIST
602.837 nm해당 없음B Iemission2s2.3p 2P* → 2s2.8d 2D측정값NIST
608.039 nm85B IIemission1s2.2p2 1S → 1s2.2s.3p 1P*측정값NIST
612.224 nm해당 없음B IIemission1s2.2p2 1S → 1s2.2s.3p 3P*측정값NIST
612.508 nm93B IIIemission1s.2s.(3S).3s 4S → 1s.2s.(3S).3p 4P*측정값NIST
612.752 nm해당 없음B IIIemission1s.2s.(3S).3s 4S → 1s.2s.(3S).3p 4P*측정값NIST
612.797 nm해당 없음B IIIemission1s.2s.(3S).3s 4S → 1s.2s.(3S).3p 4P*측정값NIST
614.891 nm해당 없음B IIemission1s2.2s.4d 3D → 1s2.2s.6f 3F*측정값NIST
614.891 nm해당 없음B IIemission1s2.2s.4d 3D → 1s2.2s.6f 3F*측정값NIST
614.891 nm해당 없음B IIemission1s2.2s.4d 3D → 1s2.2s.6f 3F*측정값NIST
614.891 nm해당 없음B IIemission1s2.2s.4d 3D → 1s2.2s.6f 3F*측정값NIST
614.891 nm해당 없음B IIemission1s2.2s.4d 3D → 1s2.2s.6f 3F*측정값NIST
614.891 nm해당 없음B IIemission1s2.2s.4d 3D → 1s2.2s.6f 3F*측정값NIST
617.867 nm해당 없음B Iemission2s2.3p 2P* → 2s2.8s 2S측정값NIST
617.936 nm해당 없음B Iemission2s2.3p 2P* → 2s2.8s 2S측정값NIST
618.638 nm해당 없음B IIemission1s2.2s.4f 3F* → 1s2.2p.3p 3D측정값NIST
618.638 nm해당 없음B IIemission1s2.2s.4f 3F* → 1s2.2p.3p 3D측정값NIST
618.638 nm해당 없음B IIemission1s2.2s.4f 3F* → 1s2.2p.3p 3D측정값NIST
619.359 nm해당 없음B IIemission1s2.2s.4f 3F* → 1s2.2p.3p 3D측정값NIST
619.359 nm해당 없음B IIemission1s2.2s.4f 3F* → 1s2.2p.3p 3D측정값NIST
619.735 nm해당 없음B IIemission1s2.2s.4f 3F* → 1s2.2p.3p 3D측정값NIST
622.745 nm해당 없음B Iemission2s2.3p 2P* → 2s2.7d 2D측정값NIST
622.815 nm해당 없음B Iemission2s2.3p 2P* → 2s2.7d 2D측정값NIST
622.815 nm해당 없음B Iemission2s2.3p 2P* → 2s2.7d 2D측정값NIST
624.4557 nm해당 없음B Iemission2s.2p2 2D → 2s2.6f 2F*측정값NIST
624.4557 nm해당 없음B Iemission2s.2p2 2D → 2s2.6f 2F*측정값NIST
624.4681 nm해당 없음B Iemission2s.2p2 2D → 2s2.6f 2F*측정값NIST
628.551 nm30B IIemission1s2.2s.3d 1D → 1s2.2s.4p 1P*측정값NIST
634.927 nm해당 없음B IIemission1s2.2s.4f 3F* → 1s2.2s.6g 3G측정값NIST
634.927 nm해당 없음B IIemission1s2.2s.4f 3F* → 1s2.2s.6g 3G측정값NIST
634.927 nm해당 없음B IIemission1s2.2s.4f 3F* → 1s2.2s.6g 3G측정값NIST
635.676 nm1B IIemission1s2.2s.4f 1F* → 1s2.2s.6g 1G측정값NIST
643.151 nm해당 없음B Iemission2s2.3p 2P* → 2s2.7s 2S측정값NIST
643.225 nm해당 없음B Iemission2s2.3p 2P* → 2s2.7s 2S측정값NIST
652.056 nm해당 없음B IIemission1s2.2s.4s 3S → 1s2.2p.3s 3P*측정값NIST
652.959 nm해당 없음B IIemission1s2.2s.4s 3S → 1s2.2p.3s 3P*측정값NIST
653.371 nm해당 없음B IIemission1s2.2s.4s 3S → 1s2.2p.3s 3P*측정값NIST
656.269 nm해당 없음B Iemission2s2.3p 2P* → 2s2.6d 2D측정값NIST
656.345 nm해당 없음B Iemission2s2.3p 2P* → 2s2.6d 2D측정값NIST
656.345 nm해당 없음B Iemission2s2.3p 2P* → 2s2.6d 2D측정값NIST
657.112 nm0.5B IIemission1s2.2s.5p 1P* → 1s2.2p.3p 1D측정값NIST
671.765 nm0.5B IIemission1s2.2s.4d 1D → 1s2.2s.6f 1F*측정값NIST
677.866 nm해당 없음B Iemission2s2.4p 2P* → 2s.2p2 2P측정값NIST
677.895 nm해당 없음B Iemission2s2.4p 2P* → 2s.2p2 2P측정값NIST
678.401 nm해당 없음B Iemission2s2.4p 2P* → 2s.2p2 2P측정값NIST
678.431 nm해당 없음B Iemission2s2.4p 2P* → 2s.2p2 2P측정값NIST
678.614 nm0.5B IIemission1s2.2s.4p 1P* → 1s2.2s.5d 1D측정값NIST
681.95167 nm해당 없음B Iemission2s.2p2 2D → 2s2.5f 2F*측정값NIST
681.95167 nm해당 없음B Iemission2s.2p2 2D → 2s2.5f 2F*측정값NIST
681.96637 nm해당 없음B Iemission2s.2p2 2D → 2s2.5f 2F*측정값NIST
697.688 nm해당 없음B IIemission1s2.2s.3s 3S → 1s2.2s.3p 1P*측정값NIST
703.027 nm4B IIemission1s2.2s.3s 3S → 1s2.2s.3p 3P*측정값NIST
703.203 nm3B IIemission1s2.2s.3s 3S → 1s2.2s.3p 3P*측정값NIST
703.233 nm2B IIemission1s2.2s.3s 3S → 1s2.2s.3p 3P*측정값NIST
715.955 nm해당 없음B IIemission1s2.2p.3s 3P* → 1s2.2p.3p 3P측정값NIST
716.016 nm해당 없음B IIemission1s2.2p.3s 3P* → 1s2.2p.3p 3P측정값NIST
716.511 nm해당 없음B IIemission1s2.2p.3s 3P* → 1s2.2p.3p 3P측정값NIST
716.846 nm해당 없음B IIemission1s2.2p.3s 3P* → 1s2.2p.3p 3P측정값NIST
717.045 nm해당 없음B IIemission1s2.2p.3s 3P* → 1s2.2p.3p 3P측정값NIST
717.602 nm해당 없음B IIemission1s2.2p.3s 3P* → 1s2.2p.3p 3P측정값NIST
720.593 nm해당 없음B Iemission2s2.3p 2P* → 2s2.5d 2D측정값NIST
720.685 nm해당 없음B Iemission2s2.3p 2P* → 2s2.5d 2D측정값NIST
720.685 nm해당 없음B Iemission2s2.3p 2P* → 2s2.5d 2D측정값NIST
720.766 nm해당 없음B Iemission2s2.3p 2P* → 2s2.6s 2S측정값NIST
720.859 nm해당 없음B Iemission2s2.3p 2P* → 2s2.6s 2S측정값NIST
722.85 nm해당 없음B IIemission1s2.2s.4s 1S → 1s2.2s.5p 1P*측정값NIST

확장 특성

공유 결합 반지름(확장)

공유 결합 반지름(Pyykkö)
85 pm
공유 결합 반지름(Pyykkö, 이중 결합)
78 pm
공유 결합 반지름(Pyykkö, 삼중 결합)
73 pm

반데르발스 반지름

Truhlar
192 pm
Batsanov
180 pm
Alvarez
191 pm
UFF
408.3 pm
MM3
215 pm
Dreiding
402 pm

원자 및 금속 반지름

원자 반지름(Rahm)
205 pm
금속 반지름(C12)
98 pm

번호 척도

Mendeleev
81
Pettifor
86
Glawe
86

전기 음성도 척도

Ghosh
0
Miedema
5
Gunnarsson–Lundqvist
4
Robles–Bartolotti
4

분극률 및 분산

쌍극자 분극률
20.5 a.u.
쌍극자 분극률(불확도)
0.1 a.u.
C₆
99.5 Ha·Bohr6
C₆ (Gould–Bučko)
99.2 Ha·Bohr6

미데마 매개변수

미데마 몰 부피
4.7 cm3/mol
미데마 전자 밀도
5

공급 위험 및 경제성

생산 집중도
34
상대적 공급 위험
5
정치적 안정성(최대 생산국)
12
정치적 안정성(최대 매장국)
12

상전이 및 동소체

녹는점2350.15 K
끓는점4273.15 K

산화 상태 분류

−5 extended
+2 extended
+3 main
0 extended
−1 extended
+1 extended

심화 참고 데이터

차폐 상수 (3)
n오비탈σ
1s0.3205
2p2.5786
2s2.4238
결정 반지름 상세 정보 (3)
전하CN스핀rcrystal (pm)기원
3III15
3IV25
3VI41calculated,
동위원소 붕괴 방식 (30)
동위원소모드세기
62p—
7p100%
8B+100%
8B+A100%
9p100%
12B-100%
12B-A0.6%
13B-100%
13B-n0.3%
14B-100%
X선 산란 인자 (502)
에너지 (eV)f₁f₂
10—1.48933
10.1617—1.48084
10.3261—1.4724
10.4931—1.46401
10.6628—1.45567
10.8353—1.44738
11.0106—1.43913
11.1886—1.43093
11.3696—1.42278
11.5535—1.41467

추가 데이터

Sources

Sources of this element.

The element is not found free in nature, but occurs as orthoboric acid usually found in certain volcanic spring waters and as borates in boron and colemantie.

Important sources of boron are ore rasorite (kernite) and tincal (borax ore). Both of these ores are found in the Mojave Desert. Tincal is the most important source of boron from the Mojave. Extensive borax deposits are also found in Turkey.

Boron exists naturally as 19.78% 10B isotope and 80.22% 11B isotope. High-purity crystalline boron may be prepared by the vapor phase reduction of boron trichloride or tribromide with hydrogen on electrically heated filaments. The impure or amorphous, boron, a brownish-black powder, can be obtained by heating the trioxide with magnesium powder.

Boron of 99.9999% purity has been produced and is available commercially. Elemental boron has an energy band gap of 1.50 to 1.56 eV, which is higher than that of either silicon or germanium.

참고 문헌 (1)

참고 문헌

(9)
2 Atomic Mass Data Center (AMDC), International Atomic Energy Agency (IAEA)
B

The half-life and atomic mass data was provided by the Atomic Mass Data Center at the International Atomic Energy Agency.

3 IUPAC Commission on Isotopic Abundances and Atomic Weights (CIAAW)
Boron

Element data are cited from the Atomic weights of the elements (an IUPAC Technical Report). The IUPAC periodic table of elements can be found at https://iupac.org/what-we-do/periodic-table-of-elements/. Additional information can be found within IUPAC publication doi:10.1515/pac-2015-0703 Copyright © 2020 International Union of Pure and Applied Chemistry.

4 IUPAC Periodic Table of the Elements and Isotopes (IPTEI)

The information are cited from Pure Appl. Chem. 2018; 90(12): 1833-2092, https://doi.org/10.1515/pac-2015-0703.

라이선스 안내: Copyright (c) 2020 International Union of Pure and Applied Chemistry. The International Union of Pure and Applied Chemistry (IUPAC) contribution within Pubchem is provided under a CC-BY-NC-ND 4.0 license, unless otherwise stated.
5 Jefferson Lab, U.S. Department of Energy
Boron

Thomas Jefferson National Accelerator Facility (Jefferson Lab) is one of 17 national laboratories funded by the U.S. Department of Energy. The lab's primary mission is to conduct basic research of the atom's nucleus using the lab's unique particle accelerator, known as the Continuous Electron Beam Accelerator Facility (CEBAF). For more information visit https://www.jlab.org/

라이선스 안내: Please see citation and linking information: https://education.jlab.org/faq/index.html
6 Los Alamos National Laboratory, U.S. Department of Energy
Boron

The periodic table at the LANL (Los Alamos National Laboratory) contains basic element information together with the history, source, properties, use, handling and more. The provenance data may be found from the link under the source name.

7 NIST Physical Measurement Laboratory
Boron

The periodic table contains NIST's critically-evaluated data on atomic properties of the elements. The provenance data that include data for atomic spectroscopy, X-ray and gamma ray, radiation dosimetry, nuclear physics, and condensed matter physics may be found from the link under the source name. Ref: https://www.nist.gov/pml/atomic-spectra-database

8 PubChem Elements
Boron

This section provides all form of data related to element Boron.

9 PubChem Elements
Boron

The element property data was retrieved from publications.

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