Indium (In)
post-transition-metalSolid
標準原子量
114.818 u電子配置
[Kr] 5s2 4d10 5p1融点
156.6 °C沸点
2071.85 °C密度
7310 kg/m³酸化数
−5, −2, −1, 0, +1, +2, +3電気陰性度（Pauling）
1.78第1イオン化エネルギー
5.786356 eV発見年
1863原子半径
155 pm詳細
Indium is a soft, silvery post-transition metal in group 13. It is chemically related to gallium and thallium, but its stable chemistry is dominated by the +3 oxidation state, with +1 compounds also known. The element is rare in Earth's crust and is obtained chiefly as a by-product of zinc refining. Its technological importance is disproportionate to its abundance, especially because transparent conducting indium tin oxide is central to flat-panel displays, touch screens, and other optoelectronic devices.
Indium is available in ultra pure form. Indium is a very soft, silvery-white metal with a brilliant luster. The pure metal gives a high-pitched "cry" when bent. It wets glass, as does gallium.
The name derives from the term "indigo" for the indigo-blue line in the element's spark spectrum. It was discovered in 1863 by the German physicist Ferdinand Reich and the German metallurgist Hieronymus Theodor Richter, while examining zinc blende. They isolated indium in 1867.
Indium was discovered by the German chemists Ferdinand Reich and Hieronymus Theodor Richter in 1863. Reich and Richter had been looking for traces of the element thallium in samples of zinc ores. A brilliant indigo line in the sample's spectrum revealed the existence of indium. Indium is about as abundant as silver but is much easier to recover since it typically occurs along with zinc, iron, lead and copper ores.
From the brilliant indigo line in its spectrum. Discovered by Reich and Richter, who later isolated the metal. Until 1924, a gram or so constituted the world's supply of this element in isolated form. It is probably about as abundant as silver. About 4 million troy ounces of indium are now produced annually in the Free World. Canada is presently producing more than 1,000,000 troy ounces annually.
Pure indium is a very soft, lustrous, silvery-white metal at ordinary conditions. It can be cut with a knife, leaves a mark on paper, and emits a characteristic high-pitched “cry” when bent as its crystals deform. It melts at a relatively low temperature for a metal, about 157 °C.
The largest use of indium is in indium tin oxide, a transparent and electrically conducting oxide coating used on displays, touch panels, solar cells, and low-emissivity glass. Indium metal and indium-rich alloys are used in low-melting solders, fusible alloys, thermal interface materials, and seals that wet glass or ceramics. Indium is also used in compound semiconductors such as indium phosphide and indium gallium arsenide for high-speed electronics, lasers, photodetectors, and some photovoltaic cells.
Indium is used to coat the bearings of high speed motors since it allows for the even distribution of lubricating oil. Indium is used to dope germanium to make transistors. It is also used to make other electrical components such as rectifiers, thermistors and photoconductors. Indium can be used to make mirrors that are as reflective as silver mirrors but do not tarnish as quickly. Indium is also used to make low melting alloys. An alloy of 24% indium and 76% gallium is a liquid at room temperature.
It has found application in making low-melting allows; an allow of 24% indium - 76% gallium is liquid at room temperature. It is used in making bearing alloys, germanium transistors, rectifiers, thermistors, and photoconductors. It can be plated onto metal and evaporated onto glass, forming a mirror as good as that made with silver but with more resistance to atmospheric corrosion.
Isotopes in Medicine
111In (with a half-life of 2.8 days) is used in indium leukocyte imaging (Fig. IUPAC.49.1), in which white blood cells that are abundant at sites of infection are labeled with 111In to help locate the source of the infection [361] M. T. Syrjälä, V. Valtonen, K. Liewendahl, G. Myllylä. J. Nucl. Med.28, 155 (1987)., [362] M. D. Cerqueira, A. F. Jacobson. J. Nucl. Med.30, 703 (1989)., [363] C. Love, C. J. Palestro. J. Nucl. Med.Technol.32, 47 (2004)..
Isotopes Used as a Source of Radioactive Isotope(s)
113In is used to produce 113Sn (with a half-life of 115 days) via the reaction 113In (p, n) 113Sn, and 113In is used to produce the radioisotope 110In (with a half-life of 1.15 h) [364] F. E. Fakhari. Separation and Purification of 111In from Irradiated Cadmium Targets by Solid Phase Extraction (SPE) Method for Medical Applications, Deutsche National Bibliothek (2014), Feb. 26; http://archiv.ub.uni-marburg.de/diss/z2006/0132/view.html., [365] M. Mostafa, A. A. El Sadek, H. El Said, M. A. El Amir. J. Nucl. Radiochem. Sci.10, 1 (2009)..
Indium most often forms In³⁺ compounds, although In⁺ chemistry is significant and can be stabilized in some solids and salts. Indium(III) oxide, In₂O₃, is a wide-band-gap oxide and the main component of indium tin oxide. Indium(III) chloride, InCl₃, is a common Lewis-acidic reagent and precursor. Indium phosphide, InP, and indium arsenide, InAs, are important III-V semiconductors. Indium forms many alloys and intermetallic compounds, and its organometallic chemistry includes precursors used in vapor deposition.
See more information at the Indium compound page.
Bulk indium metal has low acute toxicity, but fine dusts, fumes, and soluble indium compounds require control in industrial settings. Inhalation exposure to indium tin oxide and some indium compounds has been associated with serious lung disease in workers. Many semiconductor compounds containing indium also contain toxic partners such as arsenic or phosphide-forming materials, so hazards are not due to indium alone. Natural indium has no significant radiological hazard.
There is evidence that indium has a low order of toxicity; however, care should be taken until further information is available.
Indium occurs mainly as a trace constituent in sulfide ores, especially zinc ores such as sphalerite, rather than as abundant indium minerals. During weathering and processing it tends to follow chalcophile pathways and can be retained in sulfide-rich residues or industrial wastes. Environmental concentrations are usually very low, and indium has no known biological role. Releases are most relevant near mining, smelting, refining, and electronic-material manufacturing sites.
Indium is not mined as a primary metal in most operations. It is recovered chiefly from residues and intermediate streams produced during zinc smelting and refining, with smaller contributions from other base-metal processing. Supply therefore depends strongly on ore composition, recovery technology, and the economics of host metals. Demand is led by transparent conducting oxides and specialized semiconductors, while solders and alloys account for smaller but useful markets. Recycling occurs from manufacturing scrap and some end-of-life products, but dispersed thin-film uses make complete recovery difficult. Substitution is possible in some applications, yet often involves trade-offs in conductivity, transparency, processing, or reliability.
Indium is most frequently associated with zinc materials, and it is from these that most commercial indium is now obtained; however, it is also found in iron, lead, and copper ores.
Indium is a relatively scarce element in the cosmos. Its stable isotopes are produced by neutron-capture processes in earlier generations of stars, with contributions from both slow and rapid neutron-capture nucleosynthesis. In planetary materials it is strongly chalcophile and is concentrated more readily in sulfide phases than in silicates, helping explain its association with zinc, lead, and tin ores on Earth.
- Natural indium is dominated by ¹¹⁵In, which is very weakly radioactive but has an extremely long half-life.
- Indium metal can form cold-welded seals because it remains soft and malleable at low temperatures.
- The element was named from the indigo-blue spectral line used in its discovery.
- Indium tin oxide is useful because it combines optical transparency with electrical conductivity.
- Indium wets glass better than many common metals, making it useful in special seals.
画像
性質
物理的性質
- 原子半径（経験値）
- 155 pm 全元素の原子半径（経験値）を比較 →
- 共有結合半径
- 142 pm 全元素の共有結合半径を比較 →
- ファンデルワールス半径
- 193 pm 全元素のファンデルワールス半径を比較 →
- 金属半径
- 142 pm 全元素の金属半径を比較 →
- 密度
- 7310 kg/m³ 全元素の密度を比較 →
- モル体積
- 0.0157 L/mol
- 標準温度・圧力（STP）での相
- 固体 全元素の標準温度・圧力（STP）での相を比較 →
- 融点
- 156.6 °C 全元素の融点を比較 →
- 沸点
- 2071.85 °C 全元素の沸点を比較 →
- 熱伝導率
- 81.8 W/(m·K) 全元素の熱伝導率を比較 →
- 比熱容量
- 0.233 J/(g·K) 全元素の比熱容量を比較 →
- モル熱容量
- 26.74 J/(mol·K) 全元素のモル熱容量を比較 →
- 結晶構造
- 正方晶系 全元素の結晶構造を比較 →
化学的性質
- 電気陰性度（Pauling）
- 1.78 全元素の電気陰性度（Pauling）を比較 →
- 電気陰性度（Allen）
- 1.656
- 電子親和力
- 0.3 eV
- 第1イオン化エネルギー
- 5.786356 eV 全元素の第1イオン化エネルギーを比較 →
- 第2イオン化エネルギー
- 18.870475 eV 全元素の第2イオン化エネルギーを比較 →
- 第3イオン化エネルギー
- 28.044247 eV 全元素の第3イオン化エネルギーを比較 →
- 第4イオン化エネルギー
- 55.450191 eV 全元素の第4イオン化エネルギーを比較 →
- 第5イオン化エネルギー
- 69.300239 eV 全元素の第5イオン化エネルギーを比較 →
- 酸化数
- −5, −2, −1, 0, +1, +2, +3 全元素の酸化数を比較 →
- 価電子
- 3 全元素の価電子を比較 →
- 電子配置
- [Kr] 5s2 4d10 5p1
熱力学的性質
- 三重点（温度）
- 156.5936 °C
- 融解熱
- 0.03378764 eV 全元素の融解熱を比較 →
- 蒸発熱
- 2.402446 eV 全元素の蒸発熱を比較 →
- 昇華熱
- 2.518526 eV
- 原子化熱
- 2.518526 eV
- 原子化エンタルピー
- 2.518526 eV
原子核
- 陽子数
- 49 全元素の陽子数を比較 →
- 中性子数
- 64 全元素の中性子数を比較 →
- 既知の同位体
- 42 全元素の既知の同位体を比較 →
- 安定同位体
- 1 全元素の安定同位体を比較 →
- 最も安定な同位体
- In-113
- 発見年
- 1863
存在度
- 存在度（地殻）
- 0.25 mg/kg 全元素の存在度（地殻）を比較 →
- 存在度（海洋）
- 0.02 mg/L 全元素の存在度（海洋）を比較 →
結晶構造
- 格子定数a
- 459 pm
電子構造
- 各電子殻の電子数
- 2, 8, 18, 18, 3 全元素の各電子殻の電子数を比較 →
識別子
- CAS登録番号
- 7440-74-6 全元素のCAS登録番号を比較 →
- 項記号
- 2P°1/2
- InChI
- InChI=1S/In
- InChI Key
- APFVFJFRJDLVQX-UHFFFAOYSA-N
電子配置 測定値
In: 4d¹⁰ 5s² 5p¹[Kr] 4d¹⁰ 5s² 5p¹1s² 2s² 2p⁶ 3s² 3p⁶ 3d¹⁰ 4s² 4p⁶ 4d¹⁰ 5s² 5p¹原子モデル
同位体によって中性子数、質量、安定性は変わりますが、中性原子の電子配置は変わりません。
模式的な原子モデルです。実際の縮尺とは異なります。
原子の指紋
発光／吸収スペクトル
同位体分布
| 質量数 | 原子質量（u） | 天然存在比 | 半減期 |
|---|---|---|---|
| 113 安定 | 112.90406184 ± 0.00000091 | 4.2900% | 安定 |
相／状態
理由: 融点（156.6 °C）より131.6 °C低い
模式図、実際の縮尺とは異なります
相転移点
相転移エネルギー
融点で1 molを融解させるのに必要なエネルギー
沸点で1 molを蒸発させるのに必要なエネルギー
昇華点で1 molを昇華させるのに必要なエネルギー
密度
標準条件下
標準条件下
詳細
原子スペクトル
全49件中10件を表示しています。 イオンの電荷の昇順で並べています。
スペクトル線データの収録状況 ?
| イオン | 電荷 | スペクトル線の総数 | 遷移確率 | 準位の表記 |
|---|---|---|---|---|
| In I | 0 | 92 | 27 | 91 |
| In II | +1 | 899 | 528 | 899 |
| In III | +2 | 55 | 0 | 0 |
| In IV | +3 | 42 | 0 | 0 |
| In V | +4 | 38 | 0 | 0 |
準位データの収録状況 ?
| イオン | 電荷 | 準位 |
|---|---|---|
| In I | 0 | 114 |
| In II | +1 | 195 |
| In III | +2 | 28 |
| In IV | +3 | 18 |
| In V | +4 | 42 |
| In VI | +5 | 2 |
| In VII | +6 | 2 |
| In VIII | +7 | 2 |
| In IX | +8 | 2 |
| In X | +9 | 2 |
結晶構造のデータはありません
結晶構造: tetragonal
イオン半径
| 電荷 | 配位 | スピン | 半径 |
|---|---|---|---|
| +3 | 4 | データなし | 62 pm |
| +3 | 6 | データなし | 80 pm |
| +3 | 8 | データなし | 92 pm |
化合物
同位体 (1)
| 質量数 | 原子質量（u） | 天然存在比 | 半減期 | 崩壊形式 | |
|---|---|---|---|---|---|
| 113 安定 | 112.90406184 ± 0.00000091 | 4.2900% ± 0.0500% | 安定 | stable |
スペクトル線
全277件中50件を表示しています。 初期設定では、強度の測定値があるスペクトル線のみを表示します。
| 波長（nm） | 強度 | 電離段階 | 種類 | 遷移 | 精度 | 出典 | |
|---|---|---|---|---|---|---|---|
| 383.46308 nm | 32000 | In II | emission | 5s.5d 1D → 5s.4f 1F* | 測定値 | NIST | |
| 451.12972 nm | 18000 | In I | emission | 5s2.5p 2P* → 5s2.6s 2S | 測定値 | NIST | |
| 410.17504 nm | 17000 | In I | emission | 5s2.5p 2P* → 5s2.6s 2S | 測定値 | NIST | |
| 468.1115 nm | 16000 | In II | emission | 5s.5d 3D → 5s.4f 3F* | 測定値 | NIST | |
| 590.33916 nm | 9000 | In II | emission | 5s.6p 3P* → 5s.6d 3D | 測定値 | NIST | |
| 463.8162 nm | 8800 | In II | emission | 5s.5d 3D → 5s.4f 3F* | 測定値 | NIST | |
| 465.562 nm | 7800 | In II | emission | 5s.5d 3D → 5s.4f 3F* | 測定値 | NIST | |
| 464.4572 nm | 5900 | In II | emission | 5s.5d 3D → 5s.4f 1F* | 測定値 | NIST | |
| 718.29048 nm | 5800 | In II | emission | 5s.6s 3S → 5s.6p 3P* | 測定値 | NIST | |
| 384.2918 nm | 5600 | In II | emission | 5s.5d 1D → 5s.4f 3F* | 測定値 | NIST | |
| 591.87693 nm | 5100 | In II | emission | 5s.6p 1P* → 5s.6d 1D | 測定値 | NIST | |
| 616.254 nm | 4100 | In II | emission | 5s.4f 1F* → 5s<1/2,F=4>.6g | 測定値 | NIST | |
| 689.15826 nm | 3900 | In II | emission | 5s.6s 3S → 5s.6p 3P* | 測定値 | NIST | |
| 585.31709 nm | 3400 | In II | emission | 5s.6p 3P* → 5s.6d 3D | 測定値 | NIST | |
| 609.59333 nm | 3300 | In II | emission | 5s.6p 3P* → 5s.6d 3D | 測定値 | NIST | |
| 468.4791 nm | 2500 | In II | emission | 5s.5d 3D → 5s.4f 3F* | 測定値 | NIST | |
| 727.66388 nm | 2400 | In II | emission | 5s.6s 3S → 5s.6p 3P* | 測定値 | NIST | |
| 614.953 nm | 2200 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.6g | 測定値 | NIST | |
| 613.986 nm | 2100 | In II | emission | 5s.4f 3F* → 5s<1/2,F=5>.6g | 測定値 | NIST | |
| 614.32 nm | 2100 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.6g | 測定値 | NIST | |
| 614.813 nm | 2100 | In II | emission | 5s.4f 3F* → 5s<1/2,F=5>.6g | 測定値 | NIST | |
| 616.113 nm | 2000 | In II | emission | 5s.4f 1F* → 5s<1/2,F=5>.6g | 測定値 | NIST | |
| 465.6736 nm | 1700 | In II | emission | 5s.5d 3D → 5s.4f 3F* | 測定値 | NIST | |
| 551.3006 nm | 1500 | In II | emission | 5p2 3P → 5s.4f 1F* | 測定値 | NIST | |
| 614.126 nm | 1500 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.6g | 測定値 | NIST | |
| 405.69377 nm | 1300 | In II | emission | 5s.6p 3P* → 5s.8s 3S | 測定値 | NIST | |
| 591.52626 nm | 1300 | In II | emission | 5s.6p 3P* → 5s.6d 3D | 測定値 | NIST | |
| 557.6866 nm | 1200 | In II | emission | 5s.7p 1P* → 5s.10d 1D | 測定値 | NIST | |
| 551.935 nm | 1100 | In II | emission | 5s.6d 3D → 5s.7f 3F* | 測定値 | NIST | |
| 549.7486 nm | 1000 | In II | emission | 5s.6d 3D → 5s.7f 3F* | 測定値 | NIST | |
| 550.7048 nm | 1000 | In II | emission | 5s.6d 3D → 5s.7f 3F* | 測定値 | NIST | |
| 551.0883 nm | 1000 | In II | emission | 5s.7p 3P* → 5s.10d 3D | 測定値 | NIST | |
| 512.0847 nm | 960 | In II | emission | 5s.4f 3F* → 5s<1/2,F=5>.7g | 測定値 | NIST | |
| 390.20794 nm | 910 | In II | emission | 5s.6p 1P* → 5s.7d 1D | 測定値 | NIST | |
| 384.2158 nm | 900 | In II | emission | 5s.5d 1D → 5s.4f 3F* | 測定値 | NIST | |
| 512.1781 nm | 880 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.7g | 測定値 | NIST | |
| 611.58707 nm | 830 | In II | emission | 5s.6p 3P* → 5s.6d 3D | 測定値 | NIST | |
| 511.7388 nm | 810 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.7g | 測定値 | NIST | |
| 511.5109 nm | 800 | In II | emission | 5s.4f 3F* → 5s<1/2,F=5>.7g | 測定値 | NIST | |
| 512.9865 nm | 710 | In II | emission | 5s.4f 1F* → 5s<1/2,F=5>.7g | 測定値 | NIST | |
| 463.7055 nm | 610 | In II | emission | 5s.5d 3D → 5s.4f 3F* | 測定値 | NIST | |
| 511.6041 nm | 590 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.7g | 測定値 | NIST | |
| 550.7779 nm | 570 | In II | emission | 5s.6d 3D → 5s.7f 3F* | 測定値 | NIST | |
| 414.9635 nm | 550 | In II | emission | 5s.4f 1F* → 5s<1/2,F=5>.10g | 測定値 | NIST | |
| 530.94926 nm | 550 | In II | emission | 5s.6p 3P* → 5s.6d 1D | 測定値 | NIST | |
| 454.8998 nm | 540 | In II | emission | 5p2 1D → 5s.8p 3P* | 測定値 | NIST | |
| 461.6069 nm | 540 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.8g | 測定値 | NIST | |
| 457.0881 nm | 520 | In II | emission | 5s.6d 3D → 5s.9f 3F* | 測定値 | NIST | |
| 458.701 nm | 520 | In II | emission | 5s.6d 3D → 5s.9f 3F* | 測定値 | NIST | |
| 457.1286 nm | 510 | In II | emission | 5s.6d 3D → 5s.9f 3F* | 測定値 | NIST |
詳細な性質
共有結合半径（詳細）
- 共有結合半径（Pyykkö）
- 142 pm
- 共有結合半径（Pyykkö、二重結合）
- 136 pm
- 共有結合半径（Pyykkö、三重結合）
- 146 pm
ファンデルワールス半径
- Bondi
- 193 pm
- Batsanov
- 220 pm
- Alvarez
- 243 pm
- UFF
- 446.3 pm
- MM3
- 264 pm
- Dreiding
- 459 pm
原子半径と金属半径
- 原子半径（Rahm）
- 246 pm
- 金属半径（C12）
- 158 pm
番号付けの尺度
- Mendeleev
- 84
- Pettifor
- 79
- Glawe
- 80
電気陰性度の尺度
- Ghosh
- 0
- Miedema
- 4
- Gunnarsson–Lundqvist
- 3
- Robles–Bartolotti
- 2
分極率と分散
- 双極子分極率
- 65 a.u.
- 双極子分極率（不確かさ）
- 4 a.u.
- C₆
- 779 Ha·Bohr6
- C₆ (Gould–Bučko)
- 643 Ha·Bohr6
ミーデマパラメータ
- ミーデマモル体積
- 15.75 cm3/mol
- ミーデマ電子密度
- 2
供給リスクと経済性
- 生産集中度
- 53
- 相対供給リスク
- 8
- 政治的安定性（最大生産国）
- 24
相転移と同素体
| 融点 | 429.75 K |
| 沸点 | 2300.15 K |
| 三重点（温度） | 429.74 K |
酸化数の分類
専門参考データ
遮蔽定数 (11)
| n | 軌道 | σ |
|---|---|---|
| 1 | s | 0.9903 |
| 2 | p | 4.102 |
| 2 | s | 12.8764 |
| 3 | d | 14.3218 |
| 3 | p | 17.4793 |
| 3 | s | 17.3692 |
| 4 | d | 32.0584 |
| 4 | p | 28.6312 |
| 4 | s | 27.2388 |
| 5 | p | 40.53 |
結晶半径の詳細 (3)
| 電荷 | CN | スピン | rcrystal (pm) | 由来 |
|---|---|---|---|---|
| 3 | IV | 76 | ||
| 3 | VI | 94 | from r^3 vs V plots, | |
| 3 | VIII | 106 | from r^3 vs V plots, calculated, |
同位体の崩壊形式 (69)
| 同位体 | モード | 強度 |
|---|---|---|
| 96 | B+ | — |
| 96 | p | — |
| 97 | B+ | 100% |
| 97 | B+p | 2.3% |
| 97 | p | — |
| 98 | B+ | 100% |
| 98 | B+p | 0.1% |
| 99 | B+ | 100% |
| 99 | B+p | 0.3% |
| 100 | B+ | 100% |
X線散乱因子 (510)
| エネルギー (eV) | f₁ | f₂ |
|---|---|---|
| 10 | — | 2.16244 |
| 10.1617 | — | 2.07002 |
| 10.3261 | — | 1.98155 |
| 10.4931 | — | 1.89686 |
| 10.6628 | — | 1.81579 |
| 10.8353 | — | 1.72844 |
| 11.0106 | — | 1.54985 |
| 11.1886 | — | 1.35731 |
| 11.3696 | — | 0.99325 |
| 11.5535 | — | 0.74202 |
追加データ
Estimated Crustal Abundance
The estimated element abundance in the earth's crust.
2.5×10-1 milligrams per kilogram
参考文献 (1)
Estimated Oceanic Abundance
The estimated element abundance in the earth's oceans.
2×10-2 milligrams per liter
参考文献 (1)
Sources
Sources of this element.
Indium is most frequently associated with zinc materials, and it is from these that most commercial indium is now obtained; however, it is also found in iron, lead, and copper ores.
参考文献 (1)
- [6] Indium https://periodic.lanl.gov/49.shtml
参考文献
(9)
Data deposited in or computed by PubChem
The half-life and atomic mass data was provided by the Atomic Mass Data Center at the International Atomic Energy Agency.
Element data are cited from the Atomic weights of the elements (an IUPAC Technical Report). The IUPAC periodic table of elements can be found at https://iupac.org/what-we-do/periodic-table-of-elements/. Additional information can be found within IUPAC publication doi:10.1515/pac-2015-0703 Copyright © 2020 International Union of Pure and Applied Chemistry.
The information are cited from Pure Appl. Chem. 2018; 90(12): 1833-2092, https://doi.org/10.1515/pac-2015-0703.
Thomas Jefferson National Accelerator Facility (Jefferson Lab) is one of 17 national laboratories funded by the U.S. Department of Energy. The lab's primary mission is to conduct basic research of the atom's nucleus using the lab's unique particle accelerator, known as the Continuous Electron Beam Accelerator Facility (CEBAF). For more information visit https://www.jlab.org/
The periodic table at the LANL (Los Alamos National Laboratory) contains basic element information together with the history, source, properties, use, handling and more. The provenance data may be found from the link under the source name.
The periodic table contains NIST's critically-evaluated data on atomic properties of the elements. The provenance data that include data for atomic spectroscopy, X-ray and gamma ray, radiation dosimetry, nuclear physics, and condensed matter physics may be found from the link under the source name. Ref: https://www.nist.gov/pml/atomic-spectra-database
This section provides all form of data related to element Indium.
The element property data was retrieved from publications.