Silicon (Si)
metalloidSolid
मानक परमाणु भार
28.085 u [28.084, 28.086]इलेक्ट्रॉन विन्यास
[Ne] 3s2 3p2गलनांक
1413.85 °Cक्वथनांक
3264.85 °Cघनत्व
2329.6 kg/m³ऑक्सीकरण अवस्थाएँ
−4, −3, −2, −1, 0, +1, +2, +3, +4विद्युतऋणात्मकता (पॉलिंग)
1.9आयनन ऊर्जा (प्रथम)
8.15168 eVखोज का वर्ष
1824परमाणु त्रिज्या
110 pmविवरण
Silicon is a hard, brittle metalloid in group 14. It is tetravalent in most compounds and forms strong bonds to oxygen, making silicates the dominant minerals of Earth’s crust. Elemental silicon is central to modern electronics because its oxide, silicon dioxide, can be grown as a stable insulating layer. In bulk chemistry it is less reactive than carbon at ordinary temperatures, but it dissolves or reacts under strongly alkaline, oxidizing, or high-temperature conditions.
Crystalline silicon has a metallic luster and grayish color. Silicon is a relatively inert element, but it is attacked by halogens and dilute alkali. Most acids, except hydrofluoric, do not affect it. Elemental silicon transmits more than 95% of all wavelengths of infrared, from 1.3 to 6.y micro-m.
The name derives from the Latin silex and silicis for "flint". Amorphous silicon was discovered by the Swedish chemist Jöns Jacob Berzelius in 1824. Crystalline silicon was first prepared by the French chemist Henri Sainte-Claire Deville in 1854.
Silicon was discovered by Jöns Jacob Berzelius, a Swedish chemist, in 1824 by heating chips of potassium in a silica container and then carefully washing away the residual by-products. Silicon is the seventh most abundant element in the universe and the second most abundant element in the earth's crust. Today, silicon is produced by heating sand (SiO2) with carbon to temperatures approaching 2200°C.
From the Latin. word silex, silicis, flint. In 1800, Davy thought silica to be a compound and not an element; but in 1811, Gay Lussac and Thenard probably prepared impure amorphous silicon by heating potassium with silicon tetrafluoride.
In 1824 Berzelius, generally credited with the discovery, prepared amorphous silicon by the same general method and purified the product by removing the fluosilicates by repeated washings. Deville in 1854 first prepared crystalline silicon, the second allotropic form of the element.
Pure crystalline silicon is a dark gray solid with a metallic luster and a diamond-cubic structure. It is brittle rather than malleable. Amorphous silicon is usually a brown to dark gray powder or thin film, with properties that depend strongly on preparation.
High-purity silicon is used for integrated circuits, power electronics, sensors, and photovoltaic cells. Lower-purity metallurgical silicon is used to make aluminum-silicon casting alloys, silicones, silanes, and silica-derived materials. Ferrosilicon is an important deoxidizer and alloying additive in steelmaking. Silicon carbide abrasives and refractories are often produced from silica and carbon, but their use depends on the compound rather than the free element.
Two allotropes of silicon exist at room temperature: amorphous and crystalline. Amorphous appears as a brown powder while crystalline silicon has a metallic luster and a grayish color. Single crystals of crystalline silicon can be grown with a process known as the Czochralski process. These crystals, when doped with elements such as boron, gallium, germanium, phosphorus or arsenic, are used in the manufacture of solid-state electronic devices, such as transistors, solar cells, rectifiers and microchips.
Silicon dioxide (SiO2), silicon's most common compound, is the most abundant compound in the earth's crust. It commonly takes the form of ordinary sand, but also exists as quartz, rock crystal, amethyst, agate, flint, jasper and opal. Silicon dioxide is extensively used in the manufacture of glass and bricks. Silica gel, a colloidal form of silicon dioxide, easily absorbs moisture and is used as a desiccant.
Silicon forms other useful compounds. Silicon carbide (SiC) is nearly as hard as diamond and is used as an abrasive. Sodium silicate (Na2SiO3), also known as water glass, is used in the production of soaps, adhesives and as an egg preservative. Silicon tetrachloride (SiCl4) is used to create smoke screens. Silicon is also an important ingredient in silicone, a class of material that is used for such things as lubricants, polishing agents, electrical insulators and medical implants.
Silicon is one of man's most useful elements. In the form of sand and clay it is used to make concrete and brick; it is a useful refractory material for high-temperature work, and in the form of silicates it is used in making enamels, pottery, etc. Silica, as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Glass can be made in a very great variety of shapes, and is used as containers, window glass, insulators, and thousands of other uses. Silicon tetrachloride can be used as iridize glass.
Hyperpure silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics and space-age industries.
Hydrogenated amorphous silicon has shown promise in producing economical cells for converting solar energy into electricity.
Silicon is important to plant and animal life. Diatoms in both fresh and salt water extract Silica from the water to build their cell walls. Silica is present in the ashes of plants and in the human skeleton. Silicon is an important ingredient in steel; silicon carbide is one of the most important abrasives and has been used in lasers to produce coherent light of 4560 A.
Silcones are important products of silicon. They may be prepared by hydrolyzing a silicon organic chloride, such as dimethyl silicon chloride. Hydrolysis and condensation of various substituted chlorosilanes can be used to produce a very great number of polymeric products, or silicones, ranging from liquids to hard, glasslike solids with many useful properties.
Isotopes in Earth/Planetary Science
Because molecules, atoms, and ions of the stable isotopes of silicon possess slightly different physical and chemical properties, they commonly will be fractionated during physical, chemical, and biological processes, giving rise to variations in isotopic abundances and in atomic weights. There are substantial variations in the isotopic abundances of silicon in natural terrestrial materials (Fig. IUPAC.14.1). These variations are useful in investigating the origin of substances and studying environmental, hydrological, and geological processes [13] M. W. Wieser, T. B. Coplen. Pure Appl Chem.83, 359 (2011)., [17] T. B. Coplen, J. A. Hopple, J. K. Böhlke, H. S. Peiser, S. E. Rieder, H. R. Krouse, K. J. R. Rosman, T. Ding, R. D. Vocke, K. Revesz, A. Lamberty, P. D. P. Taylor, P. D. Bièvre. United States Geological Survey Water-Resources Investigations Report, 01-4222, (2002).. Diatoms, a major group of algae, need silicon to build up their opaline shells and prefer 28Si while taking up Si(OH)4, which is the biologically available form of silicon in the marine environment. This progressively enriches surface waters with 29Si and 30Si [123] S. Kristiansen, T. Farbrot, L. J. Naustvoll. Limnol. Oceanogr.45, 472 (2000).. 32Si-labeled silicic acid of high specific radioactivity is used to measure uptake rates of Si and estimate marine sedimentation of biogenic (created by living organisms) silica (by diatoms and sea shells). By performing uptake kinetic experiments, the 32Si activity can be measured as 32P using counting of Cherenkov radiation (radiation produced by charged particles passing through a medium at a speed greater than that of light through the same medium — after Soviet physicist Pavel A. Cherenkov) with a liquid scintillation analyzer (measuring ionizing radiation using the interaction of radiation on a material and counting the resulting photon emissions).
Isotopes in Geochronology
Cosmogenic 32Si has a half-life of about 150 years and is produced by cosmic-ray spallation of argon in the stratosphere and troposphere [124] C. Schnabel, J. Beer, H. B. Clausen. Geophys. Res. Abstr.11, (2009).. 32Si in dust is precipitated in snow, making it possible to date dust in snow and glacial ice (Fig. IUPAC.14.2). Glaciers are archives for global climate history because they contain a variety of proxies (imprints of past environmental conditions used to interpret paleoclimate) for climate forcing and climate response. Cosmogenic 32Si that is stored in glaciers and ice-core samples can be analyzed using accelerator mass spectrometry to date when sections of glaciers formed [125] SAHRA – Sustainability of Semi-Arid Hydrology and Riparian Areas. Silicon, SAHRA – Sustainability of Semi-Arid Hydrology and Riparian Areas (2014), Feb. 24; http://web.sahra.arizona.edu/programs/isotopes/silicon.html., [126] GNS Science. Climate Change Studies & Ice Core Research, GNS Science (2014), Feb. 24; http://www.gns.cri.nz/Home/Services/Laboratories-Facilities/Tritium-and-Water-Dating-Laboratory/Research-Programmes/Climate-change-studies-ice-core-research..
Isotopes in Industry
At Keio University in Japan, the Itoh Research Group has developed a method that utilizes 29Si to store and process information. The Itoh Research Group focused on manipulating the nanostructure of materials at an atomic level, especially with semiconductors such as silicon. Their manipulations and observations demonstrate that differences in the nuclear spin and mass of an isotope affects the ease of further manipulation of the isotope [128] Kohei ITOH research group at Keio University, Japan. Itoh Group at Keio University, Japan, Kohei ITOH research group at Keio University, Japan (2014), Feb. 24; http://www.appi.keio.ac.jp/Itoh_group/research/., [129] T. Itahashi, H. Hayashi, M. R. Rahman, K. M. Itoh, L. S. Vlasenko, M. P. Vlasenko, D. S. Poloskin. Phys. Rev. B87, 075201-1 (2013)..
Silicon crystals enriched to higher than 99.99 percent purity of 28Si are being used in the Avogadro Project. This project is intended to remeasure the Avogadro constant (NA), which is the proportionality factor between the amount of substance and number of elementary entities [130] R. Marquardt, J. Meija, Z. Mester, M. Towns, R. Weir, R. Davis, J. Stohner. Pure Appl. Chem.90, 175 (2018)..
Silicon chemistry is dominated by the +4 oxidation state, although lower formal states occur in some silicides and specialized molecular compounds. Silicon dioxide, SiO₂, occurs as quartz and many other forms and is the basis of glass, ceramics, and semiconductor gate oxides. Silicates contain SiO₄ tetrahedra in isolated, chain, sheet, or framework arrangements. Silicon tetrachloride, SiCl₄, and trichlorosilane, HSiCl₃, are important intermediates for purified silicon and organosilicon chemistry. Silicones contain Si–O backbones with organic substituents.
See more information at the Silicon compound page.
Bulk crystalline silicon has low chemical toxicity, but fine silicon dust can irritate the eyes and respiratory tract and may pose dust-explosion risks in air. Inhalation hazards are more serious for respirable crystalline silica, SiO₂, which can cause silicosis; that risk belongs to the oxide, not elemental silicon. Silanes such as silane, SiH₄, can be pyrophoric or highly flammable. Semiconductor processing also involves corrosive and toxic reagents not inherent to silicon itself.
Miners, stonecutters, and others engaged in work where siliceous dust is breathed into large quantities often develop a serious lung disease known as silicosis.
Silicon is a major component of soils, rocks, clays, and natural waters, mostly as silicates and dissolved silicic acid, H₄SiO₄. Weathering releases soluble silicon, which rivers carry to lakes and oceans. Diatoms, radiolarians, and some plants use silica biomineralization, linking silicon to biological and sedimentary cycles. Elemental silicon is not persistent as a native environmental material under surface conditions.
Silicon is produced industrially by reducing quartz or other high-silica feedstocks with carbon in electric arc furnaces, yielding metallurgical-grade material. Semiconductor and solar uses require further purification and crystal growth or deposition, which are energy- and capital-intensive steps. Demand is split between large-volume alloy and chemical markets and smaller but very high-purity electronic markets. Recycling occurs in aluminum alloys and semiconductor manufacturing scrap, but end-of-life recovery from complex electronics is limited by dilution and contamination.
Silicon is present in the sun and stars and is a principal component of a class of meteorites known as aerolites. It is also a component of tektites, a natural glass of uncertain origin.
Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, being exceeded only by oxygen. Silicon is not found free in nature, but occurs chiefly as the oxide and as silicates. Sand, quartz, rock crystal, amethyst, agate, flint, jasper, and opal are some of the forms in which the oxide appears. Granite, hornblende, asbestos, feldspar, clay, mica, etc. are but a few of the numerous silicate minerals.
Silicon is prepared commercially by heating silica and carbon in an electric furnace, using carbon electrodes. Several other methods can be used for preparing the element. Amorphous silicon can be prepared as a brown powder, which can be easily melted or vaporized. The Czochralski process is commonly used to produce single crystals of silicon used for solid-state or semiconductor devices. Hyperpure silicon can be prepared by the thermal decomposition of ultra-pure trichlorosilane in a hydrogen atmosphere, and by a vacuum float zone process.
Silicon is among the more abundant heavy elements in the cosmos. It is formed in massive stars during advanced burning stages and is further redistributed by supernovae. In rocky planets and meteorites it is chiefly bound with oxygen and metals as silicate minerals. Spectral features of silicate dust are common in interstellar and circumstellar environments.
- The natural oxide on silicon is only a few nanometers thick but is chemically important.
- Ultra-pure silicon crystals can be grown with impurity levels far below one part per billion.
- Dopants such as boron or phosphorus control whether silicon behaves as p-type or n-type semiconductor material.
- Many common gemstones, including quartz varieties, are forms or mixtures dominated by SiO₂.
- Silicon expands on freezing, like water and a few other substances.
चित्र
गुण
भौतिक
- परमाणु त्रिज्या (आनुभविक)
- 110 pm सभी तत्वों की परमाणु त्रिज्या (आनुभविक) की तुलना करें →
- सहसंयोजक त्रिज्या
- 111 pm सभी तत्वों की सहसंयोजक त्रिज्या की तुलना करें →
- वान डर वाल्स त्रिज्या
- 210 pm सभी तत्वों की वान डर वाल्स त्रिज्या की तुलना करें →
- धात्विक त्रिज्या
- 117 pm सभी तत्वों की धात्विक त्रिज्या की तुलना करें →
- घनत्व
- 2329.6 kg/m³ सभी तत्वों की घनत्व की तुलना करें →
- मोलर आयतन
- 0.0121 L/mol
- STP पर प्रावस्था
- ठोस सभी तत्वों की STP पर प्रावस्था की तुलना करें →
- गलनांक
- 1413.85 °C सभी तत्वों की गलनांक की तुलना करें →
- क्वथनांक
- 3264.85 °C सभी तत्वों की क्वथनांक की तुलना करें →
- तापीय चालकता
- 149 W/(m·K) सभी तत्वों की तापीय चालकता की तुलना करें →
- विशिष्ट ऊष्मा धारिता
- 0.712 J/(g·K) सभी तत्वों की विशिष्ट ऊष्मा धारिता की तुलना करें →
- मोलर ऊष्मा धारिता
- 19.99 J/(mol·K) सभी तत्वों की मोलर ऊष्मा धारिता की तुलना करें →
- क्रिस्टल संरचना
- हीरा घनीय सभी तत्वों की क्रिस्टल संरचना की तुलना करें →
रासायनिक
- विद्युतऋणात्मकता (पॉलिंग)
- 1.9 सभी तत्वों की विद्युतऋणात्मकता (पॉलिंग) की तुलना करें →
- विद्युतऋणात्मकता (ऐलन)
- 1.916
- इलेक्ट्रॉन बंधुता
- 1.385 eV
- आयनन ऊर्जा (प्रथम)
- 8.15168 eV सभी तत्वों की आयनन ऊर्जा (प्रथम) की तुलना करें →
- आयनन ऊर्जा (द्वितीय)
- 16.345906 eV सभी तत्वों की आयनन ऊर्जा (द्वितीय) की तुलना करें →
- आयनन ऊर्जा (तृतीय)
- 33.493115 eV सभी तत्वों की आयनन ऊर्जा (तृतीय) की तुलना करें →
- आयनन ऊर्जा (चतुर्थ)
- 45.141945 eV सभी तत्वों की आयनन ऊर्जा (चतुर्थ) की तुलना करें →
- आयनन ऊर्जा (पंचम)
- 166.767574 eV सभी तत्वों की आयनन ऊर्जा (पंचम) की तुलना करें →
- ऑक्सीकरण अवस्थाएँ
- −4, −3, −2, −1, 0, +1, +2, +3, +4 सभी तत्वों की ऑक्सीकरण अवस्थाएँ की तुलना करें →
- संयोजकता इलेक्ट्रॉन
- 4 सभी तत्वों की संयोजकता इलेक्ट्रॉन की तुलना करें →
- इलेक्ट्रॉन विन्यास
- [Ne] 3s2 3p2
ऊष्मागतिक
- गलन ऊष्मा
- 0.52039177 eV सभी तत्वों की गलन ऊष्मा की तुलना करें →
- वाष्पन ऊष्मा
- 3.720786 eV सभी तत्वों की वाष्पन ऊष्मा की तुलना करें →
- ऊर्ध्वपातन ऊष्मा
- 4.670778 eV
- परमाणुकरण ऊष्मा
- 4.670778 eV
- परमाणुकरण एन्थैल्पी
- 4.663937 eV
नाभिकीय
- प्रोटॉन
- 14 सभी तत्वों की प्रोटॉन की तुलना करें →
- न्यूट्रॉन
- 14 सभी तत्वों की न्यूट्रॉन की तुलना करें →
- ज्ञात समस्थानिक
- 24 सभी तत्वों की ज्ञात समस्थानिक की तुलना करें →
- स्थिर समस्थानिक
- 3 सभी तत्वों की स्थिर समस्थानिक की तुलना करें →
- सबसे स्थिर समस्थानिक
- Si-28
- खोज का वर्ष
- 1824
प्रचुरता
- प्रचुरता (भूपर्पटी)
- 2.82e+5 mg/kg सभी तत्वों की प्रचुरता (भूपर्पटी) की तुलना करें →
- प्रचुरता (महासागर)
- 2.2 mg/L सभी तत्वों की प्रचुरता (महासागर) की तुलना करें →
क्रिस्टल संरचना
- जालक स्थिरांक a
- 543 pm
इलेक्ट्रॉनिक संरचना
- प्रति कोश इलेक्ट्रॉन
- 2, 8, 4 सभी तत्वों की प्रति कोश इलेक्ट्रॉन की तुलना करें →
पहचानकर्ता
- CAS संख्या
- 7440-21-3 सभी तत्वों की CAS संख्या की तुलना करें →
- टर्म प्रतीक
- 3P0
- InChI
- InChI=1S/Si
- InChI कुंजी
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N
इलेक्ट्रॉन विन्यास मापित
Si: 3s² 3p²[Ne] 3s² 3p²1s² 2s² 2p⁶ 3s² 3p²परमाणु मॉडल
समस्थानिक न्यूट्रॉन की संख्या, द्रव्यमान और स्थिरता बदलते हैं — उदासीन परमाणु का इलेक्ट्रॉन विन्यास नहीं।
सांकेतिक परमाणु मॉडल, वास्तविक अनुपात में नहीं।
परमाणु पहचान-चिह्न
उत्सर्जन / अवशोषण स्पेक्ट्रम
समस्थानिक वितरण
| द्रव्यमान संख्या | परमाणु द्रव्यमान (u) | प्राकृतिक प्रचुरता | अर्धायु |
|---|---|---|---|
| 28 स्थिर | 27.97692653465 ± 0.00000000044 | 92.2230% | स्थिर |
| 29 स्थिर | 28.9764946649 ± 0.00000000052 | 4.6850% | स्थिर |
| 30 स्थिर | 29.973770136 ± 0.000000023 | 3.0920% | स्थिर |
प्रावस्था / अवस्था
कारण: गलनांक (1413.85 °C) से 1388.8 °C कम
सांकेतिक, वास्तविक अनुपात में नहीं
प्रावस्था संक्रमण बिंदु
संक्रमण ऊर्जाएँ
गलनांक पर 1 mol को पिघलाने के लिए आवश्यक ऊर्जा
क्वथनांक पर 1 mol को वाष्पित करने के लिए आवश्यक ऊर्जा
ऊर्ध्वपातनांक पर 1 mol के ऊर्ध्वपातन के लिए आवश्यक ऊर्जा
घनत्व
मानक परिस्थितियों में
मानक परिस्थितियों में
परमाणु स्पेक्ट्रम
14 में से 10 दिखाए जा रहे हैं। आयन के आवेश के अनुसार आरोही क्रम में व्यवस्थित।
उपलब्ध स्पेक्ट्रमी रेखा डेटा ?
| आयन | आवेश | कुल रेखाएँ | संक्रमण प्रायिकताएँ | स्तर पदनाम |
|---|---|---|---|---|
| Si I | 0 | 754 | 639 | 640 |
| Si II | +1 | 590 | 474 | 474 |
| Si III | +2 | 1298 | 1288 | 1288 |
| Si IV | +3 | 332 | 314 | 314 |
| Si V | +4 | 151 | 143 | 143 |
| Si VI | +5 | 346 | 346 | 346 |
| Si VII | +6 | 233 | 233 | 233 |
| Si VIII | +7 | 269 | 269 | 269 |
| Si IX | +8 | 366 | 366 | 366 |
| Si X | +9 | 315 | 315 | 315 |
उपलब्ध ऊर्जा स्तर डेटा ?
| आयन | आवेश | स्तर |
|---|---|---|
| Si I | 0 | 542 |
| Si II | +1 | 151 |
| Si III | +2 | 189 |
| Si IV | +3 | 55 |
| Si V | +4 | 99 |
| Si VI | +5 | 72 |
| Si VII | +6 | 65 |
| Si VIII | +7 | 60 |
| Si IX | +8 | 67 |
| Si X | +9 | 55 |
आयनिक त्रिज्याएँ
| आवेश | उपसहसंयोजन | प्रचक्रण | त्रिज्या |
|---|---|---|---|
| +4 | 4 | उपलब्ध नहीं | 26 pm |
| +4 | 6 | उपलब्ध नहीं | 40 pm |
यौगिक
समस्थानिक (3)
| द्रव्यमान संख्या | परमाणु द्रव्यमान (u) | प्राकृतिक प्रचुरता | अर्धायु | क्षय का प्रकार | |
|---|---|---|---|---|---|
| 28 स्थिर | 27.97692653465 ± 0.00000000044 | 92.2230% ± 0.0190% | स्थिर | stable | |
| 29 स्थिर | 28.9764946649 ± 0.00000000052 | 4.6850% ± 0.0080% | स्थिर | stable | |
| 30 स्थिर | 29.973770136 ± 0.000000023 | 3.0920% ± 0.0110% | स्थिर | stable |
स्पेक्ट्रमी रेखाएँ
474 में से 50 दिखाए जा रहे हैं। डिफ़ॉल्ट रूप से केवल मापित तीव्रता वाली स्पेक्ट्रमी रेखाएँ दिखाई जाती हैं।
| तरंगदैर्घ्य (nm) | तीव्रता | आयनन अवस्था | प्रकार | संक्रमण | सटीकता | स्रोत | |
|---|---|---|---|---|---|---|---|
| 504.1024 nm | 1000 | Si II | emission | 3s2.4p 2P* → 3s2.4d 2D | मापित | NIST | |
| 505.5984 nm | 1000 | Si II | emission | 3s2.4p 2P* → 3s2.4d 2D | मापित | NIST | |
| 634.711 nm | 1000 | Si II | emission | 3s2.4s 2S → 3s2.4p 2P* | मापित | NIST | |
| 637.137 nm | 1000 | Si II | emission | 3s2.4s 2S → 3s2.4p 2P* | मापित | NIST | |
| 595.756 nm | 500 | Si II | emission | 3s2.4p 2P* → 3s2.5s 2S | मापित | NIST | |
| 597.893 nm | 500 | Si II | emission | 3s2.4p 2P* → 3s2.5s 2S | मापित | NIST | |
| 390.55231 nm | 300 | Si I | emission | 3s2.3p2 1S → 3s2.3p.4s 1P* | मापित | NIST | |
| 594.8541 nm | 200 | Si I | emission | 3s2.3p.4s 1P* → 3s2.3p.5p 1D | मापित | NIST | |
| 700.3569 nm | 180 | Si I | emission | 3s2.3p.4p 3D → 3s2.3p.6d 3F* | मापित | NIST | |
| 700.588 nm | 180 | Si I | emission | 3s2.3p.4p 3D → 3s2.3p.6d 3F* | मापित | NIST | |
| 570.84 nm | 160 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | मापित | NIST | |
| 462.1722 nm | 150 | Si II | emission | 3s2.4d 2D → 3s2.7f 2F* | मापित | NIST | |
| 568.4484 nm | 120 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3S | मापित | NIST | |
| 462.1418 nm | 100 | Si II | emission | 3s2.4d 2D → 3s2.7f 2F* | मापित | NIST | |
| 569.0425 nm | 100 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | मापित | NIST | |
| 579.7856 nm | 100 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3D | मापित | NIST | |
| 667.184 nm | 100 | Si II | emission | 3s.3p.(3P*).4s 4P* → 3s.3p.(3P*).4p 4D | मापित | NIST | |
| 672.1848 nm | 100 | Si I | emission | 3s2.3p.4p 1P → 3s2.3p.6d 1D* | मापित | NIST | |
| 564.5613 nm | 90 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | मापित | NIST | |
| 570.1104 nm | 90 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | मापित | NIST | |
| 579.3073 nm | 90 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3D | मापित | NIST | |
| 479.2324 nm | 80 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.(2P*<3/2>).6p<1/2> (3/2,1/2) | मापित | NIST | |
| 566.5555 nm | 80 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | मापित | NIST | |
| 697.651 nm | 80 | Si I | emission | 3s2.3p.4p 3D → 3s2.3p.6d 3F* | मापित | NIST | |
| 410.29359 nm | 70 | Si I | emission | 3s2.3p2 1S → 3s2.3p.4s 3P* | मापित | NIST | |
| 577.2146 nm | 70 | Si I | emission | 3s2.3p.4s 1P* → 3s2.3p.5p 1S | मापित | NIST | |
| 578.0384 nm | 70 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3D | मापित | NIST | |
| 719.355 nm | 65 | Si I | emission | 3s2.3p.4p 3P → 3s2.3p.6d 3D* | मापित | NIST | |
| 478.2991 nm | 50 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.(2P*<3/2>).6p<1/2> (3/2,1/2) | मापित | NIST | |
| 682.983 nm | 50 | Si II | emission | 3s2.5p 2P* → 3s2.6d 2D | मापित | NIST | |
| 575.4218 nm | 45 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | मापित | NIST | |
| 633.1956 nm | 45 | Si I | emission | 3s2.3p.4s 1P* → 3s2.3p.5p 1P | मापित | NIST | |
| 655.5463 nm | 45 | Si I | emission | 3s2.3p.4p 3D → 3s2.3p.7d 3F* | मापित | NIST | |
| 500.6059 nm | 40 | Si I | emission | 3s2.3p.4s 1P* → 3s2.3p.(2P*<3/2>).6p<3/2> (3/2,3/2) | मापित | NIST | |
| 479.2213 nm | 35 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.(2P*<1/2>).6p<1/2> (1/2,1/2) | मापित | NIST | |
| 380.6526 nm | 30 | Si III | emission | 3s.4p 3P* → 3s.4d 3D | मापित | NIST | |
| 455.2622 nm | 30 | Si III | emission | 3s.4s 3S → 3s.4p 3P* | मापित | NIST | |
| 494.7607 nm | 30 | Si I | emission | 3s2.3p.4s 1P* → 3s2.3p.(2P*<3/2>).6p<3/2> (3/2,3/2) | मापित | NIST | |
| 562.222 nm | 30 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3S | मापित | NIST | |
| 681.841 nm | 30 | Si II | emission | 3s2.5p 2P* → 3s2.6d 2D | मापित | NIST | |
| 456.784 nm | 25 | Si III | emission | 3s.4s 3S → 3s.4p 3P* | मापित | NIST | |
| 392.4468 nm | 20 | Si III | emission | 3s.4f 1F* → 3s.5g 1G | मापित | NIST | |
| 457.4757 nm | 20 | Si III | emission | 3s.4s 3S → 3s.4p 3P* | मापित | NIST | |
| 573.973 nm | 20 | Si III | emission | 3s.4s 1S → 3s.4p 1P* | मापित | NIST | |
| 669.94 nm | 20 | Si II | emission | 3s.3p.(3P*).4s 4P* → 3s.3p.(3P*).4p 4D | मापित | NIST | |
| 482.895 nm | 18 | Si III | emission | 3s.4f 3F* → 3s.5g 3G | मापित | NIST | |
| 471.6654 nm | 16 | Si III | emission | 3s.4d 1D → 3s.5f 1F* | मापित | NIST | |
| 481.9712 nm | 16 | Si III | emission | 3s.4f 3F* → 3s.5g 3G | मापित | NIST | |
| 481.3333 nm | 15 | Si III | emission | 3s.4f 3F* → 3s.5g 3G | मापित | NIST | |
| 666.503 nm | 15 | Si II | emission | 3s.3p.(3P*).4s 4P* → 3s.3p.(3P*).4p 4D | मापित | NIST |
विस्तृत गुण
सहसंयोजक त्रिज्याएँ (विस्तृत)
- सहसंयोजक त्रिज्या (प्यूक्को)
- 116 pm
- सहसंयोजक त्रिज्या (प्यूक्को, द्विबंध)
- 107 pm
- सहसंयोजक त्रिज्या (प्यूक्को, त्रिबंध)
- 102 pm
- सहसंयोजक त्रिज्या (ब्रैग)
- 117 pm
वान डर वाल्स त्रिज्याएँ
- Bondi
- 210 pm
- Batsanov
- 210 pm
- Alvarez
- 219 pm
- UFF
- 429.5 pm
- MM3
- 229 pm
- Dreiding
- 427 pm
परमाणु और धात्विक त्रिज्याएँ
- परमाणु त्रिज्या (राह्म)
- 232 pm
- धात्विक त्रिज्या (C12)
- 138 pm
संख्यांकन मापक्रम
- Mendeleev
- 88
- Pettifor
- 85
- Glawe
- 85
विद्युतऋणात्मकता मापक्रम
- Ghosh
- 0
- Miedema
- 5
- Gunnarsson–Lundqvist
- 5
- Robles–Bartolotti
- 4
ध्रुवणीयता और परिक्षेपण
- द्विध्रुव ध्रुवणीयता
- 37.3 a.u.
- द्विध्रुव ध्रुवणीयता (अनिश्चितता)
- 0.7 a.u.
- C₆
- 305 Ha·Bohr6
- C₆ (Gould–Bučko)
- 308 Ha·Bohr6
रासायनिक बंधुता
- प्रोटॉन बंधुता
- 837 kJ/mol
- गैसीय क्षारकता
- 814.1 kJ/mol
मीडेमा प्राचल
- मीडेमा मोलर आयतन
- 8.6 cm3/mol
- मीडेमा इलेक्ट्रॉन घनत्व
- 3
प्रावस्था संक्रमण और अपररूप
| गलनांक | 1687.15 K |
| क्वथनांक | 3538.15 K |
ऑक्सीकरण अवस्था की श्रेणियाँ
उन्नत संदर्भ डेटा
परिरक्षण स्थिरांक (5)
| n | कक्षक | σ |
|---|---|---|
| 1 | s | 0.4255 |
| 2 | p | 4.055 |
| 2 | s | 4.98 |
| 3 | p | 9.7148 |
| 3 | s | 9.0968 |
क्रिस्टल त्रिज्याओं का विवरण (2)
| आवेश | CN | प्रचक्रण | rcrystal (pm) | उत्पत्ति |
|---|---|---|---|---|
| 4 | IV | 40 | ||
| 4 | VI | 54 | from r^3 vs V plots, |
समस्थानिक क्षय के प्रकार (46)
| समस्थानिक | मोड | तीव्रता |
|---|---|---|
| 22 | B+ | 100% |
| 22 | B+p | 62% |
| 22 | 2p | 0.7% |
| 23 | B+ | 100% |
| 23 | B+p | 88% |
| 23 | 2p | 3.6% |
| 24 | B+ | 100% |
| 24 | B+p | 34.5% |
| 25 | B+ | 100% |
| 25 | B+p | 35% |
एक्स-रे प्रकीर्णन गुणक (756)
| ऊर्जा (eV) | f₁ | f₂ |
|---|---|---|
| 10 | — | 3.94851 |
| 10.1617 | — | 3.95531 |
| 10.3261 | — | 3.96212 |
| 10.4931 | — | 3.96894 |
| 10.6628 | — | 3.97577 |
| 10.8353 | — | 3.98262 |
| 11.0105 | — | 3.98948 |
| 11.1886 | — | 3.99635 |
| 11.3696 | — | 4.00322 |
| 11.5535 | — | 4.01012 |
अतिरिक्त डेटा
Estimated Crustal Abundance
The estimated element abundance in the earth's crust.
2.82×105 milligrams per kilogram
संदर्भ (1)
Estimated Oceanic Abundance
The estimated element abundance in the earth's oceans.
2.2 milligrams per liter
संदर्भ (1)
Sources
Sources of this element.
Silicon is present in the sun and stars and is a principal component of a class of meteorites known as aerolites. It is also a component of tektites, a natural glass of uncertain origin.
Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, being exceeded only by oxygen. Silicon is not found free in nature, but occurs chiefly as the oxide and as silicates. Sand, quartz, rock crystal, amethyst, agate, flint, jasper, and opal are some of the forms in which the oxide appears. Granite, hornblende, asbestos, feldspar, clay, mica, etc. are but a few of the numerous silicate minerals.
Silicon is prepared commercially by heating silica and carbon in an electric furnace, using carbon electrodes. Several other methods can be used for preparing the element. Amorphous silicon can be prepared as a brown powder, which can be easily melted or vaporized. The Czochralski process is commonly used to produce single crystals of silicon used for solid-state or semiconductor devices. Hyperpure silicon can be prepared by the thermal decomposition of ultra-pure trichlorosilane in a hydrogen atmosphere, and by a vacuum float zone process.
संदर्भ (1)
- [6] Silicon https://periodic.lanl.gov/14.shtml
संदर्भ
(9)
Data deposited in or computed by PubChem
The half-life and atomic mass data was provided by the Atomic Mass Data Center at the International Atomic Energy Agency.
Element data are cited from the Atomic weights of the elements (an IUPAC Technical Report). The IUPAC periodic table of elements can be found at https://iupac.org/what-we-do/periodic-table-of-elements/. Additional information can be found within IUPAC publication doi:10.1515/pac-2015-0703 Copyright © 2020 International Union of Pure and Applied Chemistry.
The information are cited from Pure Appl. Chem. 2018; 90(12): 1833-2092, https://doi.org/10.1515/pac-2015-0703.
Thomas Jefferson National Accelerator Facility (Jefferson Lab) is one of 17 national laboratories funded by the U.S. Department of Energy. The lab's primary mission is to conduct basic research of the atom's nucleus using the lab's unique particle accelerator, known as the Continuous Electron Beam Accelerator Facility (CEBAF). For more information visit https://www.jlab.org/
The periodic table at the LANL (Los Alamos National Laboratory) contains basic element information together with the history, source, properties, use, handling and more. The provenance data may be found from the link under the source name.
The periodic table contains NIST's critically-evaluated data on atomic properties of the elements. The provenance data that include data for atomic spectroscopy, X-ray and gamma ray, radiation dosimetry, nuclear physics, and condensed matter physics may be found from the link under the source name. Ref: https://www.nist.gov/pml/atomic-spectra-database
This section provides all form of data related to element Silicon.
The element property data was retrieved from publications.