Silicon (Si)
metalloidSolid
প্রমিত পারমাণবিক ওজন
28.085 u [২৮.০৮৪, ২৮.০৮৬]ইলেকট্রন বিন্যাস
[Ne] 3s2 3p2গলনাঙ্ক
1413.85 °Cস্ফুটনাঙ্ক
3264.85 °Cঘনত্ব
2329.6 kg/m³জারণ অবস্থা
−4, −3, −2, −1, 0, +1, +2, +3, +4তড়িৎঋণাত্মকতা (পাউলিং)
1.9আয়নীকরণ শক্তি (প্রথম)
8.15168 eVআবিষ্কারের বছর
1824পারমাণবিক ব্যাসার্ধ
110 pmবিস্তারিত
Silicon is a hard, brittle metalloid in group 14. It is tetravalent in most compounds and forms strong bonds to oxygen, making silicates the dominant minerals of Earth’s crust. Elemental silicon is central to modern electronics because its oxide, silicon dioxide, can be grown as a stable insulating layer. In bulk chemistry it is less reactive than carbon at ordinary temperatures, but it dissolves or reacts under strongly alkaline, oxidizing, or high-temperature conditions.
Crystalline silicon has a metallic luster and grayish color. Silicon is a relatively inert element, but it is attacked by halogens and dilute alkali. Most acids, except hydrofluoric, do not affect it. Elemental silicon transmits more than 95% of all wavelengths of infrared, from 1.3 to 6.y micro-m.
The name derives from the Latin silex and silicis for "flint". Amorphous silicon was discovered by the Swedish chemist Jöns Jacob Berzelius in 1824. Crystalline silicon was first prepared by the French chemist Henri Sainte-Claire Deville in 1854.
Silicon was discovered by Jöns Jacob Berzelius, a Swedish chemist, in 1824 by heating chips of potassium in a silica container and then carefully washing away the residual by-products. Silicon is the seventh most abundant element in the universe and the second most abundant element in the earth's crust. Today, silicon is produced by heating sand (SiO2) with carbon to temperatures approaching 2200°C.
From the Latin. word silex, silicis, flint. In 1800, Davy thought silica to be a compound and not an element; but in 1811, Gay Lussac and Thenard probably prepared impure amorphous silicon by heating potassium with silicon tetrafluoride.
In 1824 Berzelius, generally credited with the discovery, prepared amorphous silicon by the same general method and purified the product by removing the fluosilicates by repeated washings. Deville in 1854 first prepared crystalline silicon, the second allotropic form of the element.
Pure crystalline silicon is a dark gray solid with a metallic luster and a diamond-cubic structure. It is brittle rather than malleable. Amorphous silicon is usually a brown to dark gray powder or thin film, with properties that depend strongly on preparation.
High-purity silicon is used for integrated circuits, power electronics, sensors, and photovoltaic cells. Lower-purity metallurgical silicon is used to make aluminum-silicon casting alloys, silicones, silanes, and silica-derived materials. Ferrosilicon is an important deoxidizer and alloying additive in steelmaking. Silicon carbide abrasives and refractories are often produced from silica and carbon, but their use depends on the compound rather than the free element.
Two allotropes of silicon exist at room temperature: amorphous and crystalline. Amorphous appears as a brown powder while crystalline silicon has a metallic luster and a grayish color. Single crystals of crystalline silicon can be grown with a process known as the Czochralski process. These crystals, when doped with elements such as boron, gallium, germanium, phosphorus or arsenic, are used in the manufacture of solid-state electronic devices, such as transistors, solar cells, rectifiers and microchips.
Silicon dioxide (SiO2), silicon's most common compound, is the most abundant compound in the earth's crust. It commonly takes the form of ordinary sand, but also exists as quartz, rock crystal, amethyst, agate, flint, jasper and opal. Silicon dioxide is extensively used in the manufacture of glass and bricks. Silica gel, a colloidal form of silicon dioxide, easily absorbs moisture and is used as a desiccant.
Silicon forms other useful compounds. Silicon carbide (SiC) is nearly as hard as diamond and is used as an abrasive. Sodium silicate (Na2SiO3), also known as water glass, is used in the production of soaps, adhesives and as an egg preservative. Silicon tetrachloride (SiCl4) is used to create smoke screens. Silicon is also an important ingredient in silicone, a class of material that is used for such things as lubricants, polishing agents, electrical insulators and medical implants.
Silicon is one of man's most useful elements. In the form of sand and clay it is used to make concrete and brick; it is a useful refractory material for high-temperature work, and in the form of silicates it is used in making enamels, pottery, etc. Silica, as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Glass can be made in a very great variety of shapes, and is used as containers, window glass, insulators, and thousands of other uses. Silicon tetrachloride can be used as iridize glass.
Hyperpure silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics and space-age industries.
Hydrogenated amorphous silicon has shown promise in producing economical cells for converting solar energy into electricity.
Silicon is important to plant and animal life. Diatoms in both fresh and salt water extract Silica from the water to build their cell walls. Silica is present in the ashes of plants and in the human skeleton. Silicon is an important ingredient in steel; silicon carbide is one of the most important abrasives and has been used in lasers to produce coherent light of 4560 A.
Silcones are important products of silicon. They may be prepared by hydrolyzing a silicon organic chloride, such as dimethyl silicon chloride. Hydrolysis and condensation of various substituted chlorosilanes can be used to produce a very great number of polymeric products, or silicones, ranging from liquids to hard, glasslike solids with many useful properties.
Isotopes in Earth/Planetary Science
Because molecules, atoms, and ions of the stable isotopes of silicon possess slightly different physical and chemical properties, they commonly will be fractionated during physical, chemical, and biological processes, giving rise to variations in isotopic abundances and in atomic weights. There are substantial variations in the isotopic abundances of silicon in natural terrestrial materials (Fig. IUPAC.14.1). These variations are useful in investigating the origin of substances and studying environmental, hydrological, and geological processes [13] M. W. Wieser, T. B. Coplen. Pure Appl Chem.83, 359 (2011)., [17] T. B. Coplen, J. A. Hopple, J. K. Böhlke, H. S. Peiser, S. E. Rieder, H. R. Krouse, K. J. R. Rosman, T. Ding, R. D. Vocke, K. Revesz, A. Lamberty, P. D. P. Taylor, P. D. Bièvre. United States Geological Survey Water-Resources Investigations Report, 01-4222, (2002).. Diatoms, a major group of algae, need silicon to build up their opaline shells and prefer 28Si while taking up Si(OH)4, which is the biologically available form of silicon in the marine environment. This progressively enriches surface waters with 29Si and 30Si [123] S. Kristiansen, T. Farbrot, L. J. Naustvoll. Limnol. Oceanogr.45, 472 (2000).. 32Si-labeled silicic acid of high specific radioactivity is used to measure uptake rates of Si and estimate marine sedimentation of biogenic (created by living organisms) silica (by diatoms and sea shells). By performing uptake kinetic experiments, the 32Si activity can be measured as 32P using counting of Cherenkov radiation (radiation produced by charged particles passing through a medium at a speed greater than that of light through the same medium — after Soviet physicist Pavel A. Cherenkov) with a liquid scintillation analyzer (measuring ionizing radiation using the interaction of radiation on a material and counting the resulting photon emissions).
Isotopes in Geochronology
Cosmogenic 32Si has a half-life of about 150 years and is produced by cosmic-ray spallation of argon in the stratosphere and troposphere [124] C. Schnabel, J. Beer, H. B. Clausen. Geophys. Res. Abstr.11, (2009).. 32Si in dust is precipitated in snow, making it possible to date dust in snow and glacial ice (Fig. IUPAC.14.2). Glaciers are archives for global climate history because they contain a variety of proxies (imprints of past environmental conditions used to interpret paleoclimate) for climate forcing and climate response. Cosmogenic 32Si that is stored in glaciers and ice-core samples can be analyzed using accelerator mass spectrometry to date when sections of glaciers formed [125] SAHRA – Sustainability of Semi-Arid Hydrology and Riparian Areas. Silicon, SAHRA – Sustainability of Semi-Arid Hydrology and Riparian Areas (2014), Feb. 24; http://web.sahra.arizona.edu/programs/isotopes/silicon.html., [126] GNS Science. Climate Change Studies & Ice Core Research, GNS Science (2014), Feb. 24; http://www.gns.cri.nz/Home/Services/Laboratories-Facilities/Tritium-and-Water-Dating-Laboratory/Research-Programmes/Climate-change-studies-ice-core-research..
Isotopes in Industry
At Keio University in Japan, the Itoh Research Group has developed a method that utilizes 29Si to store and process information. The Itoh Research Group focused on manipulating the nanostructure of materials at an atomic level, especially with semiconductors such as silicon. Their manipulations and observations demonstrate that differences in the nuclear spin and mass of an isotope affects the ease of further manipulation of the isotope [128] Kohei ITOH research group at Keio University, Japan. Itoh Group at Keio University, Japan, Kohei ITOH research group at Keio University, Japan (2014), Feb. 24; http://www.appi.keio.ac.jp/Itoh_group/research/., [129] T. Itahashi, H. Hayashi, M. R. Rahman, K. M. Itoh, L. S. Vlasenko, M. P. Vlasenko, D. S. Poloskin. Phys. Rev. B87, 075201-1 (2013)..
Silicon crystals enriched to higher than 99.99 percent purity of 28Si are being used in the Avogadro Project. This project is intended to remeasure the Avogadro constant (NA), which is the proportionality factor between the amount of substance and number of elementary entities [130] R. Marquardt, J. Meija, Z. Mester, M. Towns, R. Weir, R. Davis, J. Stohner. Pure Appl. Chem.90, 175 (2018)..
Silicon chemistry is dominated by the +4 oxidation state, although lower formal states occur in some silicides and specialized molecular compounds. Silicon dioxide, SiO₂, occurs as quartz and many other forms and is the basis of glass, ceramics, and semiconductor gate oxides. Silicates contain SiO₄ tetrahedra in isolated, chain, sheet, or framework arrangements. Silicon tetrachloride, SiCl₄, and trichlorosilane, HSiCl₃, are important intermediates for purified silicon and organosilicon chemistry. Silicones contain Si–O backbones with organic substituents.
See more information at the Silicon compound page.
Bulk crystalline silicon has low chemical toxicity, but fine silicon dust can irritate the eyes and respiratory tract and may pose dust-explosion risks in air. Inhalation hazards are more serious for respirable crystalline silica, SiO₂, which can cause silicosis; that risk belongs to the oxide, not elemental silicon. Silanes such as silane, SiH₄, can be pyrophoric or highly flammable. Semiconductor processing also involves corrosive and toxic reagents not inherent to silicon itself.
Miners, stonecutters, and others engaged in work where siliceous dust is breathed into large quantities often develop a serious lung disease known as silicosis.
Silicon is a major component of soils, rocks, clays, and natural waters, mostly as silicates and dissolved silicic acid, H₄SiO₄. Weathering releases soluble silicon, which rivers carry to lakes and oceans. Diatoms, radiolarians, and some plants use silica biomineralization, linking silicon to biological and sedimentary cycles. Elemental silicon is not persistent as a native environmental material under surface conditions.
Silicon is produced industrially by reducing quartz or other high-silica feedstocks with carbon in electric arc furnaces, yielding metallurgical-grade material. Semiconductor and solar uses require further purification and crystal growth or deposition, which are energy- and capital-intensive steps. Demand is split between large-volume alloy and chemical markets and smaller but very high-purity electronic markets. Recycling occurs in aluminum alloys and semiconductor manufacturing scrap, but end-of-life recovery from complex electronics is limited by dilution and contamination.
Silicon is present in the sun and stars and is a principal component of a class of meteorites known as aerolites. It is also a component of tektites, a natural glass of uncertain origin.
Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, being exceeded only by oxygen. Silicon is not found free in nature, but occurs chiefly as the oxide and as silicates. Sand, quartz, rock crystal, amethyst, agate, flint, jasper, and opal are some of the forms in which the oxide appears. Granite, hornblende, asbestos, feldspar, clay, mica, etc. are but a few of the numerous silicate minerals.
Silicon is prepared commercially by heating silica and carbon in an electric furnace, using carbon electrodes. Several other methods can be used for preparing the element. Amorphous silicon can be prepared as a brown powder, which can be easily melted or vaporized. The Czochralski process is commonly used to produce single crystals of silicon used for solid-state or semiconductor devices. Hyperpure silicon can be prepared by the thermal decomposition of ultra-pure trichlorosilane in a hydrogen atmosphere, and by a vacuum float zone process.
Silicon is among the more abundant heavy elements in the cosmos. It is formed in massive stars during advanced burning stages and is further redistributed by supernovae. In rocky planets and meteorites it is chiefly bound with oxygen and metals as silicate minerals. Spectral features of silicate dust are common in interstellar and circumstellar environments.
- The natural oxide on silicon is only a few nanometers thick but is chemically important.
- Ultra-pure silicon crystals can be grown with impurity levels far below one part per billion.
- Dopants such as boron or phosphorus control whether silicon behaves as p-type or n-type semiconductor material.
- Many common gemstones, including quartz varieties, are forms or mixtures dominated by SiO₂.
- Silicon expands on freezing, like water and a few other substances.
ছবি
ধর্ম
ভৌত
- পারমাণবিক ব্যাসার্ধ (পরীক্ষালব্ধ)
- 110 pm সব মৌলের পারমাণবিক ব্যাসার্ধ (পরীক্ষালব্ধ) তুলনা করুন →
- সমযোজী ব্যাসার্ধ
- 111 pm সব মৌলের সমযোজী ব্যাসার্ধ তুলনা করুন →
- ভ্যান ডার ওয়ালস ব্যাসার্ধ
- 210 pm সব মৌলের ভ্যান ডার ওয়ালস ব্যাসার্ধ তুলনা করুন →
- ধাতব ব্যাসার্ধ
- 117 pm সব মৌলের ধাতব ব্যাসার্ধ তুলনা করুন →
- ঘনত্ব
- 2329.6 kg/m³ সব মৌলের ঘনত্ব তুলনা করুন →
- মোলার আয়তন
- 0.0121 L/mol
- STP-তে দশা
- কঠিন সব মৌলের STP-তে দশা তুলনা করুন →
- গলনাঙ্ক
- 1413.85 °C সব মৌলের গলনাঙ্ক তুলনা করুন →
- স্ফুটনাঙ্ক
- 3264.85 °C সব মৌলের স্ফুটনাঙ্ক তুলনা করুন →
- তাপ পরিবাহিতা
- 149 W/(m·K) সব মৌলের তাপ পরিবাহিতা তুলনা করুন →
- আপেক্ষিক তাপধারণ ক্ষমতা
- 0.712 J/(g·K) সব মৌলের আপেক্ষিক তাপধারণ ক্ষমতা তুলনা করুন →
- মোলার তাপধারণ ক্ষমতা
- 19.99 J/(mol·K) সব মৌলের মোলার তাপধারণ ক্ষমতা তুলনা করুন →
- স্ফটিক গঠন
- হীরকের ঘনকীয় গঠন সব মৌলের স্ফটিক গঠন তুলনা করুন →
রাসায়নিক
- তড়িৎঋণাত্মকতা (পাউলিং)
- 1.9 সব মৌলের তড়িৎঋণাত্মকতা (পাউলিং) তুলনা করুন →
- তড়িৎঋণাত্মকতা (অ্যালেন)
- 1.916
- ইলেকট্রন আসক্তি
- 1.385 eV
- আয়নীকরণ শক্তি (প্রথম)
- 8.15168 eV সব মৌলের আয়নীকরণ শক্তি (প্রথম) তুলনা করুন →
- আয়নীকরণ শক্তি (দ্বিতীয়)
- 16.345906 eV সব মৌলের আয়নীকরণ শক্তি (দ্বিতীয়) তুলনা করুন →
- আয়নীকরণ শক্তি (তৃতীয়)
- 33.493115 eV সব মৌলের আয়নীকরণ শক্তি (তৃতীয়) তুলনা করুন →
- আয়নীকরণ শক্তি (চতুর্থ)
- 45.141945 eV সব মৌলের আয়নীকরণ শক্তি (চতুর্থ) তুলনা করুন →
- আয়নীকরণ শক্তি (পঞ্চম)
- 166.767574 eV সব মৌলের আয়নীকরণ শক্তি (পঞ্চম) তুলনা করুন →
- জারণ অবস্থা
- −4, −3, −2, −1, 0, +1, +2, +3, +4 সব মৌলের জারণ অবস্থা তুলনা করুন →
- যোজ্যতা ইলেকট্রন
- 4 সব মৌলের যোজ্যতা ইলেকট্রন তুলনা করুন →
- ইলেকট্রন বিন্যাস
- [Ne] 3s2 3p2
তাপগতীয়
- গলন তাপ
- 0.52039177 eV সব মৌলের গলন তাপ তুলনা করুন →
- বাষ্পীভবন তাপ
- 3.720786 eV সব মৌলের বাষ্পীভবন তাপ তুলনা করুন →
- ঊর্ধ্বপাতন তাপ
- 4.670778 eV
- পরমাণুকরণ তাপ
- 4.670778 eV
- পরমাণুকরণ এনথালপি
- 4.663937 eV
নিউক্লীয়
- প্রোটন
- 14 সব মৌলের প্রোটন তুলনা করুন →
- নিউট্রন
- 14 সব মৌলের নিউট্রন তুলনা করুন →
- পরিচিত আইসোটোপ
- 24 সব মৌলের পরিচিত আইসোটোপ তুলনা করুন →
- স্থিতিশীল আইসোটোপ
- 3 সব মৌলের স্থিতিশীল আইসোটোপ তুলনা করুন →
- সবচেয়ে স্থিতিশীল আইসোটোপ
- Si-28
- আবিষ্কারের বছর
- 1824
প্রাচুর্য
- প্রাচুর্য (ভূত্বক)
- 2.82e+5 mg/kg সব মৌলের প্রাচুর্য (ভূত্বক) তুলনা করুন →
- প্রাচুর্য (মহাসাগর)
- 2.2 mg/L সব মৌলের প্রাচুর্য (মহাসাগর) তুলনা করুন →
স্ফটিক গঠন
- জালক ধ্রুবক a
- 543 pm
ইলেকট্রনীয় গঠন
- প্রতি শক্তিস্তরে ইলেকট্রন
- 2, 8, 4 সব মৌলের প্রতি শক্তিস্তরে ইলেকট্রন তুলনা করুন →
শনাক্তকারী
- CAS নম্বর
- 7440-21-3 সব মৌলের CAS নম্বর তুলনা করুন →
- টার্ম প্রতীক
- 3P0
- InChI
- InChI=1S/Si
- InChI Key
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N
ইলেকট্রন বিন্যাস পরিমাপকৃত
Si: 3s² 3p²[Ne] 3s² 3p²1s² 2s² 2p⁶ 3s² 3p²পারমাণবিক মডেল
আইসোটোপভেদে নিউট্রনের সংখ্যা, ভর ও স্থিতিশীলতা পরিবর্তিত হয় — নিরপেক্ষ পরমাণুর ইলেকট্রন বিন্যাস নয়।
পারমাণবিক মডেলের রূপরেখা, প্রকৃত অনুপাতে নয়।
পারমাণবিক স্বতন্ত্র পরিচয়চিহ্ন
নিঃসরণ / শোষণ বর্ণালি
আইসোটোপের বণ্টন
| ভরসংখ্যা | পারমাণবিক ভর (u) | প্রাকৃতিক প্রাচুর্য | অর্ধায়ু |
|---|---|---|---|
| 28 স্থিতিশীল | ২৭.৯৭৬৯২৬৫৩৪৬৫ ± ০.০০০০০০০০০৪৪ | 92.2230% | স্থিতিশীল |
| 29 স্থিতিশীল | ২৮.৯৭৬৪৯৪৬৬৪৯ ± ০.০০০০০০০০০৫২ | 4.6850% | স্থিতিশীল |
| 30 স্থিতিশীল | ২৯.৯৭৩৭৭০১৩৬ ± ০.০০০০০০০২৩ | 3.0920% | স্থিতিশীল |
দশা / অবস্থা
কারণ: গলনাঙ্কের (1413.85 °C) চেয়ে 1388.8 °C কম
রূপরেখামূলক, প্রকৃত অনুপাতে নয়
দশান্তর বিন্দু
দশান্তর শক্তি
গলনাঙ্কে 1 mol গলাতে প্রয়োজনীয় শক্তি
স্ফুটনাঙ্কে 1 mol বাষ্পীভূত করতে প্রয়োজনীয় শক্তি
ঊর্ধ্বপাতনাঙ্কে 1 mol ঊর্ধ্বপাতিত করতে প্রয়োজনীয় শক্তি
ঘনত্ব
প্রমিত শর্তে
প্রমিত শর্তে
পারমাণবিক বর্ণালি
14টির মধ্যে 10টি দেখানো হচ্ছে। আয়নের আধান অনুযায়ী সাজানো (ঊর্ধ্বক্রমে)।
সংরক্ষিত বর্ণালিরেখার তথ্য ?
| আয়ন | আধান | মোট রেখা | অবস্থান্তরের সম্ভাবনা | স্তরের নির্দেশক |
|---|---|---|---|---|
| Si I | 0 | 754 | 639 | 640 |
| Si II | +1 | 590 | 474 | 474 |
| Si III | +2 | 1298 | 1288 | 1288 |
| Si IV | +3 | 332 | 314 | 314 |
| Si V | +4 | 151 | 143 | 143 |
| Si VI | +5 | 346 | 346 | 346 |
| Si VII | +6 | 233 | 233 | 233 |
| Si VIII | +7 | 269 | 269 | 269 |
| Si IX | +8 | 366 | 366 | 366 |
| Si X | +9 | 315 | 315 | 315 |
সংরক্ষিত শক্তিস্তর তথ্য ?
| আয়ন | আধান | স্তর |
|---|---|---|
| Si I | 0 | 542 |
| Si II | +1 | 151 |
| Si III | +2 | 189 |
| Si IV | +3 | 55 |
| Si V | +4 | 99 |
| Si VI | +5 | 72 |
| Si VII | +6 | 65 |
| Si VIII | +7 | 60 |
| Si IX | +8 | 67 |
| Si X | +9 | 55 |
আয়নিক ব্যাসার্ধ
| আধান | সমন্বয় | স্পিন | ব্যাসার্ধ |
|---|---|---|---|
| +4 | 4 | তথ্য নেই | 26 pm |
| +4 | 6 | তথ্য নেই | 40 pm |
যৌগ
আইসোটোপ (3)
| ভরসংখ্যা | পারমাণবিক ভর (u) | প্রাকৃতিক প্রাচুর্য | অর্ধায়ু | ক্ষয়প্রণালি | |
|---|---|---|---|---|---|
| 28 স্থিতিশীল | ২৭.৯৭৬৯২৬৫৩৪৬৫ ± ০.০০০০০০০০০৪৪ | 92.2230% ± 0.0190% | স্থিতিশীল | stable | |
| 29 স্থিতিশীল | ২৮.৯৭৬৪৯৪৬৬৪৯ ± ০.০০০০০০০০০৫২ | 4.6850% ± 0.0080% | স্থিতিশীল | stable | |
| 30 স্থিতিশীল | ২৯.৯৭৩৭৭০১৩৬ ± ০.০০০০০০০২৩ | 3.0920% ± 0.0110% | স্থিতিশীল | stable |
বর্ণালিরেখা
474টির মধ্যে 50টি দেখানো হচ্ছে। ডিফল্টভাবে কেবল পরিমাপকৃত তীব্রতাযুক্ত বর্ণালিরেখা দেখানো হয়।
| তরঙ্গদৈর্ঘ্য (nm) | তীব্রতা | আয়নীকরণ পর্যায় | ধরন | অবস্থান্তর | নির্ভুলতা | উৎস | |
|---|---|---|---|---|---|---|---|
| 504.1024 nm | 1000 | Si II | emission | 3s2.4p 2P* → 3s2.4d 2D | পরিমাপকৃত | NIST | |
| 505.5984 nm | 1000 | Si II | emission | 3s2.4p 2P* → 3s2.4d 2D | পরিমাপকৃত | NIST | |
| 634.711 nm | 1000 | Si II | emission | 3s2.4s 2S → 3s2.4p 2P* | পরিমাপকৃত | NIST | |
| 637.137 nm | 1000 | Si II | emission | 3s2.4s 2S → 3s2.4p 2P* | পরিমাপকৃত | NIST | |
| 595.756 nm | 500 | Si II | emission | 3s2.4p 2P* → 3s2.5s 2S | পরিমাপকৃত | NIST | |
| 597.893 nm | 500 | Si II | emission | 3s2.4p 2P* → 3s2.5s 2S | পরিমাপকৃত | NIST | |
| 390.55231 nm | 300 | Si I | emission | 3s2.3p2 1S → 3s2.3p.4s 1P* | পরিমাপকৃত | NIST | |
| 594.8541 nm | 200 | Si I | emission | 3s2.3p.4s 1P* → 3s2.3p.5p 1D | পরিমাপকৃত | NIST | |
| 700.3569 nm | 180 | Si I | emission | 3s2.3p.4p 3D → 3s2.3p.6d 3F* | পরিমাপকৃত | NIST | |
| 700.588 nm | 180 | Si I | emission | 3s2.3p.4p 3D → 3s2.3p.6d 3F* | পরিমাপকৃত | NIST | |
| 570.84 nm | 160 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | পরিমাপকৃত | NIST | |
| 462.1722 nm | 150 | Si II | emission | 3s2.4d 2D → 3s2.7f 2F* | পরিমাপকৃত | NIST | |
| 568.4484 nm | 120 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3S | পরিমাপকৃত | NIST | |
| 462.1418 nm | 100 | Si II | emission | 3s2.4d 2D → 3s2.7f 2F* | পরিমাপকৃত | NIST | |
| 569.0425 nm | 100 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | পরিমাপকৃত | NIST | |
| 579.7856 nm | 100 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3D | পরিমাপকৃত | NIST | |
| 667.184 nm | 100 | Si II | emission | 3s.3p.(3P*).4s 4P* → 3s.3p.(3P*).4p 4D | পরিমাপকৃত | NIST | |
| 672.1848 nm | 100 | Si I | emission | 3s2.3p.4p 1P → 3s2.3p.6d 1D* | পরিমাপকৃত | NIST | |
| 564.5613 nm | 90 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | পরিমাপকৃত | NIST | |
| 570.1104 nm | 90 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | পরিমাপকৃত | NIST | |
| 579.3073 nm | 90 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3D | পরিমাপকৃত | NIST | |
| 479.2324 nm | 80 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.(2P*<3/2>).6p<1/2> (3/2,1/2) | পরিমাপকৃত | NIST | |
| 566.5555 nm | 80 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | পরিমাপকৃত | NIST | |
| 697.651 nm | 80 | Si I | emission | 3s2.3p.4p 3D → 3s2.3p.6d 3F* | পরিমাপকৃত | NIST | |
| 410.29359 nm | 70 | Si I | emission | 3s2.3p2 1S → 3s2.3p.4s 3P* | পরিমাপকৃত | NIST | |
| 577.2146 nm | 70 | Si I | emission | 3s2.3p.4s 1P* → 3s2.3p.5p 1S | পরিমাপকৃত | NIST | |
| 578.0384 nm | 70 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3D | পরিমাপকৃত | NIST | |
| 719.355 nm | 65 | Si I | emission | 3s2.3p.4p 3P → 3s2.3p.6d 3D* | পরিমাপকৃত | NIST | |
| 478.2991 nm | 50 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.(2P*<3/2>).6p<1/2> (3/2,1/2) | পরিমাপকৃত | NIST | |
| 682.983 nm | 50 | Si II | emission | 3s2.5p 2P* → 3s2.6d 2D | পরিমাপকৃত | NIST | |
| 575.4218 nm | 45 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | পরিমাপকৃত | NIST | |
| 633.1956 nm | 45 | Si I | emission | 3s2.3p.4s 1P* → 3s2.3p.5p 1P | পরিমাপকৃত | NIST | |
| 655.5463 nm | 45 | Si I | emission | 3s2.3p.4p 3D → 3s2.3p.7d 3F* | পরিমাপকৃত | NIST | |
| 500.6059 nm | 40 | Si I | emission | 3s2.3p.4s 1P* → 3s2.3p.(2P*<3/2>).6p<3/2> (3/2,3/2) | পরিমাপকৃত | NIST | |
| 479.2213 nm | 35 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.(2P*<1/2>).6p<1/2> (1/2,1/2) | পরিমাপকৃত | NIST | |
| 380.6526 nm | 30 | Si III | emission | 3s.4p 3P* → 3s.4d 3D | পরিমাপকৃত | NIST | |
| 455.2622 nm | 30 | Si III | emission | 3s.4s 3S → 3s.4p 3P* | পরিমাপকৃত | NIST | |
| 494.7607 nm | 30 | Si I | emission | 3s2.3p.4s 1P* → 3s2.3p.(2P*<3/2>).6p<3/2> (3/2,3/2) | পরিমাপকৃত | NIST | |
| 562.222 nm | 30 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3S | পরিমাপকৃত | NIST | |
| 681.841 nm | 30 | Si II | emission | 3s2.5p 2P* → 3s2.6d 2D | পরিমাপকৃত | NIST | |
| 456.784 nm | 25 | Si III | emission | 3s.4s 3S → 3s.4p 3P* | পরিমাপকৃত | NIST | |
| 392.4468 nm | 20 | Si III | emission | 3s.4f 1F* → 3s.5g 1G | পরিমাপকৃত | NIST | |
| 457.4757 nm | 20 | Si III | emission | 3s.4s 3S → 3s.4p 3P* | পরিমাপকৃত | NIST | |
| 573.973 nm | 20 | Si III | emission | 3s.4s 1S → 3s.4p 1P* | পরিমাপকৃত | NIST | |
| 669.94 nm | 20 | Si II | emission | 3s.3p.(3P*).4s 4P* → 3s.3p.(3P*).4p 4D | পরিমাপকৃত | NIST | |
| 482.895 nm | 18 | Si III | emission | 3s.4f 3F* → 3s.5g 3G | পরিমাপকৃত | NIST | |
| 471.6654 nm | 16 | Si III | emission | 3s.4d 1D → 3s.5f 1F* | পরিমাপকৃত | NIST | |
| 481.9712 nm | 16 | Si III | emission | 3s.4f 3F* → 3s.5g 3G | পরিমাপকৃত | NIST | |
| 481.3333 nm | 15 | Si III | emission | 3s.4f 3F* → 3s.5g 3G | পরিমাপকৃত | NIST | |
| 666.503 nm | 15 | Si II | emission | 3s.3p.(3P*).4s 4P* → 3s.3p.(3P*).4p 4D | পরিমাপকৃত | NIST |
বিস্তৃত ধর্ম
সমযোজী ব্যাসার্ধ (বিস্তৃত)
- সমযোজী ব্যাসার্ধ (পিউক্কো)
- 116 pm
- সমযোজী ব্যাসার্ধ (পিউক্কো, দ্বিবন্ধন)
- 107 pm
- সমযোজী ব্যাসার্ধ (পিউক্কো, ত্রিবন্ধন)
- 102 pm
- সমযোজী ব্যাসার্ধ (ব্র্যাগ)
- 117 pm
ভ্যান ডার ওয়ালস ব্যাসার্ধ
- Bondi
- 210 pm
- Batsanov
- 210 pm
- Alvarez
- 219 pm
- UFF
- 429.5 pm
- MM3
- 229 pm
- Dreiding
- 427 pm
পারমাণবিক ও ধাতব ব্যাসার্ধ
- পারমাণবিক ব্যাসার্ধ (রাম)
- 232 pm
- ধাতব ব্যাসার্ধ (C12)
- 138 pm
সংখ্যায়ন স্কেল
- Mendeleev
- 88
- Pettifor
- 85
- Glawe
- 85
তড়িৎঋণাত্মকতার স্কেল
- Ghosh
- 0
- Miedema
- 5
- Gunnarsson–Lundqvist
- 5
- Robles–Bartolotti
- 4
মেরুকরণযোগ্যতা ও বিচ্ছুরণ
- দ্বিমেরু মেরুকরণযোগ্যতা
- 37.3 a.u.
- দ্বিমেরু মেরুকরণযোগ্যতা (অনিশ্চয়তা)
- 0.7 a.u.
- C₆
- 305 Ha·Bohr6
- C₆ (Gould–Bučko)
- 308 Ha·Bohr6
রাসায়নিক আসক্তি
- প্রোটন আসক্তি
- 837 kJ/mol
- গ্যাসীয় ক্ষারকত্ব
- 814.1 kJ/mol
মিডেমা পরামিতি
- মিডেমা মোলার আয়তন
- 8.6 cm3/mol
- মিডেমা ইলেকট্রন ঘনত্ব
- 3
দশান্তর ও রূপভেদ
| গলনাঙ্ক | 1687.15 K |
| স্ফুটনাঙ্ক | 3538.15 K |
জারণ অবস্থার শ্রেণি
উন্নত তথ্যসূত্রের উপাত্ত
আচ্ছাদন ধ্রুবক (5)
| n | অরবিটাল | σ |
|---|---|---|
| 1 | s | 0.4255 |
| 2 | p | 4.055 |
| 2 | s | 4.98 |
| 3 | p | 9.7148 |
| 3 | s | 9.0968 |
স্ফটিক ব্যাসার্ধের বিস্তারিত (2)
| আধান | CN | স্পিন | rcrystal (pm) | উৎস |
|---|---|---|---|---|
| 4 | IV | 40 | ||
| 4 | VI | 54 | from r^3 vs V plots, |
আইসোটোপের ক্ষয়প্রণালি (46)
| আইসোটোপ | মোড | তীব্রতা |
|---|---|---|
| 22 | B+ | 100% |
| 22 | B+p | 62% |
| 22 | 2p | 0.7% |
| 23 | B+ | 100% |
| 23 | B+p | 88% |
| 23 | 2p | 3.6% |
| 24 | B+ | 100% |
| 24 | B+p | 34.5% |
| 25 | B+ | 100% |
| 25 | B+p | 35% |
এক্স-রে বিক্ষেপণ গুণক (756)
| শক্তি (eV) | f₁ | f₂ |
|---|---|---|
| 10 | — | 3.94851 |
| 10.1617 | — | 3.95531 |
| 10.3261 | — | 3.96212 |
| 10.4931 | — | 3.96894 |
| 10.6628 | — | 3.97577 |
| 10.8353 | — | 3.98262 |
| 11.0105 | — | 3.98948 |
| 11.1886 | — | 3.99635 |
| 11.3696 | — | 4.00322 |
| 11.5535 | — | 4.01012 |
অতিরিক্ত তথ্য
Estimated Crustal Abundance
The estimated element abundance in the earth's crust.
2.82×105 milligrams per kilogram
তথ্যসূত্র (1)
Estimated Oceanic Abundance
The estimated element abundance in the earth's oceans.
2.2 milligrams per liter
তথ্যসূত্র (1)
Sources
Sources of this element.
Silicon is present in the sun and stars and is a principal component of a class of meteorites known as aerolites. It is also a component of tektites, a natural glass of uncertain origin.
Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, being exceeded only by oxygen. Silicon is not found free in nature, but occurs chiefly as the oxide and as silicates. Sand, quartz, rock crystal, amethyst, agate, flint, jasper, and opal are some of the forms in which the oxide appears. Granite, hornblende, asbestos, feldspar, clay, mica, etc. are but a few of the numerous silicate minerals.
Silicon is prepared commercially by heating silica and carbon in an electric furnace, using carbon electrodes. Several other methods can be used for preparing the element. Amorphous silicon can be prepared as a brown powder, which can be easily melted or vaporized. The Czochralski process is commonly used to produce single crystals of silicon used for solid-state or semiconductor devices. Hyperpure silicon can be prepared by the thermal decomposition of ultra-pure trichlorosilane in a hydrogen atmosphere, and by a vacuum float zone process.
তথ্যসূত্র (1)
- [6] Silicon https://periodic.lanl.gov/14.shtml
তথ্যসূত্র
(9)
Data deposited in or computed by PubChem
The half-life and atomic mass data was provided by the Atomic Mass Data Center at the International Atomic Energy Agency.
Element data are cited from the Atomic weights of the elements (an IUPAC Technical Report). The IUPAC periodic table of elements can be found at https://iupac.org/what-we-do/periodic-table-of-elements/. Additional information can be found within IUPAC publication doi:10.1515/pac-2015-0703 Copyright © 2020 International Union of Pure and Applied Chemistry.
The information are cited from Pure Appl. Chem. 2018; 90(12): 1833-2092, https://doi.org/10.1515/pac-2015-0703.
Thomas Jefferson National Accelerator Facility (Jefferson Lab) is one of 17 national laboratories funded by the U.S. Department of Energy. The lab's primary mission is to conduct basic research of the atom's nucleus using the lab's unique particle accelerator, known as the Continuous Electron Beam Accelerator Facility (CEBAF). For more information visit https://www.jlab.org/
The periodic table at the LANL (Los Alamos National Laboratory) contains basic element information together with the history, source, properties, use, handling and more. The provenance data may be found from the link under the source name.
The periodic table contains NIST's critically-evaluated data on atomic properties of the elements. The provenance data that include data for atomic spectroscopy, X-ray and gamma ray, radiation dosimetry, nuclear physics, and condensed matter physics may be found from the link under the source name. Ref: https://www.nist.gov/pml/atomic-spectra-database
This section provides all form of data related to element Silicon.
The element property data was retrieved from publications.