Silicon (Si)
metalloidSolid
Стандартна відносна атомна маса
28,085 u [28,084, 28,086]Електронна конфігурація
[Ne] 3s2 3p2Температура плавлення
1413,85 °CТемпература кипіння
3264,85 °CГустина
2329,6 kg/m³Ступені окиснення
−4, −3, −2, −1, 0, +1, +2, +3, +4Електронегативність (за Полінгом)
1,9Енергія йонізації (1-ша)
8,15168 eVРік відкриття
1824Атомний радіус
110 pmВідомості
Silicon is a hard, brittle metalloid in group 14. It is tetravalent in most compounds and forms strong bonds to oxygen, making silicates the dominant minerals of Earth’s crust. Elemental silicon is central to modern electronics because its oxide, silicon dioxide, can be grown as a stable insulating layer. In bulk chemistry it is less reactive than carbon at ordinary temperatures, but it dissolves or reacts under strongly alkaline, oxidizing, or high-temperature conditions.
Crystalline silicon has a metallic luster and grayish color. Silicon is a relatively inert element, but it is attacked by halogens and dilute alkali. Most acids, except hydrofluoric, do not affect it. Elemental silicon transmits more than 95% of all wavelengths of infrared, from 1.3 to 6.y micro-m.
The name derives from the Latin silex and silicis for "flint". Amorphous silicon was discovered by the Swedish chemist Jöns Jacob Berzelius in 1824. Crystalline silicon was first prepared by the French chemist Henri Sainte-Claire Deville in 1854.
Silicon was discovered by Jöns Jacob Berzelius, a Swedish chemist, in 1824 by heating chips of potassium in a silica container and then carefully washing away the residual by-products. Silicon is the seventh most abundant element in the universe and the second most abundant element in the earth's crust. Today, silicon is produced by heating sand (SiO2) with carbon to temperatures approaching 2200°C.
From the Latin. word silex, silicis, flint. In 1800, Davy thought silica to be a compound and not an element; but in 1811, Gay Lussac and Thenard probably prepared impure amorphous silicon by heating potassium with silicon tetrafluoride.
In 1824 Berzelius, generally credited with the discovery, prepared amorphous silicon by the same general method and purified the product by removing the fluosilicates by repeated washings. Deville in 1854 first prepared crystalline silicon, the second allotropic form of the element.
Pure crystalline silicon is a dark gray solid with a metallic luster and a diamond-cubic structure. It is brittle rather than malleable. Amorphous silicon is usually a brown to dark gray powder or thin film, with properties that depend strongly on preparation.
High-purity silicon is used for integrated circuits, power electronics, sensors, and photovoltaic cells. Lower-purity metallurgical silicon is used to make aluminum-silicon casting alloys, silicones, silanes, and silica-derived materials. Ferrosilicon is an important deoxidizer and alloying additive in steelmaking. Silicon carbide abrasives and refractories are often produced from silica and carbon, but their use depends on the compound rather than the free element.
Two allotropes of silicon exist at room temperature: amorphous and crystalline. Amorphous appears as a brown powder while crystalline silicon has a metallic luster and a grayish color. Single crystals of crystalline silicon can be grown with a process known as the Czochralski process. These crystals, when doped with elements such as boron, gallium, germanium, phosphorus or arsenic, are used in the manufacture of solid-state electronic devices, such as transistors, solar cells, rectifiers and microchips.
Silicon dioxide (SiO2), silicon's most common compound, is the most abundant compound in the earth's crust. It commonly takes the form of ordinary sand, but also exists as quartz, rock crystal, amethyst, agate, flint, jasper and opal. Silicon dioxide is extensively used in the manufacture of glass and bricks. Silica gel, a colloidal form of silicon dioxide, easily absorbs moisture and is used as a desiccant.
Silicon forms other useful compounds. Silicon carbide (SiC) is nearly as hard as diamond and is used as an abrasive. Sodium silicate (Na2SiO3), also known as water glass, is used in the production of soaps, adhesives and as an egg preservative. Silicon tetrachloride (SiCl4) is used to create smoke screens. Silicon is also an important ingredient in silicone, a class of material that is used for such things as lubricants, polishing agents, electrical insulators and medical implants.
Silicon is one of man's most useful elements. In the form of sand and clay it is used to make concrete and brick; it is a useful refractory material for high-temperature work, and in the form of silicates it is used in making enamels, pottery, etc. Silica, as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Glass can be made in a very great variety of shapes, and is used as containers, window glass, insulators, and thousands of other uses. Silicon tetrachloride can be used as iridize glass.
Hyperpure silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics and space-age industries.
Hydrogenated amorphous silicon has shown promise in producing economical cells for converting solar energy into electricity.
Silicon is important to plant and animal life. Diatoms in both fresh and salt water extract Silica from the water to build their cell walls. Silica is present in the ashes of plants and in the human skeleton. Silicon is an important ingredient in steel; silicon carbide is one of the most important abrasives and has been used in lasers to produce coherent light of 4560 A.
Silcones are important products of silicon. They may be prepared by hydrolyzing a silicon organic chloride, such as dimethyl silicon chloride. Hydrolysis and condensation of various substituted chlorosilanes can be used to produce a very great number of polymeric products, or silicones, ranging from liquids to hard, glasslike solids with many useful properties.
Isotopes in Earth/Planetary Science
Because molecules, atoms, and ions of the stable isotopes of silicon possess slightly different physical and chemical properties, they commonly will be fractionated during physical, chemical, and biological processes, giving rise to variations in isotopic abundances and in atomic weights. There are substantial variations in the isotopic abundances of silicon in natural terrestrial materials (Fig. IUPAC.14.1). These variations are useful in investigating the origin of substances and studying environmental, hydrological, and geological processes [13] M. W. Wieser, T. B. Coplen. Pure Appl Chem.83, 359 (2011)., [17] T. B. Coplen, J. A. Hopple, J. K. Böhlke, H. S. Peiser, S. E. Rieder, H. R. Krouse, K. J. R. Rosman, T. Ding, R. D. Vocke, K. Revesz, A. Lamberty, P. D. P. Taylor, P. D. Bièvre. United States Geological Survey Water-Resources Investigations Report, 01-4222, (2002).. Diatoms, a major group of algae, need silicon to build up their opaline shells and prefer 28Si while taking up Si(OH)4, which is the biologically available form of silicon in the marine environment. This progressively enriches surface waters with 29Si and 30Si [123] S. Kristiansen, T. Farbrot, L. J. Naustvoll. Limnol. Oceanogr.45, 472 (2000).. 32Si-labeled silicic acid of high specific radioactivity is used to measure uptake rates of Si and estimate marine sedimentation of biogenic (created by living organisms) silica (by diatoms and sea shells). By performing uptake kinetic experiments, the 32Si activity can be measured as 32P using counting of Cherenkov radiation (radiation produced by charged particles passing through a medium at a speed greater than that of light through the same medium — after Soviet physicist Pavel A. Cherenkov) with a liquid scintillation analyzer (measuring ionizing radiation using the interaction of radiation on a material and counting the resulting photon emissions).
Isotopes in Geochronology
Cosmogenic 32Si has a half-life of about 150 years and is produced by cosmic-ray spallation of argon in the stratosphere and troposphere [124] C. Schnabel, J. Beer, H. B. Clausen. Geophys. Res. Abstr.11, (2009).. 32Si in dust is precipitated in snow, making it possible to date dust in snow and glacial ice (Fig. IUPAC.14.2). Glaciers are archives for global climate history because they contain a variety of proxies (imprints of past environmental conditions used to interpret paleoclimate) for climate forcing and climate response. Cosmogenic 32Si that is stored in glaciers and ice-core samples can be analyzed using accelerator mass spectrometry to date when sections of glaciers formed [125] SAHRA – Sustainability of Semi-Arid Hydrology and Riparian Areas. Silicon, SAHRA – Sustainability of Semi-Arid Hydrology and Riparian Areas (2014), Feb. 24; http://web.sahra.arizona.edu/programs/isotopes/silicon.html., [126] GNS Science. Climate Change Studies & Ice Core Research, GNS Science (2014), Feb. 24; http://www.gns.cri.nz/Home/Services/Laboratories-Facilities/Tritium-and-Water-Dating-Laboratory/Research-Programmes/Climate-change-studies-ice-core-research..
Isotopes in Industry
At Keio University in Japan, the Itoh Research Group has developed a method that utilizes 29Si to store and process information. The Itoh Research Group focused on manipulating the nanostructure of materials at an atomic level, especially with semiconductors such as silicon. Their manipulations and observations demonstrate that differences in the nuclear spin and mass of an isotope affects the ease of further manipulation of the isotope [128] Kohei ITOH research group at Keio University, Japan. Itoh Group at Keio University, Japan, Kohei ITOH research group at Keio University, Japan (2014), Feb. 24; http://www.appi.keio.ac.jp/Itoh_group/research/., [129] T. Itahashi, H. Hayashi, M. R. Rahman, K. M. Itoh, L. S. Vlasenko, M. P. Vlasenko, D. S. Poloskin. Phys. Rev. B87, 075201-1 (2013)..
Silicon crystals enriched to higher than 99.99 percent purity of 28Si are being used in the Avogadro Project. This project is intended to remeasure the Avogadro constant (NA), which is the proportionality factor between the amount of substance and number of elementary entities [130] R. Marquardt, J. Meija, Z. Mester, M. Towns, R. Weir, R. Davis, J. Stohner. Pure Appl. Chem.90, 175 (2018)..
Silicon chemistry is dominated by the +4 oxidation state, although lower formal states occur in some silicides and specialized molecular compounds. Silicon dioxide, SiO₂, occurs as quartz and many other forms and is the basis of glass, ceramics, and semiconductor gate oxides. Silicates contain SiO₄ tetrahedra in isolated, chain, sheet, or framework arrangements. Silicon tetrachloride, SiCl₄, and trichlorosilane, HSiCl₃, are important intermediates for purified silicon and organosilicon chemistry. Silicones contain Si–O backbones with organic substituents.
See more information at the Silicon compound page.
Bulk crystalline silicon has low chemical toxicity, but fine silicon dust can irritate the eyes and respiratory tract and may pose dust-explosion risks in air. Inhalation hazards are more serious for respirable crystalline silica, SiO₂, which can cause silicosis; that risk belongs to the oxide, not elemental silicon. Silanes such as silane, SiH₄, can be pyrophoric or highly flammable. Semiconductor processing also involves corrosive and toxic reagents not inherent to silicon itself.
Miners, stonecutters, and others engaged in work where siliceous dust is breathed into large quantities often develop a serious lung disease known as silicosis.
Silicon is a major component of soils, rocks, clays, and natural waters, mostly as silicates and dissolved silicic acid, H₄SiO₄. Weathering releases soluble silicon, which rivers carry to lakes and oceans. Diatoms, radiolarians, and some plants use silica biomineralization, linking silicon to biological and sedimentary cycles. Elemental silicon is not persistent as a native environmental material under surface conditions.
Silicon is produced industrially by reducing quartz or other high-silica feedstocks with carbon in electric arc furnaces, yielding metallurgical-grade material. Semiconductor and solar uses require further purification and crystal growth or deposition, which are energy- and capital-intensive steps. Demand is split between large-volume alloy and chemical markets and smaller but very high-purity electronic markets. Recycling occurs in aluminum alloys and semiconductor manufacturing scrap, but end-of-life recovery from complex electronics is limited by dilution and contamination.
Silicon is present in the sun and stars and is a principal component of a class of meteorites known as aerolites. It is also a component of tektites, a natural glass of uncertain origin.
Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, being exceeded only by oxygen. Silicon is not found free in nature, but occurs chiefly as the oxide and as silicates. Sand, quartz, rock crystal, amethyst, agate, flint, jasper, and opal are some of the forms in which the oxide appears. Granite, hornblende, asbestos, feldspar, clay, mica, etc. are but a few of the numerous silicate minerals.
Silicon is prepared commercially by heating silica and carbon in an electric furnace, using carbon electrodes. Several other methods can be used for preparing the element. Amorphous silicon can be prepared as a brown powder, which can be easily melted or vaporized. The Czochralski process is commonly used to produce single crystals of silicon used for solid-state or semiconductor devices. Hyperpure silicon can be prepared by the thermal decomposition of ultra-pure trichlorosilane in a hydrogen atmosphere, and by a vacuum float zone process.
Silicon is among the more abundant heavy elements in the cosmos. It is formed in massive stars during advanced burning stages and is further redistributed by supernovae. In rocky planets and meteorites it is chiefly bound with oxygen and metals as silicate minerals. Spectral features of silicate dust are common in interstellar and circumstellar environments.
- The natural oxide on silicon is only a few nanometers thick but is chemically important.
- Ultra-pure silicon crystals can be grown with impurity levels far below one part per billion.
- Dopants such as boron or phosphorus control whether silicon behaves as p-type or n-type semiconductor material.
- Many common gemstones, including quartz varieties, are forms or mixtures dominated by SiO₂.
- Silicon expands on freezing, like water and a few other substances.
Зображення
Властивості
Фізичні
- Атомний радіус (емпіричний)
- 110 pm Порівняти Атомний радіус (емпіричний) усіх елементів →
- Ковалентний радіус
- 111 pm Порівняти Ковалентний радіус усіх елементів →
- Радіус ван дер Ваальса
- 210 pm Порівняти Радіус ван дер Ваальса усіх елементів →
- Металічний радіус
- 117 pm Порівняти Металічний радіус усіх елементів →
- Густина
- 2329,6 kg/m³ Порівняти Густина усіх елементів →
- Молярний об’єм
- 0,0121 L/mol
- Фаза за стандартних температури й тиску
- Твердий стан Порівняти Фаза за стандартних температури й тиску усіх елементів →
- Температура плавлення
- 1413,85 °C Порівняти Температура плавлення усіх елементів →
- Температура кипіння
- 3264,85 °C Порівняти Температура кипіння усіх елементів →
- Теплопровідність
- 149 Вт/(м·K) Порівняти Теплопровідність усіх елементів →
- Питома теплоємність
- 0,712 Дж/(г·K) Порівняти Питома теплоємність усіх елементів →
- Молярна теплоємність
- 19,99 Дж/(моль·K) Порівняти Молярна теплоємність усіх елементів →
- Кристалічна структура
- Кубічна алмазного типу Порівняти Кристалічна структура усіх елементів →
Хімічні
- Електронегативність (за Полінгом)
- 1,9 Порівняти Електронегативність (за Полінгом) усіх елементів →
- Електронегативність (за Алленом)
- 1,916
- Спорідненість до електрона
- 1,385 eV
- Енергія йонізації (1-ша)
- 8,15168 eV Порівняти Енергія йонізації (1-ша) усіх елементів →
- Енергія йонізації (2-га)
- 16,345906 eV Порівняти Енергія йонізації (2-га) усіх елементів →
- Енергія йонізації (3-тя)
- 33,493115 eV Порівняти Енергія йонізації (3-тя) усіх елементів →
- Енергія йонізації (4-та)
- 45,141945 eV Порівняти Енергія йонізації (4-та) усіх елементів →
- Енергія йонізації (5-та)
- 166,767574 eV Порівняти Енергія йонізації (5-та) усіх елементів →
- Ступені окиснення
- −4, −3, −2, −1, 0, +1, +2, +3, +4 Порівняти Ступені окиснення усіх елементів →
- Валентні електрони
- 4 Порівняти Валентні електрони усіх елементів →
- Електронна конфігурація
- [Ne] 3s2 3p2
Термодинамічні
- Теплота плавлення
- 0,52039177 eV Порівняти Теплота плавлення усіх елементів →
- Теплота випаровування
- 3,720786 eV Порівняти Теплота випаровування усіх елементів →
- Теплота сублімації
- 4,670778 eV
- Теплота атомізації
- 4,670778 eV
- Ентальпія атомізації
- 4,663937 eV
Ядерні
- Протони
- 14 Порівняти Протони усіх елементів →
- Нейтрони
- 14 Порівняти Нейтрони усіх елементів →
- Відомі ізотопи
- 24 Порівняти Відомі ізотопи усіх елементів →
- Стабільні ізотопи
- 3 Порівняти Стабільні ізотопи усіх елементів →
- Найстабільніший ізотоп
- Si-28
- Рік відкриття
- 1824
Поширеність
- Вміст (земна кора)
- 2,82e+5 мг/кг Порівняти Вміст (земна кора) усіх елементів →
- Вміст (океан)
- 2,2 мг/л Порівняти Вміст (океан) усіх елементів →
Кристалічна структура
- Стала ґратки a
- 543 pm
Електронна будова
- Електрони за оболонками
- 2, 8, 4 Порівняти Електрони за оболонками усіх елементів →
Ідентифікатори
- Номер CAS
- 7440-21-3 Порівняти Номер CAS усіх елементів →
- Символ терма
- 3P0
- InChI
- InChI=1S/Si
- Ключ InChI
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N
Електронна конфігурація Виміряно
Si: 3s² 3p²[Ne] 3s² 3p²1s² 2s² 2p⁶ 3s² 3p²Модель атома
Ізотопи відрізняються кількістю нейтронів, масою та стабільністю, але не електронною конфігурацією нейтрального атома.
Схематична модель атома, без дотримання масштабу.
Атомний відбиток
Спектр випромінювання / поглинання
Ізотопний розподіл
| Масове число | Атомна маса (u) | Природний вміст | Період напіврозпаду |
|---|---|---|---|
| 28 Стабільний | 27,97692653465 ± 0,00000000044 | 92,2230% | Стабільний |
| 29 Стабільний | 28,9764946649 ± 0,00000000052 | 4,6850% | Стабільний |
| 30 Стабільний | 29,973770136 ± 0,000000023 | 3,0920% | Стабільний |
Фаза / стан
Причина: на 1388,8 °C нижче температури плавлення (1413,85 °C)
Схематично, без дотримання масштабу
Точки фазових переходів
Енергії переходів
Енергія, необхідна для плавлення 1 моль за температури плавлення
Енергія, необхідна для випаровування 1 моль за температури кипіння
Енергія, необхідна для сублімації 1 моль за температури сублімації
Густина
За стандартних умов
За стандартних умов
Атомні спектри
Показано 10 з 14. Відсортовано за зарядом йона (за зростанням).
Наявні дані про лінії ?
| Йон | Заряд | Загальна кількість ліній | Імовірності переходів | Позначення рівнів |
|---|---|---|---|---|
| Si I | 0 | 754 | 639 | 640 |
| Si II | +1 | 590 | 474 | 474 |
| Si III | +2 | 1298 | 1288 | 1288 |
| Si IV | +3 | 332 | 314 | 314 |
| Si V | +4 | 151 | 143 | 143 |
| Si VI | +5 | 346 | 346 | 346 |
| Si VII | +6 | 233 | 233 | 233 |
| Si VIII | +7 | 269 | 269 | 269 |
| Si IX | +8 | 366 | 366 | 366 |
| Si X | +9 | 315 | 315 | 315 |
Наявні дані про рівні ?
| Йон | Заряд | Рівні |
|---|---|---|
| Si I | 0 | 542 |
| Si II | +1 | 151 |
| Si III | +2 | 189 |
| Si IV | +3 | 55 |
| Si V | +4 | 99 |
| Si VI | +5 | 72 |
| Si VII | +6 | 65 |
| Si VIII | +7 | 60 |
| Si IX | +8 | 67 |
| Si X | +9 | 55 |
Йонні радіуси
| Заряд | Координація | Спін | Радіус |
|---|---|---|---|
| +4 | 4 | Немає даних | 26 пм |
| +4 | 6 | Немає даних | 40 пм |
Сполуки
Ізотопи (3)
| Масове число | Атомна маса (u) | Природний вміст | Період напіврозпаду | Тип розпаду | |
|---|---|---|---|---|---|
| 28 Стабільний | 27,97692653465 ± 0,00000000044 | 92,2230% ± 0,0190% | Стабільний | stable | |
| 29 Стабільний | 28,9764946649 ± 0,00000000052 | 4,6850% ± 0,0080% | Стабільний | stable | |
| 30 Стабільний | 29,973770136 ± 0,000000023 | 3,0920% ± 0,0110% | Стабільний | stable |
Спектральні лінії
Показано 50 з 474. За замовчуванням показано лише спектральні лінії з виміряною інтенсивністю.
| Довжина хвилі (нм) | Інтенсивність | Ступінь йонізації | Тип | Перехід | Точність | Джерело | |
|---|---|---|---|---|---|---|---|
| 504.1024 нм | 1000 | Si II | emission | 3s2.4p 2P* → 3s2.4d 2D | Виміряно | NIST | |
| 505.5984 нм | 1000 | Si II | emission | 3s2.4p 2P* → 3s2.4d 2D | Виміряно | NIST | |
| 634.711 нм | 1000 | Si II | emission | 3s2.4s 2S → 3s2.4p 2P* | Виміряно | NIST | |
| 637.137 нм | 1000 | Si II | emission | 3s2.4s 2S → 3s2.4p 2P* | Виміряно | NIST | |
| 595.756 нм | 500 | Si II | emission | 3s2.4p 2P* → 3s2.5s 2S | Виміряно | NIST | |
| 597.893 нм | 500 | Si II | emission | 3s2.4p 2P* → 3s2.5s 2S | Виміряно | NIST | |
| 390.55231 нм | 300 | Si I | emission | 3s2.3p2 1S → 3s2.3p.4s 1P* | Виміряно | NIST | |
| 594.8541 нм | 200 | Si I | emission | 3s2.3p.4s 1P* → 3s2.3p.5p 1D | Виміряно | NIST | |
| 700.3569 нм | 180 | Si I | emission | 3s2.3p.4p 3D → 3s2.3p.6d 3F* | Виміряно | NIST | |
| 700.588 нм | 180 | Si I | emission | 3s2.3p.4p 3D → 3s2.3p.6d 3F* | Виміряно | NIST | |
| 570.84 нм | 160 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | Виміряно | NIST | |
| 462.1722 нм | 150 | Si II | emission | 3s2.4d 2D → 3s2.7f 2F* | Виміряно | NIST | |
| 568.4484 нм | 120 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3S | Виміряно | NIST | |
| 462.1418 нм | 100 | Si II | emission | 3s2.4d 2D → 3s2.7f 2F* | Виміряно | NIST | |
| 569.0425 нм | 100 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | Виміряно | NIST | |
| 579.7856 нм | 100 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3D | Виміряно | NIST | |
| 667.184 нм | 100 | Si II | emission | 3s.3p.(3P*).4s 4P* → 3s.3p.(3P*).4p 4D | Виміряно | NIST | |
| 672.1848 нм | 100 | Si I | emission | 3s2.3p.4p 1P → 3s2.3p.6d 1D* | Виміряно | NIST | |
| 564.5613 нм | 90 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | Виміряно | NIST | |
| 570.1104 нм | 90 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | Виміряно | NIST | |
| 579.3073 нм | 90 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3D | Виміряно | NIST | |
| 479.2324 нм | 80 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.(2P*<3/2>).6p<1/2> (3/2,1/2) | Виміряно | NIST | |
| 566.5555 нм | 80 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | Виміряно | NIST | |
| 697.651 нм | 80 | Si I | emission | 3s2.3p.4p 3D → 3s2.3p.6d 3F* | Виміряно | NIST | |
| 410.29359 нм | 70 | Si I | emission | 3s2.3p2 1S → 3s2.3p.4s 3P* | Виміряно | NIST | |
| 577.2146 нм | 70 | Si I | emission | 3s2.3p.4s 1P* → 3s2.3p.5p 1S | Виміряно | NIST | |
| 578.0384 нм | 70 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3D | Виміряно | NIST | |
| 719.355 нм | 65 | Si I | emission | 3s2.3p.4p 3P → 3s2.3p.6d 3D* | Виміряно | NIST | |
| 478.2991 нм | 50 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.(2P*<3/2>).6p<1/2> (3/2,1/2) | Виміряно | NIST | |
| 682.983 нм | 50 | Si II | emission | 3s2.5p 2P* → 3s2.6d 2D | Виміряно | NIST | |
| 575.4218 нм | 45 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3P | Виміряно | NIST | |
| 633.1956 нм | 45 | Si I | emission | 3s2.3p.4s 1P* → 3s2.3p.5p 1P | Виміряно | NIST | |
| 655.5463 нм | 45 | Si I | emission | 3s2.3p.4p 3D → 3s2.3p.7d 3F* | Виміряно | NIST | |
| 500.6059 нм | 40 | Si I | emission | 3s2.3p.4s 1P* → 3s2.3p.(2P*<3/2>).6p<3/2> (3/2,3/2) | Виміряно | NIST | |
| 479.2213 нм | 35 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.(2P*<1/2>).6p<1/2> (1/2,1/2) | Виміряно | NIST | |
| 380.6526 нм | 30 | Si III | emission | 3s.4p 3P* → 3s.4d 3D | Виміряно | NIST | |
| 455.2622 нм | 30 | Si III | emission | 3s.4s 3S → 3s.4p 3P* | Виміряно | NIST | |
| 494.7607 нм | 30 | Si I | emission | 3s2.3p.4s 1P* → 3s2.3p.(2P*<3/2>).6p<3/2> (3/2,3/2) | Виміряно | NIST | |
| 562.222 нм | 30 | Si I | emission | 3s2.3p.4s 3P* → 3s2.3p.5p 3S | Виміряно | NIST | |
| 681.841 нм | 30 | Si II | emission | 3s2.5p 2P* → 3s2.6d 2D | Виміряно | NIST | |
| 456.784 нм | 25 | Si III | emission | 3s.4s 3S → 3s.4p 3P* | Виміряно | NIST | |
| 392.4468 нм | 20 | Si III | emission | 3s.4f 1F* → 3s.5g 1G | Виміряно | NIST | |
| 457.4757 нм | 20 | Si III | emission | 3s.4s 3S → 3s.4p 3P* | Виміряно | NIST | |
| 573.973 нм | 20 | Si III | emission | 3s.4s 1S → 3s.4p 1P* | Виміряно | NIST | |
| 669.94 нм | 20 | Si II | emission | 3s.3p.(3P*).4s 4P* → 3s.3p.(3P*).4p 4D | Виміряно | NIST | |
| 482.895 нм | 18 | Si III | emission | 3s.4f 3F* → 3s.5g 3G | Виміряно | NIST | |
| 471.6654 нм | 16 | Si III | emission | 3s.4d 1D → 3s.5f 1F* | Виміряно | NIST | |
| 481.9712 нм | 16 | Si III | emission | 3s.4f 3F* → 3s.5g 3G | Виміряно | NIST | |
| 481.3333 нм | 15 | Si III | emission | 3s.4f 3F* → 3s.5g 3G | Виміряно | NIST | |
| 666.503 нм | 15 | Si II | emission | 3s.3p.(3P*).4s 4P* → 3s.3p.(3P*).4p 4D | Виміряно | NIST |
Розширені дані про властивості
Ковалентні радіуси (розширені дані)
- Ковалентний радіус (за Пююккьо)
- 116 pm
- Ковалентний радіус (за Пююккьо, подвійний зв’язок)
- 107 pm
- Ковалентний радіус (за Пююккьо, потрійний зв’язок)
- 102 pm
- Ковалентний радіус (за Бреггом)
- 117 pm
Радіуси ван дер Ваальса
- Bondi
- 210 pm
- Batsanov
- 210 pm
- Alvarez
- 219 pm
- UFF
- 429,5 pm
- MM3
- 229 pm
- Dreiding
- 427 pm
Атомні та металічні радіуси
- Атомний радіус (за Рамом)
- 232 pm
- Металічний радіус (C12)
- 138 pm
Шкали нумерації
- Mendeleev
- 88
- Pettifor
- 85
- Glawe
- 85
Шкали електронегативності
- Ghosh
- 0
- Miedema
- 5
- Gunnarsson–Lundqvist
- 5
- Robles–Bartolotti
- 4
Поляризовність і дисперсія
- Дипольна поляризовність
- 37,3 a.u.
- Дипольна поляризовність (невизначеність)
- 0,7 a.u.
- C₆
- 305 Ha·Bohr6
- C₆ (Gould–Bučko)
- 308 Ha·Bohr6
Хімічна спорідненість
- Спорідненість до протона
- 837 kJ/mol
- Газофазна основність
- 814,1 kJ/mol
Параметри Мідеми
- Молярний об’єм за Мідемою
- 8,6 cm3/mol
- Електронна густина за Мідемою
- 3
Фазові переходи та алотропні модифікації
| Температура плавлення | 1687,15 K |
| Температура кипіння | 3538,15 K |
Категорії ступенів окиснення
Розширені довідкові дані
Сталі екранування (5)
| n | Орбіталь | σ |
|---|---|---|
| 1 | s | 0,4255 |
| 2 | p | 4,055 |
| 2 | s | 4,98 |
| 3 | p | 9,7148 |
| 3 | s | 9,0968 |
Докладні дані про кристалічні радіуси (2)
| Заряд | CN | Спін | rcrystal (pm) | Походження |
|---|---|---|---|---|
| 4 | IV | 40 | ||
| 4 | VI | 54 | from r^3 vs V plots, |
Типи розпаду ізотопів (46)
| Ізотоп | Режим | Інтенсивність |
|---|---|---|
| 22 | B+ | 100% |
| 22 | B+p | 62% |
| 22 | 2p | 0,7% |
| 23 | B+ | 100% |
| 23 | B+p | 88% |
| 23 | 2p | 3,6% |
| 24 | B+ | 100% |
| 24 | B+p | 34,5% |
| 25 | B+ | 100% |
| 25 | B+p | 35% |
Фактори розсіяння рентгенівського випромінювання (756)
| Енергія (eV) | f₁ | f₂ |
|---|---|---|
| 10 | — | 3,94851 |
| 10,1617 | — | 3,95531 |
| 10,3261 | — | 3,96212 |
| 10,4931 | — | 3,96894 |
| 10,6628 | — | 3,97577 |
| 10,8353 | — | 3,98262 |
| 11,0105 | — | 3,98948 |
| 11,1886 | — | 3,99635 |
| 11,3696 | — | 4,00322 |
| 11,5535 | — | 4,01012 |
Додаткові дані
Estimated Crustal Abundance
The estimated element abundance in the earth's crust.
2.82×105 milligrams per kilogram
Джерела (1)
Estimated Oceanic Abundance
The estimated element abundance in the earth's oceans.
2.2 milligrams per liter
Джерела (1)
Sources
Sources of this element.
Silicon is present in the sun and stars and is a principal component of a class of meteorites known as aerolites. It is also a component of tektites, a natural glass of uncertain origin.
Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, being exceeded only by oxygen. Silicon is not found free in nature, but occurs chiefly as the oxide and as silicates. Sand, quartz, rock crystal, amethyst, agate, flint, jasper, and opal are some of the forms in which the oxide appears. Granite, hornblende, asbestos, feldspar, clay, mica, etc. are but a few of the numerous silicate minerals.
Silicon is prepared commercially by heating silica and carbon in an electric furnace, using carbon electrodes. Several other methods can be used for preparing the element. Amorphous silicon can be prepared as a brown powder, which can be easily melted or vaporized. The Czochralski process is commonly used to produce single crystals of silicon used for solid-state or semiconductor devices. Hyperpure silicon can be prepared by the thermal decomposition of ultra-pure trichlorosilane in a hydrogen atmosphere, and by a vacuum float zone process.
Джерела (1)
- [6] Silicon https://periodic.lanl.gov/14.shtml
Джерела
(9)
Data deposited in or computed by PubChem
The half-life and atomic mass data was provided by the Atomic Mass Data Center at the International Atomic Energy Agency.
Element data are cited from the Atomic weights of the elements (an IUPAC Technical Report). The IUPAC periodic table of elements can be found at https://iupac.org/what-we-do/periodic-table-of-elements/. Additional information can be found within IUPAC publication doi:10.1515/pac-2015-0703 Copyright © 2020 International Union of Pure and Applied Chemistry.
The information are cited from Pure Appl. Chem. 2018; 90(12): 1833-2092, https://doi.org/10.1515/pac-2015-0703.
Thomas Jefferson National Accelerator Facility (Jefferson Lab) is one of 17 national laboratories funded by the U.S. Department of Energy. The lab's primary mission is to conduct basic research of the atom's nucleus using the lab's unique particle accelerator, known as the Continuous Electron Beam Accelerator Facility (CEBAF). For more information visit https://www.jlab.org/
The periodic table at the LANL (Los Alamos National Laboratory) contains basic element information together with the history, source, properties, use, handling and more. The provenance data may be found from the link under the source name.
The periodic table contains NIST's critically-evaluated data on atomic properties of the elements. The provenance data that include data for atomic spectroscopy, X-ray and gamma ray, radiation dosimetry, nuclear physics, and condensed matter physics may be found from the link under the source name. Ref: https://www.nist.gov/pml/atomic-spectra-database
This section provides all form of data related to element Silicon.
The element property data was retrieved from publications.