Hafnium (Hf)
transition-metalSolid
ਮਿਆਰੀ ਪਰਮਾਣੂ ਭਾਰ
178.49 uਇਲੈਕਟ੍ਰਾਨ ਵਿਨਿਆਸ
[Xe] 6s2 4f14 5d2ਪਿਘਲਣ ਦਰਜਾ
2232.85 °Cਉਬਾਲ ਦਰਜਾ
4602.85 °Cਘਣਤਾ
1.33e+4 kg/m³ਆਕਸੀਕਰਨ ਅਵਸਥਾਵਾਂ
−2, 0, +1, +2, +3, +4ਬਿਜਲਈ ਰਿਣਾਤਮਕਤਾ (ਪਾਲਿੰਗ)
1.3ਆਇਨੀਕਰਨ ਊਰਜਾ (ਪਹਿਲੀ)
6.82507 eVਖੋਜ ਦਾ ਸਾਲ
1911ਪਰਮਾਣੂ ਅਰਧ-ਵਿਆਸ
155 pmਵੇਰਵੇ
Hafnium is a dense, corrosion-resistant transition metal in group 4, chemically close to zirconium. It occurs almost entirely with zirconium minerals and is difficult to separate because the two elements have similar ionic sizes and chemistry. A defining technological feature is its very large thermal-neutron absorption cross section, which contrasts with zirconium's low absorption and makes high-purity separation important for nuclear applications.
Hafnium is a ductile metal with a brilliant silver luster. Its properties are considerably influenced by presence of zirconium impurities. Of all the elements, zirconium and hafnium are two of the most difficult to separate. Although their chemistry is almost identical, the density of zirconium is about half of hafnium. Very pure hafnium has been produced, with zirconium being the major impurity.
Hafnium has been successfully alloyed with iron, titanium, niobium, tantalum, and other metals. Hafnium carbide is the most refractory binary composition known, and the nitride is the most refractory of all known metal nitrides (m.p. 3310C). At 700 degrees C hafnium rapidly absorbs hydrogen to form the composition HfH1.86.
Hafnium is resistant to concentrated alkalis, but at elevated temperatures reacts with oxygen, nitrogen, carbon, boron, sulfur, and silicon. Halogens react directly to form tetrahalides.
The name derives from the Latin hafnia for Copenhagen. An element named celtium was erroneously claimed to have been discovered in 1911 by the French chemist Georges Urbain in rare earth samples, until the Danish physicist Niels Bohr, predicted hafnium's properties using his theory of electronic configuration of the elements. Bohr argued that hafnium would not be a rare earth element, but would be found in zirconium ore. Hafnium was discovered by the Dutch physicist Dirk Coster and the Hungarian physicist George von Hevesy in 1923, while working at Bohr's Institute in Copenhagen.
Hafnium was discovered by Dirk Coster, a Danish chemist, and George Charles de Hevesy, a Hungarian chemist, in 1923. They used a method known as X-ray spectroscopy to study the arrangement of the outer electrons of atoms in samples of zirconium ore. The electron structure of hafnium had been predicted by Niels Bohr and Coster and Hevesy found a pattern that matched. Hafnium is difficult to separate from zirconium and is present in all of its ores. It is obtained with the same methods used to extract zirconium.
From Hafinia, the Latin name for Copenhagen. Many years before its discovery in 1923 (credited to D. Coster and G. von Hevesey), Hafnium was thought to be present in various minerals and concentrations. On the basis of the Bohr theory, the new element was expected to be associated with zirconium.
It was finally identified in zircon from Norway, by means of X-ray spectroscope analysis. It was named in honor of the city in which the discovery was made. Most zirconium minerals contain 1 to 5 percent hafnium.
It was originally separated from zirconium by repeated recrystallization of the double ammonium or potassium fluorides by von Hevesey and Jantzen. Metallic hafnium was first prepared by van Arkel and deBoer by passing the vapor of the tetraiodide over a heated tungsten filament. Almost all hafnium metal now produced is made by reducing the tetrachloride with magnesium or with sodium (Kroll Process).
Pure hafnium is a lustrous, silvery-gray metal. It is solid and ductile under ordinary conditions and develops a thin protective oxide film in air. Finely divided hafnium can be much more reactive than bulk metal.
Hafnium is used chiefly where neutron absorption or high-temperature stability is valuable. Metallic hafnium is used in control rods and other neutron-absorbing components in some nuclear reactors. Hafnium-containing superalloys and refractory alloys can improve high-temperature strength and oxidation resistance. Hafnium dioxide, HfO₂, is used as a high-k dielectric material in semiconductor devices, replacing or supplementing silicon dioxide in advanced gate stacks. Hafnium compounds also appear in specialty ceramics, optical coatings, and catalysts, but these uses are smaller than zirconium-related industrial chemistry.
Hafnium is a good absorber of neutrons and is used in the control rods of nuclear reactors. Hafnium is also used in vacuum tubes as a getter, a material that combines with and removes trace gases from vacuum tubes. Hafnium has been used as an alloying agent in iron, titanium, niobium and other metals.
Melting near 3890°C, hafnium carbide (HfC) has the highest melting point of any known two-element compound. Hafnium nitride (HfN) also has a high melting point, around 3305°C. Other hafnium compounds include: hafnium chloride (HfCl4), hafnium fluoride (HfF4) and hafnium oxide (HfO2).
Because the element not only has a good absorption cross section for thermal neutrons (almost 600 times that of zirconium), but also excellent mechanical properties and is extremely corrosion-resistant, hafnium is used for reactor control rods. Such rods are used in nuclear submarines.
Hafnium is used in gas-filled and incandescent lamps, and is an efficient getter for scavenging oxygen and nitrogen.
Isotopes in Geochronology
Some 176Hf is radiogenic as a result of it being formed as a product of beta decay of radioactive 176Lu (half-life of 3.73×1010 years) [301] G. Faure. Principles of Isotope Geology, 2nd Edition. p. 608. Wiley, New York (1986).. Thus, relations between the isotope-amount ratiosn(176Hf)/n(177Hf) and n(176Hf)/n(176Lu) have been used to determine the ages of minerals and rocks. Because of the long half-life of 176Lu, these ratios have been used in geochronology studies that document some of the oldest rocks in the Solar System and on Earth (Fig. IUPAC.72.1).
Hafnium isotopic compositions of terrestrial materials evolved differently depending on the relative rates of 176Hf production. Geologists can use calculated lutetium-hafnium ages and the initial isotope-amount ratio n(176Hf)/n(177Hf) along with other isotopic data from the oldest rocks in the Earth to infer that the Earth’s crust differentiated within the first few hundred million years after condensation of the oldest solid matter in the Solar System [502] E. Scherer, C. Münker, K. Mezger. Science293, 683 (2001)..
Radioactive 182Hf decays to 182W with a half-life of 8.9×106 years, which is much less than the age of meteorites and the Earth. Therefore, measurements of the amounts of hafnium and tungsten isotopes in meteorites and terrestrial samples reveal the earlier presence of 182Hf. As a result, this provides information about chemical differentiation and evolution of the early Solar System [503] T. Kleine, M. Touboul, B. Bourdon, F. Nimmo, K. Mezger, H. Palme, S. B. Jacobsen, Q. Z. Yin, A. N. Halliday. Geochim. Cosmochim. Acta73, 5150 (2009)., [504] A. Schersten. Re-Os, Pt-Os and Hf-W Isotopes and Tracing the Core in Mantle Melts, MantlePlumes.org (2014), Feb. 25; http://www.mantleplumes.org/Os-W.html..
Hafnium chemistry is dominated by the +4 oxidation state, reflecting the stable Hf⁴⁺ ion and strong bonding to oxygen, halides, and other hard donor atoms. Hafnium dioxide, HfO₂, is a refractory, chemically durable oxide with high dielectric constant. Hafnium tetrachloride, HfCl₄, is a volatile moisture-sensitive chloride used in purification and chemical vapor or atomic layer deposition chemistry. Organometallic and amide precursors such as tetrakis(dimethylamido)hafnium, Hf[N(CH₃)₂]₄, are important for thin-film deposition. Lower oxidation states exist but are less common and often require specialized conditions.
See more information at the Hafnium compound page.
Bulk hafnium metal is generally of low acute chemical toxicity, but metal dust or powder can ignite and should be treated as a combustible solid. Hafnium compounds vary in hazard; soluble salts, halides, and organometallic precursors may be corrosive, moisture-sensitive, or toxic by inhalation or skin contact. Hafnium is not naturally radioactive in ordinary material, but reactor-exposed hafnium may contain activation products that require radiological control.
Finely divided hafnium is pyrophoric and can ignite spontaneously in air. Care should be taken when machining the metal or when handling hot sponge hafnium.
Hafnium is a trace lithophile element and follows zirconium in igneous rocks, sands, and resistant minerals. It is commonly hosted in zircon, ZrSiO₄, where hafnium substitutes for zirconium. The element has low mobility in most surface environments because its oxides and silicate-hosted forms are sparingly soluble. It has no known biological role, and environmental concentrations are normally controlled by the distribution and weathering resistance of zirconium minerals.
Hafnium is not usually mined as a primary product. It is recovered during the processing of zirconium minerals, especially when nuclear-grade zirconium is purified to remove neutron-absorbing impurities. Separation from zirconium is the central cost and supply constraint, commonly involving solvent extraction or related chemical fractionation followed by conversion to metal or compounds. Demand is concentrated in nuclear control materials, semiconductor precursors, and specialized high-temperature alloys. Supply is therefore tied to zirconium processing capacity and to the need for very low-hafnium zirconium in reactor fuel cladding, rather than to abundant independent hafnium ores.
Obtained from mineral zircon or baddeleyite.
Hafnium is a heavy element made mainly by neutron-capture processes in earlier generations of stars, with contributions from both slow and rapid neutron capture. It is far less abundant cosmically than lighter rock-forming elements. In planetary materials it behaves as a refractory lithophile element, condensing into high-temperature solids and concentrating with zirconium-bearing minerals rather than in metallic cores or volatile phases.
- Hafnium was one of the last stable elements to be identified in nature.
- Its name comes from Hafnia, the Latin name for Copenhagen.
- Zircon can contain enough hafnium to make separation important even when hafnium is not the desired product.
- Hafnium and zirconium are chemically so similar that early analytical work often missed hafnium.
- Hafnium carbide and tantalum hafnium carbide are noted for extremely high melting behavior.
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- 0.178 eV
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- ਇਲੈਕਟ੍ਰਾਨ ਵਿਨਿਆਸ
- [Xe] 6s2 4f14 5d2
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- 1911
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ਕ੍ਰਿਸਟਲ ਬਣਤਰ
- ਜਾਲਕ ਸਥਿਰਾਂਕ a
- 320 pm
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- ਪ੍ਰਤੀ ਖੋਲ ਇਲੈਕਟ੍ਰਾਨ
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ਪਛਾਣਕਰਤਾ
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- ਟਰਮ ਪ੍ਰਤੀਕ
- 3F2
- InChI
- InChI=1S/Hf
- InChI ਕੁੰਜੀ
- VBJZVLUMGGDVMO-UHFFFAOYSA-N
ਇਲੈਕਟ੍ਰਾਨ ਵਿਨਿਆਸ ਮਾਪਿਆ
Hf: 4f¹⁴ 5d² 6s²[Xe] 4f¹⁴ 5d² 6s²1s² 2s² 2p⁶ 3s² 3p⁶ 3d¹⁰ 4s² 4p⁶ 4d¹⁰ 5s² 5p⁶ 4f¹⁴ 5d² 6s²ਪਰਮਾਣੂ ਮਾਡਲ
ਸਮਸਥਾਨਿਕ ਨਿਊਟ੍ਰਾਨਾਂ ਦੀ ਗਿਣਤੀ, ਪੁੰਜ ਅਤੇ ਸਥਿਰਤਾ ਬਦਲਦੇ ਹਨ — ਉਦਾਸੀਨ ਪਰਮਾਣੂ ਦਾ ਇਲੈਕਟ੍ਰਾਨ ਵਿਨਿਆਸ ਨਹੀਂ।
ਸੰਕੇਤਕ ਪਰਮਾਣੂ ਮਾਡਲ, ਪੈਮਾਨੇ ਅਨੁਸਾਰ ਨਹੀਂ।
ਪਰਮਾਣੂ ਪਛਾਣ-ਚਿੰਨ੍ਹ
ਨਿਕਾਸ / ਅਵਸ਼ੋਸ਼ਣ ਸਪੈਕਟ੍ਰਮ
ਸਮਸਥਾਨਿਕ ਵੰਡ
| ਪੁੰਜ ਸੰਖਿਆ | ਪਰਮਾਣੂ ਪੁੰਜ (u) | ਕੁਦਰਤੀ ਪ੍ਰਚੁਰਤਾ | ਅਰਧ-ਆਯੂ |
|---|---|---|---|
| 176 ਸਥਿਰ | 175.9414076 ± 0.0000022 | 5.2600% | ਸਥਿਰ |
| 178 ਸਥਿਰ | 177.9437058 ± 0.000002 | 27.2800% | ਸਥਿਰ |
| 179 ਸਥਿਰ | 178.9458232 ± 0.000002 | 13.6200% | ਸਥਿਰ |
| 180 ਸਥਿਰ | 179.946557 ± 0.000002 | 35.0800% | ਸਥਿਰ |
ਫੇਜ਼ / ਅਵਸਥਾ
ਕਾਰਨ: ਪਿਘਲਣ ਦਰਜੇ (2232.85 °C) ਤੋਂ 2207.8 °C ਘੱਟ
ਸੰਕੇਤਕ, ਪੈਮਾਨੇ ਅਨੁਸਾਰ ਨਹੀਂ
ਅਵਸਥਾ ਪਰਿਵਰਤਨ ਬਿੰਦੂ
ਸੰਕ੍ਰਮਣ ਊਰਜਾਵਾਂ
ਪਿਘਲਣ ਦਰਜੇ 'ਤੇ 1 mol ਨੂੰ ਪਿਘਲਾਉਣ ਲਈ ਲੋੜੀਂਦੀ ਊਰਜਾ
ਉਬਾਲ ਦਰਜੇ 'ਤੇ 1 mol ਦੇ ਵਾਸ਼ਪੀਕਰਨ ਲਈ ਲੋੜੀਂਦੀ ਊਰਜਾ
ਉਰਧਪਾਤਨ ਦਰਜੇ 'ਤੇ 1 mol ਦੇ ਉਰਧਪਾਤਨ ਲਈ ਲੋੜੀਂਦੀ ਊਰਜਾ
ਘਣਤਾ
ਮਿਆਰੀ ਹਾਲਤਾਂ 'ਤੇ
ਮਿਆਰੀ ਹਾਲਤਾਂ 'ਤੇ
ਪਰਮਾਣੂ ਸਪੈਕਟ੍ਰਮ
72 ਵਿੱਚੋਂ 10 ਦਿਖਾਏ ਜਾ ਰਹੇ ਹਨ। ਆਇਨ ਦੇ ਆਵੇਸ਼ ਅਨੁਸਾਰ ਕ੍ਰਮਬੱਧ (ਵਧਦੇ ਕ੍ਰਮ ਵਿੱਚ)।
ਉਪਲਬਧ ਸਪੈਕਟ੍ਰਮੀ ਰੇਖਾਵਾਂ ?
| ਆਇਨ | ਆਵੇਸ਼ | ਕੁੱਲ ਰੇਖਾਵਾਂ | ਸੰਕ੍ਰਮਣ ਸੰਭਾਵਨਾਵਾਂ | ਪੱਧਰਾਂ ਦੇ ਨਾਮਾਂਕਨ |
|---|---|---|---|---|
| Hf I | 0 | 5341 | 187 | 3821 |
| Hf II | +1 | 218 | 2 | 10 |
| Hf III | +2 | 37 | 0 | 0 |
| Hf IV | +3 | 27 | 0 | 0 |
| Hf V | +4 | 82 | 0 | 0 |
ਉਪਲਬਧ ਊਰਜਾ ਪੱਧਰ ?
| ਆਇਨ | ਆਵੇਸ਼ | ਪੱਧਰ |
|---|---|---|
| Hf I | 0 | 333 |
| Hf II | +1 | 125 |
| Hf III | +2 | 2 |
| Hf IV | +3 | 2 |
| Hf V | +4 | 2 |
| Hf VI | +5 | 2 |
| Hf VII | +6 | 2 |
| Hf VIII | +7 | 2 |
| Hf IX | +8 | 2 |
| Hf X | +9 | 2 |
ਆਇਨਿਕ ਅਰਧ-ਵਿਆਸ
| ਆਵੇਸ਼ | ਉਪਸਹਿ-ਸੰਯੋਜਨ | ਸਪਿਨ | ਅਰਧ-ਵਿਆਸ |
|---|---|---|---|
| +4 | 4 | ਉਪਲਬਧ ਨਹੀਂ | 57.99999999999999 pm |
| +4 | 6 | ਉਪਲਬਧ ਨਹੀਂ | 71 pm |
| +4 | 7 | ਉਪਲਬਧ ਨਹੀਂ | 76 pm |
| +4 | 8 | ਉਪਲਬਧ ਨਹੀਂ | 83 pm |
ਯੋਗਿਕ
ਸਮਸਥਾਨਿਕ (4)
| ਪੁੰਜ ਸੰਖਿਆ | ਪਰਮਾਣੂ ਪੁੰਜ (u) | ਕੁਦਰਤੀ ਪ੍ਰਚੁਰਤਾ | ਅਰਧ-ਆਯੂ | ਖ਼ੈ ਦੀ ਵਿਧੀ | |
|---|---|---|---|---|---|
| 176 ਸਥਿਰ | 175.9414076 ± 0.0000022 | 5.2600% ± 0.0700% | ਸਥਿਰ | stable | |
| 178 ਸਥਿਰ | 177.9437058 ± 0.000002 | 27.2800% ± 0.0700% | ਸਥਿਰ | stable | |
| 179 ਸਥਿਰ | 178.9458232 ± 0.000002 | 13.6200% ± 0.0200% | ਸਥਿਰ | stable | |
| 180 ਸਥਿਰ | 179.946557 ± 0.000002 | 35.0800% ± 0.1600% | ਸਥਿਰ | stable |
ਸਪੈਕਟ੍ਰਮੀ ਰੇਖਾਵਾਂ
1890 ਵਿੱਚੋਂ 50 ਦਿਖਾਏ ਜਾ ਰਹੇ ਹਨ। ਮੂਲ ਰੂਪ ਵਿੱਚ ਸਿਰਫ਼ ਮਾਪੀ ਹੋਈ ਤੀਬਰਤਾ ਵਾਲੀਆਂ ਸਪੈਕਟ੍ਰਮੀ ਰੇਖਾਵਾਂ ਦਿਖਾਈਆਂ ਜਾਂਦੀਆਂ ਹਨ।
| ਤਰੰਗ-ਲੰਬਾਈ (nm) | ਤੀਬਰਤਾ | ਆਇਨੀਕਰਨ ਪੜਾਅ | ਕਿਸਮ | ਸੰਕ੍ਰਮਣ | ਸ਼ੁੱਧਤਾ | ਸਰੋਤ | |
|---|---|---|---|---|---|---|---|
| 417.433998 nm | 48000 | Hf I | emission | 5d2.6s2 a 3F → 5d2.(a 3F).6s.(a 4F).6p z 5D* | ਮਾਪਿਆ | NIST | |
| 380.03629 nm | 36000 | Hf I | emission | 5d2.6s2 a 3F → 5d2.(a 3F).6s.(a 4F).6p z 5D* | ਮਾਪਿਆ | NIST | |
| 382.072307 nm | 34000 | Hf I | emission | 5d2.6s2 a 3F → 5d2.(a 3F).6s.(a 4F).6p y 3F* | ਮਾਪਿਆ | NIST | |
| 723.71003 nm | 34000 | Hf I | emission | 5d2.6s2 a 3F → 5d.6s2.(a 2D).6p z 3D* | ਮਾਪਿਆ | NIST | |
| 384.917811 nm | 32000 | Hf I | emission | 5d2.6s2 a 1D → 5d2.(a 3F).6s.(a 2F).6p y 1D* | ਮਾਪਿਆ | NIST | |
| 713.1807 nm | 32000 | Hf I | emission | 5d2.6s2 a 3F → 5d.6s2.(a 2D).6p z 3D* | ਮਾਪਿਆ | NIST | |
| 389.993003 nm | 29000 | Hf I | emission | 5d2.6s2 a 3F → 5d2.(a 3F).6s.(a 4F).6p z 5D* | ਮਾਪਿਆ | NIST | |
| 395.181289 nm | 26000 | Hf I | emission | 5d2.6s2 a 3F → 5d2.(a 3F).6s.(a 4F).6p y 3F* | ਮਾਪਿਆ | NIST | |
| 385.830632 nm | 25000 | Hf I | emission | 5d2.6s2 a 3F → 5d2.(a 3F).6s.(a 4F).6p y 3D* | ਮਾਪਿਆ | NIST | |
| 724.0873 nm | 21000 | Hf I | emission | 5d2.6s2 a 3F → 5d.6s2.(a 2D).6p z 3D* | ਮਾਪਿਆ | NIST | |
| 393.137246 nm | 19000 | Hf I | emission | 5d2.6s2 a 3F → 5d2.(a 3F).6s.(a 4F).6p y 3D* | ਮਾਪਿਆ | NIST | |
| 480.049829 nm | 17000 | Hf I | emission | 5d2.6s2 a 1D → 5d.6s2.(a 2D).6p z 1P* | ਮਾਪਿਆ | NIST | |
| 397.347912 nm | 15000 | Hf I | emission | 5d2.6s2 a 3F → 5d2.(a 3F).6s.(a 4F).6p z 5D* | ਮਾਪਿਆ | NIST | |
| 706.38474 nm | 15000 | Hf I | emission | 5d2.6s2 a 1D → 5d.6s2.(a 2D).6p z 3P* | ਮਾਪਿਆ | NIST | |
| 381.177553 nm | 14000 | Hf I | emission | 5d2.6s2 a 3F → 5d2.(a 3F).6s.(a 4F).6p z 3G* | ਮਾਪਿਆ | NIST | |
| 555.06011 nm | 14000 | Hf I | emission | 5d2.6s2 a 3F → 5d2.(a 3F).6s.(a 4F).6p z 5G* | ਮਾਪਿਆ | NIST | |
| 555.211884 nm | 14000 | Hf I | emission | 5d2.6s2 a 1D → 5d.6s2.(a 2D).6p z 1F* | ਮਾਪਿਆ | NIST | |
| 456.593715 nm | 13000 | Hf I | emission | 5d2.6s2 a 1D → 5d2.(a 3P).6s.(a 4P).6p y 5D* | ਮਾਪਿਆ | NIST | |
| 435.630591 nm | 12000 | Hf I | emission | 5d2.6s2 a 3F → 5d2.(a 3F).6s.(a 4F).6p z 5D* | ਮਾਪਿਆ | NIST | |
| 445.734411 nm | 12000 | Hf I | emission | 5d2.6s2 a 3F → 5d2.(a 3F).6s.(a 4F).6p z 5F* | ਮਾਪਿਆ | NIST | |
| 459.87979 nm | 12000 | Hf I | emission | 5d2.6s2 a 3F → 5d2.(a 3F).6s.(a 4F).6p z 5F* | ਮਾਪਿਆ | NIST | |
| 462.086529 nm | 12000 | Hf I | emission | 5d2.6s2 a 3F → 5d2.(a 3F).6s.(a 4F).6p z 5F* | ਮਾਪਿਆ | NIST | |
| 465.518924 nm | 12000 | Hf I | emission | 5d2.6s2 a 3P → 5d2.(a 3P).6s.(a 4P).6p z 3S* | ਮਾਪਿਆ | NIST | |
| 380.044548 nm | 11000 | Hf I | emission | 5d2.6s2 a 1D → 5d2.(a 3P).6s.(a 4P).6p z 5S* | ਮਾਪਿਆ | NIST | |
| 429.477692 nm | 11000 | Hf I | emission | 5d2.6s2 a 3F → 5d2.(a 3F).6s.(a 4F).6p z 5D* | ਮਾਪਿਆ | NIST | |
| 681.89395 nm | 11000 | Hf I | emission | 5d2.6s2 a 3P → 5d.6s2.(a 2D).6p z 1F* | ਮਾਪਿਆ | NIST | |
| 396.799621 nm | 10000 | Hf I | emission | 5d2.6s2 a 3F → 5d2.(a 3F).6s.(a 4F).6p z 5D* | ਮਾਪਿਆ | NIST | |
| 406.28356 nm | 10000 | Hf I | emission | 5d.6s2.(a 2D).6p z 1D* → 3512 | ਮਾਪਿਆ | NIST | |
| 497.525232 nm | 10000 | Hf I | emission | 5d2.6s2 a 3F → 5d2.(a 3F).6s.(a 4F).6p z 5F* | ਮਾਪਿਆ | NIST | |
| 454.093108 nm | 8400 | Hf I | emission | 5d2.6s2 a 1D → 5d2.(a 3F).6s.(a 4F).6p y 3F* | ਮਾਪਿਆ | NIST | |
| 443.80364 nm | 8300 | Hf I | emission | 5d2.6s2 a 3P → 5d2.(a 3P).6s.(a 4P).6p z 3S* | ਮਾਪਿਆ | NIST | |
| 446.117576 nm | 8300 | Hf I | emission | 5d2.6s2 a 1D → 5d2.(a 3P).6s.(a 4P).6p z 3S* | ਮਾਪਿਆ | NIST | |
| 459.891547 nm | 8300 | Hf I | emission | 5d2.6s2 a 3F → 5d2.(a 3F).6s.(a 4F).6p z 5D* | ਮਾਪਿਆ | NIST | |
| 408.33549 nm | 8000 | Hf I | emission | 5d.6s2.(a 2D).6p z 1D* → 3499 | ਮਾਪਿਆ | NIST | |
| 571.91718 nm | 7300 | Hf I | emission | 5d2.6s2 a 3P → 5d.6s2.(a 2D).6p z 1P* | ਮਾਪਿਆ | NIST | |
| 403.225898 nm | 7200 | Hf I | emission | 5d2.6s2 a 3F → 5d2.(a 3F).6s.(a 4F).6p y 3F* | ਮਾਪਿਆ | NIST | |
| 478.27405 nm | 7100 | Hf I | emission | 5d.6s2.(a 2D).6p z 3F* → 6p2.(3P).5d.(2D).6s c 3D | ਮਾਪਿਆ | NIST | |
| 383.001314 nm | 6700 | Hf I | emission | 5d3.(b 4F).6s a 5F → 5d2.(b 1D).6s.(b 2D).6p v 3F* | ਮਾਪਿਆ | NIST | |
| 504.743848 nm | 6500 | Hf I | emission | 5d2.6s2 a 3P → 5d2.(a 3F).6s.(a 4F).6p y 3D* | ਮਾਪਿਆ | NIST | |
| 485.92338 nm | 6400 | Hf I | emission | 5d.6s2.(a 2D).6p z 3F* → 3512 | ਮਾਪਿਆ | NIST | |
| 386.09058 nm | 6300 | Hf I | emission | 5d2.6s2 a 3P → 5d2.(a 3F).6s.(a 2F).6p y 1F* | ਮਾਪਿਆ | NIST | |
| 441.790242 nm | 6200 | Hf I | emission | 5d2.6s2 a 1D → 5d2.(a 3F).6s.(a 4F).6p y 3D* | ਮਾਪਿਆ | NIST | |
| 388.935622 nm | 5900 | Hf I | emission | 5d2.6s2 a 1D → 5d2.(a 3P).6s.(a 4P).6p y 5D* | ਮਾਪਿਆ | NIST | |
| 469.90048 nm | 5900 | Hf I | emission | 5d2.(a 3F).6s.(a 4F).6p z 5G* → 5d2.(3F).6s.(a 4F).7s b 5F | ਮਾਪਿਆ | NIST | |
| 678.92714 nm | 5900 | Hf I | emission | 5d2.6s2 a 3F → 5d2.(a 3F).6s.(a 4F).6p z 5G* | ਮਾਪਿਆ | NIST | |
| 433.027751 nm | 5800 | Hf I | emission | 5d2.6s2 a 3F → 5d2.(a 3F).6s.(a 4F).6p y 3F* | ਮਾਪਿਆ | NIST | |
| 410.65431 nm | 5600 | Hf I | emission | 5d2.6s2 a 1G → 5d2.(a 3F).6s.(a 2F).6p y 1F* | ਮਾਪਿਆ | NIST | |
| 426.34428 nm | 5400 | Hf I | emission | 5d2.6s2 a 3F → 5d2.(a 3F).6s.(a 4F).6p z 5F* | ਮਾਪਿਆ | NIST | |
| 477.37157 nm | 5400 | Hf I | emission | 5d2.6s2 a 3P → 5d.6s2.(a 2D).6p z 1P* | ਮਾਪਿਆ | NIST | |
| 590.29382 nm | 5400 | Hf I | emission | 5d2.6s2 a 3F → 5d2.(a 3F).6s.(a 4F).6p z 5G* | ਮਾਪਿਆ | NIST |
ਵਿਸਤ੍ਰਿਤ ਗੁਣ
ਸਹਿ-ਸੰਯੋਜਕ ਅਰਧ-ਵਿਆਸ (ਵਿਸਤ੍ਰਿਤ)
- ਸਹਿ-ਸੰਯੋਜਕ ਅਰਧ-ਵਿਆਸ (ਪਿਊਕੋ)
- 152 pm
- ਸਹਿ-ਸੰਯੋਜਕ ਅਰਧ-ਵਿਆਸ (ਪਿਊਕੋ, ਦੋਹਰਾ ਬੰਧਨ)
- 128 pm
- ਸਹਿ-ਸੰਯੋਜਕ ਅਰਧ-ਵਿਆਸ (ਪਿਊਕੋ, ਤਿਹਰਾ ਬੰਧਨ)
- 122 pm
ਵਾਨ ਡਰ ਵਾਲਜ਼ ਅਰਧ-ਵਿਆਸ
- Batsanov
- 225 pm
- Alvarez
- 263 pm
- UFF
- 314.1 pm
- MM3
- 253 pm
ਪਰਮਾਣੂ ਅਤੇ ਧਾਤਵੀ ਅਰਧ-ਵਿਆਸ
- ਪਰਮਾਣੂ ਅਰਧ-ਵਿਆਸ (ਰਾਮ)
- 264 pm
- ਧਾਤਵੀ ਅਰਧ-ਵਿਆਸ (C12)
- 159 pm
ਅੰਕਨ ਪੈਮਾਨੇ
- Mendeleev
- 45
- Pettifor
- 50
- Glawe
- 50
ਬਿਜਲਈ ਰਿਣਾਤਮਕਤਾ ਦੇ ਪੈਮਾਨੇ
- Ghosh
- 0
- Miedema
- 4
- Gunnarsson–Lundqvist
- 5
- Robles–Bartolotti
- 4
ਧਰੁਵੀਕਰਨਯੋਗਤਾ ਅਤੇ ਪ੍ਰਕੀਰਣ
- ਦੋਧਰੁਵੀ ਧਰੁਵੀਕਰਨਯੋਗਤਾ
- 103 a.u.
- ਦੋਧਰੁਵੀ ਧਰੁਵੀਕਰਨਯੋਗਤਾ (ਅਨਿਸ਼ਚਿਤਤਾ)
- 6 a.u.
- C₆ (Gould–Bučko)
- 1040 Ha·Bohr6
ਮੀਡੇਮਾ ਪਰਾਮੀਟਰ
- ਮੀਡੇਮਾ ਮੋਲਰ ਆਇਤਨ
- 13.45 cm3/mol
- ਮੀਡੇਮਾ ਇਲੈਕਟ੍ਰਾਨ ਘਣਤਾ
- 3
ਅਵਸਥਾ ਪਰਿਵਰਤਨ ਅਤੇ ਅਪਰਰੂਪ
| ਪਿਘਲਣ ਦਰਜਾ | 2506.15 K |
| ਉਬਾਲ ਦਰਜਾ | 4873.15 K |
ਆਕਸੀਕਰਨ ਅਵਸਥਾ ਦੀਆਂ ਸ਼੍ਰੇਣੀਆਂ
ਉੱਨਤ ਸੰਦਰਭ ਡਾਟਾ
ਪਰਿਰੱਖਣ ਸਥਿਰਾਂਕ (14)
| n | ਔਰਬਿਟਲ | σ |
|---|---|---|
| 1 | s | 1.3984 |
| 2 | p | 4.4012 |
| 2 | s | 18.8102 |
| 3 | d | 13.5702 |
| 3 | p | 21.0168 |
| 3 | s | 21.6885 |
| 4 | d | 36.476 |
| 4 | f | 39.7904 |
| 4 | p | 34.0704 |
| 4 | s | 33.0228 |
ਕ੍ਰਿਸਟਲ ਅਰਧ-ਵਿਆਸਾਂ ਦਾ ਵੇਰਵਾ (4)
| ਆਵੇਸ਼ | CN | ਸਪਿਨ | rcrystal (pm) | ਉਤਪੱਤੀ |
|---|---|---|---|---|
| 4 | IV | 72 | from r^3 vs V plots, | |
| 4 | VI | 85 | from r^3 vs V plots, | |
| 4 | VII | 90 | ||
| 4 | VIII | 97 |
ਸਮਸਥਾਨਿਕ ਖ਼ੈ ਦੀਆਂ ਵਿਧੀਆਂ (46)
| ਸਮਸਥਾਨਿਕ | ਮੋਡ | ਤੀਬਰਤਾ |
|---|---|---|
| 153 | B+ | — |
| 154 | B+ | 100% |
| 154 | A | 0% |
| 155 | B+ | 100% |
| 155 | A | — |
| 156 | A | 100% |
| 156 | B+ | — |
| 157 | A | 94% |
| 157 | B+ | 14% |
| 158 | B+ | 55.7% |
ਐਕਸ-ਰੇ ਖਿੰਡਾਅ ਗੁਣਾਂਕ (514)
| ਊਰਜਾ (eV) | f₁ | f₂ |
|---|---|---|
| 10 | — | 2.62338 |
| 10.1617 | — | 2.71485 |
| 10.3261 | — | 2.80951 |
| 10.4931 | — | 2.90326 |
| 10.6628 | — | 2.98247 |
| 10.8353 | — | 3.06384 |
| 11.0106 | — | 3.14744 |
| 11.1886 | — | 3.21346 |
| 11.3696 | — | 3.27509 |
| 11.5535 | — | 3.33789 |
ਵਾਧੂ ਡਾਟਾ
Estimated Crustal Abundance
The estimated element abundance in the earth's crust.
3.0 milligrams per kilogram
ਸੰਦਰਭ (1)
Estimated Oceanic Abundance
The estimated element abundance in the earth's oceans.
7×10-6 milligrams per liter
ਸੰਦਰਭ (1)
ਸੰਦਰਭ
(9)
Data deposited in or computed by PubChem
The half-life and atomic mass data was provided by the Atomic Mass Data Center at the International Atomic Energy Agency.
Element data are cited from the Atomic weights of the elements (an IUPAC Technical Report). The IUPAC periodic table of elements can be found at https://iupac.org/what-we-do/periodic-table-of-elements/. Additional information can be found within IUPAC publication doi:10.1515/pac-2015-0703 Copyright © 2020 International Union of Pure and Applied Chemistry.
The information are cited from Pure Appl. Chem. 2018; 90(12): 1833-2092, https://doi.org/10.1515/pac-2015-0703.
Thomas Jefferson National Accelerator Facility (Jefferson Lab) is one of 17 national laboratories funded by the U.S. Department of Energy. The lab's primary mission is to conduct basic research of the atom's nucleus using the lab's unique particle accelerator, known as the Continuous Electron Beam Accelerator Facility (CEBAF). For more information visit https://www.jlab.org/
The periodic table at the LANL (Los Alamos National Laboratory) contains basic element information together with the history, source, properties, use, handling and more. The provenance data may be found from the link under the source name.
The periodic table contains NIST's critically-evaluated data on atomic properties of the elements. The provenance data that include data for atomic spectroscopy, X-ray and gamma ray, radiation dosimetry, nuclear physics, and condensed matter physics may be found from the link under the source name. Ref: https://www.nist.gov/pml/atomic-spectra-database
This section provides all form of data related to element Hafnium.
The element property data was retrieved from publications.