Indium (In)
post-transition-metalSolid
प्रमाणित अणुभार
114.818 uइलेक्ट्रॉन संरूपण
[Kr] 5s2 4d10 5p1द्रवणांक
156.6 °Cउत्कलनांक
2071.85 °Cघनता
7310 kg/m³ऑक्सिडीकरण अवस्था
−5, −2, −1, 0, +1, +2, +3विद्युतऋणता (पॉलिंग)
1.78आयनीकरण ऊर्जा (पहिली)
5.786356 eVशोधाचे वर्ष
1863अणुत्रिज्या
155 pmतपशील
Indium is a soft, silvery post-transition metal in group 13. It is chemically related to gallium and thallium, but its stable chemistry is dominated by the +3 oxidation state, with +1 compounds also known. The element is rare in Earth's crust and is obtained chiefly as a by-product of zinc refining. Its technological importance is disproportionate to its abundance, especially because transparent conducting indium tin oxide is central to flat-panel displays, touch screens, and other optoelectronic devices.
Indium is available in ultra pure form. Indium is a very soft, silvery-white metal with a brilliant luster. The pure metal gives a high-pitched "cry" when bent. It wets glass, as does gallium.
The name derives from the term "indigo" for the indigo-blue line in the element's spark spectrum. It was discovered in 1863 by the German physicist Ferdinand Reich and the German metallurgist Hieronymus Theodor Richter, while examining zinc blende. They isolated indium in 1867.
Indium was discovered by the German chemists Ferdinand Reich and Hieronymus Theodor Richter in 1863. Reich and Richter had been looking for traces of the element thallium in samples of zinc ores. A brilliant indigo line in the sample's spectrum revealed the existence of indium. Indium is about as abundant as silver but is much easier to recover since it typically occurs along with zinc, iron, lead and copper ores.
From the brilliant indigo line in its spectrum. Discovered by Reich and Richter, who later isolated the metal. Until 1924, a gram or so constituted the world's supply of this element in isolated form. It is probably about as abundant as silver. About 4 million troy ounces of indium are now produced annually in the Free World. Canada is presently producing more than 1,000,000 troy ounces annually.
Pure indium is a very soft, lustrous, silvery-white metal at ordinary conditions. It can be cut with a knife, leaves a mark on paper, and emits a characteristic high-pitched “cry” when bent as its crystals deform. It melts at a relatively low temperature for a metal, about 157 °C.
The largest use of indium is in indium tin oxide, a transparent and electrically conducting oxide coating used on displays, touch panels, solar cells, and low-emissivity glass. Indium metal and indium-rich alloys are used in low-melting solders, fusible alloys, thermal interface materials, and seals that wet glass or ceramics. Indium is also used in compound semiconductors such as indium phosphide and indium gallium arsenide for high-speed electronics, lasers, photodetectors, and some photovoltaic cells.
Indium is used to coat the bearings of high speed motors since it allows for the even distribution of lubricating oil. Indium is used to dope germanium to make transistors. It is also used to make other electrical components such as rectifiers, thermistors and photoconductors. Indium can be used to make mirrors that are as reflective as silver mirrors but do not tarnish as quickly. Indium is also used to make low melting alloys. An alloy of 24% indium and 76% gallium is a liquid at room temperature.
It has found application in making low-melting allows; an allow of 24% indium - 76% gallium is liquid at room temperature. It is used in making bearing alloys, germanium transistors, rectifiers, thermistors, and photoconductors. It can be plated onto metal and evaporated onto glass, forming a mirror as good as that made with silver but with more resistance to atmospheric corrosion.
Isotopes in Medicine
111In (with a half-life of 2.8 days) is used in indium leukocyte imaging (Fig. IUPAC.49.1), in which white blood cells that are abundant at sites of infection are labeled with 111In to help locate the source of the infection [361] M. T. Syrjälä, V. Valtonen, K. Liewendahl, G. Myllylä. J. Nucl. Med.28, 155 (1987)., [362] M. D. Cerqueira, A. F. Jacobson. J. Nucl. Med.30, 703 (1989)., [363] C. Love, C. J. Palestro. J. Nucl. Med.Technol.32, 47 (2004)..
Isotopes Used as a Source of Radioactive Isotope(s)
113In is used to produce 113Sn (with a half-life of 115 days) via the reaction 113In (p, n) 113Sn, and 113In is used to produce the radioisotope 110In (with a half-life of 1.15 h) [364] F. E. Fakhari. Separation and Purification of 111In from Irradiated Cadmium Targets by Solid Phase Extraction (SPE) Method for Medical Applications, Deutsche National Bibliothek (2014), Feb. 26; http://archiv.ub.uni-marburg.de/diss/z2006/0132/view.html., [365] M. Mostafa, A. A. El Sadek, H. El Said, M. A. El Amir. J. Nucl. Radiochem. Sci.10, 1 (2009)..
Indium most often forms In³⁺ compounds, although In⁺ chemistry is significant and can be stabilized in some solids and salts. Indium(III) oxide, In₂O₃, is a wide-band-gap oxide and the main component of indium tin oxide. Indium(III) chloride, InCl₃, is a common Lewis-acidic reagent and precursor. Indium phosphide, InP, and indium arsenide, InAs, are important III-V semiconductors. Indium forms many alloys and intermetallic compounds, and its organometallic chemistry includes precursors used in vapor deposition.
See more information at the Indium compound page.
Bulk indium metal has low acute toxicity, but fine dusts, fumes, and soluble indium compounds require control in industrial settings. Inhalation exposure to indium tin oxide and some indium compounds has been associated with serious lung disease in workers. Many semiconductor compounds containing indium also contain toxic partners such as arsenic or phosphide-forming materials, so hazards are not due to indium alone. Natural indium has no significant radiological hazard.
There is evidence that indium has a low order of toxicity; however, care should be taken until further information is available.
Indium occurs mainly as a trace constituent in sulfide ores, especially zinc ores such as sphalerite, rather than as abundant indium minerals. During weathering and processing it tends to follow chalcophile pathways and can be retained in sulfide-rich residues or industrial wastes. Environmental concentrations are usually very low, and indium has no known biological role. Releases are most relevant near mining, smelting, refining, and electronic-material manufacturing sites.
Indium is not mined as a primary metal in most operations. It is recovered chiefly from residues and intermediate streams produced during zinc smelting and refining, with smaller contributions from other base-metal processing. Supply therefore depends strongly on ore composition, recovery technology, and the economics of host metals. Demand is led by transparent conducting oxides and specialized semiconductors, while solders and alloys account for smaller but useful markets. Recycling occurs from manufacturing scrap and some end-of-life products, but dispersed thin-film uses make complete recovery difficult. Substitution is possible in some applications, yet often involves trade-offs in conductivity, transparency, processing, or reliability.
Indium is most frequently associated with zinc materials, and it is from these that most commercial indium is now obtained; however, it is also found in iron, lead, and copper ores.
Indium is a relatively scarce element in the cosmos. Its stable isotopes are produced by neutron-capture processes in earlier generations of stars, with contributions from both slow and rapid neutron-capture nucleosynthesis. In planetary materials it is strongly chalcophile and is concentrated more readily in sulfide phases than in silicates, helping explain its association with zinc, lead, and tin ores on Earth.
- Natural indium is dominated by ¹¹⁵In, which is very weakly radioactive but has an extremely long half-life.
- Indium metal can form cold-welded seals because it remains soft and malleable at low temperatures.
- The element was named from the indigo-blue spectral line used in its discovery.
- Indium tin oxide is useful because it combines optical transparency with electrical conductivity.
- Indium wets glass better than many common metals, making it useful in special seals.
प्रतिमा
गुणधर्म
भौतिक
- अणुत्रिज्या (अनुभवाधारित)
- 155 pm सर्व घटकांच्या अणुत्रिज्या (अनुभवाधारित) ची तुलना करा →
- सहसंयुजी त्रिज्या
- 142 pm सर्व घटकांच्या सहसंयुजी त्रिज्या ची तुलना करा →
- व्हॅन डर वाल्स त्रिज्या
- 193 pm सर्व घटकांच्या व्हॅन डर वाल्स त्रिज्या ची तुलना करा →
- धात्विक त्रिज्या
- 142 pm सर्व घटकांच्या धात्विक त्रिज्या ची तुलना करा →
- घनता
- 7310 kg/m³ सर्व घटकांच्या घनता ची तुलना करा →
- मोलर आयतन
- 0.0157 L/mol
- STP येथे अवस्था
- घन सर्व घटकांच्या STP येथे अवस्था ची तुलना करा →
- द्रवणांक
- 156.6 °C सर्व घटकांच्या द्रवणांक ची तुलना करा →
- उत्कलनांक
- 2071.85 °C सर्व घटकांच्या उत्कलनांक ची तुलना करा →
- उष्णता चालकता
- 81.8 W/(m·K) सर्व घटकांच्या उष्णता चालकता ची तुलना करा →
- विशिष्ट उष्माधारकता
- 0.233 J/(g·K) सर्व घटकांच्या विशिष्ट उष्माधारकता ची तुलना करा →
- मोलर उष्माधारकता
- 26.74 J/(mol·K) सर्व घटकांच्या मोलर उष्माधारकता ची तुलना करा →
- स्फटिक संरचना
- चतुष्कोणी सर्व घटकांच्या स्फटिक संरचना ची तुलना करा →
रासायनिक
- विद्युतऋणता (पॉलिंग)
- 1.78 सर्व घटकांच्या विद्युतऋणता (पॉलिंग) ची तुलना करा →
- विद्युतऋणता (ॲलन)
- 1.656
- इलेक्ट्रॉन आसक्ती
- 0.3 eV
- आयनीकरण ऊर्जा (पहिली)
- 5.786356 eV सर्व घटकांच्या आयनीकरण ऊर्जा (पहिली) ची तुलना करा →
- आयनीकरण ऊर्जा (दुसरी)
- 18.870475 eV सर्व घटकांच्या आयनीकरण ऊर्जा (दुसरी) ची तुलना करा →
- आयनीकरण ऊर्जा (तिसरी)
- 28.044247 eV सर्व घटकांच्या आयनीकरण ऊर्जा (तिसरी) ची तुलना करा →
- आयनीकरण ऊर्जा (चौथी)
- 55.450191 eV सर्व घटकांच्या आयनीकरण ऊर्जा (चौथी) ची तुलना करा →
- आयनीकरण ऊर्जा (पाचवी)
- 69.300239 eV सर्व घटकांच्या आयनीकरण ऊर्जा (पाचवी) ची तुलना करा →
- ऑक्सिडीकरण अवस्था
- −5, −2, −1, 0, +1, +2, +3 सर्व घटकांच्या ऑक्सिडीकरण अवस्था ची तुलना करा →
- संयुजा इलेक्ट्रॉन
- 3 सर्व घटकांच्या संयुजा इलेक्ट्रॉन ची तुलना करा →
- इलेक्ट्रॉन संरूपण
- [Kr] 5s2 4d10 5p1
उष्मागतिक
- त्रिक बिंदू (तापमान)
- 156.5936 °C
- द्रवण उष्मा
- 0.03378764 eV सर्व घटकांच्या द्रवण उष्मा ची तुलना करा →
- बाष्पीभवन उष्मा
- 2.402446 eV सर्व घटकांच्या बाष्पीभवन उष्मा ची तुलना करा →
- संप्लवन उष्मा
- 2.518526 eV
- अणूकरण उष्मा
- 2.518526 eV
- अणूकरण एन्थाल्पी
- 2.518526 eV
केंद्रकीय
- प्रोटॉन
- 49 सर्व घटकांच्या प्रोटॉन ची तुलना करा →
- न्यूट्रॉन
- 64 सर्व घटकांच्या न्यूट्रॉन ची तुलना करा →
- ज्ञात समस्थानिके
- 42 सर्व घटकांच्या ज्ञात समस्थानिके ची तुलना करा →
- स्थिर समस्थानिके
- 1 सर्व घटकांच्या स्थिर समस्थानिके ची तुलना करा →
- सर्वाधिक स्थिर समस्थानिक
- In-113
- शोधाचे वर्ष
- 1863
विपुलता
- विपुलता (पृथ्वीचे कवच)
- 0.25 mg/kg सर्व घटकांच्या विपुलता (पृथ्वीचे कवच) ची तुलना करा →
- विपुलता (महासागर)
- 0.02 mg/L सर्व घटकांच्या विपुलता (महासागर) ची तुलना करा →
स्फटिक संरचना
- जालक स्थिरांक a
- 459 pm
इलेक्ट्रॉन संरचना
- प्रत्येक कवचातील इलेक्ट्रॉन
- 2, 8, 18, 18, 3 सर्व घटकांच्या प्रत्येक कवचातील इलेक्ट्रॉन ची तुलना करा →
ओळखचिन्हे
- CAS क्रमांक
- 7440-74-6 सर्व घटकांच्या CAS क्रमांक ची तुलना करा →
- टर्म चिन्ह
- 2P°1/2
- InChI
- InChI=1S/In
- InChI की
- APFVFJFRJDLVQX-UHFFFAOYSA-N
इलेक्ट्रॉन संरूपण मोजलेले
In: 4d¹⁰ 5s² 5p¹[Kr] 4d¹⁰ 5s² 5p¹1s² 2s² 2p⁶ 3s² 3p⁶ 3d¹⁰ 4s² 4p⁶ 4d¹⁰ 5s² 5p¹अणुप्रतिमान
समस्थानिकांमुळे न्यूट्रॉन संख्या, वस्तुमान आणि स्थैर्य बदलते — विद्युतदृष्ट्या उदासीन अणूचे इलेक्ट्रॉन संरूपण बदलत नाही.
योजनात्मक अणुप्रतिमान, प्रमाणानुसार नाही.
अणूची विशिष्ट ओळख
उत्सर्जन / शोषण वर्णपट
समस्थानिक वितरण
| वस्तुमानांक | अणुवस्तुमान (u) | नैसर्गिक विपुलता | अर्धायुष्य |
|---|---|---|---|
| 113 स्थिर | ११२.९०४०६१८४ ± ०.००००००९१ | 4.2900% | स्थिर |
अवस्था / स्थिती
कारण: द्रवणांकापेक्षा (156.6 °C) 131.6 °C कमी
योजनात्मक, प्रमाणानुसार नाही
अवस्थांतर बिंदू
अवस्थांतर ऊर्जा
द्रवणांकावर 1 mol वितळवण्यासाठी आवश्यक ऊर्जा
उत्कलनांकावर 1 mol चे बाष्पीभवन करण्यासाठी आवश्यक ऊर्जा
संप्लवनांकावर 1 mol चे संप्लवन करण्यासाठी आवश्यक ऊर्जा
घनता
प्रमाणित परिस्थितीत
प्रमाणित परिस्थितीत
प्रगत
अणुवर्णपट
49 पैकी 10 दाखवले आहेत. आयनाच्या विद्युतभारानुसार चढत्या क्रमाने मांडलेले.
वर्णरेषांचा संग्रह ?
| आयन | विद्युतभार | एकूण वर्णरेषा | संक्रमण संभाव्यता | पातळ्यांची नामांकने |
|---|---|---|---|---|
| In I | 0 | 92 | 27 | 91 |
| In II | +1 | 899 | 528 | 899 |
| In III | +2 | 55 | 0 | 0 |
| In IV | +3 | 42 | 0 | 0 |
| In V | +4 | 38 | 0 | 0 |
ऊर्जा पातळ्यांचा संग्रह ?
| आयन | विद्युतभार | पातळ्या |
|---|---|---|
| In I | 0 | 114 |
| In II | +1 | 195 |
| In III | +2 | 28 |
| In IV | +3 | 18 |
| In V | +4 | 42 |
| In VI | +5 | 2 |
| In VII | +6 | 2 |
| In VIII | +7 | 2 |
| In IX | +8 | 2 |
| In X | +9 | 2 |
स्फटिक संरचनेची माहिती उपलब्ध नाही
स्फटिक संरचना: tetragonal
आयनिक त्रिज्या
| विद्युतभार | समन्वय | प्रचक्रण | त्रिज्या |
|---|---|---|---|
| +3 | 4 | उपलब्ध नाही | 62 pm |
| +3 | 6 | उपलब्ध नाही | 80 pm |
| +3 | 8 | उपलब्ध नाही | 92 pm |
संयुगे
समस्थानिके (1)
| वस्तुमानांक | अणुवस्तुमान (u) | नैसर्गिक विपुलता | अर्धायुष्य | क्षय प्रकार | |
|---|---|---|---|---|---|
| 113 स्थिर | ११२.९०४०६१८४ ± ०.००००००९१ | 4.2900% ± 0.0500% | स्थिर | stable |
वर्णरेषा
277 पैकी 50 दाखवले आहेत. मूलभूत सेटिंगनुसार केवळ मोजलेली तीव्रता असलेल्या वर्णरेषा दाखवल्या जातात.
| तरंगलांबी (nm) | तीव्रता | आयनीकरण टप्पा | प्रकार | संक्रमण | अचूकता | स्रोत | |
|---|---|---|---|---|---|---|---|
| 383.46308 nm | 32000 | In II | emission | 5s.5d 1D → 5s.4f 1F* | मोजलेले | NIST | |
| 451.12972 nm | 18000 | In I | emission | 5s2.5p 2P* → 5s2.6s 2S | मोजलेले | NIST | |
| 410.17504 nm | 17000 | In I | emission | 5s2.5p 2P* → 5s2.6s 2S | मोजलेले | NIST | |
| 468.1115 nm | 16000 | In II | emission | 5s.5d 3D → 5s.4f 3F* | मोजलेले | NIST | |
| 590.33916 nm | 9000 | In II | emission | 5s.6p 3P* → 5s.6d 3D | मोजलेले | NIST | |
| 463.8162 nm | 8800 | In II | emission | 5s.5d 3D → 5s.4f 3F* | मोजलेले | NIST | |
| 465.562 nm | 7800 | In II | emission | 5s.5d 3D → 5s.4f 3F* | मोजलेले | NIST | |
| 464.4572 nm | 5900 | In II | emission | 5s.5d 3D → 5s.4f 1F* | मोजलेले | NIST | |
| 718.29048 nm | 5800 | In II | emission | 5s.6s 3S → 5s.6p 3P* | मोजलेले | NIST | |
| 384.2918 nm | 5600 | In II | emission | 5s.5d 1D → 5s.4f 3F* | मोजलेले | NIST | |
| 591.87693 nm | 5100 | In II | emission | 5s.6p 1P* → 5s.6d 1D | मोजलेले | NIST | |
| 616.254 nm | 4100 | In II | emission | 5s.4f 1F* → 5s<1/2,F=4>.6g | मोजलेले | NIST | |
| 689.15826 nm | 3900 | In II | emission | 5s.6s 3S → 5s.6p 3P* | मोजलेले | NIST | |
| 585.31709 nm | 3400 | In II | emission | 5s.6p 3P* → 5s.6d 3D | मोजलेले | NIST | |
| 609.59333 nm | 3300 | In II | emission | 5s.6p 3P* → 5s.6d 3D | मोजलेले | NIST | |
| 468.4791 nm | 2500 | In II | emission | 5s.5d 3D → 5s.4f 3F* | मोजलेले | NIST | |
| 727.66388 nm | 2400 | In II | emission | 5s.6s 3S → 5s.6p 3P* | मोजलेले | NIST | |
| 614.953 nm | 2200 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.6g | मोजलेले | NIST | |
| 613.986 nm | 2100 | In II | emission | 5s.4f 3F* → 5s<1/2,F=5>.6g | मोजलेले | NIST | |
| 614.32 nm | 2100 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.6g | मोजलेले | NIST | |
| 614.813 nm | 2100 | In II | emission | 5s.4f 3F* → 5s<1/2,F=5>.6g | मोजलेले | NIST | |
| 616.113 nm | 2000 | In II | emission | 5s.4f 1F* → 5s<1/2,F=5>.6g | मोजलेले | NIST | |
| 465.6736 nm | 1700 | In II | emission | 5s.5d 3D → 5s.4f 3F* | मोजलेले | NIST | |
| 551.3006 nm | 1500 | In II | emission | 5p2 3P → 5s.4f 1F* | मोजलेले | NIST | |
| 614.126 nm | 1500 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.6g | मोजलेले | NIST | |
| 405.69377 nm | 1300 | In II | emission | 5s.6p 3P* → 5s.8s 3S | मोजलेले | NIST | |
| 591.52626 nm | 1300 | In II | emission | 5s.6p 3P* → 5s.6d 3D | मोजलेले | NIST | |
| 557.6866 nm | 1200 | In II | emission | 5s.7p 1P* → 5s.10d 1D | मोजलेले | NIST | |
| 551.935 nm | 1100 | In II | emission | 5s.6d 3D → 5s.7f 3F* | मोजलेले | NIST | |
| 549.7486 nm | 1000 | In II | emission | 5s.6d 3D → 5s.7f 3F* | मोजलेले | NIST | |
| 550.7048 nm | 1000 | In II | emission | 5s.6d 3D → 5s.7f 3F* | मोजलेले | NIST | |
| 551.0883 nm | 1000 | In II | emission | 5s.7p 3P* → 5s.10d 3D | मोजलेले | NIST | |
| 512.0847 nm | 960 | In II | emission | 5s.4f 3F* → 5s<1/2,F=5>.7g | मोजलेले | NIST | |
| 390.20794 nm | 910 | In II | emission | 5s.6p 1P* → 5s.7d 1D | मोजलेले | NIST | |
| 384.2158 nm | 900 | In II | emission | 5s.5d 1D → 5s.4f 3F* | मोजलेले | NIST | |
| 512.1781 nm | 880 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.7g | मोजलेले | NIST | |
| 611.58707 nm | 830 | In II | emission | 5s.6p 3P* → 5s.6d 3D | मोजलेले | NIST | |
| 511.7388 nm | 810 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.7g | मोजलेले | NIST | |
| 511.5109 nm | 800 | In II | emission | 5s.4f 3F* → 5s<1/2,F=5>.7g | मोजलेले | NIST | |
| 512.9865 nm | 710 | In II | emission | 5s.4f 1F* → 5s<1/2,F=5>.7g | मोजलेले | NIST | |
| 463.7055 nm | 610 | In II | emission | 5s.5d 3D → 5s.4f 3F* | मोजलेले | NIST | |
| 511.6041 nm | 590 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.7g | मोजलेले | NIST | |
| 550.7779 nm | 570 | In II | emission | 5s.6d 3D → 5s.7f 3F* | मोजलेले | NIST | |
| 414.9635 nm | 550 | In II | emission | 5s.4f 1F* → 5s<1/2,F=5>.10g | मोजलेले | NIST | |
| 530.94926 nm | 550 | In II | emission | 5s.6p 3P* → 5s.6d 1D | मोजलेले | NIST | |
| 454.8998 nm | 540 | In II | emission | 5p2 1D → 5s.8p 3P* | मोजलेले | NIST | |
| 461.6069 nm | 540 | In II | emission | 5s.4f 3F* → 5s<1/2,F=4>.8g | मोजलेले | NIST | |
| 457.0881 nm | 520 | In II | emission | 5s.6d 3D → 5s.9f 3F* | मोजलेले | NIST | |
| 458.701 nm | 520 | In II | emission | 5s.6d 3D → 5s.9f 3F* | मोजलेले | NIST | |
| 457.1286 nm | 510 | In II | emission | 5s.6d 3D → 5s.9f 3F* | मोजलेले | NIST |
विस्तारित गुणधर्म
सहसंयुजी त्रिज्या (विस्तारित)
- सहसंयुजी त्रिज्या (प्युक्को)
- 142 pm
- सहसंयुजी त्रिज्या (प्युक्को, दुहेरी बंध)
- 136 pm
- सहसंयुजी त्रिज्या (प्युक्को, तिहेरी बंध)
- 146 pm
व्हॅन डर वाल्स त्रिज्या
- Bondi
- 193 pm
- Batsanov
- 220 pm
- Alvarez
- 243 pm
- UFF
- 446.3 pm
- MM3
- 264 pm
- Dreiding
- 459 pm
अणुत्रिज्या आणि धात्विक त्रिज्या
- अणुत्रिज्या (राह्म)
- 246 pm
- धात्विक त्रिज्या (C12)
- 158 pm
क्रमांकन मापनपट्ट्या
- Mendeleev
- 84
- Pettifor
- 79
- Glawe
- 80
विद्युतऋणता मापनपट्ट्या
- Ghosh
- 0
- Miedema
- 4
- Gunnarsson–Lundqvist
- 3
- Robles–Bartolotti
- 2
ध्रुवणक्षमता आणि अपस्करण
- द्विध्रुव ध्रुवणक्षमता
- 65 a.u.
- द्विध्रुव ध्रुवणक्षमता (अनिश्चितता)
- 4 a.u.
- C₆
- 779 Ha·Bohr6
- C₆ (Gould–Bučko)
- 643 Ha·Bohr6
मिडेमा प्राचल
- मिडेमा मोलर आयतन
- 15.75 cm3/mol
- मिडेमा इलेक्ट्रॉन घनता
- 2
पुरवठा जोखीम आणि अर्थकारण
- उत्पादनाचे केंद्रीकरण
- 53
- सापेक्ष पुरवठा जोखीम
- 8
- राजकीय स्थैर्य (प्रमुख उत्पादक)
- 24
अवस्थांतरे आणि अपरूपे
| द्रवणांक | 429.75 K |
| उत्कलनांक | 2300.15 K |
| त्रिक बिंदू (तापमान) | 429.74 K |
ऑक्सिडीकरण अवस्थांचे वर्ग
प्रगत संदर्भ माहिती
परिरक्षण स्थिरांक (11)
| n | कक्षिका | σ |
|---|---|---|
| 1 | s | 0.9903 |
| 2 | p | 4.102 |
| 2 | s | 12.8764 |
| 3 | d | 14.3218 |
| 3 | p | 17.4793 |
| 3 | s | 17.3692 |
| 4 | d | 32.0584 |
| 4 | p | 28.6312 |
| 4 | s | 27.2388 |
| 5 | p | 40.53 |
स्फटिक त्रिज्यांचा तपशील (3)
| विद्युतभार | CN | प्रचक्रण | rcrystal (pm) | उत्पत्ती |
|---|---|---|---|---|
| 3 | IV | 76 | ||
| 3 | VI | 94 | from r^3 vs V plots, | |
| 3 | VIII | 106 | from r^3 vs V plots, calculated, |
समस्थानिक क्षय प्रकार (69)
| समस्थानिक | मोड | तीव्रता |
|---|---|---|
| 96 | B+ | — |
| 96 | p | — |
| 97 | B+ | 100% |
| 97 | B+p | 2.3% |
| 97 | p | — |
| 98 | B+ | 100% |
| 98 | B+p | 0.1% |
| 99 | B+ | 100% |
| 99 | B+p | 0.3% |
| 100 | B+ | 100% |
क्ष-किरण प्रकीर्णन गुणक (510)
| ऊर्जा (eV) | f₁ | f₂ |
|---|---|---|
| 10 | — | 2.16244 |
| 10.1617 | — | 2.07002 |
| 10.3261 | — | 1.98155 |
| 10.4931 | — | 1.89686 |
| 10.6628 | — | 1.81579 |
| 10.8353 | — | 1.72844 |
| 11.0106 | — | 1.54985 |
| 11.1886 | — | 1.35731 |
| 11.3696 | — | 0.99325 |
| 11.5535 | — | 0.74202 |
अतिरिक्त माहिती
Estimated Crustal Abundance
The estimated element abundance in the earth's crust.
2.5×10-1 milligrams per kilogram
संदर्भ (1)
Estimated Oceanic Abundance
The estimated element abundance in the earth's oceans.
2×10-2 milligrams per liter
संदर्भ (1)
Sources
Sources of this element.
Indium is most frequently associated with zinc materials, and it is from these that most commercial indium is now obtained; however, it is also found in iron, lead, and copper ores.
संदर्भ (1)
- [6] Indium https://periodic.lanl.gov/49.shtml
संदर्भ
(9)
Data deposited in or computed by PubChem
The half-life and atomic mass data was provided by the Atomic Mass Data Center at the International Atomic Energy Agency.
Element data are cited from the Atomic weights of the elements (an IUPAC Technical Report). The IUPAC periodic table of elements can be found at https://iupac.org/what-we-do/periodic-table-of-elements/. Additional information can be found within IUPAC publication doi:10.1515/pac-2015-0703 Copyright © 2020 International Union of Pure and Applied Chemistry.
The information are cited from Pure Appl. Chem. 2018; 90(12): 1833-2092, https://doi.org/10.1515/pac-2015-0703.
Thomas Jefferson National Accelerator Facility (Jefferson Lab) is one of 17 national laboratories funded by the U.S. Department of Energy. The lab's primary mission is to conduct basic research of the atom's nucleus using the lab's unique particle accelerator, known as the Continuous Electron Beam Accelerator Facility (CEBAF). For more information visit https://www.jlab.org/
The periodic table at the LANL (Los Alamos National Laboratory) contains basic element information together with the history, source, properties, use, handling and more. The provenance data may be found from the link under the source name.
The periodic table contains NIST's critically-evaluated data on atomic properties of the elements. The provenance data that include data for atomic spectroscopy, X-ray and gamma ray, radiation dosimetry, nuclear physics, and condensed matter physics may be found from the link under the source name. Ref: https://www.nist.gov/pml/atomic-spectra-database
This section provides all form of data related to element Indium.
The element property data was retrieved from publications.